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Patent # Description
US-9,515,229 Semiconductor light emitting devices with optical coatings and methods of making same
A method of making a semiconductor light emitting device having one or more light emitting surfaces includes positioning a stencil on a substrate such that a...
US-9,515,228 Group III nitride semiconductor light-emitting device
A face-up-type Group III nitride semiconductor light-emitting device includes a growth substrate, an n-type layer, a light-emitting layer, a p-type layer, an...
US-9,515,227 Near infrared light source in bulk silicon
A light emitting device (10) comprises a body (12) of a semiconductor material having a first face (14) and at least one other face (16). At least one...
US-9,515,226 Light emitting device and method for making the same
A light emitting device comprises a substrate, a semiconductor body, and a transition layer. The semiconductor body is configured to generate light and...
US-9,515,225 Light-emitting device
A light-emitting device of an embodiment of the present disclosure comprises a substrate; a semiconductor stack comprising a first type semiconductor layer, a...
US-9,515,224 Semiconductor light-emitting device
A semiconductor light-emitting device includes a substrate, a first reflective layer disposed on the substrate and including first openings, a first...
US-9,515,223 Semiconductor light emitting device substrate including an uneven structure having convex portions, and a flat...
A semiconductor light emitting device substrate including an uneven structure on one surface, the uneven structure including numerous convex portions and a flat...
US-9,515,222 Gallium nitride on 3C--SiC composite wafer
We disclose a semiconductor structure comprising a monocrystalline silicon wafer; spaced apart monocrystalline silicon carbide layers disposed directly on the...
US-9,515,221 Epitaxial structure and method for making the same
An epitaxial structure and a method for making the same are provided. The epitaxial structure includes a substrate, an epitaxial layer and a carbon nanotube...
US-9,515,220 Light emitting diode with doped quantum wells and associated manufacturing method
A light emitting diode based on GaN including an active zone located between an n-doped layer and a p-doped layer that together form a p-n junction, wherein the...
US-9,515,219 Nitride semiconductor device and method for producing the same
A method for producing a nitride semiconductor device. The method comprises providing a substrate made of a material other than a nitride semiconductor. The...
US-9,515,218 Vertical pillar structured photovoltaic devices with mirrors and optical claddings
A photovoltaic device operable to convert light to electricity, comprising a substrate, a plurality of structures essentially perpendicular to the substrate,...
US-9,515,217 Monolithically isled back contact back junction solar cells
According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell is provided. Emitter...
US-9,515,216 Light sensitive switch for semiconductor package tamper detection
Embodiments relate to the detection of semiconductor tampering with a light-sensitive circuit. A tamper detection device for an integrated circuit includes a...
US-9,515,215 Efficiency restoration in a photovoltaic cell
The electrical output efficiency of a photovoltaic thermal system can be restored from degradation due to light exposure by annealing a photovoltaic thermal...
US-9,515,214 Solar battery module and manufacturing method thereof
A solar battery module includes: a plurality of solar battery cells, a plain shape of each being a substantial rectangle, and a ratio of a short side length and...
US-9,515,213 Back protective sheet for solar cell module and solar cell module
A back protective sheet for a solar cell module containing a polyester support that is biaxially stretched and then subjected to a thermal fixation treatment;...
US-9,515,212 Solar cell and method for manufacturing with pre-amorphization implant to form emitter
A method for manufacturing a solar cell includes preparing a semiconductor substrate having a first conductivity type dopant; ion-implanting a pre-amorphization...
US-9,515,211 Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer
A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface...
US-9,515,210 Diode barrier infrared detector devices and superlattice barrier structures
Diode barrier infrared detector devices and superlattice barrier structures are disclosed. In one embodiment, a diode barrier infrared detector device includes...
US-9,515,209 Bare quantum dots superlattice photonic devices
Manipulation of the passivation ligands of colloidal quantum dots and use in QD electronics. A multi-step electrostatic process is described which creates bare...
US-9,515,208 Solid-state image pickup device and electronic apparatus
Solid-state imaging devices (1) including: a substrate (12); a photoelectric conversion section (50) comprising a chalcopyrite material formed over the...
US-9,515,207 Organic compound, photovoltaic layer and organic photovoltaic device
The present invention relates generally to the field of photovoltaic devices and particularly to the organic photovoltaic layer. More specifically, the organic...
US-9,515,206 Electron-deficient fluorous porphyrins and methods of making and their use in organic solar cells
Electron-deficient fluorous porphyrin molecules may have dual functions of light harvesting and electron accepting or donating and may be ideally suited for use...
US-9,515,205 Method for metallizing textured surfaces
A method for creating electrically conducting or semiconducting patterns on a textured surface including plural reliefs of amplitude greater than or equal to...
