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Patent # Description
US-9,466,767 Optoelectronic device and method for manufacturing the same
An optoelectronic device comprises a semiconductor stack, a first metal layer formed above the semiconductor stack, wherein the first metal layer comprises a...
US-9,466,766 High-efficiency AlGaInP light-emitting diode grown directly on transparent substrate and manufacturing method...
The present invention relates to a high-efficiency AlGaInP light-emitting diode directly grown on a transparent substrate and a method of manufacturing the...
US-9,466,765 Method of manufacturing semiconductor light emitting device
A method of manufacturing a semiconductor light emitting device includes stacking a light emitting structure including a first conductivity type semiconductor...
US-9,466,764 Optoelectronic component including a substrate on which a semiconductor layer sequence with an identifier for...
The invention relates to an optoelectronic component (101, 301, 501), comprising a substrate (103, 303, 503), on which a semiconductor layer sequence (105, 305,...
US-9,466,763 Semiconductor light-emitting element
A semiconductor light-emitting element includes a substrate and a semiconductor stack portion provided on the substrate and having at least a...
US-9,466,762 Base and method for making epitaxial structure using the same
A base for making an epitaxial structure is provided. The base includes a substrate and a carbon nanotube layer. The substrate has an epitaxial growth surface....
US-9,466,761 Light emitting diode having well and/or barrier layers with superlattice structure
A light emitting diode (LED) having well and/or barrier layers with a superlattice structure is disclosed. An LED has an active region between an N-type...
US-9,466,760 Horizontal power LED device and method for manufacturing same
A method of manufacturing a horizontal power LED device includes constructing a light-emitting structure on a substrate, etching the light-emitting structure,...
US-9,466,759 Optoelectronic device and method for producing an optoelectronic device
A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the...
US-9,466,758 Composite substrates of silicon and ceramic
Composite substrates include a single crystal silicon layer disposed on a ceramic layer, including a transparent glass layer. Combination of single crystal...
US-9,466,757 Optical materials, optical components, devices, and methods
An optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein the optical material has a solid state...
US-9,466,756 Semiconductor device and manufacturing method thereof
An object is to improve reliability of a semiconductor device. A semiconductor device including a driver circuit portion and a display portion (also referred to...
US-9,466,755 MIS-IL silicon solar cell with passivation layer to induce surface inversion
The present invention relates generally to a photovoltaic solar cell device and more particularly, to a structure and method of inducing charge inversion in a...
US-9,466,754 Grain growth for solar cells
A solar cell can include a silicon layer formed over a silicon substrate. The silicon layer can have a P-type doped region and an N-type doped region. Portions...
US-9,466,753 Photodetector methods and photodetector structures
Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed...
US-9,466,752 Module assembly for thin solar cells
Solar cells are packaged by placing the solar cells between sheets of encapsulants. The encapsulants are exposed to ultraviolet (UV) light to cure the...
US-9,466,751 Avalanche photodiode having electric-field confinement by mesas
A novel photodetecting device having field confined by mesas is provided. The device is an avalanche photodiode (APD) of indium aluminum arsenide (InAlAs). The...
US-9,466,750 Hybrid polysilicon heterojunction back contact cell
A method for manufacturing high efficiency solar cells is disclosed. The method comprises providing a thin dielectric layer and a doped polysilicon layer on the...
US-9,466,749 Balanced solar tracker clamp
In an example, the present invention provides a solar tracker apparatus. In an example, the apparatus comprises a center of mass with an adjustable hanger...
US-9,466,748 Optoelectronic device with heat spreader unit
A solar module includes a solar cell, a heat spreader layer disposed above the solar cell, and a cell interconnect disposed above the solar cell. From a...
US-9,466,747 Avalanche photodiode and methods of forming the same
Solid state avalanche photodiode devices and methods of producing the same are described herein.
US-9,466,746 Compound-barrier infrared photodetector
Using a multiple layer, varied composition barrier layer in place of the typical single layer barrier layer of an infrared photodetector results in a device...
US-9,466,745 Composite quantum-dot materials for photonics detectors
A method of manufacturing a composite quantum-dot photodetector formed by alternatively dipping a substrate into a colloidal solution containing at least one...
US-9,466,744 Solar cell and method of fabricating the same
The inventive concepts provide a solar cell and a method of fabricating the same. The method includes preparing a substrate in a chamber, forming a light...
US-9,466,743 Copper-indium-gallium-chalcogenide nanoparticle precursors for thin-film solar cells
Nanoparticles containing IUPAC group 11 ions, group 13 ions and sulfur ions are synthesized by adding metal salts and an alkanethiol in an organic solvent and...
