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Patent # Description
US-9,478,332 Method for producing R-T-B sintered magnet
A method for producing a sintered R-T-B based magnet includes providing a sintered R-T-B based magnet body, of which the rare-earth-element mole fraction falls...
US-9,478,331 Hexagonal strontium ferrite magnetic powder and method of manufacturing the same, and magnetic recording medium...
An aspect of the present invention relates to a method of manufacturing hexagonal strontium ferrite magnetic powder, which comprises melting a starting material...
US-9,478,330 Control device for an electrical circuit built on a substrate of polymeric material
The present invention concerns a control device for an electrical circuit integrated on a substrate made of polymeric material, incorporating carbonaceous...
US-9,478,329 Methods of manufacturing wire, wire pre-products and wires
Exemplary methods for manufacturing a wire and resultant wires are disclosed herein. The method includes extruding a cross-linkable polymer that is...
US-9,478,328 High frequency cable, high frequency coil and method for manufacturing high frequency cable
A method for manufacturing a high frequency cable that includes covering a central conductor made from aluminum or an aluminum alloy with a covering layer made...
US-9,478,327 Durable fine wire electrical conductor suitable for extreme environment applications
Durable fine wire electrical conductors are robust, durable, small in profile, and light weight, yet capable of operating under extreme environmental...
US-9,478,326 Electroconductive microparticles, anisotropic electroconductive material, and electroconductive connection...
The present invention aims to provide electroconductive microparticles which are less likely to cause disconnection due to breakage of connection interfaces...
US-9,478,325 Discharge surface treatment method and coating block for discharge surface treatments
Employing a compact molded from powder of metal or the like as an electrode 11, generating pulsed discharges between the electrode 11 and a treating portion Wa...
US-9,478,324 Systems and methods for producing biochar-based products
An end-to-end system/process for producing advantageous end products from a raw biomass feedstock is provided. The process includes steps for enhancing...
US-9,478,323 Cu--Si--Co-based copper alloy for electronic materials and method for producing the same
A Cu--Si--Co-based alloy having an enhanced spring limit is provided. The copper alloy comprises 0.5-2.5 mass % of Co, 0.1-0.7 mass % of Si, the balance Cu and...
US-9,478,322 Storage and transportation method for low level radioactive mixed wastes
A method for preparing low level radioactive hazardous wastes (LLHZ) for disposal in a landfill. The method includes providing a softsided transportable...
US-9,478,321 Method for filling water into a main circuit of a nuclear reactor, and connection device for implementing said...
The method for filling water into and changing the air of a main circuit of a water-cooled nuclear reactor includes a step of placing a connection and fluid...
US-9,478,320 Method for in-core instrumentation withdrawal from the core of a pressurized water reactor
A method of removing the upper internals assembly from a nuclear reactor pressure vessel for refueling that simultaneously disconnects two or more of the...
US-9,478,319 Method of operating a power generator based on noble metal induced oxidation of a heat transfer surface
A method of operating a power generator is provided. The method includes determining an amount of oxides on a heat transfer surface of the power generator as a...
US-9,478,318 Water-spray residual heat removal system for nuclear power plant
A residual heat removal system for a nuclear power plant. The residual heat removal system for a nuclear power plant may include an air duct provided on an...
US-9,478,317 Pressurizer surge-line separator for integral pressurized water reactors
An integral pressurized light water reactor having most of the components of a primary side of a pressurized water reactor nuclear steam supply system housed in...
US-9,478,316 Memory device
A memory device may include a plurality of normal word lines; a plurality of redundancy word lines capable of replacing the word lines; a hammering information...
US-9,478,315 Bit error rate mapping in a memory system
A memory system or flash memory device may include identify a bit error rate (BER) mapping for the memory. The BER mapping may be used for identifying erroneous...
US-9,478,314 Memory utilizing bundle-level status values and bundle status circuits
An integrated circuit memory includes a memory array, including a plurality of data lines. A buffer structure is coupled to the plurality of data lines,...
US-9,478,313 Fast semantic processor for Per-pin APG
System and method for implementing a memory test language compiler. The compiler includes a fast semantic processor for interpreting programming patterns in a...
US-9,478,312 Address circuit
Described herein are techniques, systems, and circuits for addressing image data according to blocks. For example, in some cases, the address space may be...
US-9,478,311 Shift register units, gate driver circuits and display devices
The present disclosure provides a bi-directional scanning gate driver and its shift register unit. The shift register unit comprises a shift trigger...
US-9,478,310 Shift register unit, gate driving circuit and method, display apparatus
Provided is a shift register unit, a gate driving circuit and method, and a display apparatus. The shift register unit comprises an input module, a pulling-up...
