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Patent # Description
US-9,508,882 Solar cell module
A solar cell module includes a solar cell panel including a plurality of solar cells and a bus bar connected to the solar cells, a protective substrate on the...
US-9,508,881 Transparent contacts for stacked compound photovoltaic cells
A microsystems-enabled multi-junction photovoltaic (MEM-PV) cell includes a first photovoltaic cell having a first junction, the first photovoltaic cell...
US-9,508,880 Method for processing a minute structure on a surface of the silicon substrate
It is an object to provide a method for processing a silicon substrate that can reduce surface reflectance as much as possible. The method includes a first step...
US-9,508,879 Detector device
An apparatus according to an exemplary aspect of the present disclosure includes, among other things, a substrate, at least one semiconductor light-detector on...
US-9,508,878 Solar cell having a rear side metallization
Various embodiments provide a solar cell. The solar cell includes a substrate having a front side and a rear side. At least the front side receives light. The...
US-9,508,877 Method for manufacturing a front electrode of a semiconductor device
The present invention provides a method for manufacturing a front electrode of a semiconductor device. The method includes using an electrically conductive...
US-9,508,876 Solar cell and solar cell assembly
Solar cell including a substrate with first p-n-junction, separating the substrate into front portion having first doping and rear portion having second doping,...
US-9,508,875 Solar cell and method for manufacturing the same
A solar cell is discussed, and includes a substrate; a first field region; a first electrode directly formed on an emitter region; and a second electrode...
US-9,508,874 Photovoltaic device and method of manufacture
A photovoltaic module including a dielectric tunneling layer and methods of forming a photovoltaic module with a dielectric tunneling layer.
US-9,508,873 Schottky diode and method of fabricating the same
Provided is a Schottky diode. The Schottky diode includes: a substrate; a core on the substrate; a metallic layer on the core; and a shell surrounding the core...
US-9,508,872 Method for manufacturing semiconductor device and pin diode
An IGBT (15) is formed in a semiconductor substrate (1). A temperature sense diode (17) made of polysilicon or amorphous silicon is formed on the semiconductor...
US-9,508,871 Solid-state image sensing device with electrode implanted into deep trench
A solid-state image sensing device is provided including a first semi-conducting layer of first conductivity, a second semi-conducting layer of first...
US-9,508,870 Diode
A p-type anode layer (2) provided on an n-type drift layer (1) in the active region. A p-type diffusion layer (3) is provided on the n-type drift layer (1) in a...
US-9,508,869 High voltage depletion mode N-channel JFET
An integrated circuit and method having a JFET with a buried drift layer and a buried channel in which the buried channel is formed by implanting through...
US-9,508,868 Asymmetric dense floating gate nonvolatile memory with decoupled capacitor
A nonvolatile memory ("NVM") bitcell with one or more active regions capacitively coupled to the floating gate but that are separated from both the source and...
US-9,508,867 Thin film transistor, array substrate, method of fabricating same, and display device
A thin film transistor, an array substrate, a method of fabricating the same, and a display device are provided. The thin film transistor includes a substrate...
US-9,508,866 Thin-film transistor element, method for manufacturing same, and display device
A thin-film transistor includes: a gate electrode; a channel layer not adjacent to the gate electrode; a channel protection layer exposing portion of the...
US-9,508,865 Transistors, methods of manufacturing the same, and electronic devices including transistors
According to example embodiments, a transistor includes a gate, a channel layer that is separate from the gate, a gate insulating layer between the gate and the...
US-9,508,864 Oxide, semiconductor device, module, and electronic device
To provide a crystalline oxide semiconductor which can be used as a semiconductor of a transistor or the like. The crystalline oxide semiconductor is an oxide...
US-9,508,863 Semiconductor device
A transistor is provided in which the bottom surface portion of an oxide semiconductor film is provided with a metal oxide film containing a constituent similar...
US-9,508,862 Semiconductor device and method for manufacturing the same
A semiconductor device includes a pixel electrode and a transistor which includes a first gate electrode, a first insulating layer over the first gate...
US-9,508,861 Semiconductor device
A semiconductor device which includes an oxide semiconductor and in which formation of a parasitic channel due to a gate BT stress is suppressed is provided....
US-9,508,860 Lateral gate electrode TFT switch and liquid crystal display device
A lateral gate electrode TFT switch and a liquid crystal display device are disclosed. The lateral TFT switch has a substrate, a source-drain area, a gate...
US-9,508,859 TFT array substrate and manufacturing method of the same
A TFT array substrate and a manufacturing method of the same are disclosed by the present disclosure. The TFT array substrate includes a base, a light shielding...
US-9,508,858 Contacts for highly scaled transistors
A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D)...
