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Patent # Description
US-9,472,635 Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide substrate, a main electrode, a first barrier layer, and an interconnection layer. The main...
US-9,472,634 All around contact device and method of making the same
A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region...
US-9,472,633 Transistor gate having an insulating layer support structure
Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a gate, a source pad and a drain pad arranged...
US-9,472,632 Semiconductor device
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, and a core device and a dummy device disposed on the...
US-9,472,631 Flexible active matrix circuits for interfacing with biological tissue
High resolution active matrix nanowire circuits enable a flexible and stretchable platform for probing neural circuits. Fabrication of such circuits includes...
US-9,472,630 Deposit/etch for tapered oxide
A process for fabricating a tapered field plate dielectric for high-voltage semiconductor devices is disclosed. The process may include depositing a thin layer...
US-9,472,629 Gallium nitride semiconductor substrate with semiconductor film formed therein
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to...
US-9,472,628 Heterogeneous source drain region and extension region
A semiconductor structure includes a source drain region of a first material that may fulfill contact resistance and doping requirements and an extension region...
US-9,472,627 Semiconductor heterostructure and method of fabrication thereof
A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first...
US-9,472,626 High performance III-nitride power device
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
US-9,472,625 Operational Gallium Nitride devices
A power circuit is described that includes a semiconductor body having a common substrate and a Gallium Nitride (GaN) based substrate. The GaN based substrate...
US-9,472,624 Semiconductor buffer structure, semiconductor device including the same, and manufacturing method thereof
A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride...
US-9,472,623 Nitride semiconductor element and nitride semiconductor package
A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device...
US-9,472,622 Semiconductor device and method for fabricating the same
A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a...
US-9,472,621 CMOS structures with selective tensile strained NFET fins and relaxed PFET fins
A method of forming CMOS structures with selective tensile strained NFET fins and relaxed PFET fins includes performing a first, partial fin etch on a tensile...
US-9,472,620 Semiconductor device including fin structures and manufacturing method thereof
In a method for manufacturing a semiconductor device, a first semiconductor layer is formed over substrate. An etching stop layer is formed over the first...
US-9,472,619 Printing sleeve including meltable polymeric cord reinforcing layer or polymeric reinforcing layer
A printing sleeve is provided which includes a reinforcing layer formed from a polymeric cord reinforcing material which softens and flows at a temperature less...
US-9,472,618 Nanowire field effect transistor device having a replacement gate
One embodiment of the instant disclosure provides a transistor device that comprises: a semiconductor substrate; a buffer layer formed in a fin structure over...
US-9,472,617 Semiconductor device
Provided is a semiconductor device. The semiconductor device includes an isolation region disposed in a semiconductor substrate and configured to define an...
US-9,472,616 Undercut insulating regions for silicon-on-insulator device
A method of making a silicon-on-insulator (SOI) semiconductor device includes etching an undercut isolation trench into an SOI substrate, the SOI substrate...
US-9,472,615 Super junction LDMOS finFET devices
A fin-shaped field-effect transistor (finFET) device is provided. The finFET device includes a substrate material with a top surface and a bottom surface. The...
US-9,472,614 Super junction semiconductor device
There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed...
US-9,472,613 Conversion of strain-inducing buffer to electrical insulator
Techniques are disclosed for converting a strain-inducing semiconductor buffer layer into an electrical insulator at one or more locations of the buffer layer,...
US-9,472,612 Integrated capacitor
A method includes forming first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and...
US-9,472,611 Semiconductor device and method of manufacturing the same
A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region...
US-9,472,610 Substrate
A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers...
US-9,472,609 Methods of manufacturing polyresistors with selected TCR
Various embodiments provide computer program products and computer implemented methods. In some embodiments, aspects provide for a method of manufacturing a...
US-9,472,608 Chip inductor
Disclosed herein is a chip inductor. The chip inductor according to the present invention includes a substrate on which a through-hole is formed, a conductive...
US-9,472,607 Active matrix using hybrid integrated circuit and bipolar transistor
A hybrid integrated circuit device includes a semiconductor-on-insulator substrate having a base substrate, a semiconductor layer and a dielectric layer...
US-9,472,606 Organic electroluminescence display panel and organic electroluminescence display apparatus
An organic electroluminescence (EL) display panel includes a cathode electrode formed above a bank and formed opposite to a plurality of anode electrodes, and a...
US-9,472,605 Organic light-emitting diode display with enhanced aperture ratio
An organic light-emitting diode display may have an array of pixels. Each pixel may have an organic light-emitting diode with an anode and cathode. The anodes...
US-9,472,603 Package method of substrate and package structure
The present invention provides a package method of a substrate and a package structure. The method comprises: step 1, providing the substrate (1) and a package...
US-9,472,602 Display systems and devices having array of photovoltaic material configured to absorb and convert light into...
A display device is provided. A photovoltaic material (61) is evenly disposed in a display layer (6), so that an array formed by the photovoltaic material (61)...
US-9,472,601 Light-emitting device and display device
A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is...
US-9,472,600 AMOLED display devices and methods for producing the sub-pixel structure thereof
One embodiment of the present invention discloses an AMOLED display device and a method for producing the sub-pixels thereof. To change the metal masks used for...
US-9,472,599 Light emitting device
A light emitting device includes a substrate, a coupling unit and an organic light emitting unit. The coupling unit includes a first conductive layer, a first...
US-9,472,598 Light emitting device comprising organic light-emitting elements electrically connected in series
The present invention relates to an organic light-emitting element comprising a first electrode, a second electrode, and an organic layer interposed between...
US-9,472,597 Systems, apparatuses and methods for converting light wavelengths
In one aspect, an apparatus for converting light having a first wavelength to a light having a second wavelength is provided. The apparatus includes an...
US-9,472,596 Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and...
Some embodiments relate to an integrated circuit device including an array of memory cells disposed over a semiconductor substrate. An array of first metal...
US-9,472,595 Perpendicular MRAM with magnet
The present invention is directed to a magnetic random access memory (MRAM) comprising an MRAM die having a front side that includes therein a plurality of...
US-9,472,594 Light emitting diode chip
An LED chip for use in an LED chip array forming a continuous array of LEDs. The LED chip comprises an array of LEDs on a substrate. LEDs in a row of the array...
US-9,472,593 Light sources utilizing segmented LEDs to compensate for manufacturing variations in the light output of...
A light source and method for making the same are disclosed. The light source includes a plurality of Segmented LEDs connected in parallel to a power bus and a...
US-9,472,592 Imaging device, electronic apparatus, and method of manufacturing the imaging device having a reduced p-n...
An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received...
US-9,472,591 Semiconductor image pickup device
According to one embodiment, a semiconductor image pickup device includes a pixel area and a non-pixel area. The device includes a first photoelectric...
US-9,472,590 Solid-state image capturing device and manufacturing method thereof
An aspect of the invention is a solid-state image capturing device that includes a P-type well 12, an N-type low concentration diffusion layer 18 formed in the...
US-9,472,589 Solid-state imaging device and electronic apparatus
An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the...
US-9,472,588 Monolithic visible-infrared focal plane array on silicon
A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting...
US-9,472,587 Storage transistor with optical isolation
A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to...
US-9,472,586 Light sensor having transparent substrate and through-substrate vias and a contiguous IR suppression filter
Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light...
US-9,472,585 Semiconductor package, semiconductor device manufacturing method, and solid-state imaging device
A semiconductor package includes: a sheet-like thin plate on which a semiconductor chip is secured; and a substrate including a wiring layer, disposed on the...
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