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Patent # Description
US-9,466,516 Method of manufacturing thermal insulation wall body
A method of manufacturing a cylindrical thermal insulation wall body having a holding unit of a heater element formed in an inner peripheral surface includes...
US-9,466,515 Heat treatment furnace and heat treatment apparatus
A heat treatment furnace includes: a processing vessel configured to accommodate therein at least one object to be processed; a cylindrical heat insulating...
US-9,466,514 System for the heat treatment of substrates, and method for detecting measurement data in said system
The present invention relates to a device (100) for the heat treatment of substrates and to a method for recording measurement data in said device, where said...
US-9,466,513 Treatment liquid supply apparatus and substrate treatment apparatus including the same
A treatment liquid supply apparatus supplies a treatment liquid to a predetermined object for treatment of a substrate, and recovers the supplied treatment...
US-9,466,512 Substrate cleaning apparatus and substrate processing apparatus
A substrate cleaning apparatus which can sufficiently clean a pen-sponge in its entirety, and can prevent particles, which have been once removed, from being...
US-9,466,511 Systems and methods for drying high aspect ratio structures without collapse using stimuli-responsive...
Systems and methods for drying a substrate including a plurality of high aspect ratio (HAR) structures is performed after at least one of wet etching and/or wet...
US-9,466,510 Organic electronic devices
A technique comprising: mounting a device substrate on a processing support, forming one or more electronic elements on the device substrate with the device...
US-9,466,509 Semiconductor device manufacturing method
A method of manufacturing a semiconductor device, includes preparing a molding die for molding a resin case for a semiconductor device, the molding die having...
US-9,466,508 Liquid composition used in etching multilayer film containing copper and molybdenum, manufacturing method of...
The present invention provides a liquid composition used for etching a multilayer film containing copper and molybdenum, an etching method for etching a...
US-9,466,507 Etching method, and recording medium
An etching method includes a modification process of supplying a mixture gas to a surface of a silicon oxide film, modifying the silicon oxide film to generate...
US-9,466,506 Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium
The present invention is to provide a technique for uniformly processing a substrate surface in the process of processing a substrate by supplying a gas. The...
US-9,466,505 Methods of patterning features having differing widths
A method includes forming a layer of material above a semiconductor substrate and performing a first sidewall image transfer process to form a first plurality...
US-9,466,504 Methods of fabricating features associated with semiconductor substrates
Some embodiments include a method of fabricating features associated with a semiconductor substrate. A first region of the semiconductor substrate is altered...
US-9,466,503 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device includes forming a second insulating layer over a first insulating layer, forming a mask over the second...
US-9,466,502 Line width roughness improvement with noble gas plasma
A method for forming lines in an etch layer on a substrate may comprise providing a ultra-violet (UV) producing gas to a vacuum chamber having a photoresist...
US-9,466,501 Method and apparatus for improving CMP planarity
Provided is a method of planarizing a semiconductor device. A dielectric layer is formed over a substrate. A plurality of openings is formed in the dielectric...
US-9,466,500 Method and apparatus for direct formation of nanometer scaled features
An apparatus and use of the apparatus to form nanometer sized features on a workpiece includes a plurality of individually biasable tips, and each tip has a...
US-9,466,499 Combinatorial methods for developing electrochromic materials and devices
A substrate having a plurality of site-isolated regions defined thereon is provided. A first electrochromic material, or a first electrochromic device stack, is...
US-9,466,498 CMOS gas sensor and method for manufacturing the same
A CMOS gas sensor comprises a membrane (13) extending over an opening (12) of a silicon substrate (1). A patch (2) of sensing material is arranged on the...
US-9,466,497 Method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell
The invention provides a method for fabricating a silicon-oxide-nitride-oxide-silicon (SONOS) non-volatile memory cell, comprising: (S1) forming a pad oxide...
US-9,466,496 Spacer formation with straight sidewall
Disclosed herein is a semiconductor device comprising a first dielectric disposed over a channel region of a transistor formed in a substrate and a gate...
US-9,466,495 Chemical dielectric formation for semiconductor device fabrication
Systems and methods are provided for fabricating semiconductor devices. For example, a substrate is provided. A polymer layer is formed on the substrate. An...
US-9,466,494 Selective growth for high-aspect ration metal fill
An improved conductive feature for a semiconductor device and a technique for forming the feature are provided. In an exemplary embodiment, the semiconductor...
US-9,466,493 Sense amplifier layout for FinFET technology
A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a...
US-9,466,492 Method of lateral oxidation of NFET and PFET high-K gate stacks
A method for fabricating a semiconductor circuit includes obtaining a semiconductor structure having a gate stack of material layers including a high-k...
