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Patent # Description
US-9,530,935 Method for fabricating a plurality of opto-electronic semiconductor chips, and opto-electronic semiconductor chip
A method for fabricating optoelectronic semiconductor chips and optoelectronic semiconductor chips are disclosed. In embodiments the method comprises depositing...
US-9,530,934 Light-emitting device
A light-emitting device includes a semiconductor stack; a pad electrode comprising a periphery disposed on the semiconductor stack; and a finger electrode...
US-9,530,933 GaN base light-emitting diode and manufacturing method therefor using mechanical post-processing
Disclosed are GaN based light emitting devices and methods of manufacturing the same using post-mechanical treatment. The GaN based light emitting device...
US-9,530,932 Nitride semiconductor light-emitting device and method for producing the same
A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first ...
US-9,530,931 Light-emitting semiconductor chip
A semiconductor chip includes a semiconductor body with a semiconductor layer sequence. An active region intended for generating radiation is arranged between...
US-9,530,930 Method of fabricating semiconductor devices
Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of...
US-9,530,929 Lift-off method
A lift-off method transfers an optical device layer in an optical device wafer to a transfer substrate. The optical device layer is formed on the front side of...
US-9,530,928 Semiconductor nanocrystal probes for biological applications and process for making and using such probes
A semiconductor nanocrystal compound and probe are described. The compound is capable of linking to one or more affinity molecules. The compound comprises (1)...
US-9,530,927 Light emitting devices with built-in chromaticity conversion and methods of manufacturing
Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one...
US-9,530,926 Automated flexible solar cell fabrication and interconnection utilizing rolls expanded metallic mesh
A method for forming photovoltaic cells comprises providing a first roll of a photovoltaic material and a second roll of an expanded metallic mesh. The...
US-9,530,925 Conductive composition and method for making conductive features on thin film PV cells
A method for forming a conductive feature. The method includes providing a substrate and a conductive composition. The conductive composition includes metal...
US-9,530,924 Method of manufacturing solar cell module
An aspect of the invention is a method of manufacturing a solar cell module in which wiring members are electrically connected to front and back electrodes on...
US-9,530,923 Ion implantation of dopants for forming spatially located diffusion regions of solar cells
Diffusion regions of a solar cell are formed using a blanket layer of film that is doped with dopants of a first conductivity type. Dopants of a second...
US-9,530,922 Overvoltage protection components in an optoelectronic circuit on SOI
An overvoltage protection component may be in a SOI layer, a portion of the SOI layer forming the core of an optical waveguide. This component may be made of...
US-9,530,921 Multi-junction solar cell
A multi-junction solar cell comprising a high-crystalline silicon solar cell and a high-crystalline germanium solar cell. The high-crystalline silicon solar...
US-9,530,920 Photoelectric conversion device
A photoelectric conversion device which is a semiconductor device comprising a first conductive layer having a first conductivity type; a second conductive...
US-9,530,919 Solar cell module
A solar cell module includes a solar cell string including solar cells disposed in an arrangement direction and at least two wiring members provided to extend...
US-9,530,918 Solar battery rectangular conductor, method for fabricating same and solar battery lead wire
A rectangular conductor for a solar battery and a lead wire for a solar battery, in which warping or damaging of a silicon crystal wafer is hard to occur at the...
US-9,530,917 Polyester film, solar cell backsheet, and solar cell
An object of the present invention is to provide a polyester film whose wet heat resistance is not reduced even when incorporated into a solar cell backsheet or...
US-9,530,916 Corrugated panel mounting bracket
A mounting bracket (210) for a corrugated panel (202) is disclosed. The mounting bracket (210) includes an upper wall (216) in the form of an at least...
US-9,530,915 Solar panel and timepiece including solar panel
A solar panel of the present invention, above which pointers mounted on a pointer shaft inserted into a through hole provided at the center of the solar panel...
US-9,530,914 Method for manufacturing solar cells having nano-micro composite structure on silicon substrate and solar cells...
One embodiment of the present invention relates to a method for manufacturing solar cells having a nano-micro composite structure on a silicon substrate and...
US-9,530,913 Solar cell
Provided is a solar cell having improved photoelectric conversion efficiency. The solar cell (1) contains: a substrate (10) comprising a semiconductor material...
US-9,530,912 Three-dimensional patterning methods and related devices
Three-dimensional patterning methods of a three-dimensional microstructure, such as a semiconductor wire array, are described, in conjunction with etching...
