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Patent # Description
US-9,525,036 Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recess
An semiconductor device is provided. A fin is disposed on a substrate, extending in a lengthwise direction. A first recess is disposed on a sidewall of the fin...
US-9,525,035 Vertical high-voltage MOS transistor and method of forming the same
A vertical, high-voltage MOS transistor, which has a source region, a body contact region, and a number of trenches structures with field plates, and a method...
US-9,525,034 Semiconductor device and manufacturing method thereof
An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as...
US-9,525,033 Methods relating to a group III HFET with a graded barrier layer
A device and a method of making said wherein the device wherein the device has a group III-nitride buffer deposited on a substrate; and a group III-nitride...
US-9,525,032 Doped aluminum nitride crystals and methods of making them
Fabrication of doped AlN crystals and/or AlGaN epitaxial layers with high conductivity and mobility is accomplished by, for example, forming mixed crystals...
US-9,525,031 Epitaxial channel
Some embodiments of the present disclosure relate to an epitaxially grown replacement channel region within a transistor, which mitigates the variations within...
US-9,525,030 Semiconductor device and method for growing semiconductor crystal
A semiconductor device according to the embodiment comprises a base substrate; patterns on the base substrate; and an epitaxial layer on the base substrate,...
US-9,525,029 Insulated gate bipolar transistor device, semiconductor device and method for forming said devices
An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure. Further,...
US-9,525,028 Dual-well metal oxide semiconductor (MOS) device and manufacturing method thereof
A dual-well metal oxide semiconductor (MOS) device includes: a substrate, an epitaxial layer, a first conductive type well, a first conductive type body region,...
US-9,525,027 Lateral bipolar junction transistor having graded SiGe base
A lateral bipolar junction transistor is fabricated using a semiconductor-on-insulator substrate. The transistor includes a germanium gradient within a doped...
US-9,525,026 Method of forming an epitaxial semiconductor layer in a recess and a semiconductor device having the same
A method of manufacturing a semiconductor device may include: etching a recess in a semiconductor substrate, where the etching produces a metal residue over a...
US-9,525,025 Semiconductor device having air gap and method for manufacturing the same, memory cell having the same and...
A semiconductor device including a substrate including an active region and a device isolation region that isolates the active region, and a buried bit line and...
US-9,525,024 Methods for introducing carbon to a semiconductor structure and structures formed thereby
An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing...
US-9,525,023 Semiconductor device
One embodiment of the present invention is a semiconductor device which includes a gate electrode; a gate insulating film formed to cover the gate electrode; a...
US-9,525,022 MIM capacitor
Various embodiments provide an MIM capacitor and fabrication method thereof. An exemplary MIM capacitor can include a dielectric layer disposed over a substrate...
US-9,525,021 Methods and apparatus for high voltage integrated circuit capacitors
High voltage integrated circuit capacitors are disclosed. In an example arrangement, A capacitor structure includes a semiconductor substrate; a bottom plate...
US-9,525,020 Semiconductor device and method for forming the same
A semiconductor device including a substrate having an isolation structure therein is disclosed. A capacitor is disposed on the isolation structure and includes...
US-9,525,019 Method for manufacturing a polycrystalline dielectric layer
A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline...
US-9,525,018 OLED display panel and manufacturing method thereof
An OLED display panel is provided which can control the problem of shedding even in high definition panels. Metal wiring 5 which conducts with an earth line of...
US-9,525,017 Display device
Provided is a display device with high resolution, high display quality, or high aperture ratio. A pixel includes three subpixels and is electrically connected...
US-9,525,016 Organic light emitting display devices and methods of manufacturing organic light emitting display devices
An organic light emitting display device includes a substrate including a plurality of pixel regions and a plurality of transparent regions, thin film...
US-9,525,015 Organic light emitting diode device and method for fabricating the same
Disclosed are an organic light emitting diode device, and a method for fabricating the same. The organic light emitting diode device comprises a non-active area...
US-9,525,014 Organic light emitting display device
An organic light emitting display device includes a first substrate having a plurality of organic light emitting structures thereon, a second substrate facing...
US-9,525,013 Organic light-emitting diode display device and its manufacturing method
The present disclosure provides an OLED display device and its manufacturing method. The OLED display device includes an anode layer, a cathode layer, and a...
US-9,525,012 Curved display device
A curved display device including a display area and a non-display area is provided. The curved display device includes a first direction area configured to...
