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Patent # Description
US-9,478,636 Method of forming semiconductor device including source/drain contact having height below gate stack
Provided is a semiconductor device and methods of forming the same. The semiconductor device includes a substrate having source/drain regions and a channel...
US-9,478,635 Germanium-based quantum well devices
A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close...
US-9,478,634 Methods of forming replacement gate structures on finFET devices and the resulting devices
One illustrative method disclosed herein includes, among other things, forming a fin having an upper surface and a plurality of side surfaces, forming a...
US-9,478,633 Method and apparatus of forming ESD protection device
The present disclosure provides a semiconductor device having a transistor. The transistor includes a source region, a drain region, and a channel region that...
US-9,478,632 Method of manufacturing a semiconductor device
A method of making a semiconductor device includes epitaxially growing a channel layer over a substrate. The method further includes depositing an active layer...
US-9,478,631 Vertical-gate-all-around devices and method of fabrication thereof
Structures and methods are provided for forming bottom source/drain contact regions for nanowire devices. A nanowire is formed on a substrate. The nanowire...
US-9,478,630 Fully isolated LIGBT and methods for forming the same
A device includes a dielectric layer, and a heavily doped semiconductor layer over the dielectric layer. The heavily doped semiconductor layer is of a first...
US-9,478,629 Conductivity modulation in a silicon carbide bipolar junction transistor
In one general aspect, a silicon carbide bipolar junction transistor (BJT) can include a collector region, a base region on the collector region, and an emitter...
US-9,478,628 Metal gate forming process
A metal gate forming process includes the following steps. A first metal layer is formed on a substrate by at least a first step followed by a second step,...
US-9,478,627 Semiconductor structure and process thereof
A semiconductor structure includes a stacked metal oxide layer on a substrate, wherein the stacked metal oxide layer includes a first metal oxide layer, a...
US-9,478,626 Semiconductor device with an interconnect structure and method for forming the same
A semiconductor device structure and method for forming the semiconductor device structure are provided. The semiconductor device structure includes a substrate...
US-9,478,625 Metal resistor using FinFET-based replacement gate process
A semiconductor structure includes a semiconductor substrate, fins coupled to the substrate and surrounded at a bottom portion thereof by isolation material,...
US-9,478,624 Self-aligned wrapped-around structure
An vertical gate-all-around transistor and method of making is provided. The vertical gate-all-around transistor includes a first semiconductor structure...
US-9,478,623 Metal gate structure
A device comprises a metal gate structure in a trench and over a substrate, wherein the gate structure comprises a first metal sidewall in the trench, wherein...
US-9,478,622 Wrap-around contact for finFET
Embodiments of the present invention provide an improved contact formation process for a finFET. Epitaxial semiconductor regions are formed on the fins. A...
US-9,478,621 Semiconductor device
The element electrodes of a semiconductor element are disposed in a cell region, while an outermost peripheral electrode electrically connected to a...
US-9,478,619 Diamond semiconductor device and method for manufacturing same
The present invention provides a diamond semiconductor device which includes: a diamond substrate; a diamond step section disposed over substrate surface of the...
US-9,478,618 Semiconductor devices and methods of fabricating the same
A semiconductor device includes a fin-shaped active region protruding from a surface of a base substrate. The fin-shaped active region includes a first impurity...
US-9,478,617 Method for forming semiconductor device structure
Methods for forming a semiconductor device structure are provided. The method includes providing a substrate and forming an isolation structure in the...
US-9,478,616 Semiconductor device having high performance channel
Semiconductor devices having a high performance channel and method of fabrication thereof are disclosed. Preferably, the semiconductor devices are...
US-9,478,615 Blanket short channel roll-up implant with non-angled long channel compensating implant through patterned opening
A method that forms a structure implants a well implant into a substrate, patterns a mask on the substrate (to have at least one opening that exposes a channel...
US-9,478,614 Semiconductor device
A semiconductor device has mesa form first and second p-type base regions and a floating p-type region provided in a surface layer of an n--type drift layer....
US-9,478,613 Semiconductor system for a current sensor in a power semiconductor
A semiconductor system for a current sensor in a power semiconductor includes: on a substrate, a multiple arrangement of transistor cells having an insulated...
US-9,478,612 Thin film transistor and display device using the same
A display panel including an oxide thin film transistor is disclosed. In the oxide thin film transistor, a part of the active layer between a source region and...
US-9,478,611 Vertical nanowire semiconductor structures
An example semiconductor structure comprises a first surface and at least one nanowire, the at least one nanowire being perpendicular to the first surface,...
US-9,478,610 Transformation of nanostructure arrays
A method and apparatus for transforming vertically-aligned nanostructures into densified, horizontally-aligned arrays. A contact element such as a roller is...
