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Patent # Description
US-9,553,233 Light emitting diode
A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode, and a second...
US-9,553,232 Light emitter with a conductive transparent p-type layer structure
A light emitting device includes an n-type layer, a p-type layer structure, a layer of p-type nano-dots imbedded in the p-type layer structure, and an active...
US-9,553,231 Semiconductor layer sequence and method of operating an optoelectronic semiconductor chip
The semiconductor layer sequence includes an n-conductive layer, a p-conductive layer and an active zone located therebetween. The active zone comprises N...
US-9,553,230 Method and apparatus for fabricating light emitting apparatus
A method for fabricating a light emitting apparatus in which at least a portion of a light emitting element is covered with a light transmissive resin...
US-9,553,229 Etching of solar cell materials
A solar cell is fabricated by etching one or more of its layers without substantially etching another layer of the solar cell. In one embodiment, a copper layer...
US-9,553,228 Solar cell, production method therefor, and solar cell module
A solar cell of the invention includes a collecting electrode on a first principal surface of a photoelectric conversion section. The collecting electrode...
US-9,553,227 Optical element and concentrating photovoltaic device
Provided are an optical element and a concentrating photovoltaic device which are each capable of preventing warpage and deformation of an optical functional...
US-9,553,226 Solar cell module and method for manufacturing the same
A method for manufacturing a solar cell module includes a cell forming operation of forming a plurality of first and second electrodes on a back surface of a...
US-9,553,225 Tapered trunking system with distributed combiner
A tapered trunking bus for carrying electricity from a row of solar panel arrays to a safety switch. The trunking bus includes a number of combiner and junction...
US-9,553,224 Semiconductor photodetector element and method
A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the...
US-9,553,223 Method for alignment of microwires
A method of aligning microwires includes modifying the microwires so they are more responsive to a magnetic field. The method also includes using a magnetic...
US-9,553,222 Germanium metal-contact-free near-IR photodetector
A Ge-on-Si photodetector constructed without doping or contacting Germanium by metal is described. Despite the simplified fabrication process, the device has...
US-9,553,221 Electromagnetic casting method and apparatus for polycrystalline silicon
Disclosed is an electromagnetic casting method of polycrystalline silicon which is characterized in that polycrystalline silicon is continuously cast by...
US-9,553,220 Field-shaping multi-well avalanche detector for direct conversion amorphous selenium
A field shaping multi-well avalanche detector and method for fabrication thereof are disclosed. The field shaping multi-well avalanche detector provides stable...
US-9,553,219 Glass unit
A glass unit includes an energy collecting layer attached to a light directing device for collecting a light energy from the light directing device, and an...
US-9,553,218 High transmittance thin film solar panel
A high transmittance thin film solar panel includes a transparent substrate, a front electrode layer, a light absorption layer and a rear electrode layer. The...
US-9,553,217 Method of manufacturing semiconductor device and structure with trenches in passivation film
A method of manufacturing a semiconductor device is provided. The method includes forming a passivation film on a substrate including a first element region, a...
US-9,553,216 Avalanche photodiode receiver
A method of operating an avalanche photodiode includes providing an avalanche photodiode having a multiplication region capable of amplifying an electric...
US-9,553,215 Method and device for recognizing faults in a photovoltaic system
The invention relates to a method and a device for recognizing faults in a photovoltaic system (1). A first output voltage (U0, UMPP) of the system (1) and/or a...
US-9,553,214 Positioning method of photoelectric conversion device, and liquid ejecting apparatus
A positioning method of a photoelectric conversion device (an imaging device) includes irradiating an optical member with light and receiving light which passes...
US-9,553,213 Solar cell apparatus and method of fabricating the same
Disclosed are a solar cell apparatus, and a method of fabricating the same. The solar cell apparatus includes: dummy parts disposed on a support substrate; a...
US-9,553,212 Optical coupler
An optical coupler includes an optical transmitting unit and an optical receiving unit in a facing arrangement. The optical transmitting unit includes a power...
US-9,553,211 Schottky barrier diode and apparatus using the same
A Schottky barrier diode includes a first semiconductor layer, a LOCOS layer arranged in contact with the first semiconductor layer, a Schottky junction region...
US-9,553,210 High frequency power diode and method for manufacturing the same
High frequency power diode including a semiconductor wafer having first and second main sides, a first layer of a first conductivity type formed on the first...
US-9,553,209 Process for manufacturing a semiconductor device comprising an empty trench structure and semiconductor device...
The process is based upon the steps of: forming a trench in a body including a substrate and at least one insulating layer; and depositing a metal layer above...