US-9,515,204 Synchronous wired-or ACK status for memory with variable write latency
A memory controller comprises a command interface to transmit a memory command to a plurality of memory devices associated with the memory controller. The...
US-9,515,203 Solar cell and method for manufacturing the same
A method of manufacturing a solar cell includes: forming a dopant layer by doping a dopant to a semiconductor substrate; and forming an electrode electrically...
US-9,515,202 Composition for forming solar cell electrode, and electrode produced from composition
A composition for solar cell electrodes includes a conductive powder, a glass frit, an organic vehicle, and a thixotropic agent, the composition satisfying each...
US-9,515,201 Solar cell module including transparent conductive film with uniform thickness
Provided is a solar cell module comprising a crystalline silicon wafer, at least one amorphous silicon layer provided on at least one of a top and bottom of the...
US-9,515,200 Photovoltaic module
A photovoltaic module capable of suppressing separation of a tab electrode can be obtained. The photovoltaic module includes a plurality of semiconductor layers...
US-9,515,199 Power semiconductor devices having superjunction structures with implanted sidewalls
A semiconductor device has a drift region having an upper surface and a lower surface. A first contact is on the upper surface of the drift region and a second...
US-9,515,198 Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors
A lateral bipolar junction transistor (BJT) magnetic field sensor that includes a layout of two or more adjacent lateral BJT devices. Each BJT includes a...
US-9,515,197 Silicon carbide semiconductor device having layer covering corner portion of depressed portion
In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the...
US-9,515,196 Relaxed silicon germanium platform for high speed CMOS electronics and high speed analog circuits
Structures and methods for fabricating high speed digital, analog, and combined digital/analog systems using planarized relaxed SiGe as the materials platform....
US-9,515,195 Organic molecular memory
An organic molecular memory of an embodiment includes a first conductive layer, a second conductive layer, and an organic molecular layer interposed between the...
US-9,515,194 Nano-ribbon channel transistor with back-bias control
Embodiments of the invention include a method for fabricating a nano-ribbon transistor device and the resulting structure. A nano-ribbon transistor device...
US-9,515,193 Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and...
Provided is a metal oxide film, including a component having a peak position, in an XPS spectrum thereof, within a range corresponding to a binding energy of...
US-9,515,192 Semiconductor device
An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate...
US-9,515,191 Thin-film field effect transistor, driving method thereof, array substrate, display device, and electronic product
The disclosure provides a thin film field effect transistor, a driving method thereof, an array substrate, a display device and an electronic product. The thin...
US-9,515,190 Method for manufacturing polysilicon thin film transistor
A method for manufacturing polysilicon thin film transistor is disclosed, and the method comprises the following steps: forming a semiconductor material layer...
US-9,515,189 Semiconductor device and manufacturing method of semiconductor device using metal oxide
A method of manufacturing a semiconductor device using a metal oxide includes forming a metal oxide layer on a substrate, forming an amorphous semiconductor...
US-9,515,188 Fin field effect transistors having conformal oxide layers and methods of forming same
An embodiment fin field-effect-transistor (finFET) includes a semiconductor fin comprising a channel region and a gate oxide on a sidewall and a top surface of...
US-9,515,187 Controlling the shape of source/drain regions in FinFETs
An integrated circuit structure includes a fin field-effect transistor (FinFET) including a semiconductor fin over and adjacent to insulation regions; and a...
US-9,515,186 Semiconductor device and method of fabricating the same
A semiconductor device includes a semiconductor substrate including a group III element and a group V element, and a gate structure on the semiconductor...
US-9,515,185 Silicon germanium-on-insulator FinFET
A structurally stable SiGe-on-insulator FinFET employs a silicon nitride liner to prevent de-stabilizing oxidation at the base of a SiGe fin. The silicon...
US-9,515,184 Semiconductor arrangement with multiple-height fins and substrate trenches
Among other things, one or semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. An etch sequence is performed to...
US-9,515,183 Semiconductor device including buried-gate MOS transistor with appropriate stress applied thereto
According to one embodiment, a semiconductor device includes a semiconductor substrate having a trench and including an active area including a channel area...
US-9,515,182 High-integration semiconductor device and method for fabricating the same
A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active...
US-9,515,181 Semiconductor device with self-aligned back side features
Various methods and devices that involve self-aligned features on a semiconductor on insulator process are provided. An exemplary method comprises forming a...
US-9,515,180 Vertical slit transistor with optimized AC performance
A vertical slit transistor includes raised source, drain, and channel regions in a semiconductor substrate. Two gate electrodes are positioned adjacent...
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