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Patent # Description
US-9,466,415 Reactor provided with a cooler
A reactor provided with a cooler, comprising: a coil, a core formed of a soft magnetic material, the core covers an inside of the coil and an outer periphery of...
US-9,466,414 Vibration stabilizer for enclosure cooling fins
An enclosure for an electrical apparatus includes a tank having a bank of corrugate affixed to one or more walls thereof, with the bank of corrugate including a...
US-9,466,413 Die-to-die inductive communication devices and methods
Embodiments of inductive communication devices include first and second galvanically isolated IC die and a dielectric structure. Each IC die has a coil...
US-9,466,412 Magnetic contactor
The magnetic contactor, according to an exemplary embodiment, includes: a moving core including a main core disposed to be movable in a length direction thereof...
US-9,466,411 Non-oriented electrical steel sheet
A non-oriented electrical steel sheet has a chemical composition including, in mass %, C: 0.005% or less, Si: 5% or less, Al: 3% or less, Mn: 5% or less, S:...
US-9,466,410 Slide-type variable resistor
A slide-type variable resistor comprises a shell, two side guiding tracks, two end locking parts, a variable resistor circuit base, and a manipulating device....
US-9,466,409 Electrical insulation system
An electrical insulation system for a high voltage inductive device includes a cylindrical insulation barrier defining an axial direction, a longitudinal bar...
US-9,466,408 Manufacturing device and manufacturing method of differential signal transmission cable
To provide a differential signal transmission cable in which there is no gap between an insulated wire and a shield tape, a manufacturing device thereof is a...
US-9,466,407 Electrical cable comprising at least one electrically insulating layer
An electrical cable has an elongate electrical conductor having, in cross section, a plurality of mutually electrically insulated segments having a plurality of...
US-9,466,406 Communication cable
A communication cable is provided which can suppress the shielding performance thereof. A communication cable 1 includes one or a plurality of conductors 10, an...
US-9,466,405 High voltage power cable for ultra deep waters applications
A high voltage power cable (1) includes at least two insulated conductors (2) and an armor package (6) surrounding the conductors (2). The cable (1) has a...
US-9,466,404 Rigid/pliable sectional resin infused shielded wire harness
Electrical harnesses and methods of manufacturing electrical harnesses are disclosed. Electrical harnesses may comprise an electrically conductive wire, and a...
US-9,466,403 Method for producing a flexible transparent electrode using cesium and a flexible transparent electrode...
An method for preparing a flexible transparent electrode film that has a high transmittance and low sheet resistance without having to go through a separate...
US-9,466,402 Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type...
Process and system for processing a thin film sample, as well as at least one portion of the thin film structure are provided. Irradiation beam pulses can be...
US-9,466,401 Tritium direct conversion semiconductor device
A device for producing electricity. The device comprises an indium gallium phosphide semiconductor material comprising a plurality of indium gallium phosphide...
US-9,466,400 Ventilated transfer cask with lifting feature
An apparatus for transferring spent nuclear fuel in the form of a cask having a cylindrical inner shell forming a cavity configured to receive a canister...
US-9,466,399 Expansion gap radiation shield
An expansion gap radiation shield is formed from a flexible container housing a radiation shielding fluid, that is located within a variable gap in permanent...
US-9,466,398 Ceramic-ceramic composites and process therefor, nuclear fuels formed thereby, and nuclear reactor systems and...
A process of producing ceramic-ceramic composites, including but not limited to nuclear fuels, and composites capable of exhibiting increased thermal...
US-9,466,397 Indirect drive targets for fusion power
A hohlraum for an inertial confinement fusion power plant is disclosed. The hohlraum includes a generally cylindrical exterior surface, and an interior rugby...
US-9,466,396 Semiconductor devices and semiconductor systems including the same
Semiconductor devices are provided. One of the semiconductor devices may include a synthetic clock generator and a flag signal generator. The synthetic clock...
US-9,466,395 Methods and apparatus for testing and repairing digital memory circuits
An ActiveTest solution for memory is disclosed which can search for memory errors during the operation of a product containing digital memory. The ActiveTest...
US-9,466,394 Mismatch-compensated sense amplifier for highly scaled technology
Circuits and methods are provided for compensating an offset voltage measured between a first transistor and a second transistor of a sense amplifier circuit...
US-9,466,393 Semiconductor device capable of rescuing defective characteristics occurring after packaging
A memory device capable of rescuing defective characteristics that occur after packaging includes a memory cell array including a plurality of memory cells and...
US-9,466,392 Memory array with memory cells arranged in pages
A memory array includes a first memory page and a second memory page. The first memory page includes a first word line, a first select gate line, a first...
