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Patent # Description
US-9,496,341 Silicon germanium fin
A method includes forming a multilayered stack on a surface of a supporting layer. The multilayered stack is composed of alternating layers of compressively...
US-9,496,340 Semiconductor device, antenna switch circuit, and radio communication apparatus
A semiconductor device includes: a laminated body including a channel layer that is configured of a compound semiconductor; and at least one gate electrode that...
US-9,496,339 Semiconductor device comprising trench structures
A semiconductor device includes a central portion and an edge termination portion outside the central portion. The central portion includes a transistor cell...
US-9,496,338 Wire-last gate-all-around nanowire FET
A nanowire field effect transistor (FET) device includes a first source/drain region and a second source/drain region. Each of the first and second source/drain...
US-9,496,337 Method for producing a semiconductor device having a beveled edge termination
A method for producing a semiconductor device includes forming a trench that defines a closed loop in a semiconductor body and extends from a first surface into...
US-9,496,336 Semiconductor device having vertical channels and method of manufacturing the same
A method of manufacturing a semiconductor device which can prevent leakage current caused by gate electrodes intersecting element isolation layers in a major...
US-9,496,335 Super junction semiconductor device and method for manufacturing the same
There is provided a super junction semiconductor device and a method of manufacturing the same. A super junction semiconductor device includes an n-type...
US-9,496,334 Semiconductor device
A semiconductor device according to an embodiment includes a first semiconductor layer of a first conductivity type, second semiconductor regions of a second...
US-9,496,333 Resurf high voltage diode
A trench-isolated RESURF diode structure (100) is provided which includes a substrate (150) in which is formed anode (130, 132) and cathode (131) contact...
US-9,496,332 Semiconductor device
According to one embodiment, a semiconductor device comprises a first semiconductor region of a first conductivity type, a second semiconductor region of a...
US-9,496,331 Semiconductor device having vertical MOSFET with super junction structure, and method for manufacturing the same
A method for manufacturing a semiconductor device includes: preparing a semiconductor substrate, in which a first semiconductor layer is formed on a substrate;...
US-9,496,330 Oxide semiconductor film and semiconductor device
A crystalline oxide semiconductor film which can be used as a semiconductor film of a transistor or the like is provided. In particular, a crystalline oxide...
US-9,496,329 DT capacitor with silicide outer electrode and/or compressive stress layer, and related methods
A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a...
US-9,496,328 Methods of manufacturing capacitors for semiconductor devices
A method of manufacturing a capacitor for a semiconductor device includes forming a lower electrode, forming a dielectric layer on the lower electrode, forming...
US-9,496,327 High precision capacitor dielectric
A process of forming an integrated circuit forms a high precision capacitor bottom plate with a metallic surface and performs a plasma treatment of the metallic...
US-9,496,326 High-density integrated circuit via capacitor
A capacitor can be fabricated within an integrated circuit (IC) by creating, in a top surface of a dielectric layer of the IC, a recess having at least one side...
US-9,496,325 Substrate resistor and method of making same
A semiconductor structure includes a resistor on a substrate formed substantially simultaneously with other device elements, such as one or more transistors. A...
US-9,496,324 Display device, method for driving the same, and electronic apparatus
A display device including a pixel array unit having a matrix of pixels each configured such that an anode electrode of an organic electroluminescent element is...
US-9,496,323 Organic light emitting diode display, manufacturing method thereof, and rotating device for circuit film
A manufacturing method of an organic light emitting diode (OLED) display includes: supplying a circuit film on the pad area of the display panel and bonding a...
US-9,496,322 COA WOLED structure and manufacturing method thereof
The present invention provides a COA WOLED structure and a manufacturing method thereof. The structure includes red/green/blue sub pixel zones and each sub...
US-9,496,321 Organic light emitting display and method of manufacturing the same
An organic light emitting display and a method of manufacturing the same that reduces the number of the masks needed and improves production yield by forming...
US-9,496,320 Organic light-emitting display apparatus
An organic light-emitting display apparatus includes a first substrate, a display unit that defines an active area on the first substrate, a second substrate on...
US-9,496,319 Pixel circuit and display apparatus including the same
A display apparatus including: a display unit including a plurality of pixels, each of the plurality of pixels including: a light-emitting circuit including a...
US-9,496,318 Electroluminescent device including boss layer and its manufacture method
An electroluminescent device and its manufacture method are disclosed. The electroluminescent device comprises a color film substrate (20) comprising a...
US-9,496,317 Method of manufacturing organic light emitting display apparatus
A method of manufacturing an organic light emitting display apparatus by utilizing a deposition apparatus for forming an organic layer on a substrate includes:...
