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Patent # Description
US-9,472,432 Dedicated hot and cold end effectors for improved throughput
Methods, systems and apparatuses for high throughput substrate transfer are provided. According to various embodiments, the methods and systems described use...
US-9,472,431 Thin wafer shipper
An improved wafer support mechanism in a wafer container useful for carrying a plurality of axially aligned thin mostly circular wafer substrates. The container...
US-9,472,430 Substrate storage container and exposure apparatus
Provided is a reticle storage container including an inner container 10 which can store a plurality of reticles 16 and an outer container 1 which covers the...
US-9,472,429 Method for manufacturing semiconductor device
An object is to suppress discharge due to static electricity generated by peeling, when an element formation layer including a semiconductor element is peeled...
US-9,472,428 Manufacturing method of module components
A manufacturing method of electronic module components according to the present invention includes: forming a plurality of module components on a principal...
US-9,472,427 Semiconductor device and method of forming leadframe with notched fingers for stacking semiconductor die
A semiconductor device has a leadframe with first and second opposing surfaces and a plurality of notched fingers. The leadframe is mounted to a carrier. A...
US-9,472,426 Packaging substrate and method for manufacturing same
A method for manufacturing a packaging substrate includes: patterning a first photo-resisting layer having first openings on a copper foil layer to expose...
US-9,472,425 Power distribution improvement using pseudo-ESR control of an embedded passive capacitor
A fan-out wafer level package structure may include a multilayer redistribution layer (RDL). The multilayer RDL may be configured to couple with terminals of an...
US-9,472,424 Substrate processing apparatus and a method of manufacturing a semiconductor device
The temperature of a substrate is elevated rapidly while improving the temperature uniformity of the substrate. The substrate is loaded into a process chamber,...
US-9,472,423 Method for suppressing lattice defects in a semiconductor substrate
A method for suppressing the formation of leakage-promoting defects in a crystal lattice following dopant implantation in the lattice. The process provides a...
US-9,472,422 Semiconductor device structure and manufacturing methods
A method for forming a semiconductor device includes providing a semiconductor structure which has a substrate and N sub-stack structures numbered from 1 to N,...
US-9,472,420 Composition for titanium nitride hard mask and etch residue removal
Aqueous compositions for stripping titanium nitride (TiN or TiNxOy) hard mask and removing etch residue are low pH aqueous composition comprising solvent, a...
US-9,472,419 Method of patterning dopant films in high-K dielectrics in a soft mask integration scheme
A method of fabricating advanced node field effect transistors using a replacement metal gate process. The method includes dopant a high-k dielectric directly...
US-9,472,418 Method for forming a split-gate device
A method of forming a semiconductor device in an NVM region and in a logic region uses a semiconductor substrate and includes forming a gate region fill...
US-9,472,417 Plasma-free metal etch
Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials...
US-9,472,416 Methods of surface interface engineering
Methods for surface interface engineering in semiconductor fabrication are provided herein. In some embodiments, a method of processing a substrate disposed...
US-9,472,415 Directional chemical oxide etch technique
A method of forming a trench in an oxide layer; where the oxide layer is formed on top of a nitride layer. The trench is formed using an iterative etching...
US-9,472,414 Self-aligned multiple spacer patterning process
Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method...
US-9,472,413 Method for producing a pattern in an integrated circuit and corresponding integrated circuit
At least one projecting block is formed in an element. The projecting block is then covered with a first cover layer so as to form a concave ridge self-aligned...
US-9,472,412 Procedure for etch rate consistency
Methods of conditioning interior processing chamber walls of an etch chamber are described. A fluorine-containing precursor may be remotely or locally excited...
US-9,472,411 Spalling using dissolvable release layer
A method of performing spalling of a semiconductor substrate in which a release layer is used between a handling substrate and a stressor layer. The release...
US-9,472,410 Pixelated capacitance controlled ESC
Implementations described herein provide a pixilated electrostatic chuck which enables both lateral and azimuthal tuning of the RF coupling between an...
US-9,472,409 Method of forming a metal pattern and method of manufacturing a display substrate
A method of forming a metal pattern is disclosed. According to the method, a gate electrode and a pixel electrode are formed on a substrate. A metal layer is...
US-9,472,408 Nitridation on HDP oxide before high-k deposition to prevent oxygen ingress
A method of reducing a migration of oxygen into a high-k dielectric layer of a semiconducting device is disclosed. An oxide layer of the semiconducting device...
US-9,472,407 Replacement metal gate FinFET
A method for fabricating a field effect transistor device includes depositing a hardmask over a semiconductor layer depositing a metallic alloy layer over the...
