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Solar cell module
A solar cell module includes a solar cell panel including a plurality of solar cells and a bus bar connected to the solar cells, a protective substrate on the...
Transparent contacts for stacked compound photovoltaic cells
A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell...
Method for processing a minute structure on a surface of the silicon
It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step...
An apparatus according to an exemplary aspect of the present disclosure includes, among other things, a substrate, at least one semiconductor light-detector on...
Solar cell having a rear side metallization
Various embodiments provide a solar cell. The solar cell includes a substrate having a front side and a rear side. At least the front side receives light. The...
Method for manufacturing a front electrode of a semiconductor device
The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive...
Solar cell and solar cell assembly
Solar cell including a substrate with first p-n-junction, separating the substrate into front portion having first doping and rear portion having second doping,...
Solar cell and method for manufacturing the same
A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode...
Photovoltaic device and method of manufacture
A photovoltaic module including a dielectric tunneling layer and methods of forming a photovoltaic module with a dielectric tunneling layer.
Schottky diode and method of fabricating the same
Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core...
Method for manufacturing semiconductor device and pin diode
An IGBT (15) is formed in a semiconductor substrate (1). A temperature sense diode (17) made of polysilicon or amorphous silicon is formed on the semiconductor...
Solid-state image sensing device with electrode implanted into deep trench
A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first...
A p-type anode layer (2) provided on an n-type drift layer (1) in the active region. A p-type diffusion layer (3) is provided on the n-type drift layer (1) in a...
High voltage depletion mode N-channel JFET
An integrated circuit and method having a JFET with a buried drift layer and a buried channel in which the buried channel is formed by implanting through...
Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
A nonvolatile memory ("NVM") bitcell with one or more active regions capacitively coupled to the floating gate but that are separated from both the source and...
Thin film transistor, array substrate, method of fabricating same, and
A thin film transistor, an array substrate, a method of fabricating the same, and a display device are provided. The thin film transistor includes a substrate...
Thin-film transistor element, method for manufacturing same, and display
A thin-film transistor includes: a gate electrode; a channel layer not adjacent to the gate electrode; a channel protection layer exposing portion of the...
Transistors, methods of manufacturing the same, and electronic devices
According to example embodiments, a transistor includes a gate, a channel layer that is separate from the gate, a gate insulating layer between the gate and the...
Oxide, semiconductor device, module, and electronic device
To provide a crystalline oxide semiconductor which can be used as a semiconductor of a transistor or the like. The crystalline oxide semiconductor is an oxide...
A transistor is provided in which the bottom surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar...
Semiconductor device and method for manufacturing the same
A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate...
A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided....
Lateral gate electrode TFT switch and liquid crystal display device
A lateral gate electrode TFT switch and a liquid crystal display device are disclosed. The lateral TFT switch has a substrate, a source-drain area, a gate...
TFT array substrate and manufacturing method of the same
A TFT array substrate and a manufacturing method of the same are disclosed by the present disclosure. The TFT array substrate includes a base, a light shielding...
Contacts for highly scaled transistors
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D)...
Thin film transistor display panel
A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the...
Thin film transistor
Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is...
Liquid crystal display and manufacturing method thereof
A liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected to the thin film transistor; and a...
Single field effect transistor capacitor-less memory device and method of
operating the same
A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel...
Channel cladding last process flow for forming a channel region on a
FinFET device having a reduced size fin in...
One method of forming epi semiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming a sacrificial...
Radiation-hardened-by-design (RHBD) multi-gate device
The present invention discloses a radiation-hardened-by-design (RHBD) multi-gate device and a fabrication method thereof. The multi-gate device of the present...
Formation of bulk SiGe fin with dielectric isolation by anodization
A method of fabricating a semiconductor device is provided that includes providing a material stack that includes a silicon layer, a doped semiconductor layer,...
Epitaxial block layer for a fin field effect transistor device
Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are...
Device having source/drain regions regrown from un-relaxed silicon layer
A device including a silicon substrate, a silicon germanium layer, a silicon layer, a gate stack, and silicon-containing stressors is provided. In an...
Methods of forming strained channel regions on FinFET devices by
performing a heating process on a...
One illustrative method disclosed herein includes, among other things, removing at least a portion of a vertical height of portions of an overall fin structure...
Semiconductor device having dual work function gate structure, method for
fabricating the same, transistor...
A semiconductor device including a substrate in which a trench is formed, a first impurity region and a second impurity region formed in the substrate separated...
Vertical MOS semiconductor device for high-frequency applications, and
related manufacturing process
A MOS semiconductor device of a vertical type has: a functional layer, having a first type of conductivity; gate structures, which are formed above the...
LDMOS device with high-potential-biased isolation ring
An LDMOS device implements a substrate having a buried isolation layer, a first well region that incorporates two stacked sub-regions to provide a PN junction...
Semiconductor arrangement and formation thereof
A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first...
Heterojunction semiconductor device for reducing parasitic capacitance
A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, an interlayer dielectric, an inter-source layer, an...
Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a...
Method and system for a semiconductor device with integrated transient
A power transistor assembly and method of operating the assembly are provided. The power transistor assembly includes integrated transient voltage suppression...
Diode, use thereof, and a method for producing the same
High frequency currents may be rectified by means of a printable diode comprising a first and a second electrode, between which a semiconducting layer...
Short-gate tunneling field effect transistor having non-uniformly doped
vertical channel and fabrication method...
The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof....
InGaN ohmic source contacts for vertical power devices
A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and...
Semiconductor device and method of manufacturing same
To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k...
3-dimensional non-volatile memory device and method of manufacturing the
A non-volatile memory device comprising a plurality of strings each including a drain select transistor, drain-side memory cells, a pipe transistor, source-side...
Non-volatile memory structure and manufacturing method thereof
A method for manufacturing a non-volatile memory structure includes providing a substrate having a memory region and a logic region defined thereon, masking the...
Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a...
Punch through stopper for semiconductor device
A method for forming a semiconductor device comprises, forming a fin on a semiconductor substrate, forming spacers adjacent to the fin, etching to remove...