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Vertical tunneling field-effect transistor cell and fabricating the same
A tunneling field-effect transistor (TFET) device is disclosed. A frustoconical protrusion structure is disposed over a substrate and protruding out of the...
Trench schottky rectifier device and method for manufacturing the same
A method for fabricating a trench Schottky rectifier device is provided. At first, a plurality of trenched are formed in a substrate of a first conductivity...
Ferroelectric devices including a layer having two or more stable
Ferroelectric semiconductor devices are provided by including a ferroelectric layer in the device that is made of a material that is not ferroelectric in bulk....
FET device with tuned gate work function
A method of forming a semiconductor device is provided including forming a gate structure comprising a metal-containing layer over a semiconductor layer and...
Metal-oxide-semiconductor field-effect transistor with
metal-insulator-semiconductor contact structure to...
A method includes depositing a first metal layer on a native SiO.sub.2 layer that is disposed on at least one of a source and a drain of a ...
Trench power MOSFET and manufacturing method thereof
A trench power MOSFET and a manufacturing method thereof are provided. The gate of the trench power MOSFET includes an upper doped region, a lower doped region...
Semiconductor device comprising a transistor gate having multiple
vertically oriented sidewalls
A method used in fabrication of a recessed access device transistor gate has increased tolerance for mask misalignment. One embodiment of the invention...
Three-dimensional semiconductor memory devices and methods of fabricating
Three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor devices include an electrode structure...
Self-aligned split gate flash memory
The present disclosure relates to a self-aligned split gate memory cell, and an associated method. The self-aligned split gate memory cell has cuboid shaped...
Semiconductor devices including contact patterns having a rising portion
and a recessed portion
Semiconductor devices may include a gate pattern and a contact pattern disposed on an active region. The contact pattern may include a recessed portion near the...
Recessed ohmic contacts in a III-N device
A device includes a III-N layer having an upper side and a lower side, the lower side being opposite the upper side, and at least one conductive contact on the...
Gate structures for III-N devices
A semiconductor device includes a III-N layer, a plurality of parallel conductive fingers on the III-N layer, an insulator layer over the III-N layer, and a...
Heat spreader on GaN semiconductor device
A semiconductor device comprises: a substrate; a multilayer semiconductor layer located on the substrate; a source located on the multilayer semiconductor...
Method for forming via profile of interconnect structure of semiconductor
A method for forming the semiconductor device structure is provided. The method includes forming a first metal layer over a substrate and forming a dielectric...
Electrode structure of a transistor, and pixel structure and display
apparatus comprising the same
An electrode structure of a transistor, and a pixel structure and a display apparatus comprising the electrode structure of the transistor are disclosed. The...
Source/drain regions for high electron mobility transistors (HEMT) and
methods of forming same
An embodiment high electron mobility transistor (HEMT) includes a gate electrode over a semiconductor substrate and a multi-layer semiconductor cap over the...
Reverse conducting insulated gate bipolar transistor
A semiconductor layer of a reverse conducting insulated gate bipolar transistor is provided with a drift region of a first conductive type, a body region of a...
Semiconductor device comprising a field electrode
A semiconductor device includes a gate electrode adjacent to a body region in a semiconductor substrate. The semiconductor device further includes a field...
Power semiconductor device having field plate electrode
A semiconductor device includes first to third semiconductor regions, first to fourth electrodes and a first insulating film. The first insulating film is...
Semiconductor substrate and a method of manufacturing the same
The semiconductor substrate includes a high-ohmic semiconductor material with a conduction band edge and a valence band edge, separated by a bandgap, wherein...
P-type oxide, composition for producing p-type oxide, method for producing
p-type oxide, semiconductor element,...
To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in...
Nitride semiconductor substrate
A nitride semiconductor substrate is provided which is suitable for a high withstand voltage power device and prevents a warp and a crack from generating in a...
Substrate with silicon carbide film, semiconductor device, and method for
producing substrate with silicon...
A substrate with a silicon carbide film includes a silicon substrate, a SiC film, and a mask 4. The SiC film has a film 31 including openings 35 on the silicon...
