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Patent # Description
US-9,450,020 Multiple-bits-per-cell voltage-controlled magnetic memory
Voltage controlled magneto-electric tunnel junctions and memory devices are described which provide efficient high speed voltage switching of non-volatile...
US-9,450,019 Power semiconductor device, manufacturing method therefor, and method for operating the power semiconductor device
A power semiconductor device includes a semiconductor body including a first surface, an edge delimiting the semiconductor body in a horizontal direction...
US-9,450,018 Light-emitting device and light-emitting device package
There are provided a light-emitting device and a light-emitting device package capable of simultaneously controlling brightness and correlated color temperature...
US-9,450,017 Semiconductor light emitting device and method of fabricating the same
A semiconductor light emitting device comprises a first electrode contacting layer, a first active layer on the first electrode contacting layer, a second...
US-9,450,016 Flat panel detector and manufacturing method thereof, camera device
A flat panel detector comprises a photoelectric conversion layer and a pixel detecting element disposed under the photoelectric conversion layer. The pixel...
US-9,450,015 Manufacturing method of semiconductor structure
A manufacturing method of a semiconductor structure includes the following steps. A patterned photoresist layer is formed on a wafer of the wafer structure. The...
US-9,450,014 Backside illumination image sensor chips and methods for forming the same
A die includes a first plurality of edges, and a semiconductor substrate in the die. The semiconductor substrate includes a first portion including a second...
US-9,450,013 Low noise CdHgTe photodiode array
A planar photodiode array including a useful layer made of Cd.sub.xHg.sub.1-xTe. The useful layer includes at least two superimposed doped layers, each...
US-9,450,012 Solid-state imaging device and manufacturing method therefor
A solid-state imaging device includes a first and second pixel regions. In the first pixel region, a photoelectric conversion unit, a floating diffusion region...
US-9,450,011 Solid-state image sensor and imaging system
At least one exemplary embodiment is directed to a solid state image sensor including at least one antireflective layer and/or non rectangular shaped wiring...
US-9,450,010 Light receiving elements for photoelectric conversion and capacitor elements for charge storing in joined...
Provided are a semiconductor device in which a solid-state image sensing element having a backside-illuminated structure and capacitor elements storing therein...
US-9,450,009 Solid-state imaging device and camera system
There is provided a solid-state imaging device including a wafer in which a guard ring with conductivity in an insulation film layered on a first conductivity...
US-9,450,008 Solid-state imaging apparatus, method of manufacturing the same, and electronic apparatus
A solid-state imaging apparatus includes a plurality of phase difference detection pixels configured adjacent to one another; and an isolation structure...
US-9,450,007 Integrated circuit with reflective material in trenches and related methods
An IC may include a substrate and a layer, and an array of GMAPDs in the layer. The layer may have trenches extending between adjacent GMAPDs. The IC may...
US-9,450,006 Image pickup element, image pickup apparatus, and image pickup system
An image pickup element includes a first pixel, a second pixel, and a third pixel that share one microlens, a first boundary that is provided between the first...
US-9,450,005 Image pickup device and image pickup apparatus
An image pickup device according to the present disclosure includes a first pixel and a second pixel each including a photodetection section and a light...
US-9,450,004 Wafer-level encapsulated semiconductor device, and method for fabricating same
An encapsulated semiconductor device includes a device die with a semiconductor device fabricated thereon. A carrier layer opposite the device die covers the...
US-9,450,003 Solid-state imaging device, method of manufacturing solid-state imaging device and electronic apparatus
A solid-state imaging device including a photoelectric conversion element operable to generate electric charge according to the amount of incident light and to...
US-9,450,002 Detecting apparatus and detecting system
A detecting apparatus formed on a substrate, includes a plurality of pixels arranged in a matrix, and a signal line electrically connected to the pixels. Each...
US-9,450,001 Method and system for detecting light and designing a light detector
A light detection system which comprises an active region between a back contact layer and a front contact layer is disclosed. The active region comprises a...
US-9,450,000 Photodiode of high quantum efficiency
A photodiode includes at least one central pad arranged on a light-receiving surface of a photodiode semiconductor substrate. The pad is made of a first...
US-9,449,999 Semiconductor device and IC card
The present invention provides an ID chip or an IC card in which the mechanical strength of an integrated circuit can be enhanced without suppressing a circuit...
US-9,449,998 Manufacturing method of pixel structure with data line, scan line and gate electrode formed on the same layer
A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer,...
US-9,449,997 Electro-optical device, electronic apparatus, and method for manufacturing electro-optical device
An electro-optical device includes an element substrate main body, a first capacitance electrode that is arranged above the element substrate main body, and has...
US-9,449,996 Semiconductor device
To provide a semiconductor device including a capacitor whose charge capacity is increased without reducing the aperture ratio. The semiconductor device...