US-9,466,742 Method for fabricating photoelectric conversion material
A photoelectric conversion material is disclosed in the present invention and comprises at least a cone material. The cone material is composed of an isomer and...
US-9,466,741 Digital alloy absorber for photodetectors
In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy...
US-9,466,740 Integrated photodetector waveguide structure with alignment tolerance
An encapsulated integrated photodetector waveguide structures with alignment tolerance and methods of manufacture are disclosed. The method includes forming a...
US-9,466,739 Surface plasma wave coupled detectors
The present disclosure relates to an electromagnetic energy detector. The detector can include a substrate having a first refractive index; a metal layer; an...
US-9,466,738 Solar cell metallizations containing metal additive
Paste compositions, methods of making a paste composition, and methods of making a solar cell contact are disclosed. The paste composition can contain silver, a...
US-9,466,737 Solar panel string converter topology
The inventive technology, in certain embodiments, may be generally described as a solar power generation system with a converter, which may potentially include...
US-9,466,736 Discrete capacitor and manufacturing method thereof
A discrete capacitor of the present invention includes a substrate having a front surface portion, an impurity diffusion layer formed on the front surface...
US-9,466,735 Junction barrier schottky diode and method for manufacturing the same
A junction barrier Schottky diode is formed by shifting second semiconductor regions of a second conductivity type in a staggered shape in a first semiconductor...
US-9,466,734 Method of manufacturing semiconductor device and semiconductor device
To provide a semiconductor device having a vertical JFET excellent in off-state performance without reducing a production yield. A gate region quadrangular in...
US-9,466,733 Nonvolatile memory device and method for fabricating the same
This technology relates to a nonvolatile memory device and a method for fabricating the same. The nonvolatile memory device may include a pipe connection gate...
US-9,466,732 Split-gate memory cell with depletion-mode floating gate channel, and method of making same
A memory device having a substrate of semiconductor material of a first conductivity type, first and second spaced-apart regions in the substrate of a second...
US-9,466,731 Dual channel memory
Technologies are generally described related to a dual channel memory device, system and method of manufacture. Various described devices include utilization of...
US-9,466,730 Semiconductor device and method for fabricating the same
The invention provides a semiconductor device, including: a substrate of a first conductivity type having an active region and a termination region; an...
US-9,466,729 Etch stop region based fabrication of bonded semiconductor structures
Bonded semiconductor device structures and device structure fabrication processes to obviate the need for SOI wafers in many device fabrication applications are...
US-9,466,728 Semiconductor device and method for manufacturing the same
A highly reliable semiconductor device and a method for manufacturing the semiconductor device are provided. The semiconductor device is manufactured with a...
US-9,466,727 Semiconductor device and method of fabricating the same
A semiconductor device and a method of forming the same, the semiconductor device includes a substrate, a metal-oxide-semiconductor (MOS) transistor, a plug, a...
US-9,466,726 Semiconductor device and method for manufacturing the same
Provided is a bottom-gate transistor including an oxide semiconductor, in which electric-field concentration which might occur in the vicinity of an end portion...
US-9,466,725 Semiconductor device and method for manufacturing the same
A miniaturized transistor having high electrical characteristics can be provided with high yield. High performance, high reliability, and high productivity of a...
US-9,466,724 Semiconductor devices having source/drain and method of fabricating the same
According to an exemplary embodiment of the present embodiment, a semiconductor device is provided as follows. An active fin protrudes from a substrate,...
US-9,466,723 Liner and cap layer for placeholder source/drain contact structure planarization and replacement
A method includes forming a placeholder source/drain contact structure above a semiconductor material. A conformal deposition process is performed to form a...
US-9,466,722 Large area contacts for small transistors
A large area electrical contact for use in integrated circuits features a non-planar, sloped bottom profile. The sloped bottom profile provides a larger...
US-9,466,721 Semiconductor device having stressor and method of fabricating the same
A semiconductor device may include a fin active region including a lower fin active region surrounded by a device isolation layer and an upper fin active region...
US-9,466,720 Method of making a CMOS semiconductor device using a stressed silicon-on-insulator (SOI) wafer
A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer...
US-9,466,719 Semiconductor-on-insulator with back side strain topology
Embodiments of the present invention provide for the enhancement of transistors in a semiconductor structure using a strain layer. The structure comprises a...
US-9,466,718 Semiconductor device with fin and related methods
A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel...
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