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High efficiency light emitting diode and method for fabricating the same
A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an...
Light emitting device
A light emitting device includes a metal layer, a light emitting structure, an electrode disposed on a first upper portion of a second conductive type...
Substrate for nitride semiconductor device and production method thereof,
and red light emitting semiconductor...
A production method of a substrate for nitride semiconductor device comprising a mask formation step of using a metal nitride as a base material and forming a...
Light emitting device package including a substrate having at least two
A light emitting device package includes a substrate having a first cavity and a second cavity directly under the first cavity, a light emitting part on the...
Integrated multi-color light emitting device made with hybrid crystal
An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments...
Light emitting element, method of manufacturing the same, and light
A light emitting element includes: a laminated body including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor...
Method and apparatus for optical modulation
The present invention is a method and an apparatus for optical modulation, for example for use in optical communications links. In one embodiment, an apparatus...
Light emitting device
Disclosed is a light emitting device including a substrate, a first conductive semiconductor layer disposed on the substrate, an active layer disposed on the...
Method for coating a solar panel
The present invention relates to a method for coating a solar panel to reduce the amount of light being received by the solar panel's photovoltaic cells and...
Infra red detectors and methods of manufacturing infra red detectors using
A method of forming infra red detector arrays is described, starting with the manufacture of a wafer. The wafer is formed from a GaAs or GaAs/Si substrate...
Method of forming an interdigitated back contact solar cell
A method of forming an interdigitated back contact solar cell is described. The method uses a deposition process to create a doped glass layer on the substrate,...
Disassembling photovoltaic module
Provided is a method of disassembling a photovoltaic module. The method includes: applying heat to the photovoltaic module in an oxidizing atmosphere; removing...
Sol-gel process for the manufacture of high power switches
According to one embodiment, a photoconductive semiconductor switch includes a structure of nanopowder of a high band gap material, where the nanopowder is...
Optoelectronic switch having a photovoltaic response and associated method
A light-induced diode-like response in multi-layered MoSe.sub.2 field-effect transistors resulting from a difference in the size of the Schottky barriers...
Tunnel homojunctions in group IV / group II-VI multijunction solar cells
A photovoltaic cell comprises a first subcell formed of a Group IV semiconductor material, a second subcell formed of a Group II-VI semiconductor material, and...
PN structure formed by improved doping methods to simplify manufacturing
process of diodes for solar cells
A method for doping a semiconductor substrate is disclosed wherein a layer of a first conductivity type is first formed followed by forming a blocking layer...
Laser irradiation aluminum doping for monocrystalline silicon substrates
Methods for laser irradiation aluminum doping for monocrystalline silicon substrates are provided. According to one aspect of the disclosed subject matter,...
Segmented thin film solar cells
Use of chemical mechanical polishing (CMP) and/or pure mechanical polishing to separate sub-cells in a thin film solar cell. In one embodiment the CMP is only...
Method of fabricating a metal wrap through solar cell
Methods of fabricating metal wrap through solar cells and modules for thin silicon solar cells, including epitaxial silicon solar cells, are described. These...
Solar battery cell, solar battery module and method of making solar
A solar battery cell and related methodology are provided which enable a TAB wire to be accurately connected to an intended position, thus allowing a possible...
Image pickup module and image pickup unit
An image pickup module includes: a wiring board including a first main surface on which chip electrodes are disposed and a second main surface on which the...
Embodiments include apparatuses and methods related to a compound varactor. A first varactor in the compound varactor may include a collector layer and a first...
High power silicon carbide (SiC) PiN diodes having low forward voltage
Silicon Carbide (SiC) PiN Diodes are provided having a reverse blocking voltage (V.sub.R) from about 3.0 kV to about 10.0 kV and a forward voltage (V.sub.F) of...
An n.sup.--type semiconductor substrate (1) includes an active region and a terminal region disposed outside the active region. A p.sup.+-type anode layer (2)...
Micromachined 3-axis accelerometer with a single proof-mass
This document discusses, among other things, an inertial measurement system including a device layer including a single proof-mass 3-axis accelerometer, a cap...
Substrate with multiple encapsulated devices
A device with multiple encapsulated functional layers, includes a substrate, a first functional layer positioned above a top surface of the substrate, the...
