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Patent # Description
US-9,570,638 Laser-transferred IBC solar cells
A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized...
US-9,570,637 Solar cell and manufacturing method of the same
A solar cell includes: a semiconductor substrate having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type...
US-9,570,636 Solar cell and method of fabricating the same
Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a molybdenum layer on a support substrate; an ohmic layer on the...
US-9,570,635 Semiconductor device and patterning method for plated electrode thereof
The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method...
US-9,570,634 Sensor package with exposed sensor array and method of making same
A packaged sensor assembly and method of forming that includes a first substrate having opposing first and second surfaces and a plurality of conductive...
US-9,570,633 Semiconductor package and manufacturing method thereof
A semiconductor package includes a substrate, at least one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first...
US-9,570,632 Method of manufacturing the optical apparatus
A method of manufacturing an optical apparatus is provided. The method includes arranging a photo device above a substrate with an adhesive located between the...
US-9,570,631 Oxide semiconductor substrate and schottky barrier diode
A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide...
US-9,570,630 Schottky diode structure
The invention provides a Schottky diode structure. An exemplary embodiment of a Schottky diode structure includes a semiconductor substrate having an active...
US-9,570,629 Thin film transistor, array substrate and method of fabricating the same, and display device
The embodiments of the present invention provide a thin film transistor including a gate, an upper active layer, a lower active layer, an upper source, a lower...
US-9,570,628 Semiconductor device
An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that...
US-9,570,627 Thim film transistor and method for making the same, thim film transistor panel and display device
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is...
US-9,570,626 Insulating film, method for manufacturing semiconductor device, and semiconductor device
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film...
US-9,570,625 Semiconductor device
To provide a semiconductor device which can be miniaturized or highly integrated. To obtain a semiconductor device including an oxide semiconductor, which has...
US-9,570,624 Thin film transistor and method for fabricating the same
A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source...
US-9,570,623 Semiconductor device and manufacturing method thereof
A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short...
US-9,570,622 Semiconductor device and method for manufacturing the same
To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode...
US-9,570,621 Display substrate, method of manufacturing the same
The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent...
US-9,570,620 Manufacture method of dual gate oxide semiconductor TFT substrate and structure thereof
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate...
US-9,570,619 Semiconductor device and manufacturing method thereof
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number...
US-9,570,618 TFT substrate manufacturing method and TFT substrate
The present invention provides a TFT substrate manufacturing method and a TFT substrate. The TFT substrate manufacturing method of the present invention applies...
US-9,570,617 TFT substrate structure and manufacturing method thereof
The present invention provides a TFT substrate structure and a manufacturing method thereof. A metal oxide semiconductor layer is formed on an amorphous silicon...
US-9,570,616 Display device and manufacturing method thereof
A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on...
US-9,570,615 Gate stack and contact structure
A process for fabrication of semiconductor devices, particularly FinFETs, having a low contact horizontal resistance and a resulting device are provided....
US-9,570,614 Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation and methods of fabricating such Ge and III-V channel...
US-9,570,613 Structure and formation method of FinFET device
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a...
US-9,570,612 Method and structure for straining carrier channel in vertical gate all-around device
Method and structure for enhancing channel performance in a vertical gate all-around device, which provides a device comprising: a source region (140); a drain...
US-9,570,611 Method and device for high k metal gate transistors
A method of manufacturing a semiconductor device includes providing a semiconductor substrate. The semiconductor substrate includes a dummy gate structure...
US-9,570,610 Method of manufacturing semiconductor device
To improve a semiconductor device having a nonvolatile memory. A first MISFET, a second MISFET, and a memory cell are formed, and a stopper film made of a...
US-9,570,609 Crystalline multiple-nanosheet strained channel FETs and methods of fabricating the same
A field effect transistor includes a body layer having a strained crystalline semiconductor channel region, and a gate stack on the channel region. The gate...
US-9,570,608 Transistor, method for fabricating the same, and electronic device including the same
A semiconductor device includes a stressed substrate stressed by a first stress, a first stressed channel formed in the substrate and having the first stress,...
US-9,570,607 Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active area
In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are...
US-9,570,606 FinFET LDMOS device and manufacturing methods
An LDMOS (Laterally-Diffused Metal Oxide Semiconductor) device has a substrate, which includes a first doped region, a second doped region, and a shallow trench...
US-9,570,605 Semiconductor device having a plurality of source lines being laid in both X and Y directions
A device is disclosed. The device includes a semiconductor substrate, a plurality of source lines formed on a surface of the semiconductor substrate. The...
US-9,570,604 Semiconductor device
A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked...
US-9,570,603 Semiconductor device having trench gate structure and method for manufacturing the semiconductor device
A semiconductor device of the present invention includes a semiconductor layer in which a gate trench is formed, a gate insulating film formed along an inner...
US-9,570,602 Manufacturing method of semiconductor device and semiconductor device
The present invention makes it possible to improve the accuracy of wet etching and miniaturize a semiconductor device in the case of specifying an active region...
US-9,570,601 Semiconductor device and method of manufacturing the same
Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor...
US-9,570,600 Semiconductor structure and recess formation etch technique
A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The...
US-9,570,599 Transistor having nitride semiconductor used therein and method for manufacturing transistor having nitride...
A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMI) having a nitride semiconductor used therein is removed only in a region...
US-9,570,598 Method of forming a semiconductor structure
A semiconductor structure comprises a first layer. The first layer comprises a first III-V semiconductor material. The semiconductor structure also comprises a...
US-9,570,597 High electron mobility transistor
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG)...
US-9,570,596 Super junction semiconductor device having a compensation structure
A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a...
US-9,570,595 Transistor and method of making
A SiGe HBT has an inverted heterojunction structure, where the emitter layer is formed prior to the base layer and the collector layer. The frequency...
US-9,570,594 Method for manufacturing semiconductor device
A semiconductor device which is miniaturized while favorable characteristics thereof are maintained is provided. In addition, the miniaturized semiconductor...
US-9,570,593 Semiconductor device and method for manufacturing the same
A variation in electrical characteristics, such as a negative shift of the threshold voltage or an increase in S value, of a fin-type transistor including an...
US-9,570,592 Method of forming split gate memory cells with 5 volt logic devices
A method of forming a memory device on a semiconductor substrate having a memory region (with floating and control gates), a first logic region (with first...
US-9,570,591 Forming semiconductor device with close ground rules
A method for fabricating a semiconductor device comprises forming active regions on a semiconductor substrate, forming a gate stack over the active regions and...
US-9,570,590 Selective oxidation of buried silicon-germanium to form tensile strained silicon FinFETs
A method is provided for forming an integrated circuit with an n-region including n-type FinFETs and a p-region including p-type FinFETs. Initially, a...
US-9,570,589 FINFET semiconductor device and fabrication method
FinFET semiconductor devices and fabrication methods are provided. Discrete fins are formed on a substrate. An insulation layer is formed on the substrate...
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