US-9,466,391 Semiconductor device having fuse array with disconnectable voltage generator and method of operating the same
A semiconductor device that includes a fuse array including a plurality of fuses, and suitable for operating using a fuse operation voltage in a fuse operation...
US-9,466,390 Nonvolatile memory system and programming method including a reprogram operation using a page buffer to reduce...
A program method for a nonvolatile memory system including a reprogram operation that does not require a reload of first program data to page buffers of a...
US-9,466,389 Multiple programming pulse per loop programming and verification method for non-volatile memory devices
A semiconductor device includes a memory block including memory cells connected to a word line, and an operation circuit suitable for consecutively applying a...
US-9,466,388 Readout circuit with self-detection circuit and control method therefor
A readout circuit with a self-detection circuit and a control method therefor. The circuit comprises a pre-charging circuit and a control circuit, the...
US-9,466,387 Operating method of nonvolatile memory and method of controlling nonvolatile memory
An operating method of a nonvolatile memory, which includes a plurality of cell strings, each cell string having a plurality of memory cells and a string...
US-9,466,386 Storage device and related programming method
A method of programming a storage device comprises determining whether at least one open page exists in a memory block of a nonvolatile memory device, and as a...
US-9,466,385 Methods and apparatus related to a write protect fastener
In a general aspect, a circuit can include a printed circuit board having an opening defined therein and an electrical write line disposed on the circuit board....
US-9,466,384 Memory device and associated erase method
A memory device and an erase method for the memory device are provided. The memory device includes plural blocks and a controller. The plural blocks include at...
US-9,466,383 Non-volatile memory and method with adaptive logical groups
A nonvolatile memory is organized into blocks as erase units and physical pages as read/write units. A host addresses data by logical pages, which are storable...
US-9,466,382 Compensation for sub-block erase
A non-volatile memory system that has two or more sub-blocks in a block performs a check before accessing memory cells to see if the condition of a sub-block...
US-9,466,381 Semiconductor device
A semiconductor device includes a memory block including memory cells coupled between bit lines and a common source line and operated by voltages applied to...
US-9,466,380 Semiconductor memory column decoder device and method
Semiconductor memory devices and methods include a flash memory cell array fabricated in a well, with memory cells in the same column connected to each other in...
US-9,466,379 Semiconductor device and operating method thereof
An operating method of a semiconductor device includes repeating an erase loop operable to lower threshold voltages of memory cells in a selected memory block...
US-9,466,378 Semiconductor memory device
A semiconductor memory device includes a plurality of memory cell transistors electrically connected in series, a bit line electrically connected to a first end...
US-9,466,377 Method and device for processing an erase counter
A embodiment relates to a method for processing an erase counter comprising erase counter fields, the method comprising the steps of (i) determining an unused...
US-9,466,376 Semiconductor memory device and operating method thereof
A semiconductor memory device includes a memory cell array including a plurality of memory cells, a peripheral circuit for applying a program voltage and...
US-9,466,375 Memory device and programming method thereof
A memory device and a programming method thereof are provided, and the programming method for the memory device includes following steps. During a first period,...
US-9,466,374 Systems, methods, and apparatus for memory cells with common source lines
Systems, methods, and apparatus are disclosed for implementing memory cells having common source lines. The methods may include receiving a first voltage at a...
US-9,466,373 Nonvolatile semiconductor storage device
According to one embodiment, a nonvolatile semiconductor storage device includes a word line transfer unit which transfers voltage applied to a memory cell...
US-9,466,372 Semiconductor memory device improving threshold voltage of unselected memory block and operating method thereof
The present invention relates to a semiconductor memory device and an operating method thereof. The semiconductor memory device may include at least two memory...
US-9,466,371 Transistor and circuit using same
A transistor is described including a fly-over conductor. The transistor has a gate, a channel and a source/drain terminal. The fly-over conductor is disposed...
US-9,466,370 Non-volatile semiconductor storage device
According to one embodiment, there is provided a non-volatile semiconductor storage device including a non-volatile memory, a monitoring section, a determining...
US-9,466,369 Word line-dependent ramping of pass voltage and program voltage for three-dimensional memory
Techniques are provided for programming a three-dimensional memory device while minimizing over-programming and program disturb. When a selected word line is at...
US-9,466,368 Connectible nanotube circuit
Carbon nanotube template arrays may be edited to form connections between proximate nanotubes and/or to delete undesired nanotubes or nanotube junctions.
US-9,466,367 Memory device, method of controlling memory device, and memory system
A memory device according to an embodiment comprises a data processing circuit that includes: a data write pre-processing circuit that processes input data to...
US-9,466,366 Resistive memory and memory cell thereof
A resistive memory apparatus and a memory cell thereof are provided. The resistive memory cell includes a first bit line switch, a first resistor, a first word...
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