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Patent # Description
US-9,559,182 Self-aligned dual-metal silicide and germanide formation
A device having an epitaxial region and dual metal-semiconductor alloy surfaces is provided. The epitaxial region includes an upward facing facet and a downward...
US-9,559,181 Structure and method for FinFET device with buried sige oxide
The present disclosure provides a semiconductor device that includes a substrate of a first semiconductor material; a fin feature having a first portion, a...
US-9,559,180 Semiconductor device and method of manufacturing the same
A semiconductor device is provided. The semiconductor device includes a semiconductor substrate, a P-well and an N-well disposed in the semiconductor substrate,...
US-9,559,179 Fabrication of shielded gate trench MOSFET with increased source-metal contact
A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising: a gate trench extending from the substrate top surface...
US-9,559,178 Non-volatile memory (NVM) cell and device structure integration
A dielectric layer is formed over the substrate in the capacitor region and the memory region and a select gate layer is formed over the dielectric layer. A...
US-9,559,177 Memory devices and method of fabricating same
A device comprises a control gate structure over a substrate, a memory gate structure over the substrate, wherein a charge storage layer formed between the...
US-9,559,176 FinFET conformal junction and abrupt junction with reduced damage method and device
A method of forming a source/drain region with abrupt vertical and conformal junction and the resulting device are disclosed. Embodiments include forming a...
US-9,559,175 Semiconductor device
The parasitic capacitance formed by a gate electrode, a contact, and a side wall is reduced. The gate electrode and the side wall are covered by an insulating...
US-9,559,174 Semiconductor film, transistor, semiconductor device, display device, and electronic appliance
Favorable electrical characteristics are given to a semiconductor device. Furthermore, a semiconductor device having high reliability is provided. One...
US-9,559,173 Nitride semiconductor device using insulating films having different bandgaps to enhance performance
The semiconductor device includes: a channel layer, a barrier layer, a first insulating film, and a second insulating film, each of which is formed above a...
US-9,559,172 Semiconductor device and method of manufacturing the same
A semiconductor device of an embodiment includes a p-type SiC impurity region containing a p-type impurity and an n-type impurity. Where the p-type impurity is...
US-9,559,171 Semiconductor device
In order to realize an SJ-MOSFET and an IGBT on a single chip and realize a new arrangement configuration for an SJ-MOSFET section and an IGBT section in a...
US-9,559,170 Electrostatic discharge protection devices
A semiconductor device for electrostatic discharge (ESD) protection including a source, a gate, a drain having a drain diffusion, and a diffusion region...
US-9,559,169 Thin film transistor array substrate and organic light-emitting diode display employing the same
A thin film transistor (TFT) array substrate and an organic light-emitting diode display employing the same are disclosed. In one aspect, the substrate includes...
US-9,559,168 Field effect transistors and methods of forming same
Semiconductor devices and methods of forming the same are provided. A first gate stack is formed over a substrate, wherein the first gate stack comprises a...
US-9,559,167 Semiconductor component with dynamic behavior
One embodiment provides a semiconductor component including a semiconductor body having a first side and a second side and a drift zone; a first semiconductor...
US-9,559,166 Fabricating transistors having resurfaced source/drain regions with stressed portions
Methods are providing for fabricating transistors having at least one source region or drain region with a stressed portion. The methods include: forming,...
US-9,559,165 Semiconductor structure with strained source and drain structures and method for forming the same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a first gate structure and a...
US-9,559,164 Nanowire transistor device and method for manufacturing nanowire transistor device
A nanowire transistor device includes a substrate, a plurality of nanowires formed on the substrate, and a gate surrounding at least a portion of each nanowire....
US-9,559,163 Memory arrays
The invention includes semiconductor constructions having trenched isolation regions. The trenches of the trenched isolation regions can include narrow bottom...
US-9,559,162 Thermoresistance sensor structure for integrated circuits and method of making
A first pair of resistors formed in a first layer of material, and a second pair of resistors formed in the first layer or in a second layer can be wired into a...
US-9,559,161 Patterned back-barrier for III-nitride semiconductor devices
A compound semiconductor device includes a III-nitride buffer and a III-nitride barrier on the III-nitride buffer. The III-nitride barrier has a different band...
US-9,559,160 Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material...
Common-substrate semiconductor devices having nanowires or semiconductor bodies with differing material orientation or composition and methods to form such...
US-9,559,159 Low-temperature polysilicon membrane and preparation method thereof, thin-film transistor and display device
A method for preparing an LTPS membrane, including: forming an amorphous silicon (a-Si) layer (S3) on a substrate (S1) by a patterning process, in which the...
