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Laser-transferred IBC solar cells
A laser processing system can be utilized to produce high-performance interdigitated back contact (IBC) solar cells. The laser processing system can be utilized...
Solar cell and manufacturing method of the same
A solar cell includes: a semiconductor substrate having a light receiving surface and a back surface; a first semiconductor layer of the first conductivity type...
Solar cell and method of fabricating the same
Disclosed are a solar cell and a method of fabricating the same. The solar cell includes a molybdenum layer on a support substrate; an ohmic layer on the...
Semiconductor device and patterning method for plated electrode thereof
The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method...
Sensor package with exposed sensor array and method of making same
A packaged sensor assembly and method of forming that includes a first substrate having opposing first and second surfaces and a plurality of conductive...
Semiconductor package and manufacturing method thereof
A semiconductor package includes a substrate, at least one support, a cover, and a plate. The substrate has at least one light sensor or thermal sensor, a first...
Method of manufacturing the optical apparatus
A method of manufacturing an optical apparatus is provided. The method includes arranging a photo device above a substrate with an adhesive located between the...
Oxide semiconductor substrate and schottky barrier diode
A Schottky barrier diode element includes an n-type or p-type silicon (Si) substrate, an oxide semiconductor layer, and a Schottky electrode layer, the oxide...
Schottky diode structure
The invention provides a Schottky diode structure. An exemplary embodiment of a Schottky diode structure includes a semiconductor substrate having an active...
Thin film transistor, array substrate and method of fabricating the same,
and display device
The embodiments of the present invention provide a thin film transistor including a gate, an upper active layer, a lower active layer, an upper source, a lower...
An intrinsic or substantially intrinsic semiconductor, which has been subjected to a step of dehydration or dehydrogenation and a step of adding oxygen so that...
Thim film transistor and method for making the same, thim film transistor
panel and display device
A thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer, and a gate electrode. The drain electrode is...
Insulating film, method for manufacturing semiconductor device, and
In a semiconductor device including a transistor including an oxide semiconductor film and a protective film over the transistor, an oxide insulating film...
To provide a semiconductor device which can be miniaturized or highly integrated. To obtain a semiconductor device including an oxide semiconductor, which has...
Thin film transistor and method for fabricating the same
A thin film transistor includes a gate electrode, a gate insulating layer, an oxide semiconductor layer, an oxide buffer layer, a protective layer, and source...
Semiconductor device and manufacturing method thereof
A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short...
Semiconductor device and method for manufacturing the same
To provide a highly reliable semiconductor device using an oxide semiconductor. The semiconductor device includes a first electrode layer; a second electrode...
Display substrate, method of manufacturing the same
The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent...
Manufacture method of dual gate oxide semiconductor TFT substrate and
The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate...
Semiconductor device and manufacturing method thereof
As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number...
TFT substrate manufacturing method and TFT substrate
The present invention provides a TFT substrate manufacturing method and a TFT substrate. The TFT substrate manufacturing method of the present invention applies...
TFT substrate structure and manufacturing method thereof
The present invention provides a TFT substrate structure and a manufacturing method thereof. A metal oxide semiconductor layer is formed on an amorphous silicon...
Display device and manufacturing method thereof
A display device includes: a first substrate; a gate electrode on the first substrate; a gate insulating layer on the gate electrode; a semiconductor layer on...
Gate stack and contact structure
A process for fabrication of semiconductor devices, particularly FinFETs, having a low contact horizontal resistance and a resulting device are provided....
Ge and III-V channel semiconductor devices having maximized compliance and
free surface relaxation
Ge and III-V channel semiconductor devices having maximized compliance and free surface relaxation and methods of fabricating such Ge and III-V channel...
Structure and formation method of FinFET device
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a...
Method and structure for straining carrier channel in vertical gate
Method and structure for enhancing channel performance in a vertical gate all-around device, which provides a device comprising: a source region (140); a drain...
