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Complex semiconductor devices of the SOI type
The present disclosure provides, in a first aspect, a semiconductor device including an SOI substrate portion, a gate structure formed on the SOI substrate...
Dual-SiGe epitaxy for MOS devices
A semiconductor includes a semiconductor substrate, a gate stack on the semiconductor substrate, and a stressor having at least a portion in the semiconductor...
MOS transistor having a gate dielectric with multiple thicknesses
A novel MOS transistor including a well region, a gate dielectric layer, a gate electrode, a source region and a drain region is provided. The well region of a...
Vertical tunneling field-effect transistor cell with coaxially arranged
gate contacts and drain contacts
A tunneling field-effect transistor (TFET) device includes a source region, a gate stack, and a drain region. The TFET device further includes a source contact...
Non-floating vertical transistor structure
A non-floating vertical transistor includes a substrate and a protuberant structure extending from the substrate. A segregating pillar is inside the protuberant...
Resurf semiconductor device charge balancing
Breakdown voltage BVdss is enhanced and ON-resistance reduced in RESURF devices, e.g., LDMOS transistors, by careful charge balancing, even when body and drift...
Between a source electrode (25) of a main device (24) and a current sensing electrode (22) of a current detection device (21), a resistor for detecting current...
Source and body contact structure for trench-DMOS devices using
A semiconductor device includes a gate electrode, a top source region disposed next to the gate electrode, a drain region disposed below the bottom of the gate...
Silicon-carbide trench gate MOSFETs
In a general aspect, an apparatus can include a semiconductor substrate, a drift region disposed in the semiconductor substrate; a body region disposed in the...
Method of forming a transistor and structure therefor
In one embodiment, a semiconductor device is formed to include a gate structure extending into a semiconductor material that is underlying a first region of...
Planar mosfets and methods of fabrication, charge retention
A planar MOSFET includes a plurality of MOSFET cells. Each MOSFET cell includes an epitaxial layer of a first conductivity type, a body region of a second...
Semiconductor device including first and second gate insulating films
disposed on a semiconductor layer and...
A semiconductor device, comprises: a semiconductor layer, a first gate insulating film, a second gate insulating film and a gate electrode. The semiconductor...
Semiconductor device and method of manufacturing the same
A semiconductor device according to one embodiment includes an n-type first GaN-based semiconductor layer, a p-type second GaN-based semiconductor layer on the...
Nonvolatile memory device and method of manufacturing the same
A nonvolatile memory device and method of manufacturing the same are provided. In the nonvolatile memory device, a blocking insulation layer is provided between...
Method for fabricating semiconductor device
Provided are a method for fabricating a semiconductor device The method for fabricating include providing a substrate including a first region and a second...
Semiconductor device including multiple fin heights
A semiconductor device comprising a substrate, an base layer disposed on the substrate having a thickness C in first area and a thickness B in a second area and...
Processes for preparing integrated circuits with improved source/drain
contact structures and integrated...
Processes for preparing an integrated circuit for contact landing, processes for fabricating an integrated circuit, and integrated circuits prepared according...
Semiconductor device and method of fabricating same
A lateral drain metal oxide semiconductor (LDMOS) device includes a well region having a second conductive type in a substrate, a body region having a first...
Manufacturing method for vertical channel gate-all-around MOSFET by
A manufacturing method is provided for fabricating a vertical channel gate-all-around MOSFET by epitaxy processes. The method includes growing a first epitaxial...
Electronic device including vertical conductive regions and a process of
forming the same
An electronic device can include different vertical conductive structures that can be formed at different times. The vertical conductive structures can have the...
Semiconductor devices and methods of manufacturing the same
Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of...
FinFETs and methods for forming the same
A device includes a semiconductor fin, a gate dielectric on sidewalls of the semiconductor fin, a gate electrode over the gate dielectric, and isolation...
Valve for fluid circulation
A valve is provided with a casing forming an enclosure for fluid flow with a fluid inlet and outlet, a shutter cooperating with a seat integral with the casing...
Metal-oxide-semiconductor transistor device and manufacturing method
A method for manufacturing a MOS transistor device includes following steps. A substrate including at least an isolation structure formed therein is provided....