US-9,559,158 Method and apparatus for an integrated capacitor
An integrated capacitor can be fabricated with both electrodes formed by trenches for low resistance. According to one embodiment, the capacitor can comprise a...
US-9,559,157 Display device
A display device includes a display panel and a flexible printed circuit (FPC) connected to the display panel. The FPC includes a first region and a second...
US-9,559,156 Organic light emitting diode display
An organic light emitting diode display includes a substrate including a display area and a non-display area, a display unit that is formed in the display area...
US-9,559,155 Organic light emitting display device with short-circuit prevention
Disclosed is an organic light emitting display device. The organic light emitting display device includes a white organic light emitting diode (OLED) formed in...
US-9,559,154 Display device keeping a distance between a light emitting layer and a counter substrate uniformly
A display device includes a first substrate, pixel electrodes located in correspondence with pixels above the first substrate, a first partition covering ends...
US-9,559,153 Display device
A display device includes: an organic layer arranged in plural pixels which are arranged in a display area in a matrix; a first electrode that is formed on a...
US-9,559,152 Display device with a touch device
A display device with a touch device comprises a substrate, a first bridge electrode positioned on the substrate, a plurality of insulating layer patterns...
US-9,559,151 OLED display architecture
A device that may be used as a multi-color pixel is provided. The device has a first organic light emitting device, a second organic light emitting device, a...
US-9,559,150 High efficiency LEDs and LED lamps
In various embodiments, lighting systems include an electrically insulating carrier having a plurality of conductive elements disposed thereon and a...
US-9,559,149 Solid-state imaging device and electronic apparatus including a photoelectric conversion unit disposed between...
A solid-state imaging device which includes, a photoelectric conversion film provided on a second surface side which is the opposite side to a first surface on...
US-9,559,148 Solid-state imaging device and imaging apparatus
A solid-state imaging device includes a plurality of pixel electrodes disposed two-dimensionally, an opposite electrode provided opposite to the pixel...
US-9,559,147 Semiconductor devices and methods of manufacturing the same
A semiconductor device includes first conductive lines and first and second insulation patterns on a substrate, first structures spaced apart from each other on...
US-9,559,146 Phase-change memory cell implant for dummy array leakage reduction
Embodiments of the present disclosure describe phase-change memory cell implant for dummy array leakage reduction. In an embodiment, an apparatus includes a...
US-9,559,145 Electronic device and method for fabricating the same
Provided is an electronic device including a semiconductor memory which includes a first region in which a first variable resistance element for storing data is...
US-9,559,144 Magnetic random access memory element having tantalum perpendicular enhancement layer
The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory...
US-9,559,143 Method and system for providing magnetic junctions including free layers that are cobalt-free
A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. The magnetic junction includes a free layer, a...
US-9,559,142 Active matrix display panel with ground tie lines
A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and...
US-9,559,141 Manufacturing method of using hydrogen plasma processing on a semiconductor wafer
Hydrogen plasma processing is performed on a semiconductor wafer having a wiring formed in a region except a photodiode formation region of a pixel part and in...
US-9,559,140 Image sensor and method of fabricating the same
Example embodiments disclose an image sensor and a fabricating method thereof. An image sensor may include a semiconductor layer with a light-receiving region...
US-9,559,139 Integrated scintillator grid with photodiodes
Various embodiments of a structure implemented in an X-ray imaging system are described. In one aspect, a structure implemented in an X-ray imaging system...
US-9,559,138 Image sensor and methods of manufacturing the same
An image sensor includes a first substrate, a photodiode array, a first wiring structure, a second wiring structure, a third wiring structure and a light...
US-9,559,137 Color filter of illumination image sensor and method for fabricating the same
The invention provides a color filter of an illumination image sensor and a method for fabricating the same. A color filter of an illumination image sensor...
US-9,559,136 Semiconductor device manufacturing method, and photoelectric conversion device
A semiconductor device manufacturing method includes a step of forming a hole reaching a first insulating layer over a first conductive member; a step of...
US-9,559,135 Conduction layer for stacked CIS charging prevention
A semiconductor device includes a first semiconductor chip comprising a first metallic structure and a second semiconductor chip comprising a second metallic...
US-9,559,134 Deep trench spacing isolation for complementary metal-oxide-semiconductor (CMOS) image sensors
An image sensor employing deep trench spacing isolation is provided. A plurality of pixel sensors is arranged over or within a semiconductor substrate. A trench...
US-9,559,133 Photodetector and image sensor including the same
A photodetector may have a structure including conductive patterns and an intermediate layer interposed between the conductive patterns. A length L of at least...
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