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Patent # Description
US-9,553,183 Gate stack for normally-off compound semiconductor transistor
A normally-off compound semiconductor transistor includes a heterostructure body and a gate stack on the heterostructure body. The heterostructure body includes...
US-9,553,182 Circuit structure, transistor and semiconductor device
A circuit structure includes a substrate, a III-V semiconductor compound over the substrate, a Al.sub.xGa.sub.(1-X)N (AlGaN) layer over the III-V semiconductor...
US-9,553,181 Crystalline-amorphous transition material for semiconductor devices and method for formation
The present disclosure presents a novel structure for a dielectric material for use with Group III-V material systems and a method of fabricating such a...
US-9,553,179 Semiconductor device and insulated gate bipolar transistor with barrier structure
A semiconductor device includes a semiconductor mesa which is formed between cell trench structures extending from a first surface into a semiconductor body....
US-9,553,178 Semiconductor component with an emitter control electrode
A semiconductor component includes a first emitter zone of a first conductivity type, a second emitter zone of a second conductivity type, a first base zone...
US-9,553,177 Vertically base-connected bipolar transistor
Methods, devices, and systems for using and forming vertically base-connected bipolar transistors have been shown. The vertically base-connected bipolar...
US-9,553,176 Semiconductor device, capacitor, TFT with improved stability of the active layer and method of manufacturing...
A semiconductor device includes a gate, a first electrode, a first insulating layer, an active layer, an etching stop layer, a second insulating layer, a...
US-9,553,175 SONOS type stacks for nonvolatile charge trap memory devices and methods to form the same
A method includes forming a first oxide layer. The method further includes etching a portion of the first oxide layer using a first decoupled plasma nitridation...
US-9,553,174 Conversion process utilized for manufacturing advanced 3D features for semiconductor device applications
Embodiments of the present invention provide methods for forming fin structure with desired materials using a conversion process for three dimensional (3D)...
US-9,553,173 Asymmetric finFET memory access transistor
A field effect transistor device comprises a semiconductor substrate, a doped source layer arranged on the semiconductor substrate, an insulator layer arranged...
US-9,553,172 Method and structure for FinFET devices
A semiconductor device and a method of forming the same are disclosed. The method includes receiving a substrate having a fin projecting through an isolation...
US-9,553,171 Fin field effect transistor (FinFET) device and method for forming the same
Embodiments for forming a fin field effect transistor (FinFET) device structure are provided. The FinFET device structure includes a substrate and a first fin...
US-9,553,170 Manufacturing method of thin film transistor and thin film transistor
A manufacturing method of a thin film transistor and a thin film transistor are provided. In the manufacturing method, formation of pattern of a source...
US-9,553,169 Method for manufacturing AMOLED backplane
The present invention provides a method for manufacturing an AMOLED backplane, in which after a first metal layer is patternized to form a first gate terminal...
US-9,553,168 Semiconductor memory device and method of manufacturing the same
The present technology includes a semiconductor memory device, including a channel layer and interlayer insulation layers surrounding the channel layer. The...
US-9,553,167 Semiconductor device and method for forming the same
A semiconductor device is disclosed. The semiconductor device comprising: a semiconductor substrate having first type conductivity and including an active...
US-9,553,166 Asymmetric III-V MOSFET on silicon substrate
A semiconductor structure containing a high mobility semiconductor channel material, i.e., a III-V semiconductor material, and asymmetrical source/drain regions...
US-9,553,165 Method of forming a semiconductor device
In one embodiment, an IGBT is formed to include a plurality of termination trenches in a termination region of the IGBT. An embodiment may include that one end...
US-9,553,164 Method for manufacturing IGBT
A method for manufacturing an IGBT, comprising: providing a substrate having a first surface and a second surface and of a first or second type of electrical...
US-9,553,163 Metal-semiconductor-metal (MSM) heterojunction diode
In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a...
US-9,553,162 Semiconductor device and method of forming semiconductor die with active region responsive to external stimulus
A semiconductor device has a semiconductor die and an encapsulant deposited over the semiconductor die. A conductive layer can be formed over the encapsulant...
US-9,553,161 Mechanism for forming metal gate structure
A method for forming a semiconductor device is provided. The method includes providing a semiconductor substrate and forming a metal gate stack including a...
US-9,553,160 Mechanisms for monitoring impurity in high-K dielectric film
Embodiments of mechanisms of monitoring metal impurity in a high-k dielectric film are provided. The method includes forming an interfacial layer over a...
US-9,553,159 Semiconductor devices having polysilicon gate patterns and methods of fabricating the same
A semiconductor device including a gate insulation pattern on a substrate, and a semiconductor gate pattern including an amorphous silicon pattern and a...
US-9,553,158 Thin film transistor array substrate and a thin film transistor which comprise a conductive structure...
