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Patent # Description
US-9,559,232 Folding deployment system for solar panels
A folding deployment system for solar panels provides a portable solar collecting power station that can be easily packaged and deployed for use in diverse...
US-9,559,231 Photovoltaic nanowire structures and related fabrication methods
Nanowire-based photovoltaic energy conversion devices and related fabrication methods therefor are described. A plurality of photovoltaic (PV) nanowires extend...
US-9,559,230 Solar cell and method for manufacturing same
Disclosed are a solar cell and a method for manufacturing the same. The solar cell comprises asymmetric nanowires each of which has an angled sidewall, and thus...
US-9,559,229 Multi-junction solar cell
The disclosure provides a multi-junction solar cell structure and the manufacturing method thereof, comprising a first photovoltaic structure and a second...
US-9,559,228 Solar cell with doped groove regions separated by ridges
Solar cells with doped groove regions separated by ridges and methods of fabricating solar cells are described. In an example, a solar cell includes a substrate...
US-9,559,227 Nanostructure and optical device including the nanostructure
Provided are a nanostructure and an optical device including the nanostructure. The nanostructure is formed on a two-dimensional material layer such as graphene...
US-9,559,226 Solid-state imaging apparatus and electronic apparatus
A solid-state imaging apparatus includes a phase difference detection pixel including a photoelectric conversion section that is formed on a semiconductor...
US-9,559,225 Solid state detection devices, methods of making and methods of using
The present application is directed to a solid state device for detecting neutrons. The device includes a semiconductor substrate having pores. The device also...
US-9,559,224 Sensor module and method of manufacturing the same
The opto-electronic module (1) comprises --a first substrate member (P); --a third substrate member (B); --a second substrate member (O) arranged between said...
US-9,559,223 Solar cell apparatus and method of fabricating the same
According to the embodiment, there is provided a solar cell apparatus. The solar cell apparatus includes a back electrode layer on a substrate, a light...
US-9,559,222 Method and tool to reverse the charges in anti-reflection films used for solar cell applications
A method is provided for making a solar cell. The method includes providing a stack including a substrate, a barrier layer disposed on the substrate, and an...
US-9,559,221 Solar cell production method, and solar cell produced by same production method
This solar cell production method involves productively forming an antireflection film comprising silicon nitride, said antireflection film having an excellent...
US-9,559,220 Solar cell
A solar cell is discussed. The solar cell includes a substrate of a first conductive type, an emitter region which is positioned at a front surface of the...
US-9,559,219 Fast process flow, on-wafer interconnection and singulation for MEPV
A method including providing a substrate comprising a device layer on which a plurality of device cells are defined; depositing a first dielectric layer on the...
US-9,559,218 Semiconductor device and method of manufacturing the same
A semiconductor device comprises a semiconductor layer including a mesa structure and a peripheral surface extending around the mesa structure, the mesa...
US-9,559,217 Silicon carbide semiconductor device
A silicon carbide semiconductor device includes a silicon carbide layer, an insulating layer, a Schottky electrode, and a reaction region. The silicon carbide...
US-9,559,216 Semiconductor memory device and method for biasing same
Techniques for providing a semiconductor memory device are disclosed. In one particular embodiment, the techniques may be realized as a semiconductor memory...
US-9,559,215 Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displays
Embodiments of the invention include sulfur alloyed InGaZnO (IGZOS) thin film transistors (TFTs) and methods of making such devices. In one embodiment, the...
US-9,559,214 Semiconductor device
A semiconductor device includes a first electrode, a first insulating layer having a first opening reaching the first electrode and having a ring-shaped first...
US-9,559,213 Semiconductor device
Provided is a transistor which includes an oxide semiconductor film and has stable electrical characteristics. In the transistor, over an oxide film which can...
US-9,559,212 Semiconductor device and method for manufacturing the same
An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical...
US-9,559,211 Semiconductor device and manufacturing method thereof
A method for manufacturing a semiconductor device, which enables miniaturization and reduction of defect, is provided. It includes forming an oxide...
US-9,559,210 Thin film transistor and method of manufacturing the same
A thin film transistor is provided as follows. A first gate electrode and a second gate electrode are stacked on each other. A semiconductor layer is interposed...
US-9,559,209 Field effect transistors and methods of forming same
Semiconductor devices and methods of forming the same are provided. A first source/drain layer is formed over a substrate. A channel layer is formed over the...
