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Patent # Description
US-9,520,538 LED epitaxial structure and fabrication method thereof
An LED epitaxial structure includes a substrate; a GaN nucleating layer; a superlattice buffer layer comprising a plurality pairs of alternately stacked...
US-9,520,537 Micro assembled LED displays and lighting elements
The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with...
US-9,520,536 Light emitting diode chip having electrode pad
Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a...
US-9,520,535 Light emitting device and lighting system
A light emitting device includes a first electrode, a first semiconductor layer disposed on the first electrode and including a first conductive dopant, a...
US-9,520,534 Light emitting diode, method of fabricating the same and LED module having the same
Disclosed are a light emitting diode (LED), an LED module including the same, and a method of fabricating the same. The light emitting diode includes a first...
US-9,520,533 Ultraviolet light emitting device separated from growth substrate and method of fabricating the same
A UV light emitting device and a method for fabricating the same are disclosed. The method includes forming a first super-lattice layer including...
US-9,520,532 Light emitting element and light emitting device using the same
An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time....
US-9,520,531 Systems and methods for depositing and charging solar cell layers
Systems and methods of the present invention may be used to charge a layer (such as a passivation layer and/or antireflective layer) of a solar cell (e.g.,...
US-9,520,530 Solar cell having doped buffer layer and method of fabricating the solar cell
A method includes: forming a buffer layer over an absorber layer of a photovoltaic device; and extrinsically doping the buffer layer after the forming step.
US-9,520,529 Composition for forming P-type diffusion layer, method of forming P-type diffusion layer, and method of...
The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the...
US-9,520,528 Device and method for restoring silicon-based photovoltaic solar cells
A restoration device of at least one silicon-based photovoltaic solar cell is provided with a support of the cell and a charge carriers generator configured to...
US-9,520,527 Nitride semiconductor template and ultraviolet LED
A nitride semiconductor template includes a Ga.sub.2O.sub.3 substrate, a buffer layer that includes as a main component AlN and is formed on the Ga.sub.2O.sub.3...
US-9,520,526 Manufacturing method of avalanche photodiode
A manufacturing method of an avalanche photodiode includes: forming a p-type field relaxation layer on a substrate; forming a cap layer on the p-type field...
US-9,520,525 Method of making an optical detector
An infrared photo-detector with multiple discrete regions of a first absorber material. These regions may have geometric shapes with sloped sidewalls. The...
US-9,520,524 Method for producing a solar cell, in particular a silicon thin-film solar cell
A method for producing a solar cell, in particular a silicon thin-film solar cell, wherein a TCO layer (3) is deposited on a glass substrate (1) and at least a...
US-9,520,522 Method of manufacturing solar cell module
A method of manufacturing a solar cell module comprising pressing a first silicone gel sheet provided on a sunlight receiving surface of a solar cell string and...
US-9,520,521 Optically active coating for improving the yield of photosolar conversion
The invention relates to optically active coatings for improving the yield of photosolar conversion, consisting of a transparent matrix containing a plurality...
US-9,520,520 Focusing solar light guide module
A focusing solar light guide module includes a lens array plate and a light guide plate. The lens array plate includes at least one lens. Each lens receiving...
US-9,520,519 Direct solar-radiation collection and concentration element and panel
Element, panel and direct solar radiation collecting and concentrating system by means of panels with collecting and concentrating elements which are allowed...
US-9,520,518 Solar cell module
Provided is a solar cell module wherein a rear surface protective sheet has excellent long-term durability, and transmissivity of ultraviolet that reaches the...
US-9,520,517 Solar cell
A solar cell including a non-amorphous semiconductor substrate of a first conductive type; at least a first semiconductor layer on the non-amorphous...
US-9,520,516 Photodetection semiconductor device having light receiving element
In order to provide a photodetection semiconductor device including a light receiving element configured to reduce afterimages, a photodiode is formed by a PN...
US-9,520,515 Emitter structure based on silicon components to be used in a photovoltaic converter and a method for...
This invention aims to reduce and preferably to cancel the carrier collection limit effect in order to considerably increase the conversion efficiency. This...
US-9,520,514 Quantum dot infrared photodetector
A quantum dot infrared photodetector (QDIP) that can enhance the photocurrent to a greater level than the dark current and/or can be operated at high...
US-9,520,513 Photovoltaic devices including heterojunctions
A photovoltaic cell including a first semiconductor layer that includes a III-V compound semiconductor, the first semiconductor layer positioned over a...
US-9,520,512 Titanate interfacial layers in perovskite material devices
Photovoltaic devices such as solar cells, hybrid solar cell-batteries, and other such devices may include an active layer disposed between two electrodes. The...
