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Patent # Description
US-9,543,486 LED package with reflecting cup
The present disclosure provides a light emitting diode package which includes a plurality of electrodes, an LED die, a reflecting cup, a reflecting layer, and a...
US-9,543,485 Light emitting device
A light emitting device includes a semiconductor structure layer including a first conductive semiconductor layer, an active layer on the first conductive...
US-9,543,484 Semiconductor light emitting device and method for manufacturing same
According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer including a first semiconductor layer, a second semiconductor...
US-9,543,483 Epitaxy base and light-emitting device
An epitaxy base adapted to form a light-emitting device on is provided. The epitaxy base includes a substrate and a patterned wavelength conversion structure...
US-9,543,482 LED package
The present invention is related to a light emitting diode (LED) package. The LED package includes a blue LED chip, a first electrode, a second electrode and a...
US-9,543,481 Semiconductor nanoparticle-based materials
The present invention relates to a primary particle comprised of a primary matrix material containing a population of semiconductor nanoparticles, wherein each...
US-9,543,480 Ceramic composite for light conversion and method for manufacture thereof
A ceramic composite for light conversion comprising a solidified body in which crystalline phases of oxides are three-dimensionally entangled and a method for...
US-9,543,479 Method for producing an optoelectronic component and optoelectronic component produced in such a way
A semiconductor chip without a substrate is provided on an electrically insulating carrier. The carrier has electrically conductive contact metallizations....
US-9,543,478 Light emitting device including a filter and a protective layer
A method according to embodiments of the invention includes providing a plurality of LEDs (60) attached to a mount (62). A filter (102) is attached to at least...
US-9,543,477 Semiconductor light-emitting device
A semiconductor light emitting device (A) includes an elongated substrate (1) formed with a through-hole (11), a first, a second and a third semiconductor light...
US-9,543,476 UV light emitting diode and method of fabricating the same
A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based...
US-9,543,475 Light emitting device and method of manufacturing the same
A light-emitting device includes a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the...
US-9,543,474 Manufacture method of making semiconductor optical device
The semiconductor optical device has a chip of semiconductor lamination having a first semiconductor layer of a first conductivity type having a first surface,...
US-9,543,473 Polycrystalline gallium-nitride self-supporting substrate and light-emitting element using same
Provided is a self-supporting polycrystalline GaN substrate composed of GaN-based single crystal grains having a specific crystal orientation in a direction...
US-9,543,472 Diode-based devices and methods for making the same
In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening...
US-9,543,471 Optoelectronic component and method for the production thereof
An optoelectronic device (10, 1010) having a semiconductor layer structure (100, 1100) comprising a first light-active layer (140) and a second light-active...
US-9,543,470 Semiconductor light emitting device
A semiconductor light emitting device includes a substrate, a reflective layer and a light emitting structure. The reflective layer includes at least two porous...
US-9,543,469 III nitride semiconductor epitaxial substrate and III nitride semiconductor light emitting device, and methods...
A III nitride semiconductor epitaxial substrate having more excellent surface flatness is provided, in which the problems of crack formation and the double...
US-9,543,468 High bandgap III-V alloys for high efficiency optoelectronics
High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one ...
US-9,543,467 Light emitting device
Disclosed is a light emitting device. The light emitting device includes a first conductive semiconductor layer, an active layer over the first conductive...
US-9,543,466 Method for forming shield tunnels in single-crystal substrates
A method of processing a single-crystal member includes setting the peak energy density of a pulsed laser beam to a value in a range from 1 TW/cm.sup.2 to 100...
US-9,543,465 Method for manufacturing light emitting device
A method for manufacturing a light emitting device has: preparing a base body which comprises a pair of connection terminals; preparing a light emitting element...
US-9,543,464 Method of making a light emitting device and a light emitting device made thereof
The method includes preparing a plurality of light-emitting units, one of the plurality of light-emitting units comprising an electrode, a light-emitting stack,...
US-9,543,463 Signal distribution in integrated circuit using optical through silicon via
An optical through silicon via is formed in a silicon substrate of an integrated circuit. A photo detector is formed within the integrated circuit and is...
US-9,543,462 Insulated-gate photoconductive semiconductor switch
This present invention provides a novel photoconductive semiconductor switch (PCSS) comprising: a semi-insulating substrate, an anode formed on the upper...
US-9,543,461 Encapsulating material for solar cell and solar cell module
An encapsulating material for solar cell that is capable of suppressing the corrosion of metal and the occurrence of yellowing at a high temperature and has...
