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Patent # Description
US-9,583,687 Semiconductor device, semiconductor device package, and lightning apparatus
A semiconductor device includes a light emitting structure, and an interconnection bump including an under bump metallurgy (UBM) layer disposed on an electrode...
US-9,583,686 Light-emitting-device package and production method therefor
A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first...
US-9,583,685 Light-emitting-device package and production method therefor
A light-emitting-device package according to one aspect of the present invention includes: a metal substrate; a light emitting device disposed on a first...
US-9,583,684 Edge coupling alignment using embedded features
Methods and systems may provide an alignment scheme for components that may reduce positional deviation between the components. The method may include placing a...
US-9,583,683 Light emitting devices with optical elements and bonding layers
Light emitting devices with improved light extraction efficiency are provided. The light emitting devices have a stack of layers including semiconductor layers...
US-9,583,682 Light-emitting device and method of manufacturing the same
A light-emitting device includes a plurality of light-emitting elements face-down mounted on a substrate, a phosphor-containing film on the plurality of...
US-9,583,681 Light emitter device packages, modules and methods
Light emitter device packages, modules and methods are disclosed having a body and a cavity that can be formed from a single substrate of material. The material...
US-9,583,680 Transparent conductive structure, device comprising the same, and the manufacturing method thereof
An optical electrical device comprises a base and a transparent conductive structure on the base is disclosed. The base further comprises a light-emitting...
US-9,583,679 P-contact with more uniform injection and lower optical loss
The current distribution across the p-layer (130) of a semiconductor device is modified by purposely inhibiting current flow through the p-layer (130) in...
US-9,583,678 High-performance LED fabrication
High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a...
US-9,583,677 Light-emitting diode having a roughened surface
A method of manufacturing a light-emitting diode comprises the steps of providing a substrate comprising an upper surface and a bottom surface opposite to the...
US-9,583,676 Low warpage wafer bonding through use of slotted substrates
In a wafer bonding process, one or both of two wafer substrates are scored prior to bonding. By creating slots in the substrate, the wafer's characteristics...
US-9,583,675 White LED
A white LED includes a P-type layer, a tunneling structure, an N-type layer, an N-type electrode, and a P-type electrode. The tunneling structure is in contact...
US-9,583,674 Method for producing semiconductor light emitting element
A method for producing a semiconductor light emitting element includes a wafer preparation step, a first irradiation step, a second irradiation step, and a...
US-9,583,673 Semiconductor light emitting device including GaAs substrate
A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on...
US-9,583,672 Nano-structured light-emitting device and methods for manufacturing the same
A nano-structured light-emitting device including a first semiconductor layer; a nano structure formed on the first semiconductor layer. The nano structure...
US-9,583,671 Quantum efficiency of multiple quantum wells
Improved quantum efficiency of multiple quantum wells. In accordance with an embodiment of the present invention, an article of manufacture includes a p side...
US-9,583,670 Luminescence conversion element and optoelectronic semiconductor component comprising such a luminescence...
A luminescence conversion element for wavelength conversion of primary electromagnetic radiation into secondary electromagnetic radiation includes first...
US-9,583,669 Inkjet printable etch resist
The methods involve selectively depositing a resist containing a solid hydrogenated rosin resin and a liquid hydrogenated rosin resin ester as a mixture on a...
US-9,583,668 Semiconductor device
The invention provides a method for increasing the usable surface area of a semiconductor wafer having a substantially planar surface and a thickness dimension...
US-9,583,667 Systems and methods for forming solar cells with CuInSe.sub.2 and Cu(In,Ga)Se.sub.2 films
Systems and methods for forming solar cells with CuInSe.sub.2 and Cu(In,Ga)Se.sub.2 films are provided. In one embodiment, a method comprises: during a first...
US-9,583,666 Wafer level packaging for proximity sensor
A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor...
US-9,583,665 PIN diode with nanoclusters
A diode for detecting the presence of radiation includes a P region, an N region, an intrinsic region located between the P region and the N region, and a layer...
US-9,583,664 Ge/Si avalanche photodiode with integrated heater and fabrication method thereof
Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In...
US-9,583,663 Power source for an accommodating intraocular lens
A power supply including a luminescent solar concentrator (LSC) adapted for placement in an eye includes a base material transparent to visible light; and...
US-9,583,662 Light weight solar concentrator
A solar concentrator has frame members connected together to form a framework, and a flexible sheet attached to the framework such that the flexible sheet takes...
