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Patent # Description
US-9,461,219 Method of producing light emitting device
A method of producing a light emitting device includes providing a light emitting element on a base member, the base member including an insulating member and a...
US-9,461,218 Surface light source
In at least one embodiment, a surface light source includes one or a more optoelectronic semiconductor chips having a radiation main side for generating a...
US-9,461,217 LED devices with reduced reflection and an LED display including same
LED devices are provided including an LED package including an LED and an optical element in an optical receiving relationship with the LED. The optical element...
US-9,461,216 Light emitting device
A light emitting device includes a semiconductor chip including a p-type semiconductor layer and an n-type semiconductor layer, the semiconductor chip being...
US-9,461,215 Semiconductor nanoparticle-based light-emitting devices and associated materials and methods
Embodiments of the present invention relate to a formulation for use in the fabrication of a light-emitting device, the formulation including a population of...
US-9,461,214 Light emitting device with phosphor layer
A method for manufacturing a light emitting device, having; a die bonding step of mounting a light emitting element on a board; a phosphor layer formation step...
US-9,461,213 LED sub-mount and method for manufacturing light emitting device using the sub-mount
A LED sub-mount includes a substrate body and a plurality of first electrical-conductive layers. The substrate body has a first surface. The first...
US-9,461,212 Light emitting diode module for surface mount technology and method of manufacturing the same
An LED is provided to include: a first conductive type semiconductor layer; an active layer positioned over the first conductive type semiconductor layer; a...
US-9,461,211 Method for producing a connection region of an optoelectronic semiconductor chip
The invention relates to a method for producing a connection region (70) of an optoelectronic semiconductor chip (100), comprising the following steps:...
US-9,461,210 Light emitting element and light emitting device using the same
A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in...
US-9,461,209 Semiconductor light-emitting device
A semiconductor light-emitting device includes a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer...
US-9,461,208 Light-emitting element
A light-emitting element comprises a light-emitting semiconductor stack comprising a first semiconductor layer, a second semiconductor layer on the first...
US-9,461,207 Light emitting device, and package array for light emitting device
A light emitting device includes a substantially cuboid package and a light emitting element. The package is made up of a molded article, and first and second...
US-9,461,206 Light-emitting device, light-emitting device module, and vehicle lighting unit
A light-emitting device module can include a plurality of light-emitting devices arranged in line so as to form a luminance distribution for preventing...
US-9,461,205 Nanostructure semiconductor light emitting device
A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer...
US-9,461,204 Light-emitting devices on textured substrates
A device includes a textured substrate, which further includes a plurality of trenches. Each of the plurality of trenches includes a first sidewall and a second...
US-9,461,203 Non-crystalline materials having complete photonic, electronic or phononic bandgaps
The invention provides an article of manufacture, and methods of designing and making the article. The article permits or prohibits waves of energy, especially...
US-9,461,202 High-efficiency light-emitting device and manufacturing method thereof
This invention provides a high-efficiency light-emitting device and the manufacturing method thereof The high-efficiency light-emitting device includes a...
US-9,461,201 Light emitting diode dielectric mirror
A high efficiency LED chip is disclosed that comprises an active LED structure comprising an active layer between two oppositely doped layers. A first...
US-9,461,200 Display apparatus, manufacturing method of display apparatus, and electronic device
A display apparatus includes: a display region provided with a plurality of pixel portions; wires installed to the respective pixel portions within the display...
US-9,461,199 Nanostructure semiconductor light-emitting device
There is provided a nanostructure semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor, an insulating...
US-9,461,198 Backside transparent substrate roughening for UV light emitting diode
In the present invention, a fabrication process for epitaxy onto back-side patterned substrate, where the substrate patterns were defined prior to epitaxy and...
US-9,461,197 Light-emitting element wafer, light emitting element, electronic apparatus, and method of producing...
A light-emitting element wafer includes a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second...
US-9,461,196 Non-crystalline inorganic light emitting diode
Non-crystalline inorganic light emitting diode. In accordance with a first embodiment of the present invention, an article of manufacture includes a light...
US-9,461,195 Method for producing a solar cell
The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the...
US-9,461,194 Method for fabricating P-type semiconductor substrate, solar cell and method for fabricating the same
A method for fabricating a p-type semiconductor substrate including the following steps is provided. A carrier is provided, and the carrier includes a III-V...