US-9,559,208 Liquid crystal display device and electronic device including the same
A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide...
US-9,559,207 Semiconductor device having epitaxy structure
A semiconductor device includes a substrate, a semiconductor fin, a gate stack, and an epitaxy structure. The semiconductor fin is disposed in the substrate. A...
US-9,559,206 FinFETs with necking in the fins
A method includes forming isolation regions in a semiconductor substrate, forming a first semiconductor strip between opposite portions of isolation regions,...
US-9,559,205 Structure and formation method of semiconductor device structure
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a...
US-9,559,204 Strained semiconductor device and method of making the same
In a method for forming a semiconductor device, a gate electrode is formed over a semiconductor body (e.g., bulk silicon substrate or SOI layer). The gate...
US-9,559,203 Modular approach for reducing flicker noise of MOSFETs
In one example implementation, the present disclosure provides a modular approach to reducing flicker noise in metal-oxide semiconductor field-effect...
US-9,559,202 Method for forming metal semiconductor alloys in contact holes and trenches
A semiconductor device is provided that includes a gate structure on a channel region of a substrate. A source region and a drain region are present on opposing...
US-9,559,201 Vertical memory devices, memory arrays, and memory devices
Vertical memory devices comprise vertical transistors in an array region and digit lines extending in a first direction and comprising a source region or a...
US-9,559,200 Method and apparatus for power device with multiple doped regions
A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source...
US-9,559,199 LDMOS with adaptively biased gate-shield
An LDFET is disclosed. A source region is electrically coupled to a source contact. A lightly doped drain (LDD) region has a lower dopant concentration than the...
US-9,559,198 Semiconductor device and method of manufacture therefor
A semiconductor device comprises a first contact layer, a first drift layer adjacent the first contact layer, a buried body layer adjacent the first drift layer...
US-9,559,197 Hetero-junction semiconductor device and method of manufacturing a hetero-junction semiconductor device
A hetero-junction semiconductor device includes: a channel layer that includes a first semiconductor; a barrier layer that is provided on the channel layer and...
US-9,559,196 Semiconductor wafer, method of producing semiconductor wafer, electronic device, and method of producing...
A semiconductor wafer includes a base wafer, a first semiconductor portion that is formed on the base wafer and includes a first channel layer containing a...
US-9,559,195 Semiconductor device
A semiconductor device of the present invention includes a semiconductor layer, a plurality of gate trenches formed in the semiconductor layer, a gate electrode...
US-9,559,194 Transistors and methods of forming transistors
Some embodiments include a transistor having a drain region and a source region. A conductive gate is between the source and drain regions. First channel...
US-9,559,193 Semiconductor device and method for manufacturing semiconductor device
A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is...
US-9,559,192 Method of fabricating semiconductor device
A method of fabricating a semiconductor device includes forming a first fin-shaped pattern having a first fin mask pattern disposed thereon on a substrate,...
US-9,559,191 Punch through stopper in bulk finFET device
A method of forming a semiconductor device that includes forming a fin structure from a bulk semiconductor substrate and forming an isolation region contacting...
US-9,559,190 Semiconductor structure and manufacturing method thereof
A semiconductor structure includes a substrate and a metal gate. The metal gate includes a metallic filling layer and disposed over the substrate. The...
US-9,559,189 Non-planar FET
The present invention provides a non-planar FET which includes a substrate, a fin structure, a gate and a gate dielectric layer. The fin structure is disposed...
US-9,559,188 Trench gate type semiconductor device and method of producing the same
A method of producing a trench gate type MOSFET is provided in which each intersection trench is formed as a two-stage trench structure. A gate trench is...
US-9,559,187 Semiconductor device
A semiconductor device includes a plurality of epitaxial layers stacked over a supportive substrate, a first buried impurity region formed to share the...
US-9,559,186 Epitaxially grown stacked contact structure of semiconductor device
The embodiments described above provide mechanisms of forming contact structures with low resistance. A strained material stack with multiple sub-layers is used...
US-9,559,185 Semiconductor devices and methods of manufacturing the same
A semiconductor device includes a substrate including an active fin structure, a plurality of gate structures, a first spacer on sidewalls of each of the gate...
US-9,559,184 Devices including gate spacer with gap or void and methods of forming the same
Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance...
US-9,559,183 Semiconductor device with varying thickness of insulating film between electrode and gate electrode and method...
To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a...
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