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Patent # Description
US-9,577,132 Solar cell module
A solar cell module includes a plurality of solar cells each including a substrate, an emitter region positioned at a back surface of the substrate, first...
US-9,577,131 Concentrator photovoltaic module, concentrator photovoltaic panel, and flexible printed circuit for...
A concentrator photovoltaic module including: a flexible printed circuit provided in contact with a bottom surface of a housing; and a primary concentrating...
US-9,577,130 Thin film solar cell backside contact
Embodiments relate to a thin film solar cell backside contact. A planar substrate is provided and an associated backside of the substrate is modified to form...
US-9,577,129 Flexible glass support for a solar cell assembly
A method of bonding solar cell component to a support and the solar cell assembly thus obtained. The method of bonding solar cell component to a support...
US-9,577,128 Cementitious product suitable in particular as substrate for a thin film photovoltaic module, and method of...
The present invention relates to a substrate for a thin film photovoltaic module, characterized in that it is a cementitious product with average surface...
US-9,577,127 Composite material for fluorescent quantum dot micro-nano packaging
A composite material for fluorescent quantum dot micro-nano packaging. The composite material comprises fluorescent quantum dots, a mesoporous particle material...
US-9,577,126 Solar cell emitter region fabrication using ion implantation
Methods of fabricating solar cell emitter regions using ion implantation, and resulting solar cells, are described. In an example, a back contact solar cell...
US-9,577,125 Colloidal semiconducting structure
The present invention is based on a unique design of a novel structure, which incorporates two quantum dots of a different bandgap separated by a tunneling...
US-9,577,124 Infrared sensor and method for manufacturing same, filter member for infrared sensor, and photocoupler
A filter member includes a first lead terminal, an optical filter, and a first mold member, and a light incidence surface and a light emission surface of the...
US-9,577,123 Nanostructure and optical device having nanostructure
Provided are nanostructures and optical devices having the nanostructures. The nanostructure may include a carbon nanomaterial layer, a nanopattern formed on...
US-9,577,122 Conductive paste-forming electrode, solar cell manufacturing method and solar cell
A conductive paste is provided which can form electrodes in crystalline silicon solar cells at low cost while ensuring that the electrodes exhibit low contact...
US-9,577,121 Tetra-lateral position sensing detector
The present invention is directed to a position sensing detector made of a photodiode having a semi insulating substrate layer; a buffered layer that is formed...
US-9,577,120 Anti-reflective coating with high optical absorption layer for backside contact solar cells
A multilayer anti-reflection structure for a backside contact solar cell. The anti-reflection structure may be formed on a front side of the backside contact...
US-9,577,119 Solar module with a plug-in device
A solar module with a front side surface and a rear side surface, has a front side encapsulation element which forms the front side surface of the solar module,...
US-9,577,118 Semiconductor device
The semiconductor device of the present invention includes a first conductivity type semiconductor layer made of a wide bandgap semiconductor and a Schottky...
US-9,577,117 Super-junction schottky oxide pin diode having thin P-type layers under the schottky contact
A semiconductor chip, which includes an n-type substrate, over which an n-type epitaxial layer having trenches introduced into the epitaxial layer and filled...
US-9,577,116 Zener diode having an adjustable low breakdown voltage
The present disclosure relates to a Zener diode including a cathode region having a first conductivity type, formed on a surface of a semiconductor substrate...
US-9,577,115 Semiconductor devices having air gaps
A semiconductor device has an isolation layer pattern, a plurality of gate structures, and a first insulation layer pattern. The isolation layer pattern is...
US-9,577,114 Transistors, methods of forming transistors and display devices having transistors
A transistor, a display device, and associated methods, the transistor including a substrate; an active layer pattern disposed on the substrate, the active...
US-9,577,113 Semiconductor device and method for manufacturing same
A semiconductor device includes a substrate; a gate electrode provided on the substrate; a first insulating layer formed on the gate electrode; an island-shaped...
US-9,577,112 Method for manufacturing semiconductor device
To improve electric characteristics of a semiconductor device including an oxide semiconductor. Alternatively, to improve reliability of a semiconductor device...
US-9,577,111 Method of fabricating thin film transistor
A method of fabricating a thin film transistor including following steps is provided. Sequentially form a semiconductor layer, a metal layer and an auxiliary...
US-9,577,110 Semiconductor device including an oxide semiconductor and the display device including the semiconductor device
A novel semiconductor device including an oxide semiconductor is provided. In particular, a planar semiconductor device including an oxide semiconductor is...
US-9,577,109 Transparent conducting film and preparation method thereof
There are provided a transparent conductive film and a method for preparing the same. The transparent conductive film of the present application comprises a...
US-9,577,108 Semiconductor device
Disclosed is a semiconductor device with a transistor in which an oxide semiconductor is used. An insulating layer on a back channel side of the oxide...
