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Patent # Description
US-9,455,178 Method of semiconductor integrated circuit fabrication
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A conductive feature over a substrate is provided. A first dielectric layer is...
US-9,455,177 Contact hole formation methods
Methods of forming contact holes comprising: (a) providing a substrate comprising a plurality of post patterns over a layer to be patterned; (b) forming a...
US-9,455,176 Manufacturing method for forming semiconductor structure with sub-fin structures
The present invention provides a semiconductor structure including a substrate, at least one fin group and a plurality of sub-fin structures disposed on the...
US-9,455,175 Conveying apparatus
A conveying apparatus includes a holding plate having a holding surface destined to face a surface of a wafer to be held; a restriction member on one end side...
US-9,455,174 Device and method for individual support of components
A system is provided for individually supporting at least one component having opposing front and back faces, including a supporting device having a plurality...
US-9,455,173 Semiconductor piece manufacturing method
A semiconductor piece manufacturing method includes: a process of forming a fine groove on a front surface side including a first groove portion having a width...
US-9,455,172 Electrostatic clamp
An electrostatic clamp configured to, in use, hold an article, such as a reticle or a wafer in a lithographic apparatus. The clamp includes a lower portion; an...
US-9,455,171 End effector
An end effector includes: a hand; a substrate holder provided on the hand; a mapping detector provided at distal end portions and of the hand; a light emitter,...
US-9,455,170 Deposition apparatus, organic light emitting display apparatus, and method of manufacturing organic light...
A deposition apparatus includes a deposition unit including a plurality of deposition assemblies, which are separated from a substrate at a predetermined...
US-9,455,169 Ultra-low oxygen and humility loadport and stocker system
One or more pods for adjusting at least one of an oxygen content or a water content therein and methods of their use are provided, where one or more...
US-9,455,168 Buffer material for packing wafer carrier
At the time of packing a wafer carrier into a container, an upper buffer body and a lower buffer body are arranged above and below the wafer carrier. The wafer...
US-9,455,167 Accommodation cassette
An accommodation cassette including: a plurality of rear accommodating grooves that are formed at least in the laterally central area of the inner surface of a...
US-9,455,166 Substrate transporting apparatus, substrate delivery position confirming method, and substrate processing system
A loader module of a substrate processing system includes a transportation arm configured to move towards a wafer accommodated in a carrier and receive the...
US-9,455,165 Die bonding device
A die bonding device includes: a wafer holder supporting a wafer where a die is formed; an ejector holder disposed at the wafer holder below the wafer and...
US-9,455,164 Laser annealing apparatus and laser annealing method
A laser annealing apparatus includes: a laser beam generator for providing a stable single-pulse laser; a cyclic delay unit (300) for splitting the single-pulse...
US-9,455,163 Brush mandrel for PVA sponge brush
A cleaning device for cleaning substrates is provided. The cleaning device includes a generally cylindrically-shaped brush mandrel and a cylindrical brush. The...
US-9,455,162 Low cost interposer and method of fabrication
A method for making an interposer is provided. A conductive layer is formed by contacting a replicate such that a shape of a surface of the conductive layer...
US-9,455,161 Semiconductor device and methods of manufacturing semiconductor devices
This application relates to a semiconductor device comprising a semiconductor chip, a molded body covering the semiconductor chip, wherein the molded body...
US-9,455,160 Method for fabricating a semiconductor chip panel
The method comprises providing a carrier, providing a plurality of semiconductor chips, the semiconductor chips each comprising a first main face and a second...
US-9,455,159 Fabrication method of packaging substrate
A method for fabricating a packaging substrate includes: providing a carrier having a first metal layer and a second metal layer formed on the first metal...
US-9,455,158 3DIC interconnect devices and methods of forming same
A stacked semiconductor device and a method of forming the stacked semiconductor device are provided. A plurality of integrated circuits are bonded to one...
US-9,455,157 Method and apparatus for mitigating parasitic coupling in a packaged integrated circuit
A packaged IC has a package with a die paddle, a signal lead, and a ground lead. The packaged IC also has a die, secured to the package, with a ground pad and a...
US-9,455,156 Method of making a semiconductor device using multiple layer sets
A method of making a semiconductor device includes forming an intermediate semiconductor device. The intermediate device includes a substrate; and a dielectric...
US-9,455,155 Semiconductor structure and manufacturing method for the same
A semiconductor structure and a manufacturing method of the same are disclosed. The semiconductor structure includes a conductive layer, a conductive strip, a...
US-9,455,154 Methods for fabricating guide patterns and methods for fabricating integrated circuits using such guide patterns
Methods for fabricating guide patterns and methods for fabricating integrated circuits using guide patterns are provided. In an embodiment, a method for...
US-9,455,153 Plasma processing method
There is provided a plasma processing method capable of carrying out a stable plasma process by way of improving plasma stabilization and also capable of...