US-9,466,491 Methods of forming a semiconductor device with a spacer etch block cap and the resulting device
One illustrative method disclosed herein includes, among other things, forming a sacrificial gate structure above a semiconductor substrate, forming a sidewall...
US-9,466,490 Beam shapers, annealing systems employing the same, methods of heat treating substrates and methods of...
A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned...
US-9,466,489 Process for forming edge wordline implants adjacent edge wordlines
A process for forming tilted edge wordline implants is disclosed. The process includes forming a first drain implant in a substrate, forming a first tilted...
US-9,466,488 Metal-semiconductor contact structure with doped interlayer
Disclosed herein is a method of forming a metal-to-semiconductor contact with a doped metal oxide interlayer. An insulating layer is formed on a top surface of...
US-9,466,487 Photolithographic methods of producing structures in radiation-emitting semiconductor components
A photolithographic method which produces a structure in a radiation-emitting semiconductor component by providing a semiconductor wafer having a semiconductor...
US-9,466,486 Method for integrated circuit patterning
A method of forming a target pattern includes forming a first trench in a substrate with a cut mask; forming a first plurality of lines over the substrate with...
US-9,466,485 Conductor pattern forming method, and semiconductor device manufacturing method
A conductor pattern forming method includes forming, on a conductor film, a laminated film including a first layer thinner than the conductor film, a second...
US-9,466,484 Manufacturing method of semiconductor device
A manufacturing method of a semiconductor device is provided. The manufacturing method includes the following steps. A plurality of fin structures are formed in...
US-9,466,483 Film deposition apparatus and film deposition method
A film deposition apparatus includes a turntable to rotate a substrate thereon, a process gas supply part to supply a process gas to form a thin film on the...
US-9,466,481 Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified...
The present invention discloses an electronic device using a group III nitride substrate fabricated via the ammonothermal method. By utilizing the high-electron...
US-9,466,480 Cleaning process for oxide
A cleaning process for oxide includes the following step. A substrate having a first area and a second area is provided. A first oxide layer is formed on the...
US-9,466,479 System and process for high-density, low-energy plasma enhanced vapor phase epitaxy
A process for epitaxial deposition of compound semiconductor layers includes several steps. In a first step, a substrate is removably attached to a substrate...
US-9,466,478 Film forming method and film forming apparatus
A method of forming an oxide film on an object to be processed, includes: supplying a film-forming raw material gas into a processing chamber; performing at...
US-9,466,477 Method of manufacturing semiconductor device, substrate processing apparatus, and semiconductor device
There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid...
US-9,466,476 Film-forming method for forming silicon oxide film on tungsten film or tungsten oxide film
A film-forming method includes forming a tungsten film or a tungsten oxide film on an object to be processed, forming a seed layer on the tungsten film or the...
US-9,466,475 Ashing device
An ashing device that prevents the ashing rate from changing over time. The ashing device ashes organic material on a substrate including an exposed metal in a...
US-9,466,474 Triple quadrupole mass spectrometer
The present triple quadrupole mass spectrometer determines the relationship between a parameter, such as the mass-to-charge ratio of a precursor ion or that of...
US-9,466,473 Coaxial ion guide
A method of mass and/or ion mobility spectrometry is disclosed comprising: trapping ions in an annular or co-axial ion trap; and then axially ejecting at least...
US-9,466,472 Mass spectrometer
An ion guide is disclosed comprising one or more layers of intermediate planar, plate or mesh electrodes. A first array of first electrodes is provided on a...
US-9,466,471 Systems and methods for using interleaving window widths in tandem mass spectrometry
Systems and methods are provided for analyzing a sample using overlapping measured mass selection window widths. A mass range of a sample is divided into two or...
US-9,466,470 Systems and methods for acquiring data for mass spectrometry images
Systems and methods are provided for maximizing the data acquired from a sample in a mass spectrometry imaging experiment. An ion source device is instructed to...
US-9,466,469 Remote plasma source for controlling plasma skew
A plasma source is provided including a core element extending from a first end to a second end along a first axis. The plasma source further includes one or...
US-9,466,468 Shower head, plasma processing apparatus and plasma processing method
A shower head includes a gas injection plate and a gas supply unit. The gas supply unit has a first gas supply path provided in a region along the axis and a...
US-9,466,467 Ion implantation apparatus
An ion implantation apparatus includes: a plurality of units for accelerating an ion beam generated in an ion source; and a plurality of units for adjusting a...
US-9,466,466 Determination of semiconductor chamber operating parameters for the optimization of critical dimension uniformity
Methods, systems, and computer programs are presented for optimizing Critical Dimension Uniformity (CDU) during the processing of a substrate. One method...
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