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Patent # Description
US-9,548,435 Electronic platform comprising an ABO.sub.3 type crystal and graphene, method for its manufacture and chip...
An electronic platform comprising a substrate made of a ABO3 crystal (2) and at least one layer of a two-dimensional conducting sheet of carbon atoms (1) of a...
US-9,548,434 Wafer level packaging of electronic device
Wafer level packaging of LED devices is accomplished using a bottom wafer that includes one or more vias. A passivation layer is placed over the top surface of...
US-9,548,433 Light-emitting diode chip
A light-emitting diode chip includes at least two semiconductor bodies, each semiconductor body including at least one active area that generates radiation, a...
US-9,548,432 Light output device and method of manufacture
A light output device and manufacturing method in which an array of LEDs is embedded in an encapsulation layer. An array of cavities (or regions of different...
US-9,548,431 Ultraviolet light-emitting devices and methods
In various embodiments, an illumination device features an ultraviolet (UV) light-emitting device at least partially surrounded by an encapsulant and having a...
US-9,548,430 Method of manufacturing light emitting diode package
A method of manufacturing a light emitting diode package comprises steps of: scanning a light emitting diode chip mounted on a package substrate to acquire...
US-9,548,429 Packaging for ultraviolet optoelectronic device
A solution for packaging an optoelectronic device using an ultraviolet transparent polymer is provided. The ultraviolet transparent polymer material can be...
US-9,548,428 Light-emitting diode and fabrication method thereof
A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of...
US-9,548,427 Package structure and method for manufacturing same
The present disclosure relates to a method for manufacturing a LED package structure. First, a support plate including a top surface is provided. An annular...
US-9,548,426 Semiconductor light-emitting device
A semiconductor light-emitting device includes a light-emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second...
US-9,548,425 Light-emitting diode and application therefor
A light-emitting diode is provided to include: a transparent substrate having a first surface, a second surface, and a side surface; a first conductive...
US-9,548,424 Light emitting diode
A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor...
US-9,548,423 Light-emitting device
A light-emitting device is disclosed that includes a light-emitting stack comprising a first surface; a patterned dielectric layer formed on the first surface,...
US-9,548,422 Semiconductor light emitting device including a pad electrode spaced apart from a transparent electrode
A semiconductor light emitting device includes a light emitting structure and first and second electrodes. The light emitting structure includes first and...
US-9,548,421 Optoelectronic devices with back contact
A semiconductor structure includes an optoelectronic device located in one region of a substrate. A dielectric material is located adjacent and atop the...
US-9,548,420 Light-emitting device and manufacturing method thereof
A light-emitting device comprises a substrate comprising a top surface; a light-emitting stack formed on a portion of the top surface of the substrate; and a...
US-9,548,419 Light emitting diode chip having multi microstructure substrate surface
A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of...
US-9,548,418 Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive...
US-9,548,417 Epitaxial structure with pattern mask layers for multi-layer epitaxial buffer layer growth
An epitaxial structure including an epitaxial substrate, a first buffer layer, a first pattern mask layer, a second buffer layer and a second pattern mask...
US-9,548,416 Light emitting device and light emitting device package having the same
Disclosed is a light emitting device. The light emitting device includes a nano-structure, a first semiconductor layer on the nano-structure, an active layer on...
US-9,548,415 All-wavelength (VIS-LWIR) transparent electrical contacts and interconnects and methods of making them
A method for fabricating an optically transparent conductor including depositing a plurality of metal nanowires on a substrate, annealing or illuminating the...
US-9,548,414 Optical device based on bismuth-containing III-V compound multilayer semiconductors
Optical devices based on bismuth-containing III-V compound semiconductor materials are disclosed. The optical device includes an optically active pseudomorphic...
US-9,548,413 Microwave signal switching device, particularly of nanometric size, and electronic component incorporating such...
A device for switching an electrical signal, controlled by an optical wave and having an on state and an off state, which can be inserted into a microwave...
US-9,548,412 Solar cell module and method of fabricating the same
Disclosed are a solar cell module and a method of fabricating the same. The solar cell module includes a support substrate, solar cells at an upper portion of...
US-9,548,411 Photoelectrochemically driven self-assembly method
Various technologies described herein pertain to assembling electronic devices into a microsystem. The electronic devices are disposed in a solution. Light can...