US-9,508,857 Thin film transistor display panel
A thin film transistor display panel a includes a transparent substrate; a gate electrode positioned on the substrate; a gate insulating layer positioned on the...
US-9,508,856 Thin film transistor
Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is...
US-9,508,855 Liquid crystal display and manufacturing method thereof
A liquid crystal display includes: a substrate; a thin film transistor disposed on the substrate; a pixel electrode connected to the thin film transistor; and a...
US-9,508,854 Single field effect transistor capacitor-less memory device and method of operating the same
A single field effect transistor capacitor-less memory device, and method of operating the same, including a drain region, a source region, an intrinsic channel...
US-9,508,853 Channel cladding last process flow for forming a channel region on a FinFET device having a reduced size fin in...
One method of forming epi semiconductor cladding materials in the channel region of a semiconductor device is disclosed which includes forming a sacrificial...
US-9,508,852 Radiation-hardened-by-design (RHBD) multi-gate device
The present invention discloses a radiation-hardened-by-design (RHBD) multi-gate device and a fabrication method thereof. The multi-gate device of the present...
US-9,508,851 Formation of bulk SiGe fin with dielectric isolation by anodization
A method of fabricating a semiconductor device is provided that includes providing a material stack that includes a silicon layer, a doped semiconductor layer,...
US-9,508,850 Epitaxial block layer for a fin field effect transistor device
Approaches for enabling uniform epitaxial (epi) growth in an epi junction area of a semiconductor device (e.g., a fin field effect transistor device) are...
US-9,508,849 Device having source/drain regions regrown from un-relaxed silicon layer
A device including a silicon substrate, a silicon germanium layer, a silicon layer, a gate stack, and silicon-containing stressors is provided. In an...
US-9,508,848 Methods of forming strained channel regions on FinFET devices by performing a heating process on a...
One illustrative method disclosed herein includes, among other things, removing at least a portion of a vertical height of portions of an overall fin structure...
US-9,508,847 Semiconductor device having dual work function gate structure, method for fabricating the same, transistor...
A semiconductor device including a substrate in which a trench is formed, a first impurity region and a second impurity region formed in the substrate separated...
US-9,508,846 Vertical MOS semiconductor device for high-frequency applications, and related manufacturing process
A MOS semiconductor device of a vertical type has: a functional layer, having a first type of conductivity; gate structures, which are formed above the...
US-9,508,845 LDMOS device with high-potential-biased isolation ring
An LDMOS device implements a substrate having a buried isolation layer, a first well region that incorporates two stacked sub-regions to provide a PN junction...
US-9,508,844 Semiconductor arrangement and formation thereof
A semiconductor arrangement and method of forming the same are described. A semiconductor arrangement includes a third metal connect in contact with a first...
US-9,508,843 Heterojunction semiconductor device for reducing parasitic capacitance
A semiconductor device includes an active layer, a source electrode, a drain electrode, a gate electrode, an interlayer dielectric, an inter-source layer, an...
US-9,508,842 Semiconductor device and method of manufacturing semiconductor device
A semiconductor device includes a buffer layer, a channel layer, a barrier layer, and agate electrode over a substrate, the gate electrode being disposed in a...
US-9,508,841 Method and system for a semiconductor device with integrated transient voltage suppression
A power transistor assembly and method of operating the assembly are provided. The power transistor assembly includes integrated transient voltage suppression...
US-9,508,840 Diode, use thereof, and a method for producing the same
High frequency currents may be rectified by means of a printable diode comprising a first and a second electrode, between which a semiconducting layer...
US-9,508,839 Short-gate tunneling field effect transistor having non-uniformly doped vertical channel and fabrication method...
The present invention discloses a short-gate tunneling field effect transistor having a non-uniformly doped vertical channel and a fabrication method thereof....
US-9,508,838 InGaN ohmic source contacts for vertical power devices
A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and...
US-9,508,837 Semiconductor device and method of manufacturing same
To provide a semiconductor device having a nonvolatile memory improved in characteristics. In the semiconductor device, a nonvolatile memory has a high-k...
US-9,508,836 3-dimensional non-volatile memory device and method of manufacturing the same
A non-volatile memory device comprising a plurality of strings each including a drain select transistor, drain-side memory cells, a pipe transistor, source-side...
US-9,508,835 Non-volatile memory structure and manufacturing method thereof
A method for manufacturing a non-volatile memory structure includes providing a substrate having a memory region and a logic region defined thereon, masking the...
US-9,508,834 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon and a...
US-9,508,833 Punch through stopper for semiconductor device
A method for forming a semiconductor device comprises, forming a fin on a semiconductor substrate, forming spacers adjacent to the fin, etching to remove...
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