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Patent # Description
US-9,502,280 Two-step shallow trench isolation (STI) process
Methods of making an integrated circuit are disclosed. An embodiment method includes etching a trench in a silicon substrate, depositing a first layer of...
US-9,502,279 Installation fixture having a micro-grooved non-stick surface
An apparatus and method adapted to mount an elastomer band in a mounting groove around a semiconductor substrate support used for supporting a semiconductor...
US-9,502,278 Substrate holder assembly for controlled layer transfer
A substrate holder assembly for use in a controlled spalling process is provided. The substrate holder assembly includes a base structure having a surface in...
US-9,502,277 Apparatus, in particular end effector
An apparatus, in particular end effector, for receiving, transporting and/or positioning a wafer frame which is covered by a carrier film for carrying a wafer,...
US-9,502,276 System architecture for vacuum processing
A system for processing substrates in plasma chambers, such that all substrates transport and loading/unloading operations are performed in atmospheric...
US-9,502,275 Service tunnel for use on capital equipment in semiconductor manufacturing and research fabs
A system for processing substrates is provided, comprising: a wafer transport assembly that is configured to transport wafers to and from one or more process...
US-9,502,274 Wafer loaders having buffer zones
Embodiments of the present inventive concepts provide a wafer loader having one or more buffer zones to prevent damage to a wafer loaded in the wafer loader....
US-9,502,273 Heat treatment apparatus and heat treatment method for measuring particle concentration
A heat treatment apparatus includes a chamber for receiving a substrate therein, and a measurement part for measuring an air particle concentration in a...
US-9,502,272 Devices and methods of packaging semiconductor devices
Devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a device includes a first semiconductor device and a second...
US-9,502,271 Warpage control for flexible substrates
Flexible structures and method of providing a flexible structure are disclosed. In some embodiments, a method of providing a flexible structure includes:...
US-9,502,270 Semiconductor device packages, packaging methods, and packaged semiconductor devices
Semiconductor device packages, packaging methods, and packaged semiconductor devices are disclosed. In some embodiments, a package for a semiconductor device...
US-9,502,269 Method and apparatus for cooling electonic components
An apparatus for cooling electronic devices to be used in the vacuum of space is described. a window frame is provided as packaging for an electronic device...
US-9,502,268 Method and structure for wafer level packaging with large contact area
A method to provide a wafer level package with increasing contact pad area comprising the steps of forming a first packaging layer on wafer top surface,...
US-9,502,267 Integrated circuit packaging system with support structure and method of manufacture thereof
An integrated circuit packaging system, and a method of manufacture thereof, includes: a support structure having: an internal insulation layer having a hole, a...
US-9,502,266 Silicon wafer and method of manufacturing thereof, and method of manufacturing semiconductor device
An object of the present invention is to provide an epitaxial wafer on which dislocation is preventable even when a LSA treatment is performed in device...
US-9,502,265 Vertical gate all around (VGAA) transistors and methods of forming the same
An embodiment method includes forming a nanowire extending upwards from a substrate, wherein the nanowire includes: a bottom semiconductor region; a middle...
US-9,502,264 Method for selective oxide removal
A method for removing oxide selective to a material comprising at least silicon and at least nitrogen is disclosed, the method comprising providing in a reactor...
US-9,502,263 UV assisted CVD AlN film for BEOL etch stop application
Implementations described herein generally relate to methods for depositing etch stop layers, such as AlN layers, using UV assisted CVD. Methods disclosed...
US-9,502,262 Nanocrystalline diamond carbon film for 3D NAND hardmask application
A nanocrystalline diamond layer for use in forming a semiconductor device and methods for using the same are disclosed herein. The device can include a...
US-9,502,261 Spacer etching process for integrated circuit design
A method includes forming a first material layer on a substrate and performing a first patterning process using a first layout to form a first plurality of...
US-9,502,260 Method for forming a semiconductor structure
The present invention provides a method for forming a semiconductor structure, including: firstly, providing a substrate, a fin structure being disposed on the...
US-9,502,259 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a fin-shaped structure on the...
US-9,502,258 Anisotropic gap etch
A method of anisotropically dry-etching exposed substrate material on a patterned substrate is described. The patterned substrate has a gap formed in a single...
US-9,502,257 Non-volatile memory device having asymmetrical control gates surrounding a floating gate and manufacturing...
A non-volatile memory device and a method of manufacturing the non-volatile memory device, where the non-volatile memory device includes a floating gate...
US-9,502,256 ZrAION films
Atomic layer deposition (ALD) can be used to form a dielectric layer of zirconium aluminum oxynitride (ZrAlON) for use in a variety of electronic devices....
US-9,502,255 Low-k damage repair and pore sealing agents with photosensitive end groups
Methods of repairing damaged low-k dielectric films using UV-activated photosensitive organic compounds are described herein. Methods of sealing pores by...