US-9,583,661 Grid for plasma ion implant
A grid for minimizing effects of ion divergence in plasma ion implant. The plasma grid is made of a flat plate having a plurality of holes, wherein the holes...
US-9,583,660 Method for manufacturing a photovoltaic module with annealing for forming a photovoltaic layer and electrically...
The invention relates to a method for manufacturing a photovoltaic module comprising plurality of solar cells in a thin-layer structure, in which the following...
US-9,583,659 Solar cell module
Disclosed is a solar cell module. The solar cell module includes a substrate including at least one hole, and a first surface and a second surface opposite to...
US-9,583,658 Solar cell panels and method of fabricating same
A solar cell panel and method of forming a solar cell panel. The method includes a: forming an electrically conductive bus bar on a top surface of a bottom...
US-9,583,657 Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates
A polymer substrate and back contact structure for a photovoltaic element, and a photovoltaic element include a CIGS photovoltaic structure, a polymer substrate...
US-9,583,656 Photoelectric conversion element
A photoelectric conversion element according to the present invention includes a photoelectric conversion layer. The photoelectric conversion layer includes a...
US-9,583,655 Method of making photovoltaic device having high quantum efficiency
A method of fabricating a photovoltaic device includes forming an absorber layer comprising an absorber material above a substrate, forming a buffer layer over...
US-9,583,654 Light receiving device and image sensor
A light receiving device includes a substrate having a principal surface and a back surface, the substrate containing GaSb semiconductor co-doped with a p-type...
US-9,583,653 Solar cell and fabrication method thereof
A fabrication method of a solar cell, the method includes doping a silicon substrate having a first conductive type impurity with a second conductive type...
US-9,583,652 Method for the wet-chemical etching back of a solar cell emitter
A method for the wet-chemical etching of a highly doped silicon layer in an etching solution is provided. The method includes using, as an etching solution so...
US-9,583,651 Systems and methods for enhanced light trapping in solar cells
Methods for improving the light trapping characteristics of crystalline silicon solar cells are provided. In one embodiment, the backside surface of a...
US-9,583,650 Integrated plasmonic circuit and method of manufacturing the same
Provided are a integrated plasmonic circuit including a plasmonic source using a surface plasmon resonance phenomenon, a plasmonic detector detecting an optical...
US-9,583,649 Thin film solar cell backside contact manufacturing process
Embodiments of the invention related to a method for manufacturing a thin film solar cell backside contact. Prior to application of materials, a planar...
US-9,583,648 Solar cell
A solar cell includes a substrate of a first conductive type, a plurality of first electrodes positioned on one surface of the substrate in parallel with one...
US-9,583,647 Solar cell element
A solar cell element includes: a transparent body; a Mg.sub.xAg.sub.1-x layer (0.001.ltoreq.x.ltoreq.0.045) having a thickness (2-13 nm); a ZnO layer having an...
US-9,583,646 Bottom-emitting substrate, display device and manufacturing method of substrate
A bottom-emitting substrate, a display device and a method for manufacturing the bottom emitting substrate are provided. The bottom-emitting substrate...
US-9,583,645 Photovoltaic system
Disclosed is a photovoltaic system including a power optimizer, capable of minimizing noise occurring due to shading, an error in an output power of a...
US-9,583,644 Semiconductor optical device
A semiconductor optical device has a substrate including a primary surface with first to fourth areas; a first conductivity-type semiconductor layer disposed on...
US-9,583,642 Diode
A diode has a multiple p-n junction body, anode and cathode electrodes, a short-circuit electrode, a guard ring, and an insulation film. The multiple p-n...
US-9,583,641 Semiconductor device and manufacturing method thereof
A manufacturing method of a semiconductor device includes the following steps. A plurality of select gates are formed on a memory region of a semiconductor...
US-9,583,640 Method including a formation of a control gate of a nonvolatile memory cell and semiconductor structure
A method comprises providing a semiconductor structure including a nonvolatile memory cell element comprising a floating gate, a select gate and an erase gate...
US-9,583,639 Nonvolatile memory device using two-dimensional material and method of manufacturing the same
Example embodiments relate to nonvolatile memory devices using a 2D material, and methods of manufacturing the nonvolatile memory device. The nonvolatile memory...
US-9,583,638 Transistors, methods of manufacturing a transistor and electronic devices including a transistor
A transistor, a method of manufacturing a transistor, and an electronic device including a transistor are provided, the transistor may include a channel layer...
US-9,583,637 Amorphous oxide and field effect transistor
A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals.
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