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Patent # Description
US-9,570,688 Semiconductor materials prepared from bridged bithiazole copolymers
The present invention provides semiconducting compounds, oligomers and polymers of formula ##STR00001## wherein A.sup.1 and A.sup.2 can be the same or...
US-9,570,687 Organic light-emitting diode
An organic light-emitting diode including a substrate; a first electrode on the substrate; a second electrode disposed opposite to the first electrode; and an...
US-9,570,686 Organic light emitting diode with increased radical anion stability and applications thereof
An organic light emitting diode (OLED) having an improved service life and improved transport of negative charge carriers. The organic light emitting diode...
US-9,570,685 Method for forming pattern of organic electroluminescent element
A method includes forming an emission pattern on an organic electroluminescent element including an organic functional layer between two electrodes by light...
US-9,570,684 Method of doping 2-dimensional semiconductor and switching device
Example embodiments relate to methods of doping a 2-dimensional semiconductor. The method includes forming a semiconductor layer on a substrate, implanting ions...
US-9,570,683 Three-dimensional two-terminal memory with enhanced electric field and segmented interconnects
Providing for three-dimensional memory cells having enhanced electric field characteristics and/or memory cells located at broken interconnects is described...
US-9,570,682 Semiconductor memory device and method of manufacturing the same
Provided are a variable resistance semiconductor memory device which changes its resistance without being affected by an underlying layer and is suitable as a...
US-9,570,681 Resistive random access memory
A resistive random access memory may include a memory array and a periphery around the memory array. Decoders in the periphery may be coupled to address lines...
US-9,570,680 Method for fabricating electronic devices having semiconductor memory unit
Devices and method based on disclosed technology include, among others, a method for capable of providing asymmetrical arrangement of hole patterns while...
US-9,570,679 Nanodevice assemblies
A semiconductor structure is described containing a deflector between a first nanoscale device and a second nanoscale device. The deflector is designed to...
US-9,570,678 Resistive RAM with preferental filament formation region and methods
A non-volatile memory device includes a first dielectric on a substrate, a first electrode disposed on the first dielectric, a second dielectric material...
US-9,570,677 Memory cells, integrated devices, and methods of forming memory cells
Some embodiments include integrated devices, such as memory cells. The devices may include chalcogenide material, an electrically conductive material over the...
US-9,570,676 Method for manufacturing the magnetic field sensor module
In the method of manufacturing a magnetoresistive sensor module, at first a composite arrangement out of a semiconductor substrate and a metal-insulator...
US-9,570,675 Magnetoresistive structures, magnetic random-access memory devices including the same and methods of...
Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a...
US-9,570,674 Magnetic device
A magnetic device includes a free layer including a first magnetization layer; a pinned layer including a second magnetization layer; and a tunnel barrier layer...
US-9,570,673 Method and processing apparatus for fabricating a magnetic resistive random access memory device
Methods of fabricating MRAM devices are provided along with a processing apparatus for fabricating the MRAM devices. The methods may include forming a...
US-9,570,672 Method of making current sensors
The invention relates to a method for the production of current sensors which comprise a plastic housing made in an IC technology. The key steps are to mount on...
US-9,570,671 Magnetic memory device
According to one embodiment, a magnetic memory device includes a stacked structure including a magnetic element, a protective insulating film covering the...
US-9,570,670 Magnetic device and method of fabricating the same
Provided are a magnetic memory device and a method of fabricating the same. The device may include a magnetic tunnel junction including a lower magnetic...
US-9,570,669 Piezoelectric component and method for producing a piezoelectric component
A piezoelectric component has at least one piezoelectric ceramic layer and at least one electrode adjacent the piezoelectric ceramic layer. The piezoelectric...
US-9,570,668 Piezoelectric device and method for manufacturing piezoelectric device
In a method for manufacturing a piezoelectric device while stably achieving strong bonding, a moisture-absorbing layer is formed on a bonding surface side of a...
US-9,570,667 Thermoelectric conversion material, thermoelectric conversion module using the same, and manufacturing method...
According to an embodiment, a thermoelectric conversion material is made of a polycrystalline material which is represented by a composition formula (1) shown...
US-9,570,666 Silicon-based cooling package for light-emitting devices
Various embodiments of a thermal energy transfer apparatus that removes thermal energy from a light-emitting device are described. In one aspect, an apparatus...
US-9,570,665 Polyamide composition having high thermal conductivity
The present invention relates to a composition based on a polyamide matrix having a high thermal conductivity and comprising specific proportions of alumina and...
US-9,570,664 Light emitting device package, backlight unit, lighting device and its manufacturing method
Provided are a light emitting device package, a backlight unit, a lighting device and its manufacturing method. The light emitting device package may include a...