US-9,461,193 Focusing luminescent and thermal radiation concentrators
The present disclosure relates to focusing luminescent concentrators wherein directional emission, obtained by placing an absorber/emitter within a microcavity...
US-9,461,192 Thick damage buffer for foil-based metallization of solar cells
Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. A method involves patterning a first surface of a metal...
US-9,461,191 Mercapto-based coupling agent for improved thermophotovoltaic device back surface reflector adhesion and...
A back surface reflector (BSR) is described. The BSR includes a reflecting layer, a substrate and an adhesion layer between the reflecting layer and the...
US-9,461,190 Low profile sensor package with cooling feature and method of making same
A sensor device and method of making same that includes a silicon substrate with opposing first and second surfaces, a sensor formed at or in the first surface,...
US-9,461,189 Photovoltaic devices with electroplated metal grids
One embodiment of the present invention provides a solar cell. The solar cell includes a photovoltaic structure and a front-side metal grid situated above the...
US-9,461,188 Electro-conductive paste for forming an electrode of a solar cell device, a solar cell device and method for...
In order to provide an electro-conductive paste bringing no increase of the contact resistance for forming an electrode of a solar cell device, the...
US-9,461,187 Solar cell apparatus and method for manufacturing the same
Disclosed are a solar cell apparatus and a method for manufacturing the same. The solar cell apparatus includes a substrate; a back electrode layer including...
US-9,461,186 Back contact for a photovoltaic module
The present invention relates to photovoltaic modules and methods of manufacturing photovoltaic modules.
US-9,461,185 Anti-reflective and anti-soiling coatings with self-cleaning properties
Disclosed herein is a coated glass element including a glass component and a coating adhered to the glass component through siloxane linkages, the coating...
US-9,461,184 Capacitor and semiconductor device using same
A capacitor for a semiconductor device includes a bottom electrode plate, an insulating layer formed on the bottom electrode plate, and a top electrode plate...
US-9,461,183 Diode having a reduced surface field effect trench structure and method of manufacturing a diode having a...
A diode comprising a reduced surface field effect trench structure, the reduced surface field effect trench structure comprising at least two trenches formed in...
US-9,461,182 Memory cell
A memory cell including a substrate with a protruding portion, the protruding portion having a side wall and a bottom, an upper doped region connected to a bit...
US-9,461,181 Method for manufacturing semiconductor device
An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is...
US-9,461,180 Semiconductor device
The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of...
US-9,461,179 Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel...
A semiconductor device having stable electric characteristics is provided. The transistor includes first to third oxide semiconductor layers, a gate electrode,...
US-9,461,178 Semiconductor device having an effective use of the conductive layer formed in the same process as one electrode
A semiconductor device includes a first conductive layer, a first insulating layer over the first conductive layer, first and second oxide semiconductor layers...
US-9,461,176 Method for manufacturing semiconductor device
To reduce defects in an oxide semiconductor film in a semiconductor device. To improve electrical characteristics of and reliability in the semiconductor device...
US-9,461,175 Dual-mode memory devices and methods for operating same
A memory structure comprises a semiconductor strip having a multi-gate channel region, the p-type terminal region adjacent a first side of the channel region...
US-9,461,174 Method for the formation of silicon and silicon-germanium fin structures for FinFET devices
A substrate layer formed of a first semiconductor material includes adjacent first and second regions. Fin structures are formed from the substrate layer in...
US-9,461,173 Semiconductor device and method for fabricating the same
A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active...
US-9,461,172 Method for fabricating semiconductor device
Methods for fabricating semiconductor devices are provided. Gate structures are formed on a top surface of a substrate to form semiconductor devices. Trenches...
US-9,461,171 Methods of increasing silicide to epi contact areas and the resulting devices
One method disclosed includes, among other things, forming a gate structure above an active region of a semiconductor substrate, performing an epitaxial...
US-9,461,170 FinFET with ESD protection
In some embodiments, a field effect transistor structure includes a substrate, a fin structure and a gate structure. The fin structure is formed over the...
US-9,461,169 Device and method for fabricating thin semiconductor channel and buried strain memorization layer
A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor...
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