US-9,478,609 Integrated circuit with multiple cells having different heights
An integrated circuit comprises a first cell having first cell height and a first line routed at a first line height and having a first line width. The...
US-9,478,608 Apparatus and methods for transceiver interface overvoltage clamping
Apparatus and methods for transceiver interface overvoltage clamping are provided. In certain configurations, an interface device includes a first p-type well...
US-9,478,607 Electronic device including an isolation structure
An electronic device can include a semiconductor layer having a primary surface, and an isolation structure. The isolation structure can include a first well...
US-9,478,606 SiC transient voltage suppressor
A high power, high current Unidirectional Transient Voltage Suppressor, formed on SiC starting material is disclosed. The device is structured to avalanche...
US-9,478,605 Semiconductor device with similar impurity concentration JTE regions
A highly reliable semiconductor device with high withstand voltage is provided. As means therefor, an impurity concentration in a first JTE region is set to...
US-9,478,604 Semiconductor device and method of manufacturing the same
A semiconductor device provided with a silicon carbide semiconductor substrate, and an ohmic metal layer joined to one surface of the silicon carbide...
US-9,478,603 Oxide semiconductor film, transistor, and semiconductor device
To provide an oxide semiconductor film which has high stability and does not easily cause variation in electric characteristics of a transistor, a transistor...
US-9,478,602 Method of forming an embedded metal-insulator-metal (MIM) capacitor
A method of manufacturing a semiconductor device comprising a capacitor structure is provided, including the steps of forming a first metallization layer...
US-9,478,601 Semiconductor device
In a semiconductor device, plate-shaped upper electrodes are formed on a lower electrode with a dielectric film interposed therebetween. The lower electrode,...
US-9,478,600 Method of forming substrate contact for semiconductor on insulator (SOI) substrate
A semiconductor structure is provided that includes a material stack including an epitaxially grown semiconductor layer on a base semiconductor layer, a...
US-9,478,599 Integrated circuit device substrates having packaged inductors thereon
An integrated circuit device includes an integrated circuit substrate having an at least two piece package thereon. The package has a sealed cavity therein and...
US-9,478,598 Organic electroluminescence display panel and organic electroluminescence display apparatus
An organic electroluminescence (EL) display panel includes an anode electrode formed above a bank and formed opposite to a plurality of cathode electrodes, and...
US-9,478,597 Semiconductor device
A display device includes a pixel portion in which a pixel is arranged in a matrix, the pixel including an inverted staggered thin film transistor having a...
US-9,478,596 Display device, display panel and manufacturing method thereof
A display device, display panel and manufacturing method thereof, where the display panel includes an array substrate including a plurality of thin film...
US-9,478,595 Double-sided display OLED array substrate, its manufacturing method, and display device
The present disclosure provides a double-sided display OLED array substrate, its manufacturing method, and a display device. The double-sided display OLED array...
US-9,478,594 Organic electroluminescence display device and method of manufacturing organic electroluminescence display device
Steps for manufacturing an organic electroluminescent display device that can form an electrode pattern with high precision include forming a first insulating...
US-9,478,593 Light-emitting module and light-emitting device
Provided is a light-emitting module from which light with uniform brightness can be extracted. Further, provided is a beautiful light-emitting module in which...
US-9,478,592 Thin film transistor array substrate
An organic light emitting diode (OLED) display device, and a method for manufacturing the OLED display device are discussed. The OLED display device according...
US-9,478,591 Organic light emitting display device and repair method thereof
An organic light emitting display device can include a substrate, two or more first electrodes positioned on the substrate and spaced apart from one another, an...
US-9,478,590 In-cell OLED touch display panel structure with metal layer for sensing
An in-cell OLED touch display panel structure with metal layer for sensing includes an upper substrate, a lower substrate parallel to the upper substrate, an...
US-9,478,589 Electronic apparatus having an oxygen ion pump
The present invention relates to an electronic apparatus which contains an electronically active material and an oxygen ion pump for removing oxygen from the...
US-9,478,587 Multi-layer circuit board for mounting multi-color LED chips into a uniform light emitter
An array structure for light emitting diodes (LEDs) uses a patterned metal layer buried beneath LED chips to electrically interconnect non-adjacent chips in...
US-9,478,586 Thin film transistor array substrate and organic light-emitting display device including the same
A thin film transistor array substrate having a pixel arrangement structure includes a first sub-pixel for displaying a first color and a second sub-pixel for...
US-9,478,585 Solid-state image pickup device and manufacturing method thereof
There is provided a solid-state image pickup device that includes a functional region provided with an organic film, and a guard ring surrounding the functional...
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