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High speed solenoid
There is provided a high speed solenoid having enhanced response characteristics. The high speed solenoid includes: a movable shaft linearly movable in an axial...
High leakage transformers with tape wound cores
A high leakage inductance transformer core device, and method of forming same, that has a core made of tape wound material, at least one set of concentric...
Iron-based soft magnetic powder for dust core use, manufacturing method
thereof, and dust core
Disclosed is an iron-based soft magnetic powder for dust core use, which includes an iron-based soft magnetic matrix powder and a phosphate conversion coating...
Hollow core arrester strength membrane
The disclosed concept relates to hollow core arrester membranes generally and, in particular, to membranes that include a pultruded tube composed of fibers and...
Semiconductor ceramic composition and PTC thermistor
A semiconductor ceramic composition with small resistivity at room temperature and large temperature coefficient of resistance is provided; the composition is...
Insulator cover with securing clip for electrical distribution systems
A dielectric cover system for an insulator supporting a high voltage conductor is molded to fit over the insulator to cover at least a top portion of the...
Extremely low resistance films and methods for modifying and creating same
Operational characteristics of an extremely low resistance ("ELR") film comprised of an ELR material may be improved by depositing a modifying material onto...
Differential signal transmission cable and differential signal
transmission aggregated cable
A differential signal transmission cable is composed of a Twinax cable including twin electrically insulated wires, which are arranged side by side in contact...
Electrical cable with optical fiber
An electrical cable includes a cable jacket extending a length and having an internal passageway that extends along the length of the cable jacket. Twisted...
Cable comprising indicator material for detecting damage control
The invention relates to a cable with a sheath and an indication material that in case of damaging of the sheath at least partially escapes from the cable.
Metal sheathed cable assembly with non-linear bonding/grounding conductor
A Metal-Clad cable includes at least two conductor assemblies and a non-linear bonding/grounding conductor within a metal sheath. Each conductor assembly has an...
A composite cable having, on the inside of a sheath, a tube and a plurality of cables. When said composite cable is suspended in a hoop shape with the entire...
Provided is a wire harness having a shielding structure that can achieve a required shielding effect while sufficiently meeting the requirements of weight...
Resin compostion for wire coating and insulated wire comprising the same
A resin composition for wire coating, which is excellent in extrudability, heat deterioration resistance, abrasion resistance, flame retardancy and insulating...
Dielectric composition for low-temperature sintering, multilayer ceramic
electronic component containing the...
There are provided a dielectric composition for low-temperature sintering and a multilayer ceramic electronic component manufactured using the dielectric...
Power/fiber hybrid cable
The present disclosure relates to a hybrid cable having a jacket with a central portion positioned between left and right portions. The central portion contains...
Reflective optical components for lithographic apparatus and device
A reflective optical component is configured to reflect EUV radiation. The reflective optical component has a reflective layer with a bimetal cap layer of...
Method for precipitating one or more solutes
The invention deals with a method for precipitating at least one solute in a reactor comprising: a) a step in which a first liquid phase comprising the solute...
Method for prediction of light water reactor fuel defects using a fuel
A method to assess light water reactor fuel integrity is presented having the steps of granting access in a nuclear reactor fuel pool to at least one of a...
Coated nuclear reactor fuel particles
A method is described for producing nuclear fuel products, including the steps of receiving metallic or intermetallic uranium-based fuel particle cores,...
Machine-replaceable plasma-facing tile for fusion power reactor
An apparatus and method are disclosed for machine-replaceable plasma-facing tiles for fusion-power reactor environments. The apparatus and method involve a tile...
Semiconductor memory device and test method thereof
A semiconductor memory device includes: a normal cell region having normal cells; a redundancy cell region having first redundancy cells replaced with repair...
Malfunction control for an EEPROM type memory device
A method can be used for checking the operation of a device of electrically erasable programmable read-only memory type powered by a power supply voltage and...
Semiconductor device and its quality management method
A semiconductor device capable of easily and properly detecting a defective element unit(s) and a quality management method for the semiconductor device are...