US-9,577,107 Oxide semiconductor film and method for forming oxide semiconductor film
To improve crystallinity of an oxide semiconductor. To provide a crystalline oxide semiconductor film in which a crystallized region extends to the interface...
US-9,577,105 Thin film transistor and thin film transistor array with semiconductor fragments
A thin film transistor based on carbon nanotubes comprises a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate...
US-9,577,104 COA substrate and liquid crystal display panel
A COA substrate is provided including a substrate base, a first metal layer, a first insulating layer, a semiconductor layer, a second metal layer, a color...
US-9,577,103 Liquid crystal display including a variable width spacer element and method for fabricating the same
A liquid crystal display with two insulating substrates. A first insulating substrate has crossing signal lines, a pixel electrode, and a drain electrode...
US-9,577,102 Method of forming gate and finFET
A method of forming a gate includes: forming a dummy gate; forming an inter layer dielectric (ILD) laterally adjacent to the dummy gate; doping a dopant into...
US-9,577,101 Source/drain regions for fin field effect transistors and methods of forming same
A method for forming a semiconductor device includes forming a fin extending upwards from a semiconductor substrate and forming a sacrificial layer on sidewalls...
US-9,577,100 FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the...
A semiconductor device including at least one suspended channel structure of a silicon including material, and a gate structure present on the suspended channel...
US-9,577,099 Diamond shaped source drain epitaxy with underlying buffer layer
A semiconductor structure includes a fin upon a semiconductor substrate. A clean epitaxial growth surface is provided by forming a buffer layer upon fin...
US-9,577,098 Semiconductor device and fabrication method thereof
A semiconductor device includes a gate electrode formed on a silicon substrate via a gate insulation film in correspondence to a channel region, source and...
US-9,577,097 Semiconductor device having stressor and method of forming the same
A semiconductor device having a stressor is provided. A first trench and a second trench spaced apart from each other are formed in a substrate. A channel area...
US-9,577,096 Salicide formation on replacement metal gate finFet devices
A fin field effect transistor (finFET) device and a method of fabricating a finFET are described. The method includes forming a replacement gate stack on a...
US-9,577,095 Semiconductor device
A semiconductor device includes a MISFET. The semiconductor device also includes a silicon nitride film 12 and a silicon nitride film 10 arranged on the silicon...
US-9,577,094 Low cost demos transistor with improved CHC immunity
An integrated circuit and method includes a DEMOS transistor with improved CHC reliability that has a lower resistance surface channel under the DEMOS gate that...
US-9,577,093 Vertical structure and method of forming semiconductor device
According to an exemplary embodiment, a method of forming a semiconductor device is provided. The method includes: providing a vertical structure over a...
US-9,577,092 Apparatuses having a vertical memory cell
Methods, apparatuses, and systems for providing a body connection to a vertical access device. The vertical access device may include a digit line extending...
US-9,577,091 Vertical transistor and manufacturing method thereof
A vertical transistor and a manufacturing method thereof are provided herein. The manufacturing method includes forming a first patterned conductive layer on a...
US-9,577,090 Semiconductor device and method of manufacturing the same
To satisfy both suppression of rise in contact resistance and improvement of breakdown voltage near the end part of a trench part. The trench part GT is...
US-9,577,089 Structures and methods of fabricating dual gate devices
First polysilicon (poly-1) is deposited into deep trenches that have been formed in a substrate. A first polysilicon polishing process is performed to planarize...
US-9,577,088 Semiconductor device with high concentration region
A semiconductor device includes a drift region of a first conductivity type, a channel forming region of a second conductivity type that is selectively provided...
US-9,577,087 Semiconductor apparatus
A semiconductor apparatus that has a first parallel pn-layer formed between an active region and an n.sup.+-drain region. A peripheral region is provided with a...
US-9,577,086 Semiconductor device
A device that increases a value of current flowing through a whole chip until a p-n diode in a unit cell close to a termination operates and reduces a size of...
US-9,577,085 Semiconductor device and method of manufacturing the same
A semiconductor device may include interlayer insulating layers stacked in a first direction and separated from each other, word lines formed between the...
US-9,577,084 Semiconductor device having a semiconductor layer stacked body
A semiconductor device includes a substrate, a semiconductor layer stacked body, and a source electrode and a drain electrode formed on the semiconductor layer...
US-9,577,083 Embedded hydrogen inhibitors for semiconductor field effect transistors
A field effect transistor (FET) device including a substrate and a plurality of semiconductor layers provided on the substrate, where a top semiconductor layer...
US-9,577,082 Semiconductor device
The semiconductor device includes: a plurality of interlayer insulation films, each interlayer insulation film covering a front surface of a corresponding one...
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