US-9,472,406 Metal semiconductor alloy contact resistance improvement
Contact openings are formed into a dielectric material exposing a surface portion of a semiconductor substrate. A first transition metal liner including at...
US-9,472,405 Semiconductor power device and method for producing same
A semiconductor power device of the present invention includes a first electrode and a second electrode, a breakdown voltage holding layer that is made of a...
US-9,472,404 Doping method, doping apparatus and method of manufacturing semiconductor device
Disclosed is a plasma doping apparatus and a plasma doping method for performing a doping on a processing target substrate by implanting dopant ions into the...
US-9,472,403 Power semiconductor switch with plurality of trenches
A SiC JFET that includes a plurality of trenches formed in a SiC semiconductor body of one conductivity each trench having a region of another conductivity...
US-9,472,402 Methods and structures for protecting one area while processing another area on a chip
Increased protection of areas of a chip are provided by both a mask structure of increased robustness in regard to semiconductor manufacturing processes or...
US-9,472,401 Molybdenum disulfide film formation and transfer to a substrate
A method is provided for forming an unsupported MoS.sub.2 layer in an aqueous medium, the method comprising the steps of: providing an assembly of a Mo oxide...
US-9,472,400 Method for making epitaxial structure
The disclosure relates to a method for making an epitaxial structure. A carbon nanotube film is placed on an epitaxial growth surface of a substrate. The carbon...
US-9,472,399 Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates
Three-dimensional germanium-based semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device...
US-9,472,398 Method of manufacturing semiconductor device and substrate processing apparatus
There are provided a method of manufacturing a semiconductor device, a substrate processing apparatus, and a semiconductor device. The method allows rapid...
US-9,472,397 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes performing a cycle a predetermined number of times, the cycle including supplying a first precursor...
US-9,472,396 Plasma treated semiconductor dichalcogenide materials and devices therefrom
A plasma-based processing method includes depositing a transition metal dichalcogenide (TMDC) material onto a substrate. The TMDC material is plasma treated in...
US-9,472,395 Semiconductor arrangement including buried anodic oxide and manufacturing method
In accordance with a method of manufacturing a semiconductor arrangement, a first trench is formed into a semiconductor body from a first side. An anodic oxide...
US-9,472,394 Method of forming silicon oxide film
A method of forming a silicon oxide film includes forming a silicon film on a base, the base being a surface to be processed of an object to be processed, and...
US-9,472,393 Method and apparatus for forming silicon oxide film
A silicon oxide film forming method includes: forming an amorphous silicon film, including: adsorbing an adsorbate containing silicon to a workpiece by...
US-9,472,392 Step coverage dielectric
Silicon oxide is deposited with improved step coverage by first exposing a patterned substrate to a silicon-containing precursor and then to an ...
US-9,472,391 Semiconductor device manufacturing method
A semiconductor device manufacturing method includes forming a thin film containing silicon, oxygen, carbon and a specified Group III or Group V element on a...
US-9,472,390 Tandem time-of-flight mass spectrometry with non-uniform sampling
A method and apparatus are disclosed for parallel all-mass tandem mass spectrometry employing multi-reflecting time-of-flight analyzer for both MS stages,...
US-9,472,389 Ion source assembly for static mass spectrometer
An ion source assembly for a static mass spectrometer, comprises: a mounting element for locating the assembly within the static mass spectrometer; an ion...
US-9,472,388 Mass dependent automatic gain control for mass spectrometer
Systems and methods for automatic gain control in mass spectrometers are disclosed. An exemplary system may include a mass spectrometer, comprising a lens...
US-9,472,387 Systems and methods for identifying precursor ions from product ions using arbitrary transmission windowing
Ions are separated from a sample over time and filtered. The precursor ions produced at each step are fragmented. Resulting product ions are analyzed using a...
US-9,472,386 Chromatograph mass spectrometry data processing apparatus
Even when only mass spectra wherein the reproducibility of peak intensities is low are obtained in a mass spectrometry apparatus using, for example, a MALDI ion...
US-9,472,385 RF power supply for a mass spectrometer
The present invention provides a radio frequency (RF) power supply in a mass spectrometer. The power supply provides an RF signal to electrodes of a storage...
US-9,472,384 Electronic device manufacturing method and sputtering method
An electronic device manufacturing method includes a first step of moving a substrate holder close to a first shield member and locating a first projecting...
US-9,472,383 Copper or copper alloy target/copper alloy backing plate assembly
Provided is a copper or copper alloy target/copper alloy backing plate assembly in which the anti-eddy current characteristics and other characteristics...
US-9,472,382 Cold plasma annular array methods and apparatus
Methods and apparatus are described that use an array of two or more cold plasma jet ports oriented to converge at a treatment area. The use of an array permits...
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