US-9,496,315 Top-gate bottom-contact organic transistor
Top-gate, bottom-contact organic thin film transistors are provided. The transistors may include metal bilayer electrodes to aid in charge movement within the...
US-9,496,314 Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for...
Shared source line magnetic tunnel junction (MTJ) bit cells employing uniform MTJ connection patterns for reduced area are disclosed. In one aspect, a two (2)...
US-9,496,313 CMOS-based thermopile with reduced thermal conductance
An integrated circuit containing CMOS transistors and an embedded thermoelectric device is formed by forming isolation trenches in a substrate, concurrently...
US-9,496,312 Active pixel structure with improved charge transfer
The invention relates to an active CMOS pixel structure comprising: at least one photoelectric conversion zone (NPD) defined by n-doping of the substrate, said...
US-9,496,311 Solid-state imaging device, method of manufacturing the same, and electronic apparatus
A solid-state imaging device includes two-dimensionally arranged pixels, and each pixel includes a photoelectric conversion element configured to generate...
US-9,496,310 Photodetector, method of manufacturing photodetector, radiation detector, and radiation detection apparatus
A photodetector according to an embodiment includes: a semiconductor substrate with a first and second faces; a groove formed on the second face; pixels...
US-9,496,309 Image sensor device
An image sensor device with layered structures is disclosed, which includes a carrier wafer, image sensing structures and insulating layers. The carrier wafer...
US-9,496,308 Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device...
US-9,496,307 Solid-state imaging device, manufacturing method thereof, and electronic apparatus
Disclosed herein is a solid-state imaging device including: a laminated semiconductor chip configured to be obtained by bonding two or more semiconductor chip...
US-9,496,306 Solid-state imaging device, method for manufacturing the same, and imaging apparatus
Realization of an adequate hole accumulation layer and reduction in dark current are allowed to become mutually compatible. A solid-state imaging device 1...
US-9,496,304 Image sensor pixel cell with switched deep trench isolation structure
A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion...
US-9,496,303 Solid state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus
The present technique aims to provide a solid-state imaging device that reduces shading and color mixing between pixels. The present invention also provides a...
US-9,496,302 Crosstalk improvement through P on N structure for image sensor
The present disclosure provides an image sensor semiconductor device. The semiconductor device includes a semiconductor substrate having a first type of dopant;...
US-9,496,301 Imaging apparatus and electronic system
An imaging apparatus includes: a lens group formed of one or more lens elements; and an imaging device having a light receiving surface on which the lens group...
US-9,496,300 Imaging device having array of spectroscopic sections wherein an interval between two spectroscopic sections at...
The imaging device disclosed herein includes: a plurality of photodetection sections having a light-receiving face, the plurality of photodetection sections...
US-9,496,299 Layout for routing common signals to integrating imaging pixels
An imager is provided that includes an integrated circuit. The integrated circuit includes at least one metal layer, a signal line extending in a first...
US-9,496,298 Photodiode array module and method for manufacturing same
A first semiconductor substrate 1 and a second semiconductor substrate 2 are different in material, and therefore have sensitivities to incident light of...
US-9,496,297 Sensor package with cooling feature and method of making same
A sensor device includes a first substrate of semiconductor material having opposing first and second surfaces, photodetectors configured to receive light...
US-9,496,296 Optically-tuned electronic components
The present disclosure is directed to optically-tuned electronic components including one or more layers of photosensitive semiconductive materials. In some...
US-9,496,295 Liquid crystal display and manufacturing method thereof
A method of manufacturing a liquid crystal display includes: forming a sacrificial layer by stacking a non-photosensitive resin; initiating formation of an etch...
US-9,496,294 Array substrate, manufacturing method and display device
A method for manufacturing an array substrate comprising: using a mask plate (4), and controlling exposure energy to obtain a first exposure feature size, so as...
US-9,496,293 Pixel circuit and method for driving the same, display panel and display apparatus
A pixel circuit and a method for driving the same, a display panel and a display apparatus are configured to improve the lifespan of the pixel circuit. The...
US-9,496,292 Display device and manufacturing method for same
The present invention provides a display device having: gate electrodes formed on a transparent substrate; a gate insulating film for covering the gate...
US-9,496,291 Pulse output circuit, shift register and display device
A pulse is inputted to TFTs 101 and 104 so that the TFTs would turn ON and then potential of a node .alpha. rises. When the potential of the node .alpha....
US-9,496,290 Display substrate, display device and method for manufacturing display substrate
The present disclosure relates to a display substrate, a display device and a method for manufacturing the display substrate. The display substrate comprises a...
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