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Complementary high mobility nanowire neuron device
A method for forming a semiconductor device includes providing a substrate structure, which includes a nanowire structure supported by two isolation regions on...
Non-volatile memory unit and method for manufacturing the same
A non-volatile memory unit includes a substrate, a first dielectric layer, an erase gate, a floating gate, a second dielectric layer, a coupled dielectric layer...
Non-volatile floating gate memory cells
A storage transistor for non-volatile memory can be fabricated to create controlled sharp polycrystalline silicon (polysilicon) edges. The edges concentrate the...
Semiconductor device and method for manufacturing the same
A highly reliable semiconductor device exhibiting stable electrical characteristics is provided. Further, a highly reliable semiconductor device is provided....
Thin film transistor substrate
A thin film transistor substrate includes a gate electrode disposed on a substrate; a semiconductor layer disposed on the substrate that partially overlaps the...
Oxide thin film transistor, display device, and method for manufacturing
Provided are oxide thin-film transistor and display device employing the same, and method for manufacturing an oxide thin-film transistor array substrate. A...
Thin film transistor and method for manufacturing the same, array
substrate, display device
There are provided a thin film transistor and a manufacturing method thereof, an array substrate and a display device. The thin film transistor is formed on a...
Oxide thin film transistor array substrate having transparent connection
structure connecting source electrode...
An oxide thin film transistor array substrate, a manufacturing method thereof and a display panel are provided. The oxide TFT array substrate includes a base...
Thin film transistor and manufacturing method thereof
A thin film transistor includes: a first semiconductor layer; a second semiconductor layer disposed on the first semiconductor layer; and a pair of source...
Pixel structure and method of manufacturing a pixel structure
A pixel structure and a method of manufacturing a pixel structure are provided. The pixel structure includes an active device, a gate insulation layer, a...
Bottom-gate transistor including an oxide semiconductor layer contacting
an oxygen-rich insulating layer
A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In a semiconductor device including a...
Thin film layer and manufacturing method thereof, substrate for display
and liquid crystal display
A thin film layer and manufacturing method thereof, a substrate for display and a liquid crystal display are provided. The embodiments according to the present...
Thin film transistor and manufacturing method thereof, an array substrate
and a display device
Embodiments of the present invention provide a thin film transistor and its manufacturing method, an array substrate and a display device, to improve the...
FinFET structure and manufacture method
A method for forming a FinFET transistor structure includes providing a substrate with a buried oxide layer and a layer of first semiconductor material. One or...
Non-planar quantum well device having interfacial layer and method of
Techniques are disclosed for forming a non-planar quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V...
Semiconductor fin structure with extending gate structure
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a fin structure formed over the...
Method for producing a field effect transistor including forming a gate
after forming the source and drain
The invention concerns a method for producing a transistor. The gate of the transistor is produced after having produced source and drain electrodes of the...
Channel strain control for nonplanar compound semiconductor devices
A circuit device having differently-strained NMOS and PMOS FinFETs is provided. In an exemplary embodiment, a semiconductor device includes a substrate with a...
Fully depleted device with buried insulating layer in channel region
A semiconductor device includes an active region formed in a semiconductor substrate, a gate structure disposed over the active region, source/drain regions...
Semiconductor device having embedded strain-inducing pattern and method of
forming the same
In a semiconductor device, a first active region has a first .SIGMA.-shape, and the second active region has a second .SIGMA.-shape. When a line that is...
Fin field effect transistor including self-aligned raised active regions
Fin mask structures are formed over a semiconductor material portion on a crystalline insulator layer. A disposable gate structure and a gate spacer are formed...
Semiconductor devices and methods of forming the same
An embodiment is a semiconductor device, comprising: a substrate; a plurality of fin structures disposed on the substrate; a plurality of first strained...
Semiconductor device and method of manufacturing the same
Provided are a semiconductor device and a method of manufacturing the same. An example device may include: a substrate having a well formed therein, the well...
Dislocation stress memorization technique (DSMT) on epitaxial channel
The present disclosure relates to method of forming a transistor device having epitaxial source and drain regions with dislocation stress memorization (DSM)...
