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Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide substrate, a main electrode, a first barrier layer, and an interconnection layer. The main...
All around contact device and method of making the same
A device is provided that comprises a first pillar disposed in a first region and overlying a base structure, and a second pillar disposed in a second region...
Transistor gate having an insulating layer support structure
Embodiments include but are not limited to apparatuses and systems including a microelectronic device including a gate, a source pad and a drain pad arranged...
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, and a core device and a dummy device disposed on the...
Flexible active matrix circuits for interfacing with biological tissue
High resolution active matrix nanowire circuits enable a flexible and stretchable platform for probing neural circuits. Fabrication of such circuits includes...
Deposit/etch for tapered oxide
A process for fabricating a tapered field plate dielectric for high-voltage semiconductor devices is disclosed. The process may include depositing a thin layer...
Gallium nitride semiconductor substrate with semiconductor film formed
A method of fabricating a single crystal gallium nitride substrate the step of cutting an ingot of single crystal gallium nitride along predetermined planes to...
Heterogeneous source drain region and extension region
A semiconductor structure includes a source drain region of a first material that may fulfill contact resistance and doping requirements and an extension region...
Semiconductor heterostructure and method of fabrication thereof
A III-V compound semiconductor heterostructure grown on a substrate is described. The heterostructure includes a first semiconductor layer, wherein the first...
High performance III-nitride power device
A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.
Operational Gallium Nitride devices
A power circuit is described that includes a semiconductor body having a common substrate and a Gallium Nitride (GaN) based substrate. The GaN based substrate...
Semiconductor buffer structure, semiconductor device including the same,
and manufacturing method thereof
A semiconductor structure including a first nitride semiconductor layer, a second nitride semiconductor layer, and a third layer between the first nitride...
Nitride semiconductor element and nitride semiconductor package
A nitride semiconductor element capable of accommodating GaN electron transfer layers of a wide range of thickness, so as to allow greater freedom of device...
Semiconductor device and method for fabricating the same
A semiconductor device includes an emitter electrode and a first field plate disposed on one surface of a substrate and spaced apart from each other, a...
CMOS structures with selective tensile strained NFET fins and relaxed PFET
A method of forming CMOS structures with selective tensile strained NFET fins and relaxed PFET fins includes performing a first, partial fin etch on a tensile...
Semiconductor device including fin structures and manufacturing method
In a method for manufacturing a semiconductor device, a first semiconductor layer is formed over substrate. An etching stop layer is formed over the first...
Printing sleeve including meltable polymeric cord reinforcing layer or
polymeric reinforcing layer
A printing sleeve is provided which includes a reinforcing layer formed from a polymeric cord reinforcing material which softens and flows at a temperature less...
Nanowire field effect transistor device having a replacement gate
One embodiment of the instant disclosure provides a transistor device that comprises: a semiconductor substrate; a buffer layer formed in a fin structure over...
Provided is a semiconductor device. The semiconductor device includes an isolation region disposed in a semiconductor substrate and configured to define an...
Undercut insulating regions for silicon-on-insulator device
A method of making a silicon-on-insulator (SOI) semiconductor device includes etching an undercut isolation trench into an SOI substrate, the SOI substrate...
Super junction LDMOS finFET devices
A fin-shaped field-effect transistor (finFET) device is provided. The finFET device includes a substrate material with a top surface and a bottom surface. The...
Super junction semiconductor device
There is provided a super junction semiconductor device. The super junction semiconductor device includes a cell area and a junction termination area disposed...
Conversion of strain-inducing buffer to electrical insulator
Techniques are disclosed for converting a strain-inducing semiconductor buffer layer into an electrical insulator at one or more locations of the buffer layer,...
A method includes forming first, second, and third conductive leaf structures. The first conductive leaf structure includes a first conductive midrib and...
Semiconductor device and method of manufacturing the same
A semiconductor device includes: a semiconductor substrate; a base above the semiconductor substrate; a first conductive plug in the base; a memory cell region...
A substrate having a dielectric film thereon, in which: the dielectric film comprises at least four stacked layers of a dielectric material; the stacked layers...
Methods of manufacturing polyresistors with selected TCR
Various embodiments provide computer program products and computer implemented methods. In some embodiments, aspects provide for a method of manufacturing a...
