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Patent # Description
US-9,496,442 Solar modules including spectral concentrators and related manufacturing methods
Described herein are solar modules including spectral concentrators and related manufacturing methods.
US-9,496,441 Solar cell module support assembly
Disclosed herein is a solar cell module support assembly including a solar cell module and a frame supporting the solar cell module, a drive motor and a power...
US-9,496,440 Solar cell module
A solar cell module includes a plurality of solar cells each comprising a substrate, an emitter region placed at the substrate, an anti-reflection region placed...
US-9,496,439 Polyester film, back sheet for solar cell, and solar cell module
The invention provides a polyester film including: a polyester substrate; and a layered portion that is disposed on at least one surface of the polyester...
US-9,496,438 Sheet for a photovoltaic cell
A sheet for a photovoltaic cell is provided. The sheet for a photovoltaic cell has excellent heat resistance, lightfastness, weather resistance, moisture...
US-9,496,437 Solar cell having a plurality of sub-cells coupled by a metallization structure
Solar cells having a plurality of sub-cells coupled by metallization structures, and singulation approaches to forming solar cells having a plurality of...
US-9,496,436 Foldable solar power receiver
An apparatus for the purpose of power generation by collecting or reflecting light using a foldable surface for compact transport, comprising of a circular...
US-9,496,435 Microstructure enhanced absorption photosensitive devices
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures arc described. The microstructures, such as pillars and/or...
US-9,496,434 Solar cell and method for producing solar cell
A solar cell that includes a negative electrode made of Al--Nd or the like formed on a substrate, an electron transport layer made of n-type Si or the like, a...
US-9,496,433 Photoelectric conversion device and method for manufacturing photoelectric conversion device
The inventive photoelectric conversion device includes a substrate, a lower electrode layer provided on the substrate, a CIGS compound semiconductor layer...
US-9,496,432 Method for forming metal silicide layers
The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal...
US-9,496,431 Coplanar integration of a direct-bandgap chip into a silicon photonic device
A method for fabricating a composite device comprises providing a platform, providing a chip, and bonding the chip to the platform. The platform has a base...
US-9,496,430 Method for forming patterns of differently doped regions
The disclosed technology generally relates to forming patterns of doped semiconductor regions, and more particularly to methods of forming such patterns in...
US-9,496,429 System and method for tin plating metal electrodes
Systems and methods for fabricating a photovoltaic structure are provided. During fabrication, a patterned mask is formed on a first surface of a multilayer...
US-9,496,428 Photoelectric conversion device and manufacturing method thereof
A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity...
US-9,496,427 Module fabrication of solar cells with low resistivity electrodes
One embodiment of the present invention provides a solar module. The solar module includes a front-side cover, a back-side cover, and a plurality of solar cells...
US-9,496,426 Thin film photovoltaic devices with a minimally conductive buffer layer
A thin film photovoltaic device (100) with a tunable, minimally conductive buffer (128) layer is provided. The photovoltaic device (100) may include a back...
US-9,496,425 Back-illuminated sensor with boron layer
An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor...
US-9,496,424 Crystalline solar cell, method for producing said type of solar cell and method for producing a solar cell module
A crystalline solar cell is provided that includes a front-sided n-doped area and a rear-sided p-doped area, a front-sided contact, a rear-sided contact and at...
US-9,496,423 Light converter
A light converter for the photovoltaic conversion of light, having a support, a first semiconductor body, and a second semiconductor body. A first surface and a...
US-9,496,422 Multi-element packaging of concentrator photovoltaic cells
A photovoltaic structure includes, from bottom to top, a conductive substrate, at least one electrical isolation layer, and a patterned conductive material...
US-9,496,421 Solderable top metal for silicon carbide semiconductor devices
A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one...
US-9,496,420 Molybdenum barrier metal for SiC Schottky diode and process of manufacture
A method for fabricating a diode is disclosed. In one embodiment, the method includes forming a Schottky contact on an epitaxial layer of silicon carbide (SiC)...
US-9,496,419 Ruthenium nucleation layer for control gate electrodes in a memory structure
A memory film and a semiconductor channel can be formed within each memory opening that extends through a stack including an alternating plurality of insulator...
US-9,496,418 Non-volatile memory and fabricating method thereof
A non-volatile memory including the following elements is provided. A first conductive layer and a second conductive layer are disposed on a substrate and...
US-9,496,417 Non-volatile memory cell
A non-volatile memory cell includes a tunneling part; a coupling device; a read transistor; a first select transistor connected to the read transistor forming a...
