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Patent # Description
US-9,455,328 Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistor
A low-temperature oxide method is used for manufacturing backside field stop layer of IGBT and first fabricates front elements and front metal layer on a first...
US-9,455,327 Schottky gated transistor with interfacial layer
A Schottky gated transistor having reduced gate leakage current is disclosed. The Schottky gated transistor includes a substrate and a plurality of epitaxial...
US-9,455,326 Wide bandgap semiconductor device
A wide bandgap semiconductor device includes a first conductive type high-concentration wide bandgap semiconductor substrate, a first conductive type...
US-9,455,325 Fin field-effect transistors having controlled fin height
An apparatus includes a semiconductor substrate having a plurality of fins, wherein the plurality of fins includes a first group of fins and a second group of...
US-9,455,324 Thin film transistor and method of fabricating the same, array substrate and method of fabricating the same,...
The present invention provides a thin film transistor and a method of fabricating the thin film transistor, an array substrate and a method of fabricating the...
US-9,455,323 Under-spacer doping in fin-based semiconductor devices
A fin field effect transistor (FinFET) device and a method of fabricating the FinFET are described. The device includes a fin formed on a substrate, the fin...
US-9,455,322 Flash cell and forming process thereof
A flash cell forming process includes the following steps. A first gate is formed on a substrate. A first spacer is formed at a side of the first gate, where...
US-9,455,321 Method for fabricating semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the...
US-9,455,320 FinFETs with strained well regions
A device includes a substrate and insulation regions over a portion of the substrate. A first semiconductor region is between the insulation regions and having...
US-9,455,319 Semiconductor device
A semiconductor device and an operating method of the same are disclosed. The semiconductor device includes a substrate, a source region, a drain region, a gate...
US-9,455,318 Semiconductor device and manufacturing method thereof
A method of manufacturing a semiconductor device is provided. The method includes providing a substrate; forming a well region on the substrate; forming at...
US-9,455,317 Nanowire semiconductor device including lateral-etch barrier region
A semiconductor device includes a semiconductor-on-insulator wafer having a buried oxide layer. The buried oxide layer includes therein opposing etch barrier...
US-9,455,316 Three-dimensional electrostatic discharge semiconductor device
Three-dimensional electrostatic discharge (ESD) semiconductor devices are fabricated together with three-dimensional non-ESD semiconductor devices. For example,...
US-9,455,315 High-voltage nitride device and manufacturing method thereof
A high-voltage nitride device which can avoid vertical breakdown and has a high breakdown voltage includes: a silicon substrate; a nitride epitaxial layer,...
US-9,455,314 Y-FET with self-aligned punch-through-stop (PTS) doping
A semiconductor structure is provided that includes at least one punch-through stop base structure having concave outermost sidewalls and located on a...
US-9,455,313 High-density integrated circuit via capacitor
A capacitor can be fabricated within an integrated circuit (IC) by creating, in a top surface of a dielectric layer of the IC, a recess having at least one side...
US-9,455,312 Multiple depth vias in an integrated circuit
An integrated circuit with vias with different depths stopping on etch stop layers with different thicknesses. A method of simultaneously etching vias with...
US-9,455,311 Display device and driving method thereof
To provide a display device and a driving method thereof, where variations in the threshold voltage of transistors can be compensated and thus variations in...
US-9,455,310 Organic light emitting display device
An organic light emitting display device includes a first substrate, a plurality of common lines, an optical member, and a second substrate. The first substrate...
US-9,455,309 Organic light emitting display device
Discussed is an organic light emitting display device that may include a first pixel on a substrate; a switching transistor with a first active layer provided...
US-9,455,308 Display device and method for manufacturing display device
Provided is a display device, including: a substrate; signal lines including a gate line, a data line, and a driving voltage line that collectively define an...
US-9,455,307 Active matrix electro-optical device and method of making thereof
There is provided a method of forming an active matrix electro-optical device, the method comprising providing a backplane comprising: a backplane substrate; a...
US-9,455,306 Foldable display apparatus and method of manufacturing the same
A foldable display apparatus, a method of manufacturing the same, and a controlling method of the same are disclosed. The foldable display apparatus includes a...
US-9,455,305 Organic light-emitting display device and method of manufacturing the same
An organic light-emitting display device includes a substrate, a plurality of pixel electrodes arranged in a matrix on the substrate, and an organic common...