US-9,548,410 Photovoltaic window
An apparatus for collecting solar energy, including a first panel, wherein the first panel allows at least 50% of incident light having a wavelength in the...
US-9,548,409 Solar cell having doped semiconductor heterojunction contacts
A silicon solar cell has doped amorphous silicon contacts formed on a tunnel silicon oxide layer on a surface of a silicon substrate. High temperature...
US-9,548,408 Tunneling barrier infrared detector devices
Embodiments of the present disclosure are directed to infrared detector devices incorporating a tunneling structure. In one embodiment, an infrared detector...
US-9,548,407 Solar cell and method for fabricating the same
Disclosed are a solar cell and a method for fabricating the same. The solar cell according to the embodiment includes a back electrode layer on a support...
US-9,548,406 Photoelectric conversion element and method of manufacturing the same
A photoelectric conversion element includes a first electrode, a ferroelectric layer provided on the first electrode, and a second electrode provided on the...
US-9,548,405 Solar cell
A solar cell includes a semiconductor layer, a collecting layer for collecting free charge carriers from the semiconductor layer and a buffer layer which is...
US-9,548,404 Method for fabricating anti-reflection film with anti-PID effect
Provided is a method for fabricating anti-reflection film with anti-PID effect. The method comprises: vacuuming a furnace tube, holding the temperature in the...
US-9,548,403 Solar cell and method for manufacturing the same
A solar cell according to an embodiment of the invention includes a substrate of a first conductive type, an emitter region of a second conductive type opposite...
US-9,548,402 Semiconductor radiation detector with large active area, and method for its manufacture
A semiconductor radiation detector comprises a detector chip having a front side and a back side, and a support plate on the back side of the detector chip,...
US-9,548,401 Semiconductor device
A semiconductor device includes a substrate including a first impurity diffusion region having a first doping concentration and at least one second impurity...
US-9,548,400 Method of controlling breakdown voltage of a diode having a semiconductor body
A diode includes a semiconductor body, a first emitter region of a first conductivity type, a second emitter region of a second conductivity type, a base region...
US-9,548,399 Junction field effect transistor cell with lateral channel region
A semiconductor device includes a junction field effect transistor cell with a top gate region, a lateral channel region and a buried gate region. The lateral...
US-9,548,398 NAND type variable resistance random access memory and methods
A high density NAND-type nonvolatile resistance random access storage circuit and its operations are shown herein . A unit memory cell of the circuit includes a...
US-9,548,397 Semiconductor device and method for manufacturing the same
An object is to provide a structure of a transistor which has a channel formation region formed using an oxide semiconductor and a positive threshold voltage...
US-9,548,396 Semiconductor device
A semiconductor device in which a first oxide film, a second oxide film, and a third oxide film are stacked over an insulating surface is provided. In the...
US-9,548,395 Field-effect transistor including oxide semiconductor, and memory and semiconductor circuit including the same
Provided is a field-effect transistor (FET) having small off-state current, which is used in a miniaturized semiconductor integrated circuit. The field-effect...
US-9,548,394 All 2D, high mobility, flexible, transparent thin film transistor
A two-dimensional thin film transistor and a method for manufacturing a two-dimensional thin film transistor includes layering a semiconducting channel material...
US-9,548,393 Semiconductor device comprising an insulating layer including a void
A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a...
US-9,548,392 Thin film transistor and method of manufacturing same
A method for manufacturing a thin film transistor include following steps. A substrate is provided. A gate electrode and an electrically insulating layer are...
US-9,548,391 Thin film transistor
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, a first conductive layer, a second conductive layer, an...
US-9,548,390 Semiconductor device including field effect transistor
A semiconductor device includes a fin portion protruding from a substrate. The fin portion includes a base part, an intermediate part on the base part, and a...
US-9,548,389 Semiconductor devices and methods of forming the same
According to embodiments of the inventive concept, a gate electrode is formed on a substrate, and a first spacer, a second spacer, and a third spacer are...
US-9,548,388 Forming field effect transistor device spacers
A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin,...
US-9,548,387 Semiconductor device and method of manufacturing the same
The present invention discloses a semiconductor device, comprising a plurality of fins located on a substrate and extending along a first direction; a plurality...
US-9,548,386 Structure and method for compressively strained silicon germanium fins for pFET devices and tensily strained...
A method of forming a semiconductor structure that includes a tensily strained silicon fin extending upwards from a first portion of a substrate and in an nFET...
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