US-9,496,416 Semiconductor device and method for manufacturing the same
An object is to manufacture a semiconductor device with high reliability by providing the semiconductor device including an oxide semiconductor with stable...
US-9,496,415 Structure and process for overturned thin film device with self-aligned gate and S/D contacts
Processes and overturned thin film device structures generally include a metal gate having a concave shape defined by three faces. The processes generally...
US-9,496,414 Semiconductor device and method for manufacturing the same
It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor...
US-9,496,413 Semiconductor device
Reducing hydrogen concentration in a channel formation region of an oxide semiconductor is important in stabilizing threshold voltage of a transistor including...
US-9,496,412 Semiconductor device, manufacturing method thereof, and display device including the semiconductor device
The transistor includes a gate electrode, a gate insulating film over the gate electrode, an oxide semiconductor film over the gate insulating film, a source...
US-9,496,411 Manufacturing method of semiconductor device
A method for manufacturing a semiconductor device includes the steps of forming a first insulating film over a first gate electrode over a substrate while...
US-9,496,410 Electronic device, manufacturing method of electronic device, and sputtering target
A film formation is performed using a target in which a material which is volatilized more easily than gallium when heated at 400.degree. C. to 700.degree. C.,...
US-9,496,409 Semiconductor device and method for manufacturing the same
A first source electrode is formed in contact with a semiconductor layer; a first drain electrode is formed in contact with the semiconductor layer; a second...
US-9,496,408 Semiconductor device including oxide semiconductor stack with different ratio of indium and gallium
A highly reliable semiconductor device including an oxide semiconductor is provided by preventing a change in its electrical characteristics. A semiconductor...
US-9,496,406 Semiconductor device and method for manufacturing the same
An embodiment is to include an inverted staggered (bottom gate structure) thin film transistor in which an oxide semiconductor film containing In, Ga, and Zn is...
US-9,496,405 Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
An object of an embodiment of the present invention is to provide a semiconductor device including a normally-off oxide semiconductor element whose...
US-9,496,404 Semiconductor device and manufacturing method thereof
An object of the present invention to provide a highly reliable semiconductor device. Another object is to provide a manufacturing method of a highly reliable...
US-9,496,403 Semiconductor device and method of manufacturing the same
A circuit including an inverter is provided for a wiring layer. A semiconductor device is provided with a wiring layer circuit which is formed over an...
US-9,496,402 Metal gate with silicon sidewall spacers
A method includes forming an opening in a dielectric to reveal a protruding semiconductor fin, forming a gate dielectric on sidewalls and a top surface of the...
US-9,496,401 III-V device structure with multiple threshold voltage
A semiconductor structure containing a multiple threshold voltage III-V device is provided. The III-V device includes a III-V compound semiconductor core...
US-9,496,400 FinFET with stacked faceted S/D epitaxy for improved contact resistance
A semiconductor structure including a multi-faceted epitaxial semiconductor structure within both a source region and a drain region and on exposed surfaces of...
US-9,496,399 FinFET devices with multiple channel lengths
A method including patterning a continuous fin having a first segment and a second segment in a semiconductor layer, the first segment is arranged at an angle...
US-9,496,398 Epitaxial source/drain regions in FinFETs and methods for forming the same
An embodiment is a structure including a substrate having a fin and an isolation region adjoining the fin, and a raised epitaxial source/drain region on the...
US-9,496,397 FinFet device with channel epitaxial region
The present disclosure relates to a Fin field effect transistor (FinFET) device having epitaxial enhancement structures, and an associated method of...
US-9,496,396 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: (a) providing a substrate; (b) forming a gate structure on the...
US-9,496,395 Semiconductor device having a strain feature in a gate spacer and methods of manufacture thereof
A device may include a substrate having a channel region therein, the channel region having a first lattice constant; a gate stack formed over the channel...
US-9,496,394 Semiconductor structures with field effect transistor(s) having low-resistance source/drain contact(s)
Disclosed are semiconductor structures comprising a field effect transistor (FET) having a low-resistance source/drain contact and, optionally, low...
US-9,496,393 Semiconductor device
A semiconductor device includes a semiconductor layer made of first conductivity type semiconductor layer; a second conductivity type well region formed on the...
US-9,496,392 Integrated vacuum microelectronic structure and manufacturing method thereof
An integrated vacuum microelectronic structure is described as having a highly doped semiconductor substrate, a first insulating layer placed above said doped...
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