US-9,455,304 Organic light-emitting diode display with white and blue diodes
An organic light-emitting diode display may have an array of pixels with sets of pixels arranged in rows and columns. Each set of pixels includes a red pixel, a...
US-9,455,303 White organic light emitting device
A white organic light emitting device is disclosed. The device includes a first light emitting unit, which has first, second, and third light emitting element....
US-9,455,302 Image sensor and electronic device including the same
Example embodiments relate to an image sensor that includes a semiconductor substrate integrated with at least one photo-sensing device, an impurity-doped first...
US-9,455,301 Setting channel voltages of adjustable resistance bit line structures using dummy word lines
Methods for reducing leakage currents through unselected memory cells of a memory array during a memory operation. In some cases, the leakage currents through...
US-9,455,300 Pixel array of ultraviolet light emitting devices
Embodiments of the invention include a first semiconductor layer grown over a growth substrate and a plurality of pixels grown on the first semiconductor layer,...
US-9,455,299 Methods for semiconductor sensor structures with reduced dislocation defect densities
Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing...
US-9,455,298 Wafer-level packaging method of BSI image sensors having different cutting processes
A wafer-level packaging method of BSI image sensors includes the following steps: S1: providing a wafer package body comprising a silicon base, an interconnect...
US-9,455,297 Preparation process of image sensors
The invention relates to the field of semiconductor, more particularly, to a preparation process of image sensors, comprising: Step S1, providing a...
US-9,455,296 Solid-state imaging device, production method of the same, and imaging apparatus
A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception...
US-9,455,295 Solid-state image sensor with MOS capacitor storage section to which a negative bias is applied after a reset...
There is provided a solid-state image sensor including a plurality of unit pixels arranged thereon, the plurality of unit pixels each including a light...
US-9,455,294 Image sensor and method of fabricating the same
An image sensor includes a substrate having a front side and a back side, an insulating structure containing circuits on the front side of the substrate,...
US-9,455,293 X-Y address type solid state image pickup device and method of producing the same
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which...
US-9,455,292 Image sensing device with interconnect layer gap
An image sensing device may include an interconnect layer, an image sensor IC coupled to the interconnect layer and having an image sensing surface, and an IR...
US-9,455,291 Blue enhanced image sensor
A back side illuminated image sensor includes a semiconductor material having a front side and a back side. The semiconductor material is disposed between image...
US-9,455,290 Image sensor including a photonic crystal, an operating method thereof, and a data processing system including...
An image sensor including: a plurality of pixels, wherein a first pixel of the pixels includes: a first photoelectric conversion element; and a first microlens...
US-9,455,289 Solid-state image sensor and camera
A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter...
US-9,455,288 Image sensor structure to reduce cross-talk and improve quantum efficiency
A semiconductor device includes a substrate including a pixel region incorporating a photodiode, a grid disposed over the substrate and having walls defining a...
US-9,455,287 Imaging device, monitoring device, and electronic appliance
A highly accurate imaging device or a highly accurate imaging device capable of detecting differences is provided. A configuration including a circuit in which...
US-9,455,286 Solid image-pickup device with through hole passing through substrate
A solid image-pickup device has a semiconductor substrate, which includes an image-pickup area having a plurality of light sensors arranged thereon. A...
US-9,455,285 Image sensors with phase detection pixels
An image sensor may include an image pixel array with both image pixels to gather image data and phase detection pixels to gather phase information. The phase...
US-9,455,284 Stack type image sensor
A stack type image sensor may include: a first chip including a via isolation trench penetrating a first substrate, a via isolation layer including an...
US-9,455,283 Etch chemistries for metallization in electronic devices
In various embodiments, etchants featuring (i) mixtures of hydrochloric acid, methanesulfonic acid, and nitric acid, or (ii) mixtures of phosphoric acid,...
US-9,455,282 Manufacturing method of an array substrate
Provided is a manufacturing method of an array substrate with an etching stop layer. The method includes: forming a pattern including a gate, a gate line and a...
US-9,455,281 Touch sensor, touch panel, touch panel module, and display device
Objects are to simplify a process for manufacturing a touch panel, reduce manufacturing costs of a touch panel, provide a thin touch panel, increase the...
US-9,455,280 Semiconductor device
A semiconductor device including a capacitor whose charge capacity is increased while improving the aperture ratio is provided. Further, a semiconductor device...
US-9,455,279 Thin film transistor substrate and display using the same
Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate,...
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