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Patent # Description
US-9,548,235 Methods to reduce debonding forces on flexible semiconductor films disposed on vapor-releasing adhesives
A method comprises providing a handle substrate having a front surface and a back surface; providing a layer of flexible semiconductor material having a front...
US-9,548,234 Package substrate and flip-chip package circuit including the same
This disclosure provides a package substrate, a flip-chip package circuit and their fabrication method. The package substrate includes: a first wiring layer...
US-9,548,233 Micro device transfer head array
A micro device transfer head array and method of forming a micro device transfer array from an SOI substrate are described. In an embodiment, the micro device...
US-9,548,232 Attaching apparatus
An attaching apparatus, a substrate and a support that can be uniformly attached through an adhesive layer. The attaching apparatus is equipped with a set plate...
US-9,548,231 Robot and adaptive placement system and method
An apparatus including a drive; a movable arm assembly; a plurality of sets of end effectors; and a controller. The end effectors are connected to the drive by...
US-9,548,230 Temporary storage device, transport system, and temporary storage method
A temporary storage device transfers an article in different positions to and from an overhead travelling vehicle system and a second transport system, and...
US-9,548,229 Substrate processing apparatus, method of processing substrate, and method of manufacturing semiconductor device
The present invention shortens the time needed to decrease the oxygen concentration in a chamber to be filled with an inert gas to a desired concentration. A...
US-9,548,228 Void free tungsten fill in different sized features
Methods of depositing tungsten in different sized features on a substrate are provided herein. The methods involve depositing a first bulk layer of tungsten in...
US-9,548,227 Microwave induced plasma decapsulation using a dielectric plasma discharge tube
A microwave induced plasma decapsulation system and method for decapsulation a packaged semiconductor device applies a microwave induced plasma effluent along...
US-9,548,226 Member for semiconductor manufacturing apparatus and method for manufacturing the same
A high-frequency power supply includes a shaft bonded to one surface of a plate serving as a gas distributor plate. The plate includes a radio-frequency...
US-9,548,225 Edge bead removal apparatus and methods
An edge bead removal apparatus is provided. The edge bead removal apparatus includes a clamping unit configured to clamp a cylindrical reticle and cause the...
US-9,548,224 Method and apparatus to control surface texture modification of silicon wafers for photovoltaic cell devices
A method and apparatus to modify the surface structure of a silicon substrate or deposited silicon layer in a controllable manner using gas only in an...
US-9,548,223 Apparatus for treating surfaces of wafer-shaped articles
A device and method for processing wafer-shaped articles comprises a process chamber and a rotary chuck located within the process chamber. The rotary chuck is...
US-9,548,222 Post-CMP hybrid wafer cleaning technique
A brush-cleaning apparatus is disclosed for use in cleaning a semiconductor wafer after polishing. Embodiments of the brush-cleaning apparatus implemented with...
US-9,548,221 Method and apparatus for processing wafer-shaped articles
The wet treatment of wafer-shaped articles is improved by utilizing a droplet generator designed to produce a spray of monodisperse droplets. The droplet...
US-9,548,220 Method of fabricating semiconductor package having an interposer structure
A method of fabricating a semiconductor package is provided, including: cutting a substrate into a plurality of interposers; disposing the interposers in a...
US-9,548,219 Semiconductor package and fabrication method thereof and carrier structure
A carrier structure is provided, which includes: a metal oxide plate having opposite first and second surfaces and a plurality of through holes penetrating the...
US-9,548,218 Thermal surface treatment for reuse of wafers after epitaxial lift off
There is disclosed a method of preserving the integrity of a growth substrate in a epitaxial lift-off method, the method comprising providing a structure...
US-9,548,217 Etching method of semiconductor substrate, and method of producing semiconductor device
An etching method containing, at the time of processing a substrate having a first layer containing titanium nitride (TiN) and a second layer containing a...
US-9,548,216 Method of adjusting channel widths of semiconductive devices
A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the...
US-9,548,215 High visibility endoprosthesis and method
An endoprosthesis, a method for imaging an endoprosthesis, a method of making an endoprosthesis involve a polymeric substrate that has been modified to have...
US-9,548,214 Plasma etching method of modulating high frequency bias power to processing target object
A plasma etching method includes a first process of applying, while applying a first high frequency power to a lower electrode, a second high frequency power to...
US-9,548,213 Dielectric isolated fin with improved fin profile
A method of forming a fin structure that includes forming a plurality of fin structures from a bulk semiconductor substrate and forming a dielectric spacer on a...
US-9,548,212 Semiconductor devices and fabrication method thereof
A method is provided for fabricating a semiconductor device. The method includes providing a substrate having a device region and a peripheral region; and...