Local strain generation in an SOI substrate
Method to strain a channel zone of a transistor of the semiconductor on insulator type transistor that makes use of an SMT stress memorization technique in...
LDMOS for high frequency power amplifiers
An LDMOSFET is designed with dual modes. At the high voltage mode, it supports a high breakdown voltage and is biased at a high voltage to get the benefits of...
Integrated fabrication of semiconductor devices
In a method for manufacturing a semiconductor device, a substrate including a gate structure is provided. A source region and a drain region are formed at...
Semiconductor device and fabricating method thereof
A semiconductor device and a fabricating method thereof are provided. The semiconductor device includes: a substrate comprising a trench; a first electrode...
High frequency switching MOSFETs with low output capacitance using a
Aspects of the present disclosure describe a high density trench-based power MOSFETs with self-aligned source contacts and methods for making such devices. The...
Semiconductor device and method for manufacturing the same
In a cell region of a first major surface of a semiconductor substrate of a first conductivity type, a first well of a second conductivity type is in an upper...
Silicon carbide semiconductor device
There is provided a silicon carbide semiconductor device having an improved switching characteristic. A MOSFET includes a silicon carbide layer, a gate...
Nitride semiconductor transistor device
A semiconductor device includes a first semiconductor layer, a second semiconductor layer formed over the first semiconductor layer, a gate insulating film...
High electron mobility semiconductor device and method therefor
In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate...
Nitride semiconductor device
A nitride semiconductor device includes the followings. A semiconductor multilayer structure is above a substrate and includes a first nitride semiconductor...
A semiconductor device includes a substrate, an active layer, a source electrode, a drain electrode, a gate electrode, a field plate, a first passivation layer,...
Charge reservoir IGBT top structure
An IGBT device may be formed from a substrate including a bottom semiconductor layer of a first conductivity and an upper semiconductor layer of a second...
Semiconductor device and semiconductor device manufacturing method
A semiconductor device and manufacturing method achieve miniaturization, prevent rise in threshold voltage and on-state voltage, and prevent decrease in...
Field effect semiconductor device
In order to reduce the source resistance in a field effect semiconductor device, an electron injection layer, which causes a band-to-band tunnel current to flow...
Method and system for planar regrowth in GaN electronic devices
A vertical JFET includes a III-nitride substrate and a III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The first...
Method of manufacturing for memory transistor with multiple charge storing
layers and a high work function gate...
Methods of fabricating a memory device are described. Generally, the method begins with forming a tunnel dielectric layer over a channel region formed from a...
FinFET transistor with fin back biasing
A FinFET having fin back biasing and methods of forming the same are disclosed. The FinFET includes a substrate and a fin over the substrate. The fin includes a...
Forming fins on the sidewalls of a sacrificial fin to form a FinFET
A fin structure for a fin field effect transistor (FinFET) device is provided. The device includes a substrate, a first semiconductor material disposed on the...
Uniform height tall fins with varying silicon germanium concentrations
A method of making a semiconductor device includes forming a first fin in a first semiconducting material layer disposed over a substrate, the first...
FINFET device having a channel defined in a diamond-like shape
The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the...
Structure and formation method of fin-like field effect transistor
A structure and a formation method of a semiconductor device are provided. The semiconductor device includes a semiconductor substrate and a fin structure over...
Method of selectively removing a region formed of silicon oxide and plasma
Provided is a method of selectively removing a first region from a workpiece which includes the first region formed of silicon oxide and a second region formed...
Manufacturing method of thin film transistor display panel
Provided is a manufacturing method of a thin film transistor array panel including: formation of a gate line including a gate electrode on a substrate;...
Semiconductor structure and etch technique for monolithic integration of
Semiconductor structures are disclosed for monolithically integrating multiple III-N transistors with different threshold voltages on a common substrate. A...
Preparation method for power diode
A preparation method for a power diode, comprising: providing a substrate (10), the substrate (10) having a front surface and a back surface opposite to the...
Silicon recess etch and epitaxial deposit for shallow trench isolation
Some embodiments of the present disclosure relate to a method. In this method, a semiconductor substrate, which has an active region disposed in the...