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Patent # Description
US-9,478,433 Cyclic spacer etching process with improved profile control
Embodiments described herein relate to methods for patterning a substrate. Patterning processes, such as double patterning and quadruple patterning processes,...
US-9,478,432 Silicon oxide selective removal
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a...
US-9,478,431 BARC-assisted process for planar recessing or removing of variable-height layers
The present disclosure provides a method of manufacturing an integrated circuit device in some embodiments. In the method, a semiconductor substrate is...
US-9,478,430 Method of semiconductor integrated circuit fabrication
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. The method includes providing a substrate. A first dielectric layer is deposited...
US-9,478,429 Removable templates for directed self assembly
A sacrificial-post templating method is presented for directing block copolymer (BCP) self-assembly to form nanostructures of monolayers and bilayers of...
US-9,478,428 Apparatus and methods for shielding a plasma etcher electrode
Apparatus and methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer...
US-9,478,427 Semiconductor structures having low resistance paths throughout a wafer
A semiconductor structure with low resistance conduction paths and methods of manufacture are disclosed. The method includes forming at least one low resistance...
US-9,478,426 Semiconductor device and manufacturing method thereof
A number of variations may include a method that may include depositing a first layer on a first semiconductor epi layer (epitaxial layer) in an overlying...
US-9,478,425 Fabrication of higher-k dielectrics
A method of manufacturing a semiconductor structure, and the resultant structure. The method includes forming an oxide layer above a substrate. The method...
US-9,478,424 Method for fabricating an improved GAN-based semiconductor layer
The invention relates to a post-activation method of dopants in a doped and activated GaN-base semiconductor layer, including the following successive steps:...
US-9,478,423 Method of vapor-diffusing impurities
A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes...
US-9,478,422 Methods for fabricating refined graphite-based structures and devices made therefrom
Graphite-based devices with a reduced characteristic dimension and methods for forming such devices are provided. One or more thin films are deposited onto a...
US-9,478,421 Optically tuned hardmask for multi-patterning applications
The embodiments herein provides methods for forming a PVD silicon oxide or silicon rich oxide, or PVD SiN or silicon rich SiN, or SiC or silicon rich SiC, or...
US-9,478,420 Method for depositing a group III nitride semiconductor film
A method for depositing a Group III nitride semiconductor film on a substrate is provided that comprises: providing a sapphire substrate; placing the substrate...
US-9,478,419 Sulfur-containing thin films
In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in...
US-9,478,418 Method of manufacturing semiconductor element
A method of manufacturing a semiconductor element includes a first step of epitaxially growing an AlN layer on a substrate, a second step of forming a buffer...
US-9,478,417 Method of manufacturing semiconductor device for forming film including at least two different elements
Provided is a technique of forming a film on a substrate by performing a cycle a predetermined number of times. The cycle includes: forming a first layer by...
US-9,478,416 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
In one embodiment, a semiconductor manufacturing apparatus includes a belt supporting module including a first portion that is provided around a first axis, a...
US-9,478,415 Method for forming film having low resistance and shallow junction depth
A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped...
US-9,478,414 Method for hydrophobization of surface of silicon-containing film by ALD
A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric...
US-9,478,413 Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and...
A thin film that has a predetermined composition and containing predetermined elements is formed on a substrate by performing a cycle of steps a predetermined...
US-9,478,412 Semiconductor manufacturing apparatus and method of manufacturing semiconductor device
In one embodiment, a semiconductor manufacturing apparatus includes a container configured to contain a wafer, and a supporter configured to support the wafer...
US-9,478,411 Method to tune TiO.sub.x stoichiometry using atomic layer deposited Ti film to minimize contact resistance for...
Methods of depositing and tuning deposition of sub-stoichiometric titanium oxide are provided. Methods involve depositing highly pure and conformal titanium on...
US-9,478,410 Method of forming nitride film with plasma
Disclosed is a method of forming a nitride film on a substrate to be processed ("processing target substrate") in a processing container. The method includes an...
US-9,478,409 Method for coating a workpiece
In various embodiments, a method for coating a workpiece is provided. The method may include drying a workpiece, the workpiece being coated with at least one...
US-9,478,408 Systems and methods for removing particles from a substrate processing chamber using RF plasma cycling and purging
Systems and methods for operating a substrate processing system include processing a substrate arranged on a substrate support in a processing chamber. At least...
