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Patent # Description
US-9,520,487 Reverse conducting insulated gate bipolar transistor
A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a barrier region of the first conductive type, wherein the...
US-9,520,486 Electrostatic protection device
An apparatus including an electrostatic discharge (ESD) protection device comprising a semiconductor having first, second and third regions arranged to form a...
US-9,520,485 3D independent double gate flash memory on bounded conductor layer
A memory device configurable for independent double gate cells, storing multiple bits per cell, includes multilayer stacks of conductive strips configured as...
US-9,520,484 Method for forming semiconductor nanowire transistors
A method for forming a semiconductor device includes forming a semiconductor substrate having at least one fin structure on an insulator on a substrate. The fin...
US-9,520,483 Method for manufacturing semiconductor device
A method for manufacturing a semiconductor device may include forming a cavity between two insulating portions that are positioned on a semiconductor substrate....
US-9,520,482 Method of cutting metal gate
A method for fabricating a semiconductor device includes forming a first fin and a second fin on a substrate. The first fin has a first gate region and the...
US-9,520,481 Electronic devices
A method of manufacturing an electronic device comprising a first terminal (e.g. a source terminal), a second terminal (e.g. a drain terminal), a semiconductor...
US-9,520,480 Normally off gallium nitride field effect transistors (FET)
A heterostructure field effect transistor (HFET) gallium nitride (GaN) semiconductor power device comprises a hetero junction structure comprises a first...
US-9,520,479 Low-temperature epitaxial method for manufacturing backside field stop layer of insulated gate bipolar...
A low-temperature epitaxial method manufactures backside field stop layer of insulated gate bipolar transistor (IGBT) first provides a first conductive type...
US-9,520,478 Methods of forming diodes
Some embodiments include methods of forming diodes in which a first electrode is formed to have a pedestal extending upwardly from a base. At least one layer is...
US-9,520,477 Semiconductor device and fabricating method thereof
A semiconductor device includes a substrate, a first and second source/drain regions, and a gate stack. The first and second source/drain regions are disposed...
US-9,520,476 Semiconductor device and method for producing same
A semiconductor device (100A) includes a substrate (2), an oxide semiconductor layer (5) formed on the substrate (2), source and drain electrodes (6s, 6d)...
US-9,520,475 Semiconductor device and method for producing the same
A method of producing a seminconductor device is disclosed in which, after proton implantation is performed, a hydrogen-induced donor is formed by a furnace...
US-9,520,474 Methods of forming a semiconductor device with a gate stack having tapered sidewalls
A semiconductor device includes a metal gate stack. The metal gate stack includes a high-k gate dielectric and a metal gate electrode over the high-k gate...
US-9,520,473 Method for producing semiconductor device and semiconductor device
A method for producing a semiconductor device includes a first step of forming a first insulating film around a fin-shaped semiconductor layer; a second step of...
US-9,520,472 Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline...
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The...
US-9,520,471 Semiconductor device having gradient implant region and manufacturing method thereof
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the...
US-9,520,470 Lateral double diffused metal oxide semiconductor device and manufacturing method thereof
A lateral double diffused metal oxide semiconductor device, includes: a P-type substrate, an epitaxial layer, a P-type high voltage well, a P-type body region,...
US-9,520,469 Fabrication of fin structures having high germanium content
High Ge content SiGe fins are provided, as well as improved techniques for forming high Ge content SiGe fins. A high Ge content fin is formed by obtaining one...
US-9,520,468 Integrated power device on a semiconductor substrate having an improved trench gate structure
A power device integrated on a semiconductor substrate and having a plurality of conductive bridges within a trench gate structure. In an embodiment, a...
US-9,520,467 Field effect transistor structure and manufacturing method thereof
The present disclosure provides an FET structure including a substrate of a first conductive type having a top surface, a first gate over the top surface, a...
US-9,520,466 Vertical gate-all-around field effect transistors and methods of forming same
Semiconductor devices and methods of forming the same are provided. A template layer is formed on a substrate, the template layer having a recess therein. A...
US-9,520,465 Diode, semiconductor device, and MOSFET
Disclosed is a technique capable of reducing loss at the time of switching in a diode. A diode disclosed in the present specification includes a cathode...
US-9,520,464 Configuration and method to generate saddle junction electric field in edge termination
This invention discloses a semiconductor power device disposed in a semiconductor substrate and having an active cell area and an edge termination area the edge...
US-9,520,463 Super junction semiconductor device including edge termination
A super junction semiconductor device includes a super junction structure and a channel stopper structure. The super junction structure includes first and...