US-9,530,911 Solar cell structures for improved current generation and collection
In one aspect, optoelectronic devices are described herein. In some implementations, an optoelectronic device comprises a photovoltaic cell. The photovoltaic...
US-9,530,910 Fusion formable silica and sodium containing glasses
Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic...
US-9,530,909 Photodiode and ultraviolet sensor
A p-type semiconductor layer containing a solid solution of NiO and ZnO as a principal component is joined to an n-type semiconductor layer containing ZnO as a...
US-9,530,908 Hybrid vapor phase-solution phase growth techniques for improved CZT(S,Se) photovoltaic device performance
A hybrid vapor phase-solution phase CZT(S,Se) growth technique is provided. In one aspect, a method of forming a kesterite absorber material on a substrate...
US-9,530,907 Optical module and method of manufacturing optical module
An optical module includes an optical semiconductor device and a stem including a lead terminal configured to perform at least one of transmitting an electric...
US-9,530,906 Methods to introduce sub-micrometer, symmetry-breaking surface corrugation to silicon substrates to increase...
Provided is a method for fabricating a nanopatterned surface. The method includes forming a mask on a substrate, patterning the substrate to include a plurality...
US-9,530,905 Microstructure enhanced absorption photosensitive devices
Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes,...
US-9,530,904 High temerature, hermetically sealed, triaxial mount for a light sensitive element
A sensor assembly for a flame sensor apparatus includes a photodiode that generates a current. The sensor assembly includes a seal assembly supporting the...
US-9,530,903 Solar cell manufacturing method, solar cell module manufacturing method, and solar cell module
This solar cell module (10) is manufactured by connecting in series with a wiring material (15) multiple solar cells including at least two types of solar cells...
US-9,530,902 Two-dimensional guard structure and a radiation detector with the same
A semiconductor device comprises a piece of semiconductor material. On a surface of said piece of semiconductor material, a number of electrodes exist and are...
US-9,530,901 Decoupling finFET capacitors
A semiconductor device including field-effect transistors (finFETs) and fin capacitors are formed on a silicon substrate. The fin capacitors include silicon...
US-9,530,900 Schottky diode and method for manufacturing the same
A Schottky diode is provided, which includes a well of a first conductive type and a lightly doped region of a second conductive type on the well, wherein the...
US-9,530,899 Semiconductor memory device and method of manufacturing the same
A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes insulation layers and gate electrodes alternately...
US-9,530,898 Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof
Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor...
US-9,530,897 Semiconductor device and manufacturing method thereof
Provided are a transistor which has electrical characteristics requisite for its purpose and uses an oxide semiconductor layer and a semiconductor device...
US-9,530,896 Display device using an oxide semiconductor
Provided are a reliable high performance thin film transistor and a reliable high performance display device. The display device has: a gate electrode which is...
US-9,530,895 Semiconductor device
To suppress a decrease in on-state current in a semiconductor device including an oxide semiconductor. A semiconductor device includes an insulating film...
US-9,530,894 Semiconductor device
A semiconductor device including an oxide semiconductor in which on-state current is high is provided. The semiconductor device includes a first transistor...
US-9,530,893 Semiconductor device, measurement apparatus, and measurement method of relative permittivity
The field of an oxide semiconductor has been attracted attention in recent years. Therefore, the correlation between electric characteristics of a transistor...
US-9,530,892 Semiconductor device and method for manufacturing the same
A semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, a multilayer film...
US-9,530,891 Semiconductor device and method of manufacturing the same
A semiconductor device of an embodiment includes: an insulating film including: a first region extending in a first direction; second and third regions arranged...
US-9,530,890 Parasitic capacitance reduction
A method of making a semiconductor device includes forming a gate on a substrate; removing an end portion of the gate to form a recess at an end of the gate;...
US-9,530,889 Semiconductor device and manufacturing method thereof
A fin structure including a well layer, an oxide layer over the well layer and a channel layer over the oxide layer is formed. An isolation insulating layer is...
US-9,530,888 MOCVD growth of highly mismatched III-V CMOS channel materials on silicon substrates
Embodiments of the present disclosure generally relate to a semiconductor device including layers of group III-V semiconductor materials. In one embodiment, the...
US-9,530,887 Fin-type field effect transistor device and manufacturing method thereof
A fin-type field effect transistor device including a substrate, a gate stack structure, spacers and source and drain regions is described. The spacers includes...
US-9,530,886 Semiconductor device with epitaxial structure and manufacturing method thereof
A semiconductor device includes a substrate, a gate structure, a spacer, and a plurality of hyper-sigma (.SIGMA.) shaped epitaxial stressors. The substrate...
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