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LED epitaxial structure and fabrication method thereof
An LED epitaxial structure includes a substrate; a GaN nucleating layer; a superlattice buffer layer comprising a plurality pairs of alternately stacked...
Micro assembled LED displays and lighting elements
The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with...
Light emitting diode chip having electrode pad
Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a...
Light emitting device and lighting system
A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a...
Light emitting diode, method of fabricating the same and LED module having
Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first...
Ultraviolet light emitting device separated from growth substrate and
method of fabricating the same
A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including...
Light emitting element and light emitting device using the same
An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time....
Systems and methods for depositing and charging solar cell layers
Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g.,...
Solar cell having doped buffer layer and method of fabricating the solar
A method includes: forming a buffer layer over an absorber layer of a photovoltaic device; and extrinsically doping the buffer layer after the forming step.
Composition for forming P-type diffusion layer, method of forming P-type
diffusion layer, and method of...
The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the...
Device and method for restoring silicon-based photovoltaic solar cells
A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to...
Nitride semiconductor template and ultraviolet LED
A nitride semiconductor template includes a Ga.sub.2O.sub.3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga.sub.2O.sub.3...
Manufacturing method of avalanche photodiode
A manufacturing method of an avalanche photodiode includes: forming a p-type field relaxation layer on a substrate; forming a cap layer on the p-type field...
Method of making an optical detector
An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The...
Method for producing a solar cell, in particular a silicon thin-film solar
A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer (3) is deposited on a glass substrate (1) and at least a...
Method of manufacturing solar cell module
A method of manufacturing a solar cell module comprising pressing a first silicone gel sheet provided on a sunlight receiving surface of a solar cell string and...
Optically active coating for improving the yield of photosolar conversion
The invention relates to optically active coatings for improving the yield of photosolar conversion, consisting of a transparent matrix containing a plurality...
Focusing solar light guide module
A focusing solar light guide module includes a lens array plate and a light guide plate. The lens array plate includes at least one lens. Each lens receiving...
Direct solar-radiation collection and concentration element and panel
Element, panel and direct solar radiation collecting and concentrating system by means of panels with collecting and concentrating elements which are allowed...
Solar cell module
Provided is a solar cell module wherein a rear surface protective sheet has excellent long-term durability, and transmissivity of ultraviolet that reaches the...
A solar cell including a non-amorphous semiconductor substrate of a first conductive type; at least a first semiconductor layer on the non-amorphous...
Photodetection semiconductor device having light receiving element
In order to provide a photodetection semiconductor device including a light receiving element configured to reduce afterimages, a photodiode is formed by a PN...
Emitter structure based on silicon components to be used in a photovoltaic
converter and a method for...
This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably increase the conversion efficiency. This...
Quantum dot infrared photodetector
A quantum dot infrared photodetector (QDIP) that can enhance the photocurrent to a greater level than the dark current and/or can be operated at high...
Photovoltaic devices including heterojunctions
A photovoltaic cell including a first semiconductor layer that includes a III-V compound semiconductor, the first semiconductor layer positioned over a...
Titanate interfacial layers in perovskite material devices
Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The...
Apparatus and method for optically initiating collapse of a reverse biased
P-type-N-type junction to cause a...
An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a...
Embedded optical sensors using transverse Fabry-Perot resonator as
A detector to detect light of a wavelength range and an incidence angle range, the detector including a substrate, a plurality of dielectric structures on the...
Sheet assembly with aluminum based electrodes
Various methods for preparing and/or processing electrically conductive aluminum members such as used in electronic circuits and components are described. Also...
Power inverter docking system for photovoltaic modules
An electronics module docking system includes docking member removably coupled to a photovoltaic module. The docking system includes a first connector port...
Solar cells with improved lifetime, passivation and/or efficiency
A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over...
3D high voltage charge pump
A capacitor and method of forming a capacitor are presented. The capacitor includes a substrate having a capacitor region in which the capacitor is disposed....
Capacitance type MEMS sensor
A capacitance type MEMS sensor has a first electrode portion and a second electrode portion facing each other. The sensor includes a semiconductor substrate...
Semiconductor device and method of manufacturing the same
In an MONOS-type memory cell with a split gate structure, short circuit between a selection gate electrode and a memory gate electrode is prevented, and...
Semiconductor device and method for manufacturing the same
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device...
FinFETs having epitaxial capping layer on fin and methods for forming the
A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with...
Vertical super-thin body semiconductor on dielectric wall devices and
methods of their fabrication
The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as...
Self heating reduction for analog radio frequency (RF) device
A method of forming a semiconductor device includes forming a plurality of semiconductor fins from an upper semiconductor layer located on a first region of a...
Semiconductor device and method for fabricating the same
Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin...
FinFET structure and method for fabricating the same
A device comprises a substrate comprising silicon, a fin structure comprising a lower portion formed of silicon and enclosed by an isolation region, a middle...
Semiconductor devices including a stressor in a recess and methods of
forming the same
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast...
Charge carrier transport facilitated by strain
A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second...
Transistor including a stressed channel, a method for fabricating the
same, and an electronic device including...
A semiconductor device includes a first channel, a second channel, a first strained gate electrode including a first lattice-mismatched layer for applying a...
Vertical non-planar semiconductor device for system-on-chip (SoC)
Vertical non-planar semiconductor devices for system-on-chip (SoC) applications and methods of fabricating vertical non-planar semiconductor devices are...
High voltage integrated circuits having improved on-resistance value and
improved breakdown voltage
A high voltage integrated device includes a semiconductor layer having a first conductivity, a source region having a second conductivity and a drift region...
Semiconductor device having buried layer
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate,...
Electrodes for semiconductor devices and methods of forming the same
A III-N semiconductor HEMT device includes an electrode-defining layer on a III-N material structure. The electrode-defining layer has a recess with a first...
Semiconductor device and method of manufacturing the same
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device is a half bridged field effect transistor...
Characteristics of a semiconductor device are improved. The semiconductor device is configured to provide a trench that penetrates a barrier layer, and reaches...
Silicon-controlled rectifier electrostatic discharge protection device and
method for forming the same
Various embodiments provide SCR ESD protection devices and methods for forming the same. An exemplary device includes a semiconductor substrate having a P-type...