US-9,553,208 Current sensor device
A current sensor device for sensing a measuring current includes a semiconductor chip having a magnetic field sensitive element. The current sensor device...
US-9,553,207 NVM device using FN tunneling with parallel powered source and drain
A nonvolatile memory ("NVM") bitcell includes a capacitor, a transistor, and a tunneling device. The capacitor, transistor, and tunneling device are each...
US-9,553,206 EEPROM core structure embedded into BCD process and forming method thereof
The present invention provides an EEPROM core structure embedded into BCD process and forming method thereof. The EEPROM core structure embedded into BCD...
US-9,553,205 Semiconductor device, driver circuit, and display device
To provide a semiconductor device having a high aperture ratio and including a capacitor with a high charge capacitance. To provide a semiconductor device with...
US-9,553,204 Semiconductor device, electronic component, and electronic device
A semiconductor device excellent in writing operation is provided. In a structure where a data voltage supplied to a source line is supplied to a node of a...
US-9,553,203 Display panel
A display panel includes a base substrate including a pixel area and a peripheral area, a semiconductor layer disposed on a portion of the base substrate, a...
US-9,553,202 Semiconductor device, manufacturing method thereof, and electronic device
The semiconductor device includes a first layer including a first transistor, a second layer including a first insulating film over the first layer, a third...
US-9,553,201 Thin film transistor, thin film transistor array panel, and manufacturing method of thin film transistor
The inventive concept relates to a thin film transistor and a thin film transistor array panel and, in detail, relates to a thin film transistor including an...
US-9,553,200 Semiconductor device and method for manufacturing the same
An oxide semiconductor layer is formed, a gate insulating layer is formed over the oxide semiconductor layer, a gate electrode layer is formed to overlap with...
US-9,553,199 FET device having a vertical channel in a 2D material layer
Semiconductor devices and methods of forming the same are provided. A source/drain electrode stack is formed over a substrate, wherein the source/drain...
US-9,553,198 TFT substrate structure and manufacturing method thereof
The present invention provides a TFT substrate structure and a manufacturing method thereof. The TFT substrate structure of the present invention includes an...
US-9,553,197 Thin film transistor and display device including the same
A thin film transistor includes: a lower gate electrode on a substrate; a gate insulating layer on the lower gate electrode; a first semiconductor layer on the...
US-9,553,196 Multi-gate thin film transistor, array substrate and display device
The present invention discloses a multi-gate thin film transistor for realizing a multi-gate occupying a small area, pixels provided with the multi-gate TFTs...
US-9,553,195 Method of IGZO and ZNO TFT fabrication with PECVD SiO.sub.2 passivation
The present invention generally relates to a method of manufacturing a TFT. The TFT has an active channel that comprises IGZO or zinc oxide. After the source...
US-9,553,194 Method for improved fin profile
A method can include performing an etching process to define a fin trench having a first depth, the first depth being less that a target height of fin. A method...
US-9,553,193 Double gated fin transistors and methods of fabricating and operating the same
A semiconductor device is provided that includes a fin having a first upper gate on a sidewall of the fin in a first trench and a second upper gate formed on...
US-9,553,192 Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such...
Semiconductor devices include a strain-inducing layer capable of applying a strain to a channel region of a transistor included in a miniaturized electronic...
US-9,553,191 Fin field effect transistor and method for fabricating the same
A method of fabricating a FinFET includes at last the following steps. A semiconductor substrate is patterned to form a plurality of trenches in the...
US-9,553,190 Semiconductor devices including source/drain regions having multiple epitaxial patterns
A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions...
US-9,553,189 Self-aligned silicide formation on source/drain through contact via
According to certain embodiments, a silicide layer is formed after the fabrication of a functional gate electrode using a gate-last scheme. An initial...
US-9,553,188 High-voltage semiconductor device with finger-shaped insulation structure
A high-voltage semiconductor device includes a semiconductor substrate, a gate structure, a drain, an insulation structure, and a plurality of conductive...
US-9,553,187 Semiconductor device and related fabrication methods
Semiconductor device structures and related fabrication methods are provided. An exemplary semiconductor device structure includes a body well region having a...
US-9,553,186 Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
Embodiments of a manufacturing process for recessed gate devices on silicon-on-insulator (SOI) substrate with self-aligned lateral isolation are described. This...
US-9,553,185 MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor device
A mask used to form an n.sup.+ source layer (11) is formed by a nitride film on the surface of a substrate before a trench (7) is formed. At this time, a...
US-9,553,184 Edge termination for trench gate FET
A semiconductor device includes a semiconductor layer disposed at a substrate and a plurality of active cells disposed at the semiconductor layer. Each active...
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