US-9,520,462 Semiconductor device having capacitor integrated therein
Semiconductor devices are described that include a capacitor integrated therein. In an implementation, the semiconductor devices include a substrate including a...
US-9,520,461 Integrated circuit with lateral flux capacitor
An integrated circuit has a lateral flux capacitor assembly that includes a first metal layer having a capacitive portion with first and second lateral sides...
US-9,520,460 MIM capacitors with diffusion-blocking electrode structures and semiconductor devices including the same
A semiconductor device includes a MIM capacitor on a substrate. The MIM capacitor includes a dielectric region and first and second electrodes on opposite sides...
US-9,520,459 Surface treatment method for semiconductor device
A surface treatment method for a semiconductor device includes providing a substrate where a plurality of projected patterns are formed, forming a hydrophobic...
US-9,520,458 Resistor formed using resistance patterns and semiconductor devices including the same
Embodiments of the inventive concepts provide a resistor and a semiconductor device including the same. The resistor includes a substrate, a device isolation...
US-9,520,457 Display panel and repairing method thereof
A display panel and a repairing method thereof are disclosed. In one aspect, the display panel includes an active area including a plurality of pixels and a...
US-9,520,456 Organic EL display device and method of manufacturing organic EL display device
An organic EL display device includes: a lower electrode; an upper electrode; a first organic layer which is disposed between the lower electrode and the upper...
US-9,520,455 Organic light emitting display and method of fabricating the same
A subpixel structure for a display device and a method of fabricating the display device are discussed. The subpixel structure can include a light emitting...
US-9,520,454 Organic light-emitting display apparatus
An organic light-emitting display apparatus includes: a first substrate; an insulating layer on the first substrate; a signal wiring on the insulating layer; an...
US-9,520,453 Electroluminescent device and manufacturing method thereof
An electroluminescent device and manufacturing method thereof are provided. The electroluminescence device comprises an array substrate (10). The array...
US-9,520,452 Organic light-emitting display apparatus with color filter
In an aspect, an organic light-emitting display apparatus is provided, including: an insulating layer having a inclined structure; a first electrode disposed on...
US-9,520,451 Organic light-emitting diode display device and method of manufacturing the same
An organic light-emitting diode display device includes a substrate, a light-absorption layer, an active array structure, and an organic light-emitting diode....
US-9,520,450 Flexible display apparatus and method of manufacturing the same
A method of manufacturing a flexible display apparatus and a flexible display apparatus, the method including preparing a flexible substrate such that the...
US-9,520,449 Photoelectric conversion device, solid-state image pickup unit, and electronic apparatuses having work function...
A photoelectric conversion device includes an organic photoelectric conversion film; a first electrode and a second electrode provided with the organic...
US-9,520,448 Compact ReRAM based PFGA
A push-pull resistive random access memory cell circuit includes an output node, a word line, a first bit line, and a second bit line. A first resistive random...
US-9,520,447 Memory cells having a common gate terminal
Arrays of memory cells having a common gate terminal and methods of operating and forming the same are described herein. As an example, an array of memory cells...
US-9,520,446 Innovative approach of 4F2 driver formation for high-density RRAM and MRAM
Some embodiments of the present disclosure relate to a memory array comprising memory cells having vertical gate-all-around (GAA) selection transistors. In some...
US-9,520,445 Integrated non-volatile memory elements, design and use
Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a...
US-9,520,444 Implementing magnetic memory pillar design
A magnetic memory pillar cell and a method for implementing the magnetic memory cell for use in Solid-State Drives (SSDs) are provided. A magnetic memory cell...
US-9,520,443 Systems and methods for implementing magnetoelectric junctions
Embodiments of the technology implement DIOMEJ cells. In one embodiment, a DIOMEJ cell includes: an MEJ that includes, a ferromagnetic fixed layer, a...
US-9,520,442 Optoelectronic component
An optoelectronic component can be used for mixing electromagnetic radiation having different wavelengths, in particular in the far field. The optoelectronic...
US-9,520,441 Method for electronically pinning a back surface of a back-illuminated imager fabricated on a UTSOI wafer
A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical...
US-9,520,440 Imaging device and method of manufacturing the same
In an imaging device having a waveguide, a surface of an insulating film covering a seal ring is prevented from getting rough. A pixel region, a peripheral...
US-9,520,439 X-ray and optical image sensor
An image sensor for capturing X-ray image data and optical image data includes an X-ray absorption layer and a plurality of photodiodes disposed in a...
US-9,520,438 Electromagnetic wave detecting element
The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and...
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