US-9,449,995 Array substrate and manufacturing method thereof, display device
An array substrate and manufacturing method thereof and a display device are provided. The array substrate comprises a substrate (10) and a plurality of...
US-9,449,994 Display backplane having multiple types of thin-film-transistors
There is provided a TFT backplane having at least one TFT with oxide active layer and at least one TFT with poly-silicon active layer. In the embodiments of the...
US-9,449,993 Display apparatus
A display apparatus includes a substrate having a display area defined in a non rectangular shape, and a non-display area surrounding the display area; an image...
US-9,449,992 Display apparatus having touch sensing part and method of manufacturing the same
A display apparatus includes a first base substrate, a touch sensing part provided on the first base substrate, an electronic device provided on the first base...
US-9,449,991 Semiconductor device having circular light-blocking layer
An object is to provide a semiconductor device including an oxide semiconductor, which has stable electrical characteristics and improved reliability. In a...
US-9,449,990 Thin film transistor and display device
Provided is a thin film transistor which is provided with an oxide semiconductor thin film layer and has a threshold voltage that does not change much due to...
US-9,449,989 Thin film transistor substrate
A thin film transistor substrate is disclosed, which comprises: a substrate; and plural thin film transistor units disposed on the substrate and respectively...
US-9,449,988 Semiconductor device with six transistors forming a nor circuit
A semiconductor device has a small area and constitutes a CMOS 3-input NOR circuit by using surrounding gate transistors (SGTs) which are vertical transistors....
US-9,449,987 Three dimensional memory device with epitaxial semiconductor pedestal for peripheral transistors
A method of fabricating a memory device is provided. The method includes forming a first alternating stack of insulator layers and spacer material layers over a...
US-9,449,986 3-dimensional memory device having peripheral circuit devices having source/drain contacts with different spacings
A memory device includes a cell region including a channel region extending to be perpendicular to an upper surface of a substrate, a plurality of gate...
US-9,449,985 Memory cell with high-k charge trapping layer
A non-volatile storage device with memory cells having a high-k charge storage region, as well as methods of fabrication, is disclosed. The charge storage...
US-9,449,984 Vertical NAND device with low capacitance and silicided word lines
A three dimensional memory device including a substrate and a semiconductor channel. At least one end portion of the semiconductor channel extends substantially...
US-9,449,983 Three dimensional NAND device with channel located on three sides of lower select gate and method of making thereof
A select gate transistor for a NAND device includes a select gate electrode having a first side, a second side, and top and a bottom, a semiconductor channel...
US-9,449,982 Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of...
A method of making a vertical NAND device includes forming a lower portion of a memory stack over a substrate, forming a lower portion of memory openings in the...
US-9,449,981 Three dimensional NAND string memory devices and methods of fabrication thereof
A method includes forming an amorphous or polycrystalline semiconductor material over at least a portion of a sidewall of a front side opening and within front...
US-9,449,980 Band gap tailoring for a tunneling dielectric for a three-dimensional memory structure
The band gap structure of a tunneling dielectric can be tailored to facilitate programming and erasing of stored information, while enhancing charge storage...
US-9,449,979 Ferroelectric memory device and fabrication process thereof, and methods for operation thereof
A new form of a solid-state non-volatile memory cell is presented. The solid-state memory cell comprises a series of different layers of ferroelectric...
US-9,449,978 Semiconductor devices including a recessed access device and methods of forming same
A semiconductor device comprises a recessed access device that includes a first pillar, a second pillar, a channel region connecting the first and second...
US-9,449,977 Semiconductor devices and methods for fabricating the same
A semiconductor device includes a substrate and a plurality of storage nodes on the substrate and extending in a vertical direction relative to the substrate. A...
US-9,449,976 Semiconductor device structure and method for manufacturing the same
A novel semiconductor device structure includes a first-conductivity-type semiconductor substrate, an isolated region, a first-conductivity-type MOS region, and...
US-9,449,975 FinFET devices and methods of forming
In accordance with some embodiments, a device includes first and second p-type transistors. The first transistor includes a first channel region including a...
US-9,449,974 Semiconductor device and method of manufacturing the same
A semiconductor device including, in cross section, a semiconductor substrate; a gate insulating film on the semiconductor substrate; a gate electrode on the...
US-9,449,973 Semiconductor device
A semiconductor device includes a substrate; a first inverter disposed on the substrate and receiving a voltage from any one of a bit line and a complementary...
US-9,449,972 Ferroelectric FinFET
The present disclosure provides, in a first aspect, a semiconductor device, including a semiconductor substrate and a gate structure formed over the...
US-9,449,971 Methods of forming FinFETs
An embodiment is a method including forming a first fin on a substrate, the first fin having a first longitudinal axis, forming a first trench having a first...
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