Method for making a sensor device using a graphene layer
A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The...
Body contact layouts for semiconductor structures
Body contact layouts for semiconductor structures are disclosed. In at least one exemplary embodiment, a semiconductor structure comprises: a plurality of gates...
FinFET transistor comprising portions of SiGe with a crystal orientation
FinFET transistor comprising at least: one fin that forms a channel, a source and a drain, comprising an alternating stack of first portions of silicon-rich...
Semiconductor device and method of fabricating the same
A semiconductor device may include a strain relaxed buffer layer provided on a substrate to contain silicon germanium, a semiconductor pattern provided on the...
Nitride semiconductor device comprising nitride semiconductor regrowth
A nitride semiconductor device according to one embodiment of the present disclosure includes: a substrate; a first nitride semiconductor layer supported by the...
Semiconductor device, method of manufacturing the same, and power module
A semiconductor device includes an n-type drain layer, an n-type base layer provided on the n-type drain layer, a p-type base layer and an n-type source layer...
Silicon nanowire device and method for its manufacture
There is provided an electronic device and a method for its manufacture. The device comprises an elongate silicon nanowire less than 0.5 .mu.m in ...
Semiconductor device and method for manufacturing the same
A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel...
MOSFET with ultra low drain leakage
A semiconductor device includes a monocrystalline substrate configured to form a channel region between two recesses in the substrate. A gate conductor is...
Semiconductor device and method of manufacturing same
A semiconductor device has a deep layer with a higher impurity concentration than that of a super junction structure. The deep layer is formed from a position...
Vertical power MOSFET
Vertical power MOSFETs having a super junction are devices capable of having a lower on resistance than other vertical power MOSFETs. Although they have the...
Semiconductor device having a plurality of electric field relaxation
layers and method for manufacturing same
A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of...
Gate pad and gate feed breakdown voltage enhancement
A semiconductor chip includes a semiconductor layer having first and second opposing main surfaces. A plurality of MOSFET cells are at least partially formed in...
Interfacial materials for use in semiconductor structures and related
A method of forming a semiconductor structure. The method comprises forming a high-k dielectric material, forming a continuous interfacial material over the...
High density vertically integrated FEOL MIM capacitor
A metal-insulator-metal (MIM) capacitor is provided on a surface of an insulator layer that is located on a handle substrate. The MIM capacitor includes a first...
Semiconductor device including a resistor metallic layer and method of
forming the same
A semiconductor device including a resistor metallic layer and method forming the same. In one embodiment, the semiconductor device includes a source region and...
Semiconductor device having a rectifying element connected to a pixel of a
When writing a signal current from a current source to a current source circuit, noise occurs in some cases in a wiring through which a current flows, which may...
Organic light emitting diode display
An organic light emitting diode display includes a display substrate, a sealing member disposed to face the display substrate, a sealant disposed between the...
Organic thin film transistor merged with a light emitting diode using an
accumulation layer as electrode
A novel light-emitting device includes an organic thin-film structure that is merged with an organic light-emitting diode structure by utilizing a part of the...
OLED array substrate
The present invention provides an OLED array substrate, a manufacturing method of the same, a display panel, and a display device, and relates to the field of...
Display device having a light emitting layer on the auxiliary layer
A display device, in which self-luminous elements are arranged, prevents a leakage current through a common layer, provided for the self-luminous elements and...
Method of making a semiconductor lighting emitting device that prevents
defect of the mask without increasing steps
As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in...
Organic light emitting device and manufacturing method thereof
An organic light emitting diode (OLED) display with an improved light efficiency and a method of manufacturing the OLED display are disclosed. The OLED display...
In a display device including an device substrate arranged with a plurality of pixels arranged with a light emitting device, a color filter layer with different...
Display device and method of manufacturing the same
According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate formed such that a first resin layer is formed on...
Organic light-emitting display device
An organic light-emitting display device comprising a substrate; an insulating layer disposed on the substrate; a plurality of bottom electrodes arranged on the...
Method for producing semiconductor device
A method for producing a semiconductor device includes forming a fin-shaped semiconductor layer on a semiconductor substrate and a first pillar-shaped...