Method and device for high k metal gate transistors
A method of manufacturing a semiconductor device includes providing a semiconductor substrate. The semiconductor substrate includes a dummy gate structure...
Method of manufacturing semiconductor device
To improve a semiconductor device having a nonvolatile memory. A first MISFET, a second MISFET, and a memory cell are formed, and a stopper film made of a...
Crystalline multiple-nanosheet strained channel FETs and methods of
fabricating the same
A field effect transistor includes a body layer having a strained crystalline semiconductor channel region, and a gate stack on the channel region. The gate...
Transistor, method for fabricating the same, and electronic device
including the same
A semiconductor device includes a stressed substrate stressed by a first stress, a first stressed channel formed in the substrate and having the first stress,...
Field-effect semiconductor device having alternating n-type and p-type
pillar regions arranged in an active area
In a field-effect semiconductor device, alternating first n-type and p-type pillar regions are arranged in the active area. The first n-type pillar regions are...
FinFET LDMOS device and manufacturing methods
An LDMOS (Laterally-Diffused Metal Oxide Semiconductor) device has a substrate, which includes a first doped region, a second doped region, and a shallow trench...
Semiconductor device having a plurality of source lines being laid in both
X and Y directions
A device is disclosed. The device includes a semiconductor substrate, a plurality of source lines formed on a surface of the semiconductor substrate. The...
A semiconductor device includes an active region, a gate conductor and a source electrode. The active region includes a drain region, a channel region stacked...
Semiconductor device having trench gate structure and method for
manufacturing the semiconductor device
A semiconductor device of the present invention includes a semiconductor layer in which a gate trench is formed, a gate insulating film formed along an inner...
Manufacturing method of semiconductor device and semiconductor device
The present invention makes it possible to improve the accuracy of wet etching and miniaturize a semiconductor device in the case of specifying an active region...
Semiconductor device and method of manufacturing the same
Provided is a technique of securing reliability of a gate insulating film, as much as in a Si power MOSFET, in a semiconductor device in which a semiconductor...
Semiconductor structure and recess formation etch technique
A semiconductor structure has a first layer that includes a first semiconductor material and a second layer that includes a second semiconductor material. The...
Transistor having nitride semiconductor used therein and method for
manufacturing transistor having nitride...
A portion of an AlN spacer layer of a high electron mobility transistor (GaN HEMI) having a nitride semiconductor used therein is removed only in a region...
Method of forming a semiconductor structure
A semiconductor structure comprises a first layer. The first layer comprises a first III-V semiconductor material. The semiconductor structure also comprises a...
High electron mobility transistor
According to example embodiments, a high electron mobility transistor (HEMT) includes a channel supply layer that induces a two-dimensional electron gas (2DEG)...
Super junction semiconductor device having a compensation structure
A super junction semiconductor device includes a semiconductor portion including mesa regions protruding from a base section and spatially separated in a...
Transistor and method of making
A SiGe HBT has an inverted heterojunction structure, where the emitter layer is formed prior to the base layer and the collector layer. The frequency...
Method for manufacturing semiconductor device
A semiconductor device which is miniaturized while favorable characteristics thereof are maintained is provided. In addition, the miniaturized semiconductor...
Semiconductor device and method for manufacturing the same
A variation in electrical characteristics, such as a negative shift of the threshold voltage or an increase in S value, of a fin-type transistor including an...
Method of forming split gate memory cells with 5 volt logic devices
A method of forming a memory device on a semiconductor substrate having a memory region (with floating and control gates), a first logic region (with first...
Forming semiconductor device with close ground rules
A method for fabricating a semiconductor device comprises forming active regions on a semiconductor substrate, forming a gate stack over the active regions and...
Selective oxidation of buried silicon-germanium to form tensile strained
A method is provided for forming an integrated circuit with an n-region including n-type FinFETs and a p-region including p-type FinFETs. Initially, a...
FINFET semiconductor device and fabrication method
FinFET semiconductor devices and fabrication methods are provided. Discrete fins are formed on a substrate. An insulation layer is formed on the substrate...