US-9,502,254 Photoresists and methods for use thereof
New photoresists are provided that comprise preferably as distinct components: a resin, a photoactive component and a phenolic component Preferred photoresists...
US-9,502,253 Method of manufacturing an integrated circuit
A method of forming an integrated circuit comprises forming a first doped region in a substrate using a first angle ion implantation performed on a first side...
US-9,502,252 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one fin-shaped structure...
US-9,502,251 Method for fabricating low-cost isolated resurf LDMOS and associated BCD manufacturing process
A method for fabricating a LDMOS device in a semiconductor substrate of a first doping type, including: implanting a series of dopants into the semiconductor...
US-9,502,250 Manufacturing method of silicon carbide semiconductor apparatus
In a surface of a SiC semiconductor portion, a surface electrode film including a first electrode film composed of nickel and a second electrode film composed...
US-9,502,249 Masking process and structures formed thereby
A method, e.g., of forming and using a mask, includes forming an inverse mask over a dielectric layer; forming a mask layer conformally over the inverse mask;...
US-9,502,248 Methods for making a semiconductor chip device
According to various embodiments, a method may include: forming a first layer on a surface using a first lift-off process; forming a second layer over the first...
US-9,502,247 Method for forming coating film for lithography
The present invention provides a method for forming a coating film for a lithography, comprising the steps of: performing spin coating of a composition for...
US-9,502,246 Methods of forming oxide semiconductor devices and methods of manufacturing display devices having oxide...
A method of forming an oxide semiconductor device may be provided. In the method, a substrate comprising a first major surface and a second major surface that...
US-9,502,245 Elimination of defects in long aspect ratio trapping trench structures
A method of forming a semiconductor in a long trench. The method may include; forming a first semiconductor on a substrate and in a long trench; forming a first...
US-9,502,244 Manufacturing method for forming semiconductor structure
The present invention provides a method for forming a semiconductor structure, comprising: firstly, a substrate is provided, next, a first dry etching process...
US-9,502,243 Multi-orientation SOI substrates for co-integration of different conductivity type semiconductor devices
A method of forming a semiconductor device that includes providing a base semiconductor substrate having a first orientation crystal plane, and forming an...
US-9,502,242 Indium gallium zinc oxide layers for thin film transistors
Embodiments of the present disclosure generally provide a method and apparatus for forming an IGZO active layer within a thin film transistor (TFT) device. In...
US-9,502,241 Group III nitride crystal production method and group III nitride crystal
Provided is a high-quality Group III nitride crystal of excellent processability. A Group III nitride crystal is produced by forming a film is composed of an...
US-9,502,240 Preparation method of crystalline silicon film based on layer transfer
Provided is a preparation method of a crystalline silicon film. The method includes: 1) forming a mask for making a periodic silicon rod array on a...
US-9,502,239 Substrate processing method, substrate processing apparatus, method of manufacturing semiconductor device and...
There is provided a substrate processing method, including: (a) loading a substrate into a processing vessel having a pre-baked film containing a silazane bond;...
US-9,502,238 Deposition of conformal films by atomic layer deposition and atomic layer etch
Methods for depositing conformal films using a halogen-containing etchant during atomic layer deposition are provided. Methods involve exposing a substrate to a...
US-9,502,237 Substrate processing apparatus, method of manufacturing semiconductor device and non-transitory...
Provided are a substrate processing apparatus, a method of manufacturing a semiconductor device and a non-transitory computer-readable recording medium. The...
US-9,502,236 Substrate processing apparatus, non-transitory computer-readable recording medium and method of manufacturing...
There is provided a method of manufacturing a semiconductor device by processing a substrate by alternately supplying a first processing gas and a second...
US-9,502,235 Thin film transistor, method for manufacturing the same, array substrate and display device
According to embodiments of the invention, a thin film transistor (TFT), a manufacturing method of the TFT, an array substrate and a display device are...
US-9,502,234 Methods to prepare silicon-containing films
Described herein are methods of forming dielectric films such as non-porous dielectric films, comprising silicon, oxide, and optionally nitrogen, carbon,...
US-9,502,233 Method for manufacturing semiconductor device, method for processing substrate, substrate processing device and...
In order to extend the cycle of gas cleaning for a film-forming device, a method for manufacturing a semiconductor device includes: a substrate carry-in process...
US-9,502,232 Inhibiting diffusion of elements between material layers of a layered circuit structure
Methods for fabricating a layered circuit structure are provided, which include, for instance: depositing a first material layer above a substrate, the first...
US-9,502,231 Photoresist layer and method
A system and method for middle layers is provided. In an embodiment the middle layer comprises a floating component in order to form a floating region along a...
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