US-9,543,460 Curable polyorganosiloxane composition for use as an encapsulant for a solar cell module
The invention relates to curable polyorganosiloxane compositions for the use as an encapsulant for a solar cell module, in particular, for the encapsulation of...
US-9,543,459 Flexible solar cell apparatus and method of fabricating the same
Disclosed are a flexible solar cell apparatus and a method of fabricating the same. The flexible solar cell apparatus includes a support substrate including an...
US-9,543,458 Full color single pixel including doublet or quadruplet Si nanowires for image sensors
An image sensor comprising a substrate and one or more of pixels thereon. The pixels have subpixels therein comprising nanowires sensitive to light of different...
US-9,543,457 Method and system for manufacturing back contacts of photovoltaic devices
A method for manufacturing a photovoltaic device includes a step of depositing one of an amorphous layer of ZnTe and a multilayer stack of Zn and Te adjacent a...
US-9,543,456 Multijunction solar cell employing extended heterojunction and step graded antireflection structures and...
Material and antireflection structure designs and methods of manufacturing are provided that produce efficient photovoltaic power conversion from single- and...
US-9,543,455 System and method for low-cost, high-efficiency solar panel power feed
A cascading regulation system connected to a number of serially connected power sources and uses multiple regulators having different cutoff voltages to provide...
US-9,543,454 Diodes with multiple junctions
A diode includes a semiconductor substrate having a surface; a first contact region disposed at the surface of the semiconductor substrate and having a first...
US-9,543,453 Semiconductor device including junction field effect transistor and method of manufacturing the same
An on-resistance of a junction FET is reduced. In a semiconductor device in an embodiment, a gate region of the junction field effect transistor includes a low...
US-9,543,452 High voltage junction field effect transistor
Provided is a semiconductor device, including: a substrate, a well region of a first conductivity type, a field region of a second conductivity type, a first...
US-9,543,451 High voltage junction field effect transistor
The present invention discloses a high voltage JFET. The high voltage JFET includes a second conductivity type drift region located on the first conductivity...
US-9,543,450 Semiconductor devices and methods for manufacturing the same
Semiconductor devices and methods for manufacturing the same are provided. In one embodiment, the method may include: forming a first shielding layer on a...
US-9,543,449 Thin film transistor and method of manufacturing the same
As source and drain wiring, a base layer and a cap layer are each formed of a MoNiNb alloy film, and a low-resistance layer is formed of Cu. The resultant...
US-9,543,448 Semiconductor structure and method of forming the same
The present invention provides a semiconductor structure, including a base, a patterned oxide semiconductor (OS) layer, two source/drain regions, a protective...
US-9,543,447 Oxynitride semiconductor thin film
The purpose of the present invention is to provide an oxide semiconductor thin film, which has relatively high carrier mobility and is suitable as a channel...
US-9,543,445 Semiconductor device with oxide semiconductor layer
A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor...
US-9,543,444 Oxide sputtering target, and thin film transistor using the same
An oxide sputtering target includes at least one of indium (In), zinc (Zn), tin (Sn), and gallium (Ga), and tungsten (W) in an amount from 0.005 mol % to 1 mol %.
US-9,543,443 Thin film transistor assembly, array substrate method of manufacturing the same, and display device
The present disclosure discloses a thin film transistor assembly, an array substrate and a method of manufacturing the same, and a display device including the...
US-9,543,442 Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate...
US-9,543,441 Methods, apparatus and system for fabricating high performance finFET device
At least one method, apparatus and system disclosed herein fin field effect transistor (finFET) comprising a bulbous fin head. A fin of a gate of a transistor...
US-9,543,440 High density vertical nanowire stack for field effect transistor
An alternating stack of layers of a first epitaxial semiconductor material and a second epitaxial semiconductor material is formed on a substrate. A fin stack...
US-9,543,439 Semiconductor device structure and manufacturing method thereof
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate; a gate structure over a...
US-9,543,438 Contact resistance reduction technique
An embodiment is a method of manufacturing a semiconductor device, the method including forming a first gate over a substrate, forming a recess in the substrate...
US-9,543,437 Integrated circuit with dual stress liner boundary
An integrated circuit with DSL borders perpendicular to the transistor gates primarily inside the nwell and with DSL borders parallel to the transistor gates...
US-9,543,436 Method and structure of making enhanced UTBB FDSOI devices
An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of...
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