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Method for producing a photovoltaic cell having a heterojunction, and
resulting photovoltaic cell
A method for producing a heterojunction solar cell including the following successive steps: providing a substrate made from crystalline semiconductor material,...
Vertical pillar structured infrared detector and fabrication method for
Photodetector devices and methods for making the photodetector devices are disclosed herein. In an embodiment, the device may include a substrate; and one or...
Three-layer core-shell nanoparticles for manufacturing solar cell light
absorption layer and method of...
Disclosed are three-layer core-shell structure nanoparticles used to form a light absorption layer of solar cells including a core including a copper...
Sensor unit and solid-state imaging device
A sensor unit includes a metallic base member, a solid-state imaging element, and amplifier chips. The base member has a first placement surface and a second...
IR sensor package including a cover member and a sensor chip recessed into
the package body
The infrared sensor includes: an infrared sensor chip in which a plurality of pixel portions each including a temperature-sensitive portion formed of a...
Fabrication of optical elements and modules incorporating the same
Fabricating a wafer-scale spacer/optics structure includes replicating optical replication elements and spacer replication sections directly onto an optics...
Solar cell and method for manufacturing the same, and solar cell module
A solar cell can include a substrate of a first conductive type; an emitter layer of a second conductive type opposite the first conductive type, and positioned...
Dielectric coating of the edge of a solar cell
A method of processing a solar cell is disclosed, where the edges of the solar cell are covered, coated or masked during the ion implantation process and/or the...
Front sheet of solar cell, method of manufacturing the same and
photovoltaic module comprising the same
A front sheet of solar cell, a method of manufacturing the same and a photovoltaic module are provided. The front sheet of solar cell can effectively block...
Electronic device comprising an optical sensor chip
An electronic device includes a substrate plate with a traversing passage. An electronic component, mounted to the substrate plate, includes an integrated...
Light sensing device having a cover with a hole for passing light and
method of selectively enabling light...
A light sensing device includes a substrate, a plurality of light sensing elements and a cover. The plurality of light sensing elements are disposed on the...
Method and apparatus for localizing and quenching an arc
The disclosure relates to a method for localizing and quenching an arc in a PV generator of a PV system, wherein the PV generator includes at least two PV...
Method of manufacturing a circuit board by punching
A method of manufacturing a circuit board includes: forming a plurality of metal electrodes so as to be separated from each other on a holding sheet by cutting...
Semiconductor device with trench structure and manufacturing method
The semiconductor device of the present invention includes a semiconductor layer made of a wide bandgap semiconductor, a trench that is selectively formed on a...
A diode is provided which includes at least one diode element which has a plurality of N-type regions and a plurality of P-type regions, the N-type regions and...
Semiconductor device including a resistor and method for the formation
A semiconductor structure includes a substrate and a resistor provided over the substrate. The resistor includes a first material layer, a second material...
Non-volatile semiconductor storage device
A non-volatile semiconductor storage device disclosed in the embodiment has a semiconductor substrate, a first insulating film, a first charge storage film, a...
Thin film transistor and display array substrate using same
A thin film transistor includes a gate electrode, a gate insulating layer, a channel layer, an etching stop layer, two contact holes, a source, and a drain. The...
Oxide semiconductor film and semiconductor device
To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by...
Thin film transistor substrate, method of manufacturing the same, and
liquid crystal display panel having the same
A thin film transistor substrate includes a substrate, a bottom gate on the substrate, a first insulating layer on the substrate and on the bottom gate, a drain...
Thin film transistor, method for manufacturing the same, and display
device comprising the same
A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film...
Thin film transistor, method of manufacturing the same, display substrate
and display apparatus
A thin film transistor is disclosed in the present invention. The thin film transistor comprises: a substrate, an active layer, a first etching barrier layer, a...
A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved....
FinFET device including a uniform silicon alloy fin
A method includes forming a fin on a semiconductor substrate and forming recesses on sidewalls of the fin. A silicon alloy material is formed in the recesses. A...
Gate and source/drain contact structures for a semiconductor device
One illustrative device disclosed herein includes, among other things, a dielectric layer disposed above a source/drain region and a gate structure of a...