HTO offset for long leffective, better device performance
Memory devices having an increased effective channel length and/or improved TPD characteristics, and methods of making the memory devices are provided. The...
Oxide semiconductor field effect transistor device and method for
manufacturing the same
An oxide semiconductor field effect transistor (OS FET) device includes a first dielectric layer formed on a substrate, an oxide semiconductor (OS) island...
Transistor device structure that includes polycrystalline semiconductor
thin film that has large grain size
A transistor device structure includes a substrate, a first polycrystalline semiconductor thin film and a first transistor unit. The first polycrystalline...
Oxide semiconductor thin film transistor with reduced impurity diffusion
A transistor having high field-effect mobility is provided. A transistor having stable electrical characteristics is provided. A transistor having small current...
FinFET for device characterization
A method and system is disclosed for providing access to the body of a FinFET device. In one embodiment, a FinFET device for characterization comprises an...
Mandrel removal last in lateral semiconductor growth and structure for
A method of forming a semiconductor structure is disclosed comprising removing mandrel elements, the side walls of which support semiconductor fin structures,...
Channel strain inducing architecture and doping technique at replacement
poly gate (RPG) stage
The demand for increased performance and shrinking geometry from ICs has brought the introduction of multi-gate devices including finFET devices. Inducing a...
Method and apparatus for power device with depletion structure
A semiconductor device is provided. The semiconductor device includes a substrate of a first conductivity type and an epitaxial structure of the first...
Integrated circuit metal gate structure having tapered profile
A device having a gate where the profile of the gate provides a first width at a top region and a second width at a bottom region is described. The gate may...
Hybrid phase field effect transistor
An insulating layer is deposited over a transistor structure. The transistor structure comprises a gate electrode over a device layer on a substrate. The...
Electric field management for a group III-nitride semiconductor device
A semiconductor device includes a substrate, a first active layer, a second active layer, at least first and second electrodes, an E-field management layer, and...
Transistor having a back-barrier layer and method of making the same
A transistor includes a substrate and a buffer layer on the substrate, wherein the buffer layer comprises p-type dopants. The transistor further includes a...
Power semiconductor device and corresponding module
Power semiconductor device having a wafer, including emitter and collector electrodes arranged on opposite sides, wherein a gate electrode arranged on the...
High voltage device and method for manufacturing the same
A high voltage (HV) device and method for manufacturing the same are provided, at least comprising a substrate, an insulation formed on the substrate, a deep...
Methods for fabricating PNP bipolar junction transistors
Integrated circuits with bipolar transistors are provided. In one embodiment, a bipolar transistor may include an emitter region, a first base region that...
Method for manufacturing semiconductor device
To provide a semiconductor device which occupies a small area and is highly integrated. A first conductive layer is formed; a first insulating layer is formed...
SiGe and Si FinFET structures and methods for making the same
FinFET structures and methods for making the same. A method includes: creating a plurality of Silicon fins on a first region of a substrate, creating a...
Techniques for ion implantation of non-planar field effect transistors
A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor...
Method of forming a Fin structure of semiconductor device
A method of forming a fin structure of a semiconductor device, such as a fin field effect transistor FinFET is provided. In an embodiment, trenches are formed...
Thin film transistor array panel
A thin film transistor array panel includes a substrate, a light blocking film disposed on the substrate, a buffer layer covering the light blocking film, and a...
LDMOS transistor and method of forming the LDMOS transistor with improved
The Rds*Cgd figure of merit (FOM) of a laterally diffused metal oxide semiconductor (LDMOS) transistor is improved by forming the drain drift region with a...
Method and structure of forming controllable unmerged epitaxial material
A method of forming a semiconductor device that includes forming a plurality of semiconductor pillars. A dielectric spacer is formed between at least one set of...
Recessing RMG metal gate stack for forming self-aligned contact
Embodiments of the present invention may include methods of incorporating an embedded etch barrier layer into the replacement metal gate layer of field effect...
Junctionless semiconductor device having buried gate, apparatus including
the same, and method for...
A junctionless semiconductor device having a buried gate, a module and system each having the same, and a method for forming the semiconductor device are...