US-9,478,309 Magnetic-domain-wall-displacement memory cell and initializing method therefor
Provided is a magnetic domain wall displacement memory cell, including a recording layer including a magnetic film, the recording layer including: a...
US-9,478,308 Programmable memory device sense amplifier
Embodiments include circuits, apparatuses, and systems for programmable memory device sense amplifiers. In embodiments, an electronic circuit may include a...
US-9,478,307 Memory device, writing method, and reading method
A memory device includes a memory cell which has one cell selection section and a storage section which is connected in series with respect to the cell...
US-9,478,306 Circuit and system of using junction diode as program selector for one-time programmable devices with heat sink
Junction diodes fabricated in standard CMOS logic processes can be used as program selectors with at least one heat sink or heater to assist programming for...
US-9,478,305 Methods and apparatus to program multi-level cell memory using target-only verify
A disclosed example includes selectively precharging first bitlines of first multi-level cell (MLC) memory cells of a wordline without precharging second...
US-9,478,304 Semiconductor memory device and operating method thereof
A method of operating a semiconductor memory device includes performing a first program operation to simultaneously increase threshold voltages of memory cells...
US-9,478,303 System and method for measuring data retention in a non-volatile memory
A non-volatile memory system may include a mechanism for analyzing and measuring/predicting data loss without reading data in memory cells of the non-volatile...
US-9,478,302 Nonvolatile memory device and method for sensing the same
A nonvolatile memory device includes a first resistive memory cell connected to a first word line, a second resistive memory cell connected to a second word...
US-9,478,301 Semiconductor memory device
A semiconductor memory device according to an embodiment includes a control circuit, during data write to a memory cell, sequentially executing: an erasing...
US-9,478,300 Operation method of nonvolatile memory system
An operation method of a nonvolatile memory system in accordance with example embodiments of inventive concepts includes detecting an on-cell count of the...
US-9,478,299 Memory device and read method of memory device
In a method of reading a memory device, difference information is generated based on a distance difference between a position of a read word-line and a position...
US-9,478,298 Memory system and method of reading data thereof
A method of reading data in a memory system including a non-volatile memory device, includes reading first data stored in a first block using a first read...
US-9,478,297 Multiple-time programmable memory
A multiple-time programmable (MTP) structure is provided that can operate using a power supply with a supply voltage of 1.5 V to 5.5 V. When the supply voltage...
US-9,478,296 Erase method of nonvolatile memory device and storage device employing the same
A method of erasing a nonvolatile memory device which includes a plurality of memory blocks includes receiving an erase command; erasing a selected memory block...
US-9,478,295 Non-volatile memory device and related method of operation
A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value...
US-9,478,294 Dummy memory erase or program method protected against detection
In a general aspect, a method of writing data in a nonvolatile memory can include performing a first erase or program cycle to write regular data in a first...
US-9,478,293 Memory system and controller
A memory system includes a semiconductor memory device and a controller. The semiconductor memory device performs a writing operation with either a first...
US-9,478,292 Read operation for a non-volatile memory
Apparatuses, systems, and methods are disclosed for a read operation for a non-volatile memory. A method includes determining whether one or more non-volatile...
US-9,478,291 Non-volatile memory device having vertical structure and method of operating the same
A non-volatile memory device having a vertical structure includes a NAND string having a vertical structure. The NAND string includes a plurality of memory...
US-9,478,290 Memory device and memory system including the same
A memory device is provided as follows. A memory cell array includes strings including first and second strings. Each string includes a ground selection...
US-9,478,289 Semiconductor memory device and operating method thereof
A semiconductor memory device includes a column address generation circuit suitable for generating contents addressable memory (CAM) column addresses for...
US-9,478,288 Method for programming memory device and associated memory device
A method for programming a memory device comprises the following steps: performing an interleaving programming, including: programming a first memory cell...
US-9,478,287 Circuits and methods for detecting write operation in resistive random access memory (RRAM) cells
Circuits and methods for detecting write operation and limiting cell current in resistive random access memory (RRAM or ReRAM) cells are provided. RRAM cells...
US-9,478,286 Transient current-protected threshold switching devices systems and methods
Threshold switching devices demonstrating transient current protection through both insulation and repair current mechanisms, including associated systems and...
US-9,478,285 Cross-point memory device including multi-level cells and operating method thereof
A method of operating a cross-point memory device, having an array of multilevel cells, includes performing a first reading operation with respect to the...
US-9,478,284 Semiconductor storage device
An object of this invention is to provide a semiconductor memory device capable of increasing the read transfer rate by performing the read operation in...
US-9,478,283 Nonvolatile semiconductor storage device having improved reading and writing speed characteristics
A nonvolatile semiconductor memory device includes: a memory cell (MC0) including a cell transistor (TC0) and a variable resistance element (RR0); a memory cell...
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