US-9,455,152 Hydrogenation method and hydrogenation apparatus
A hydrogenation method according to the present invention includes preparing a plasma generation section (20), preparing a hermetic member (30), disposing an...
US-9,455,151 Integrated capacitor and method for producing the same
An integrated capacitor includes a substrate with a first main surface area and an opposing second main surface area. A capacitor structure with a dielectric...
US-9,455,150 Conformal thin film deposition of electropositive metal alloy films
The present disclosure relates to a method of forming a semiconductor. The method includes heating a substrate in a reaction chamber, supplying to the reaction...
US-9,455,149 Plate-like object processing method
A plate-like object processing method for processing a plate-like object including a substrate and a laminate formed on a front surface of the substrate,...
US-9,455,148 Method for manufacturing semiconductor device
An insulating film (2) is formed on a main surface of a semiconductor substrate (1) that includes an active region and a termination region. The insulating film...
US-9,455,147 Boron ion implantation using alternative fluorinated boron precursors, and formation of large boron hydrides...
Methods of implanting boron-containing ions using fluorinated boron-containing dopant species that are more readily cleaved than boron trifluoride. A method of...
US-9,455,146 Virtual substrates for epitaxial growth and methods of making the same
A virtual substrate includes a handle support and a strain-relieved single crystalline layer on the handle support. A method of making the virtual substrate...
US-9,455,145 Crystallization processing for semiconductor applications
A method and apparatus for forming a crystalline semiconductor layer on a substrate are provided. A semiconductor layer is formed by vapor deposition. A pulsed...
US-9,455,144 Method for growing nitride-based semiconductor with high quality
Disclosed is a method for growing a nitride-based semiconductor with high quality, the method including: forming a first mask layer on a substrate and forming a...
US-9,455,143 Atomic layer epitaxy for semiconductor gate stack layer for advanced channel devices
Embodiments of the present disclosure provide methods and apparatus for forming an epitaxial layer on a substrate. The substrate is exposed to pulsed laser...
US-9,455,142 Molecular precursor compounds for ABIGZO zinc-group 13 mixed oxide materials
Molecular precursor compounds, processes and compositions for making Zn-Group 13 mixed oxide materials including ABIGZO, AIGZO and BAIZO, by providing inks...
US-9,455,141 Silicon-germanium fin of height above critical thickness
Embodiments of the invention include a method for fabricating a SiGe fin and the resulting structure. A SOI substrate is provided, including at least a silicon...
US-9,455,140 Methods of forming doped epitaxial SiGe material on semiconductor devices
One illustrative method disclosed herein includes, among other things, performing first and second in situ doping, epitaxial deposition processes to form first...
US-9,455,139 Methods and apparatus for wetting pretreatment for through resist metal plating
Disclosed are pre-wetting apparatus designs and methods. In some embodiments, a pre-wetting apparatus includes a degasser, a process chamber, and a controller....
US-9,455,138 Method for forming dielectric film in trenches by PEALD using H-containing gas
A method for forming a dielectric film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) performs one or more process cycles, each...
US-9,455,137 Method of manufacturing semiconductor device
An insulating film including characteristics such as low permittivity, a low etching rate and a high insulation property is formed. Supplying a gas containing...
US-9,455,136 Controlling the reflow behaviour of BPSG films and devices made thereof
A method for depositing an insulating layer includes performing a primary deposition over a sidewall of a feature by depositing a layer of silicate glass using...
US-9,455,135 Method for fabricating semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and...
US-9,455,134 Substrate processing method
A hydrophobizing agent vapor is supplied to a substrate and a surface of the substrate including a pattern is hydrophobized. Thereafter, the substrate is dried...
US-9,455,133 Hollow cathode device and method for using the device to control the uniformity of a plasma process
A chamber component configured to be coupled to a processing chamber is described. The chamber component comprises one or more adjustable gas passages through...
US-9,455,132 Ion mobility spectrometry-mass spectrometry (IMS-MS) with improved ion transmission and IMS resolution
An interface for an ion mobility spectrometry-mass spectrometry (IMS-MS) system includes a first ion guide for receiving ions from an IMS drift cell, and a...
US-9,455,131 Gas diffuser ion inlet
In some embodiments, a gas diffuser for use in a mass spectrometer is disclosed that can provide a controlled expansion of an ion-containing gas so as to reduce...
US-9,455,130 Preparation of test plates for matrix assisted laser desorption ionization
The present invention is directed, sample test plates that can be used in matrix assisted laser desorption ionization. These plates have an etched surface and a...
US-9,455,129 Segmented planar calibration for correction of errors in time of flight mass spectrometers
An ion detector system for a mass spectrometer is disclosed comprising an ion detector comprising an array of detector elements. The ion detector system is...
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