Self aligned replacement metal source/drain finFET
A method of a fin-shaped field effect transistor (finFET) device includes forming at least one fin that extends in a first direction; covering the fin with a...
Method to improve reliability of replacement gate device
A method of fabricating a replacement gate stack for a semiconductor device includes the following steps after removal of a dummy gate: growing a high-k...
Fin shaped structure and method of forming the same
A fin shaped structure and a method of forming the same, wherein the method includes forming a fin structure on a substrate. Next, an insulation layer is formed...
Precisely controlling III-V height
After forming trenches extending through a dielectric material stack including, from bottom to top, a first dielectric layer, a second dielectric layer and a...
Method for manufacturing a semiconductor device and semiconductor device
A semiconductor device includes an input electrode provided on a front surface of a semiconductor substrate of a first conductivity type and an output electrode...
Semiconductor device with multilayer contact and method of manufacturing
The present invention provides a semiconductor with a multilayered contact structure. The multilayered structure includes a metal contact placed on an active...
Methods for producing bipolar transistors with improved stability
Instability and drift sometimes observed in bipolar transistors, having a portion of the base extending to the transistor surface between the emitter and base...
Graphene devices with local dual gates
An electronic device comprises an insulator, a local first gate embedded in the insulator with a top surface of the first gate being substantially coplanar with...
Semiconductor structure including at least one electrically conductive
pillar, semiconductor structure...
A semiconductor structure includes a substrate, at least one electrically conductive pillar provided over the substrate and an electrically conductive structure...
Transistor with diamond gate
A field effect transistor having a diamond gate electrode and a process for forming the same. In some embodiments, the device is an AlGaN/GaN ...
A semiconductor device includes a pillar-shaped silicon layer on a fin-shaped silicon layer. A gate insulating film and a metal gate electrode are around the...
Thin film transistor array panel
A thin film transistor array panel is capable of increasing an aperture ratio and decreasing parasitic capacitance between a gate electrode and a drain...
Method and apparatus for forming a semiconductor gate
The present disclosure provides an apparatus and method for fabricating a semiconductor gate. The apparatus includes, a substrate having an active region and a...
Integrated multiple gate length semiconductor device including
A multi-channel semiconductor device includes a first and second gate channels formed in a semiconductor substrate. The first gate channel has a first length...
All around contact device and method of making the same
A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region...
Semiconductor device and manufacturing method thereof
The present invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, an epitaxial...
Semiconductor structure including guard ring
One or more embodiments relate to a semiconductor structure, comprising: a conductive feature; an outer guard ring; and an inner guard ring between the outer...
Method for forming a semiconductor device having a metal gate recess
Provided are approaches of forming a semiconductor device (e.g., transistor such as a FinFET or planar device) having a gate metal recess. In one approach, a...
Method of manufacturing silicon carbide semiconductor device
A recess is formed by partially etching a silicon carbide substrate. A mask layer is formed on the silicon carbide substrate by means of photolithography using...
Semiconductor devices with non-implanted barrier regions and methods of
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a Schottky junction with the drift region, and...
Complementary metal-oxide silicon having silicon and silicon germanium
A silicon germanium on insulator (SGOI) wafer having nFET and pFET regions is accessed, the SGOI wafer having a silicon germanium (SiGe) layer having a first...
Reduced defect densities in graded buffer layers by tensile strained
A semiconductor stack includes a substrate; a first semiconductor layer disposed on the substrate; a tensile strained interlayer layer disposed on the first...
Semiconductor device having fin gate, resistive memory device including
the same, and method of manufacturing...
A semiconductor device having a fin gate that improves an operation current, and a method of manufacturing the same are provided. The semiconductor device...
Sandwich epi channel for device enhancement
The present disclosure relates to a method of forming a transistor device having a channel region comprising a sandwich film stack with a plurality of different...
Multiple channel length finFETs with same physical gate length
A semiconductor structure includes a first finFET device including a first fin, a first gate electrode structure on sidewalls and an upper surface of the first...
Inducing localized strain in vertical nanowire transistors
A device includes a semiconductor substrate and a vertical nano-wire over the semiconductor substrate. The vertical nano-wire includes a bottom source/drain...