US-9,548,211 Method to selectively polish silicon carbide films
The present invention provides a method for selectively removing silicon carbide from the surface of a substrate in preference to silicon dioxide. The method...
US-9,548,210 Fabrication method of a transistor with improved field effect
Fabrication of a field-effect transistor is performed on a substrate comprising a film made from first semiconductor material, a gate dielectric covered by a...
US-9,548,209 Method for integrated circuit fabrication
Provided is an integrated circuit (IC) fabrication method. The method includes receiving a mask, the mask having a plurality of dies and receiving a wafer, the...
US-9,548,208 Method for patterning an underlying layer
A method for patterning an underlying layer is described, the method comprising providing a guiding layer on the underlying layer, the guiding layer comprising...
US-9,548,207 Method of etching a silicon substrate
A method of etching a silicon substrate, in which a depressed portion is formed by etching a first surface of the silicon substrate with ions generated in...
US-9,548,206 Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and...
Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic...
US-9,548,205 Method of manufacturing a semiconductor device
A method of manufacturing a semiconductor device that reduces degradation of device properties includes forming an impurity region in a surface layer of a...
US-9,548,204 Semiconductor device, manufacturing method of the same and method of suppressing decrease of flat band voltage
There is provided a semiconductor device comprising a semiconductor layer that is made of a gallium-containing group III-V compound; and a first insulating film...
US-9,548,203 Semiconductor and method of fabricating the same
Provided is a semiconductor and method of manufacturing the same, and a method of forming even doping concentration of respective semiconductor device when...
US-9,548,202 Method for bonding by means of molecular adhesion
The disclosure relates to a method of bonding by molecular adhesion comprising the positioning of a first wafer and of a second wafer within a hermetically...
US-9,548,201 Self-aligned multiple spacer patterning schemes for advanced nanometer technology
The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension...
US-9,548,200 Variable frequency microwave (VFM) processes and applications in semiconductor thin film fabrications
Methods and apparatus for processing a substrate are described herein. A vacuum multi-chamber deposition tool can include a degas chamber with both a heating...
US-9,548,199 Method of forming a thin film that eliminates air bubbles
A method, which forms an air-bubble-free thin film with a high-viscosity fluid resin, initially dispenses the fluid resin on an outer region of a semiconductor...
US-9,548,198 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device including forming a thin film containing silicon, oxygen and carbon on a substrate by performing a cycle a...
US-9,548,197 Substrate treatment method and substrate treatment apparatus
A substrate treatment method is provided, which includes a rinsing step of supplying a rinse liquid to a front surface of a rotating substrate after a chemical...
US-9,548,196 Discharge lamp
A discharge lamp includes a cathode in a luminous tube, and an emitter, other than thorium, is added to the cathode. The emitter is prevented from being...
US-9,548,195 Ion ejection from a quadrupole ion trap
A method of ejecting ions to be analyzed from a quadrupole ion trap in which a trapping field is created by one or more RF voltages applied to one or more...
US-9,548,194 Toroidal trapping geometry pulsed ion source
An ion trap is disclosed comprising: a plurality of electrodes which define a toroidal or annular ion confining volume that extends around a central axis; a...
US-9,548,193 Quadrupole mass spectrometer with quadrupole mass filter as a mass separator
In a scan measurement in which a mass scan is repeated across a predetermined mass range, when a voltage is returned from a termination voltage of one scan to...
US-9,548,192 Ion focusing
The invention generally relates to apparatuses for focusing ions at or above ambient pressure and methods of use thereof. In certain embodiments, the invention...
US-9,548,191 Ion trapping with integrated electromagnets
Devices, systems, and methods for ion trapping with integrated electromagnets are described herein. One device includes a plurality of electrodes configured to...
US-9,548,190 Scheduled MS.sup.3 for quantitation
Systems and methods are provided for scheduled MS.sup.3. A compound of interest is separated from a sample over a known time period using a separation device. A...
US-9,548,189 Plasma etching systems and methods using empirical mode decomposition
A substrate etching system includes an etching control module, a filtering module, and an endpoint module. The etching control module selectively begins plasma...
US-9,548,188 Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
A method of conditioning a vacuum chamber of a semiconductor substrate processing apparatus includes forming a layer of an organic polymeric film on plasma or...
US-9,548,187 Microwave radiation antenna, microwave plasma source and plasma processing apparatus
A microwave radiation antenna includes an antenna body having a microwave radiation surface; a processing gas inlet configured to introduce a processing gas...
US-9,548,186 Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
A plasma processing system having a plasma processing chamber configured for processing a substrate is provided. The plasma processing system includes at least...
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