US-9,520,511 Apparatus and method for optically initiating collapse of a reverse biased P-type-N-type junction to cause a...
An optical method of collapsing the electric field of an innovatively fabricated, reverse-biased PN junction causes a semiconductor switch to transition from a...
US-9,520,510 Embedded optical sensors using transverse Fabry-Perot resonator as detectors
A detector to detect light of a wavelength range and an incidence angle range, the detector including a substrate, a plurality of dielectric structures on the...
US-9,520,509 Sheet assembly with aluminum based electrodes
Various methods for preparing and/or processing electrically conductive aluminum members such as used in electronic circuits and components are described. Also...
US-9,520,508 Power inverter docking system for photovoltaic modules
An electronics module docking system includes docking member removably coupled to a photovoltaic module. The docking system includes a first connector port...
US-9,520,507 Solar cells with improved lifetime, passivation and/or efficiency
A method of fabricating a solar cell can include forming a dielectric region on a silicon substrate. The method can also include forming an emitter region over...
US-9,520,506 3D high voltage charge pump
A capacitor and method of forming a capacitor are presented. The capacitor includes a substrate having a capacitor region in which the capacitor is disposed....
US-9,520,505 Capacitance type MEMS sensor
A capacitance type MEMS sensor has a first electrode portion and a second electrode portion facing each other. The sensor includes a semiconductor substrate...
US-9,520,504 Semiconductor device and method of manufacturing the same
In an MONOS-type memory cell with a split gate structure, short circuit between a selection gate electrode and a memory gate electrode is prevented, and...
US-9,520,503 Semiconductor device and method for manufacturing the same
A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device...
US-9,520,502 FinFETs having epitaxial capping layer on fin and methods for forming the same
A FinFET and methods for forming a FinFET are disclosed. A method includes forming a semiconductor fin on a substrate, implanting the semiconductor fin with...
US-9,520,501 Vertical super-thin body semiconductor on dielectric wall devices and methods of their fabrication
The present invention is a semiconductor device comprising a semiconducting low doped vertical super-thin body (VSTB) formed on Dielectric Body Wall (such as...
US-9,520,500 Self heating reduction for analog radio frequency (RF) device
A method of forming a semiconductor device includes forming a plurality of semiconductor fins from an upper semiconductor layer located on a first region of a...
US-9,520,499 Semiconductor device and method for fabricating the same
Provided are a semiconductor device and a method for fabricating the same. The method for fabricating a semiconductor device comprises, providing an active fin...
US-9,520,498 FinFET structure and method for fabricating the same
A device comprises a substrate comprising silicon, a fin structure comprising a lower portion formed of silicon and enclosed by an isolation region, a middle...
US-9,520,497 Semiconductor devices including a stressor in a recess and methods of forming the same
Semiconductor devices including a stressor in a recess and methods of forming the semiconductor devices are provided. The methods may include forming a fast...
US-9,520,496 Charge carrier transport facilitated by strain
A semiconductor structure and formation thereof. The semiconductor structure has a first semiconductor layer with a first lattice structure and a second...
US-9,520,495 Transistor including a stressed channel, a method for fabricating the same, and an electronic device including...
A semiconductor device includes a first channel, a second channel, a first strained gate electrode including a first lattice-mismatched layer for applying a...
US-9,520,494 Vertical non-planar semiconductor device for system-on-chip (SoC) applications
Vertical non-planar semiconductor devices for system-on-chip (SoC) applications and methods of fabricating vertical non-planar semiconductor devices are...
US-9,520,493 High voltage integrated circuits having improved on-resistance value and improved breakdown voltage
A high voltage integrated device includes a semiconductor layer having a first conductivity, a source region having a second conductivity and a drift region...
US-9,520,492 Semiconductor device having buried layer
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and formed in the substrate,...
US-9,520,491 Electrodes for semiconductor devices and methods of forming the same
A III-N semiconductor HEMT device includes an electrode-defining layer on a III-N material structure. The electrode-defining layer has a recess with a first...
US-9,520,490 Semiconductor device and method of manufacturing the same
A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device is a half bridged field effect transistor...
US-9,520,489 Semiconductor device
Characteristics of a semiconductor device are improved. The semiconductor device is configured to provide a trench that penetrates a barrier layer, and reaches...
US-9,520,488 Silicon-controlled rectifier electrostatic discharge protection device and method for forming the same
Various embodiments provide SCR ESD protection devices and methods for forming the same. An exemplary device includes a semiconductor substrate having a P-type...
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