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Patent # Description
US-9,530,885 Normally on high voltage switch
In some embodiments, a normally on high voltage switch device ("normally on switch device") incorporates a trench gate terminal and buried doped gate region. In...
US-9,530,884 Method of manufacturing a semiconductor device and semiconductor device
A method of manufacturing a semiconductor device including a transistor comprises forming field plate trenches in a main surface of a semiconductor substrate, a...
US-9,530,883 Insulated gate semiconductor device having a shield electrode structure and method
A semiconductor device includes a semiconductor region with a charge balance region on a junction blocking region, which has a lower doping concentration. A...
US-9,530,882 Trench MOSFET with shielded gate and diffused drift region
A trench MOSFET with diffused drift region and closed cell layout having shielded gate is disclosed, wherein closed gate trenches surrounding a deep trench in...
US-9,530,881 Semiconductor device, and method of manufacturing the same
A semiconductor device includes a first-conductive-type first semiconductor layer having a first surface and an opposing second surface. A first-conductive-type...
US-9,530,880 DMOS transistor with trench schottky diode
A DMOS transistor integrates a trench Schottky diode into the body contact of the transistor where the body region surrounding the Schottky metal layer forms a...
US-9,530,879 Semiconductor device and field effect transistor with controllable threshold voltage
A semiconductor device including a field effect transistor including a substrate, a lower barrier layer provided on the substrate, a channel layer provided on...
US-9,530,878 III-N material structure for gate-recessed transistors
III-N transistors with recessed gates. An epitaxial stack includes a doped III-N source/drain layer and a III-N etch stop layer disposed between a the...
US-9,530,877 Enhancement mode III-nitride transistor
According to one embodiment, a III-nitride transistor includes a conduction channel formed between first and second III-nitride bodies, the conduction channel...
US-9,530,876 Strained semiconductor nanowire
At least one semiconductor nanowire laterally abutted by a pair of semiconductor pad portions is formed over an insulator layer. Portions of the insulator layer...
US-9,530,875 High-voltage vertical power component
A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the...
US-9,530,874 Semiconductor device
A semiconductor device includes a first semiconductor region of a second conductivity type, and a second semiconductor region of a first conductivity type. A...
US-9,530,873 Semiconductor adiabatic qubits
A quantum computing device that includes a plurality of semiconductor adiabatic qubits is described herein. The qubits are programmed with local biases and...
US-9,530,872 Semiconductor element and method for manufacturing the same
An object is to provide a thin film transistor and a method for manufacturing the thin film transistor including an oxide semiconductor with a controlled...
US-9,530,871 Method for fabricating a semiconductor device
A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon;...
US-9,530,870 Methods of fabricating a semiconductor device
Provided is a method of fabricating a semiconductor device. The method includes forming a gate pattern on a semiconductor substrate, injecting amorphization...
US-9,530,869 Methods of forming embedded source/drain regions on finFET devices
One illustrative method disclosed herein includes, among other things, forming a layer of insulating material in the source/drain regions of the device, wherein...
US-9,530,868 Fin structure and method of forming the same
A fin structure and a method of forming the same, where the fin structure includes a fin and a protrusion having irregular shape. The fin and the protrusion are...
US-9,530,867 Method for manufacturing a super-junction structures having implanted regions surrounding an N epitaxial layer...
A method for manufacturing a super junction trench MOSFET by growing a first epitaxial layer of a first conductivity type upon a heavily doped substrate layer...
US-9,530,866 Methods of forming vertical transistor devices with self-aligned top source/drain conductive contacts
Forming a first sidewall spacer adjacent a vertically oriented channel semiconductor structure ("VCS structure`) and adjacent a cap layer, performing at least...
US-9,530,865 Strained MOS device and methods for forming the same
A semiconductor structure includes a semiconductor substrate having a top surface; a gate stack on the semiconductor substrate; and a stressor in the...
US-9,530,864 Junction overlap control in a semiconductor device using a sacrificial spacer layer
Approaches for providing junction overlap control in a semiconductor device are provided. Specifically, at least one approach includes: providing a gate over a...
US-9,530,863 Methods of forming vertical transistor devices with self-aligned replacement gate structures
One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure, forming a layer of a...
US-9,530,862 Semiconductor device having metal gate and manufacturing method thereof
A manufacturing method of semiconductor devices having metal gate includes following steps. A substrate having a first semiconductor device and a second...
US-9,530,861 Method for manufacturing semiconductor device
The present invention discloses a method for manufacturing a semiconductor device, comprising the steps of: forming a dummy gate stack structure on a substrate,...