US-9,525,011 Input and output device having touch sensor element as input device and display device
A flexible input and output device in which defects due to a crack is reduced. The input and output device includes a first flexible substrate, a second...
US-9,525,010 Organic light-emitting diode display unit, driving method thereof and display device
An organic light-emitting diode display unit, a driving method thereof and a display device are disclosed. At least part of pixel units are pixel units each...
US-9,525,009 Organic electroluminescent element and organic electroluminescent device
The objection of invention is to provide an organic electroluminescent element having an excellent current-voltage property. The organic electroluminescent...
US-9,525,008 RRAM devices
Resistive random-access memory (RRAM) devices and methods of manufacturing thereof are disclosed. A device comprises a first transparent conducting oxide (TCO)...
US-9,525,007 Phase change memory device with voltage control elements
A phase change memory device with reduced programming disturbance and its operation are described. The phase change memory includes an array with word lines and...
US-9,525,006 Stacked type image sensor including color separation element and image pickup apparatus including the stacked...
A stacked type image sensor with improved optical characteristics, which may result from a color separation element, and an image pickup apparatus including...
US-9,525,005 Image sensor device, CIS structure, and method for forming the same
A CIS structure is provided, including a translucent structure, a reflective structure surrounding the translucent structure, and a micro lens disposed on a...
US-9,525,004 Solid-state imaging device, manufacturing method of solid-state imaging device, manufacturing method of...
A solid-state imaging device has a sensor substrate having a pixel region on which photoelectric converters are arrayed; a driving circuit provided on a front...
US-9,525,003 Structure and method for 3D image sensor
The present disclosure provides a device having a doped active region disposed in a substrate. The doped active region having an elongate shape and extends in a...
US-9,525,002 Image sensor device with sensing surface cavity and related methods
An image sensor device may include an interconnect layer, an image sensor IC carried by the interconnect layer and having an image sensing surface, and...
US-9,525,001 Semiconductor device and manufacturing method thereof
A semiconductor device includes a first substrate, a second substrate, a plurality of through vias (TVs), and a plurality of conductive caps. The first...
US-9,525,000 Solid-state imaging device, solid-state imaging device manufacturing method, electronic device, and lens array
A solid-state imaging device includes: multiple micro lenses, which are disposed in each of a first direction and a second direction orthogonal to the first...
US-9,524,999 Imaging device and electronic apparatus incorporating a phase difference pixel
A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically...
US-9,524,998 Image sensor having pixels capable of detecting phase differences with each pixel includes dual color filter...
An image sensor includes a plurality of pixels arranged in two dimensions, wherein at least one pixel includes: a photoelectric conversion layer formed in a...
US-9,524,997 Semiconductor device having seal ring
A semiconductor device includes a thermal conductor formed on and thermally connected to the seal ring. The thermal conductor is spatially spaced from the...
US-9,524,996 Image sensor including a casing to seal the optical system
An image sensor includes: a lens configured to focus light after passing through or reflected by an object to be read and passing through a first transparent...
US-9,524,995 Image sensors including conductive pixel separation structures
An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench...
US-9,524,994 Image sensor pixels with multiple compartments
An image sensor with an array of pixels is provided. In order to achieve high image quality, it may be desirable to improve well capacity of individual pixels...
US-9,524,993 Semiconductor device having a transistor with an oxide semiconductor layer between a first gate electrode and a...
A transistor a gate of which, one of a source and a drain of which, and the other are electrically connected to a selection signal line, an output signal line,...
US-9,524,992 Thin film transistor array panel and manufacturing method thereof
A thin film transistor array panel and a manufacturing method thereof according to an exemplary embodiment of the present invention form a contact hole in a...
US-9,524,991 Array substrate and manufacturing method thereof and display apparatus
An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base...
US-9,524,990 Display device
A display device including: a substrate including first and second sides which face and are parallel to each other, and third and fourth sides which are...
US-9,524,989 Array substrate and method of manufacturing the same, and liquid crystal display screen
Embodiments of the present invention disclose an array substrate and a method of manufacturing the same, and a liquid crystal display screen. The array...
US-9,524,988 Array substrate, manufacturing method thereof, liquid crystal panel and liquid crystal display
An array substrate, a manufacturing method thereof, a liquid crystal panel and a liquid crystal display. An array substrate, comprises: a substrate (11), gate...
US-9,524,987 Fin-shaped structure and method thereof
A method of forming a fin-shaped structure includes the following steps. A substrate having at least a fin structure thereon is provided. A liner is formed on...
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