US-9,570,663 Pixel circuit, electro-optical device, and electronic apparatus
An electro-optical device formed on a semiconductor substrate, includes: a first transistor controlling a current level according to a voltage between a gate...
US-9,570,662 Method of encapsulating an optoelectronic device and light-emitting diode chip
A method of encapsulating an optoelectronic device includes providing a surface intended to be encapsulated, the surface containing platinum, generating...
US-9,570,661 Protective coating for LED lamp
The present disclosure discloses a method for providing protective coatings onto one or more surfaces of a frangible enclosure of an LED lamp and a lamp...
US-9,570,660 Semiconductor light emitting device and semiconductor light emitting apparatus having the same
Provided is a semiconductor light emitting device. The semiconductor light emitting device may include: a light emitting structure comprising a first...
US-9,570,659 Semiconductor device for emitting frequency-adjusted infrared light
A semiconductor device for emitting frequency-adjusted infrared light includes a lateral emitter structure and a lateral filter structure. The lateral emitter...
US-9,570,658 Light emitting element
To provide a semiconductor light emitting element with high luminous efficiency, the light emitting element includes: a substrate; a semiconductor laminate...
US-9,570,657 LED that has bounding silicon-doped regions on either side of a strain release layer
A strain release layer adjoining the active layer in a blue LED is bounded on the bottom by a first relatively-highly silicon-doped region and is also bounded...
US-9,570,656 Group III nitride semiconductor light-emitting device
The present invention provides a Group III nitride semiconductor light-emitting device having a flat semiconductor layer, in which the stress applied to the...
US-9,570,655 Semiconductor light-emitting device
Provided is a light-emitting device that has a high emission efficiency, excellent stability and temperature properties, and that generates light having a high...
US-9,570,654 Nitride light emitting diode and fabrication method thereof
A nitride light-emitting diode including: a substrate with sub-micro patterns over the surface, which is divided into a growth region and a non-growth region; a...
US-9,570,653 Light-emitting semiconductor structure and method for fabricating light-emitting diode device
A method for fabricating a light-emitting device is provided. The method includes: providing a substrate; forming a sacrificial dielectric layer on the...
US-9,570,652 Light emitting diodes
An LED is provided. The LED includes at least two light emitting units located on a same plane. Each light emitting unit includes a first semiconductor layer,...
US-9,570,651 Coalesced nanowire structures with interstitial voids and method for manufacturing the same
A semiconductor device, such as an LED, includes a plurality of first conductivity type semiconductor nanowire cores located over a support, a continuous second...
US-9,570,650 Collapsible photovoltaic module for a large-scale solar power plant
An elongate photovoltaic (PV) module for use in a solar energy conversion plant for the production of electricity from incident light, the PV-module comprising...
US-9,570,649 Methods for fabricating a plurality of optoelectronic devices from a wafer that includes a plurality of light...
Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are...
US-9,570,648 Wafer level optical proximity sensors and systems including wafer level optical proximity sensors
Optoelectronic devices (e.g., optical proximity sensors), methods for fabricating optoelectronic devices, and systems including optoelectronic devices, are...
US-9,570,647 Avalanche photodiode detector
An avalanche photodiode detector is provided. The avalanche photodiode detector comprises an absorber region having an absorption layer for receiving incident...
US-9,570,646 Nano avalanche photodiode architecture for photon detection
An integrated circuit includes a substrate material that includes an epitaxial layer, wherein the substrate material and the epitaxial layer form a first...
US-9,570,645 Photodiode and method of manufacturing the same, and X-ray detector and method of manufacturing the same
A photodiode and a method of manufacturing the same, and an X-ray detector and a method of manufacturing the same are provided. The PIN photodiode includes a...
US-9,570,644 Conversion of high-energy photons into electricity
Systems and methods for the conversion of energy of high-energy photons into electricity which utilize a series of materials with differing atomic charges to...
US-9,570,643 System and method for enhanced convection cooling of temperature-dependent power producing and power consuming...
A cooling system for cooling a temperature-dependent power device includes an active cooling device and a controller to generate and transmit a drive signal...
US-9,570,642 Sealing material sheet for solar cell modules
Provided is a sealing material sheet for solar cell modules, which is obtained by irradiating a polyethylene resin with ionizing radiation and has high...
US-9,570,641 Polymer and solar cell encapsulant using the polymer
Provided is a polymer from which an encapsulant excellent in weather resistance and processability can be obtained when being used for an encapsulant for a...
US-9,570,640 Method of manufacturing solar cell module, and solar cell module
A method of manufacturing a solar cell module includes preparing a solar cell substrate including a support substrate, an electric power generating layer that...
US-9,570,639 System with gradual change of light distribution or shadow distribution on a surface comprising light elements...
The present invention refers to a system including light processing elements, arranged in a respective installation area and combined with a respective...
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