Semiconductor device structures with self-aligned fin structure(s) and
fabrication methods thereof
Semiconductor device structures having fin structure(s) and fabrication methods thereof are presented. The methods include: providing a first mask above a...
Protection layer on fin of fin field effect transistor (FinFET) device
A fin field device structure and method for forming the same are provided. The FinFET device structure includes a substrate and a fin structure extending from...
FinFET having doped region and method of forming the same
A transistor includes a substrate having an upper surface, a fin structure protruding from the upper surface of the substrate, an isolation structure over the...
Device and method for fabricating thin semiconductor channel and buried
strain memorization layer
A device and method for inducing stress in a semiconductor layer includes providing a substrate having a dielectric layer formed between a first semiconductor...
High gain device
A method of forming a device is disclosed. A substrate having a high gain (HG) device region for a HG transistor is provided. A HG gate is formed on the...
Method for fabricating a field effect transistor with local isolations on
raised source/drain trench sidewalls
A method is provided for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a gate structure; and forming offset...
Semiconductor device having a lower diode region arranged below a trench
A semiconductor device includes a semiconductor body and at least one device cell integrated in the semiconductor body. Each device cell includes: a drift...
Method for manufacturing semiconductor device with tensile stress
A semiconductor device, and a method for manufacturing the same, comprises a source/drain region formed using a solid phase epitaxy (SPE) process to provide...
Field effect transistor and semiconductor device
A field effect transistor includes multi-finger electrodes, a gate terminal electrode, a drain terminal electrode, a source terminal and a source terminal...
Monolithic integrated circuit (MMIC) structure having composite etch stop
layer and method for forming such...
A method for forming a semiconductor structure having a transistor device with a control electrode for controlling a flow of carriers between a first electrode...
Breakdown voltage multiplying integration scheme
A circuit includes a first field effect transistor having a gate, a first drain-source terminal, and a second drain-source terminal; and a second field effect...
Semiconductor device, HEMT device, and method of manufacturing
Provided is a semiconductor device in which a reverse leakage current is suppressed and the mobility of a two-dimensional electron gas is high. A semiconductor...
A semiconductor device includes: metal collector layer on backside, P-type collector layer, N-type field stop layer, N-drift layer and N-type CS layer within...
A shield electrode is formed above a floating p region in a semiconductor layer and connected to a gate electrode in a trench. The shield electrode is composed...
A semiconductor device is configured such that the distance between the trench gate in the IGBT and the trench gate in the diode is reduced or a p-well layer is...
Methods for fabricating anode shorted field stop insulated gate bipolar
A method for fabricating an anode-shorted field stop insulated gate bipolar transistor (IGBT) comprises selectively forming first and second semiconductor...
Bidirectional device, bidirectional device circuit and power conversion
Provided is a longitudinal bidirectional device in which current flows in a layering direction of a semiconductor layered portion formed on a front surface of a...
The invention provides a semiconductor device, including a buried oxide layer disposed on a substrate. A semiconductor layer having a first conduction type is...
Memory structure with self-aligned floating and control gates and
A memory structure having at least substantially aligned floating and control gates. Such a memory structure can include a control gate material disposed...
Semiconductor junction formation
A semiconductor structure, such as a FinFET, etc., includes a bi-portioned junction. The bi-portioned junction includes a doped outer portion and a doped inner...
Method for fabricating FinFET with separated double gates on bulk silicon
Disclosed herein is a method for fabricating a FinFET with separated double gates on a bulk silicon, comprising: forming a pattern for a source, a drain and a...
LDMOS device with step-like drift region and fabrication method thereof
An LDMOS device is disclosed. The LDMOS device includes: a substrate having a first type of conductivity; a drift region having a second type of conductivity...
Electrode-aligned selective epitaxy method for vertical power devices
A method of forming trench electrode structures includes forming a first dielectric layer on a semiconductor substrate, forming a second layer above the first...
Resistive switching random access memory with asymmetric source and drain
The present disclosure provides one embodiment of a resistive random access memory (RRAM) structure. The RRAM structure includes a resistive memory element...
Scaling EOT by eliminating interfacial layers from high-K/metal gates of
An integrated circuit structure includes a semiconductor substrate, and a phonon-screening layer over the semiconductor substrate. Substantially no silicon...