US-9,478,407 Liquid chemical for forming protecting film
Disclosed is a liquid chemical for forming a water-repellent protecting film on a wafer. The liquid chemical is a liquid chemical containing a ...
US-9,478,406 Lighting device with fan directed airflow and air filtering
A lighting device includes a casing having an inlet that introduces external air at one side and an outlet that discharges the introduced air at the other side....
US-9,478,405 Method to perform beam-type collision-activated dissociation in the pre-existing ion injection pathway of a...
Described herein are methods and systems related to the use of the pre-existing ion injection pathway of a mass spectrometer to perform beam-type...
US-9,478,404 High resolution time-of-flight mass spectrometer
Mass spectrometers and related methods of making and using the same are disclosed herein that generally involve positioning a blocking or masking element in the...
US-9,478,403 Method and apparatus for a porous electrospray emitter
An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least...
US-9,478,402 Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
A photomultiplier tube includes a semiconductor photocathode and a photodiode. Notably, the photodiode includes a p-doped semiconductor layer, an n-doped...
US-9,478,401 Plasma source and methods for depositing thin film coatings using plasma enhanced chemical vapor deposition
The present invention provides novel plasma sources useful in the thin film coating arts and methods of using the same. More specifically, the present invention...
US-9,478,399 Multi-aperture extraction system for angled ion beam
An apparatus for creating an angled ion beam for implanting into a substrate is disclosed. The apparatus includes a plasma chamber in which plasma is created....
US-9,478,398 Plasma block for remote plasma source
Provided is plasma block for a remote plasma source, and more particularly, is a plasma block that induces plasma to be generated and to flow between a remote...
US-9,478,397 System level power delivery to a plasma processing load
The present disclosure discusses a power delivery system, and methods of operation, configured to monitor characteristics of a generator, a match network, and a...
US-9,478,396 Charged particle beam exposure apparatus
Provided is a charged particle beam exposure apparatus configured as follows. An electron beam emitted from an electron gun is deformed by an asymmetric...
US-9,478,395 Alignment and registration targets for multiple-column charged particle beam lithography and inspection
The present application discloses methods, systems and devices for using charged particle beam tools to pattern and inspect a substrate. The inventors have...
US-9,478,394 Method for increased target utilization in ion beam deposition tools
In a sputter deposition tool (100) of the type in which an ion source (101) generates a beam directed at a sputtering target, the sputtering target comprises an...
US-9,478,393 Computational scanning microscopy with improved resolution
A method of imaging a specimen comprises directing a beam to irradiate a specimen; detecting radiation emanating from the specimen; scanning the beam along a...
US-9,478,392 Charged particle beam apparatus and image generation method
There is provided a charged particle beam apparatus radiating a charged particle beam to a specimen so as to acquire an image of the specimen, the charged...
US-9,478,391 Charged particle beam writing apparatus and charged particle beam writing method
A charged particle beam writing apparatus includes plural conversion processing units to perform data conversion processing in parallel for writing data of each...
US-9,478,390 Integrated light optics and gas delivery in a charged particle lens
A method and apparatus for directing light or gas or both to a specimen positioned within about 2 mm from the lower end of a charged particle beam column. The...
US-9,478,389 Scanning electron microscope
The present invention provides a composite charged particle beam device which is provided with two or more charged particle beam columns and enables...
US-9,478,388 Switchable gas cluster and atomic ion gun, and method of surface processing using the gun
A method of processing one or more surfaces is provided, comprising: providing a switchable ion gun which is switchable between a cluster mode setting for...
US-9,478,387 Plasma processing apparatus
A plasma processing apparatus capable of optimizing a plasma process is provided. The plasma processing apparatus includes a control unit for controlling a...
US-9,478,386 Integrated gas discharge tube and preparation method therefor
Provided is an integrated gas discharge tube. In the integrated gas discharge tube, the structure of the gas discharge tube is regulated into an upper cover and...
US-9,478,385 Field emission device having field emitter including photoelectric material and method of manufacturing the same
Provided are a field emission device and a method of manufacturing the same. The field emission device includes an anode electrode and a cathode electrode which...
US-9,478,384 Electrode for producing a plasma, plasma chamber having said electrode, and method for analyzing or processing...
A RF electrode for generating, plasma in a plasma chamber comprising an optical feedthrough. A plasma chamber comprising an RF electrode and a counter-electrode...
US-9,478,383 Fast switch
The fast switch includes: a housing; a vacuum interrupter installed in the housing, connected to a main circuit, and configured to open and close the main...
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