Disclosed herein is a chip inductor. The chip inductor according to the present invention includes a substrate on which a through-hole is formed, a conductive...
Active matrix using hybrid integrated circuit and bipolar transistor
A hybrid integrated circuit device includes a semiconductor-on-insulator substrate having a base substrate, a semiconductor layer and a dielectric layer...
Organic electroluminescence display panel and organic electroluminescence
An organic electroluminescence (EL) display panel includes a cathode electrode formed above a bank and formed opposite to a plurality of anode electrodes, and a...
Organic light-emitting diode display with enhanced aperture ratio
An organic light-emitting diode display may have an array of pixels. Each pixel may have an organic light-emitting diode with an anode and cathode. The anodes...
Package method of substrate and package structure
The present invention provides a package method of a substrate and a package structure. The method comprises: step 1, providing the substrate (1) and a package...
Display systems and devices having array of photovoltaic material
configured to absorb and convert light into...
A display device is provided. A photovoltaic material (61) is evenly disposed in a display layer (6), so that an array formed by the photovoltaic material (61)...
Light-emitting device and display device
A technique of manufacturing a display device with high productivity is provided. In addition, a high-definition display device with high color purity is...
AMOLED display devices and methods for producing the sub-pixel structure
One embodiment of the present invention discloses an AMOLED display device and a method for producing the sub-pixels thereof. To change the metal masks used for...
Light emitting device
A light emitting device includes a substrate, a coupling unit and an organic light emitting unit. The coupling unit includes a first conductive layer, a first...
Light emitting device comprising organic light-emitting elements
electrically connected in series
The present invention relates to an organic light-emitting element comprising a first electrode, a second electrode, and an organic layer interposed between...
Systems, apparatuses and methods for converting light wavelengths
In one aspect, an apparatus for converting light having a first wavelength to a light having a second wavelength is provided. The apparatus includes an...
Metal line connection for improved RRAM reliability, semiconductor
arrangement comprising the same, and...
Some embodiments relate to an integrated circuit device including an array of memory cells disposed over a semiconductor substrate. An array of first metal...
Perpendicular MRAM with magnet
The present invention is directed to a magnetic random access memory (MRAM) comprising an MRAM die having a front side that includes therein a plurality of...
Light emitting diode chip
An LED chip for use in an LED chip array forming a continuous array of LEDs. The LED chip comprises an array of LEDs on a substrate. LEDs in a row of the array...
Light sources utilizing segmented LEDs to compensate for manufacturing
variations in the light output of...
A light source and method for making the same are disclosed. The light source includes a plurality of Segmented LEDs connected in parallel to a power bus and a...
Imaging device, electronic apparatus, and method of manufacturing the
imaging device having a reduced p-n...
An imaging device includes: a photodiode configured to perform photoelectric conversion and to generate electric charge in accordance with an amount of received...
Semiconductor image pickup device
According to one embodiment, a semiconductor image pickup device includes a pixel area and a non-pixel area. The device includes a first photoelectric...
Solid-state image capturing device and manufacturing method thereof
An aspect of the invention is a solid-state image capturing device that includes a P-type well 12, an N-type low concentration diffusion layer 18 formed in the...
Solid-state imaging device and electronic apparatus
An solid-state imaging device includes a pixel region formed on a semiconductor substrate, an effective pixel region and a shielded optical black region in the...
Monolithic visible-infrared focal plane array on silicon
A structure includes a silicon substrate; silicon readout circuitry disposed on a first portion of a top surface of the substrate and a radiation detecting...
Storage transistor with optical isolation
A storage transistor with a storage region is disposed in a semiconductor material. A gate electrode is disposed in a bottom side of an interlayer proximate to...
Light sensor having transparent substrate and through-substrate vias and a
contiguous IR suppression filter
Techniques are described to furnish an IR suppression filter that is formed on a glass substrate to a light sensor. In one or more implementations, a light...
Semiconductor package, semiconductor device manufacturing method, and
solid-state imaging device
A semiconductor package includes: a sheet-like thin plate on which a semiconductor chip is secured; and a substrate including a wiring layer, disposed on the...