US-9,530,860 III-V MOSFETs with halo-doped bottom barrier layer
Techniques for controlling short channel effects in III-V MOSFETs through the use of a halo-doped bottom (III-V) barrier layer are provided. In one aspect, a...
US-9,530,859 Semiconductor device and manufacturing method of same
A manufacturing method for a semiconductor device including a drift layer; a body layer contacting a front surface of the drift layer; an emitter layer provided...
US-9,530,858 Nitride semiconductor device and method of manufacturing the same
Disclosed are an npn-type bipolar transistor as a nitride semiconductor device having good characteristics, and a method of manufacturing the same. A so-called...
US-9,530,857 Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench...
A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined...
US-9,530,856 Semiconductor device and method for manufacturing the same
A novel semiconductor device with a transistor using an oxide semiconductor film, in which a conductive film including Cu is used as a wiring or the like, is...
US-9,530,855 Semiconductor device with polycrystalline silicon film
This semiconductor device comprises: a gate insulating film provided on a surface of a channel layer; a gate electrode provided on an upper surface of the gate...
US-9,530,854 Organic light emitting display apparatus and method of manufacturing the same
An organic light emitting display includes a pixel circuit to supply current to an organic light emitting device. The pixel circuit includes a switching...
US-9,530,853 Semiconductor device with reduced leakage current and method for making the same
A semiconductor device with reduced leakage current and a method of making the same is disclosed. The semiconductor device includes a substrate having a device...
US-9,530,852 Semiconductor device and manufacturing method thereof
It is an object to provide a semiconductor device in which a short-channel effect is suppressed and miniaturization is achieved, and a manufacturing method...
US-9,530,851 Semiconductor device and manufacturing methods thereof
The present invention provides a semiconductor device, including at least two gate structures, and each gate structure includes a gate, a spacer and a...
US-9,530,850 Semiconductor device with stripe-shaped trench gate structures and gate connector structure
A semiconductor device includes a transistor cell with a stripe-shaped trench gate structure that extends from a first surface into a semiconductor body. A gate...
US-9,530,849 Transistor having dual work function buried gate electrode and method for fabricating the same
A transistor having a source region and a drain region which are separately formed in a substrate, a trench which is defined in the substrate between the source...
US-9,530,848 Method of manufacturing transistor and semiconductor device including the same
Provided is a semiconductor device including a pillar, a gate electrode having a first conductive pattern surrounding the pillar and a plurality of second...
US-9,530,847 Semiconductor device with field electrode and field dielectric
A semiconductor device includes a field electrode structure that includes a field electrode and a field dielectric surrounding the field electrode. The field...
US-9,530,846 Nitride semiconductor substrate
A solution is formation of a nitride semiconductor layer on one principal plane of a single crystal substrate through a first layer. Upon selecting arbitrary...
US-9,530,845 Frequency multiplier based on a low dimensional semiconductor structure
A frequency multiplier based on a low dimensional semiconductor structure, including an insulating substrate layer, a semiconductor conducting layer arranged on...
US-9,530,844 Transistor structures having reduced electrical field at the gate oxide and methods for making same
A transistor device having reduced electrical field at the gate oxide interface is disclosed. In one embodiment, the transistor device comprises a gate, a...
US-9,530,843 FinFET having an epitaxially grown semiconductor on the fin in the channel region
A planar semiconductor device including a semiconductor on insulator (SOI) substrate with source and drain portions having a thickness of less than 10 nm that...
US-9,530,842 Semiconductor devices
Some embodiments include a device having an n-type diffusion region, and having a boron-doped region within the n-type diffusion region. The boron-doped region...
US-9,530,841 Gate-all-around nanowire field-effect transistor device
A gate-all-around (GAA) nanowire field-effect transistor (FET) device includes a semiconductor substrate, a nanowire on the semiconductor substrate, a gate...
US-9,530,840 Semiconductor device including a wall oxide film and method for forming the same
A semiconductor device includes an oxide film structure having different thicknesses depending on where the oxide film structure is formed. In the semiconductor...
US-9,530,839 Semiconductor device and manufacturing method of semiconductor device
According to one embodiment, a semiconductor device includes a semiconductor substrate made of a first semiconductor material, an element isolation insulating...
US-9,530,838 Semiconductor device and manufacturing method for the same
To improve characteristics of a semiconductor device (vertical power MOSFET). A spiral p-type column region having a corner is formed in a peripheral region...
US-9,530,837 Integrated circuitry and methods of forming transistors
Some embodiments include integrated circuits having first and second transistors. The first transistor is wider than the second transistor. The first and second...
US-9,530,836 Semiconductor apparatus
A semiconductor apparatus includes a semiconductor substrate including a device region and a peripheral region. The peripheral region includes guard rings. A...
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