Embodiments of the invention provide a conductive structure, a thin film transistor, an array substrate, and a display device. The conductive structure...
US-9,553,157 Diffusion-controlled oxygen depletion of semiconductor contact interface
A device is created by forming a layer of dielectric material on a silicon-containing region of a semiconductor substrate. An opening is created through the...
US-9,553,156 Organic light emitting display device and method of manufacturing the same
Provided are an organic light emitting display device and a method of manufacturing the organic light emitting display device according to an exemplary...
US-9,553,155 Semiconductor device and method
In an embodiment, a semiconductor device includes a High Electron Mobility Transistor (HEMT) including a floating gate. The floating gate includes two or more...
US-9,553,154 Memory devices and method of fabricating same
A device comprises a control gate structure over a substrate, a memory gate structure over the substrate, wherein the memory gate structure comprises a memory...
US-9,553,153 Post growth defect reduction for heteroepitaxial materials
A method of reducing defects in epitaxially grown III-V semiconductor material comprising: epitaxially growing a III-V semiconductor on a substrate; patterning...
US-9,553,152 Semiconductor device
A semiconductor device includes: a first semiconductor layer which is formed over a substrate and is formed from a nitride semiconductor; a second semiconductor...
US-9,553,151 III-nitride device and method having a gate isolating structure
A semiconductor device containing a GaN FET has an isolating gate structure outside the channel area which is operable to block current in the two-dimensional...
US-9,553,150 Transistor design
Some embodiments of the present disclosure relate to a transistor device formed in a semiconductor substrate containing dopant impurities of a first impurity...
US-9,553,149 Semiconductor device with a strained region and method of making
A semiconductor device with a strained region is provided. The semiconductor device includes a first dielectric layer, a second dielectric layer disposed over...
US-9,553,148 Method of making a wire-based semiconductor device
In some embodiments, a method for manufacturing forms a semiconductor device, such as a transistor. A dielectric stack is formed on a semiconductor substrate....
US-9,553,147 Trench formation with CD less than 10nm for replacement fin growth
Embodiments described herein generally relate to methods of forming sub-10 nm node FinFETs. Various processing steps may be performed on a substrate to provide...
US-9,553,146 Three dimensional NAND device having a wavy charge storage layer
A monolithic three dimensional NAND string includes a semiconductor channel, where at least one end portion of the semiconductor channel extending substantially...
US-9,553,145 Lateral bipolar junction transistors on a silicon-on-insulator substrate with a thin device layer thickness
Methods of forming bipolar device structures and bipolar device structures. An opening may be formed in a device layer of a silicon-on-insulator substrate that...
US-9,553,144 Semiconductor device and semiconductor device manufacturing method
A semiconductor device includes a semiconductor substrate; a first semiconductor region that includes an extension portion extending in a specific direction at...
US-9,553,143 Semiconductor device and method for fabricating the same
A semiconductor device includes: a semiconductor substrate; a semiconductor layer disposed over the semiconductor layer; a first well region disposed in the...
US-9,553,142 Semiconductor device having buried layer
A semiconductor device includes a substrate having a first conductivity type, a high-voltage well having a second conductivity type and disposed in the...
US-9,553,141 Semiconductor device having supporter
A semiconductor device includes a plurality of lower electrodes having a vertical length greater than a horizontal width on a substrate, a supporter disposed...
US-9,553,140 Integrated circuit and method of fabricating the same
An integrated circuit and a method of fabricating the integrated circuit are provided. In various embodiments, the integrated circuit includes a substrate and a...
US-9,553,139 Semiconductor component and method of manufacture
In accordance with an embodiment, a semiconductor component and a method for manufacturing a semiconductor component are provided. A first dielectric material...
US-9,553,138 Organic light-emitting diode display having a repair line
An organic light-emitting diode display is disclosed. In one aspect, the OLED display includes a first connection line extending in a first direction and...
US-9,553,137 Display device
A display device includes a substrate, a plurality of first layered link lines spaced apart from each other on the substrate, a first insulating layer on the...
US-9,553,136 Organic light emitting diode display
An organic light emitting diode (OLED) display, including a flexible substrate bent in a first direction, an OLED arranged on the flexible substrate, a first...
US-9,553,135 Flexible display substrate and method for manufacturing the same
Disclosed is a flexible display substrate and a method for manufacturing the same which can avoid break and peeling of film layers disposed on a flexible base...
US-9,553,134 Display device
Provided is a display device, including: a first substrate including a display area and a non-display area adjacent to the display area; a display unit on the...
US-9,553,133 Method for producing an optoelectronic assembly, and optoelectronic assembly
A method for producing an optoelectronic assembly having a first and at least a second optoelectronic components may include forming a first electrically...
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