Method of repairing a memory device and method of booting a system
including the memory device
A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region...
Configuring signal-processing systems
A configurable signal-processing circuit may provide a plurality of selectable signal-processing operations. The configurable signal-processing circuit may have...
Shift register, gate driving circuit, array substrate and display device
for eliminating the drifting...
Embodiments of the present disclosure disclose a shift register, a gate driving circuit, an array substrate and a display apparatus capable of effectively...
Redundant fuse coding
In accordance with some embodiments, fuse information may be written into a fuse array in a way that provides sufficient redundancy, making it harder for...
Dielectric-based memory cells having multi-level one-time programmable and
bi-level rewriteable operating modes...
A method of programming a memory cell is provided. The memory cell includes a memory element having a first conductive material layer, a first dielectric...
Data storage device and operating method thereof
An operating method of a data storage device includes performing a first static read fail solving operation in which the memory cell is read by applying read...
Methods and systems for mitigating memory drift
A memory cell is read by measuring a parameter associated with the memory cell with a first resolution to determine a value stored in the memory cell. The...
Dynamic read valley search in non-volatile memory
Determining dynamic read levels for memory cells is disclosed. A group of memory cells may be read at a pair of reference levels. Results of reading the group...
Semiconductor memory device
A semiconductor memory device includes a memory cell part including a main memory unit and a redundancy memory unit, a page buffer circuit including a plurality...
Semiconductor memory device including circuits with data holding
capability and bus for data transmission
A semiconductor memory device includes a sense amplifier, and the sense amplifier includes a bus, first and second latch circuits, and a third transistor. The...
Nonvolatile semiconductor memory device
A nonvolatile semiconductor memory device according to one embodiment of the present invention includes: a memory cell array and a control circuit. The control...
Semiconductor storage device
A device includes a cell array including cells. A sense node transmits logic of data stored in the cell selected by a WL and a BL. A verify read in a data...
Method for driving semiconductor device and semiconductor device
To read multilevel data from a memory cell having a transistor using silicon and a transistor using an oxide semiconductor, without switching a signal for...
Semiconductor memory device
A semiconductor memory device includes a memory unit including a first memory block and a second memory block, a power supply unit suitable for applying a...
Semiconductor memory device and method of operating the same
A semiconductor memory device includes a memory string and a peripheral circuit. The memory string has a pipe cell, a plurality of memory cells, and at least...
Semiconductor device and method of erasing the same
A semiconductor device and a method of operating the same are provided. The method includes performing a multi-plane erase operation on selected planes;...
In order to reduce a chip area of a semiconductor device having a non-volatile memory, a configuration is adopted, in which a length in a second direction of a...
Mitigating parasitic current while programming a floating gate memory
Methods to program a floating gate memory array include, in response to a request to program a second bit of the floating gate memory array, at a first time,...
Local self-boost using a plurality of cut-off cells on a single side of a
string of memory cells
Methods for local self-boost of a selected memory cell channel, memory devices, and systems are disclosed. One such method generates a cut-off channel under...
Word line repair for 3D vertical channel memory
A memory device includes a plurality of stacks of conductive strips alternating with insulating strips, including at least a bottom plane of conductive strips,...
Test partitioning for a non-volatile memory
Systems and methods are provided for testing a non-volatile memory, such as a flash memory. The non-volatile memory may be virtually partitioned into a test...
Three-dimensional flash memory system
A three-dimensional flash memory system is disclosed.
Memory device having resistance change element and method of controlling
According to one embodiment, a memory device includes a semiconductor layer connected between a first conductive line and one end of a third conductive line,...
Resistive memory device and method of operating the same
A resistive memory device includes a memory cell array that has a plurality of resistive memory cells that are arranged respectively on regions where a...
Non-volatile memory with adjustable cell bit shape
Embodiments of the present disclosure generally relate to non-volatile memory and, in particular, non-volatile memory with adjustable cell bit shapes. In one...
Vertical cross point reram forming method
Methods for forming non-volatile storage elements in a non-volatile storage system are described. In some embodiments, a plurality of forming operations may be...