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Methods for producing integrated circuits using long and short regions and
integrated circuits produced from...
Integrated circuits and methods for producing the same are provided. In an exemplary embodiment, a method for producing an integrated circuit includes forming a...
Semiconductor device with nanowires in different regions at different
A semiconductor device has gate-all-around devices formed in respective regions on a substrate. The gate-all-around devices have nanowires at different levels....
Semiconductor integrated device
According to one embodiment, a semiconductor integrated device includes a first node that receives a first voltage, a second node that receives a second...
Discontinuities in a semiconductor device to accommodate for manufacturing
variations and/or misalignment...
An integrated circuit is described as having one or more contact regions to provide one or more interconnections between one or more transistors of the...
Manufacturing method of the semiconductor device electrode having three
A manufacturing method of a semiconductor device, includes: a stacking process of forming an electrode by stacking a plurality of electrode layers on a...
Poly sandwich for deep trench fill
A semiconductor device is formed by forming a deep trench in a substrate and a dielectric liner on sidewalls of the deep trench. A first undoped polysilicon...
Semiconductor device including an edge area and method of manufacturing a
A semiconductor portion of a semiconductor device includes a semiconductor layer with a drift zone of a first conductivity type and at least one impurity zone...
Semiconductor device and manufacturing method thereof
A semiconductor device includes a substrate, a first nitride semiconductor layer on the substrate, a second nitride semiconductor layer on the first nitride...
Semiconductor device and method for driving the same
Disclosed is a semiconductor device having a memory cell which comprises a transistor having a control gate and a storage gate. The storage gate comprises an...
Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride...
Epitaxial buffer layers for group III-N transistors on silicon substrates
Embodiments include epitaxial semiconductor stacks for reduced defect densities in III-N device layers grown over non-III-N substrates, such as silicon...
Compound semiconductor device and method of fabricating the same
A compound semiconductor device is disclosed. The compound semiconductor device comprises a substrate having at least a first doped region and at least a second...
FinFET devices having silicon germanium channel fin structures with
Methods are provided to fabricate semiconductor devices, e.g., FinFET devices, having fin channel structures formed of silicon-germanium alloy layers with...
Dislocation in SiC semiconductor substrate
A semiconductor substrate has a main surface and formed of single crystal silicon carbide. The main surface includes a central area, which is an area other than...
Oxide semiconductor stacked film and semiconductor device
An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided....
Profile control over a collector of a bipolar junction transistor
Device structures for a bipolar junction transistor. A layer is formed on a top surface of a substrate. A trench is formed in the layer and has a plurality of...
Semiconductor structure and manufacturing method thereof
The present invention provides a semiconductor structure, including a substrate, a shallow trench isolation (STI) disposed in the substrate, a plurality of...
III-V gate-all-around field effect transistor using aspect ratio trapping
A field effect transistor includes a trench in a field dielectric material on a crystalline silicon substrate and source/drain features inside the trench. The...
Reduced scale resonant tunneling field effect transistor
An embodiment includes a heterojunction tunneling field effect transistor including a source, a channel, and a drain; wherein (a) the channel includes a major...
Semiconductor device with isolating layer on side and bottom surfaces
A method for manufacturing a semiconductor device comprises includes providing a substrate with a surface, forming an isolating layer on part of the surface,...
A structure comprises a p-type substrate, a deep n-type well and a deep p-type well. The deep n-type well is adjacent to the p-type substrate and has a first...
Conformal doping for punch through stopper in fin field effect transistor
A method of forming a punch through stop region that includes forming isolation regions of a first dielectric material between adjacent fin structures and...
Reduction of defect induced leakage in III-V semiconductor devices
A semiconductor device includes a semiconductor substrate and a p-doped layer formed on the substrate having a dislocation density exceeding 10.sup.8 cm.sup.-2....
Schottky diodes with mesh style region and associated methods
A Schottky diode comprising a cathode region, an anode region and a guard ring region, wherein the anode region may comprise a metal Schottky contact, and the...
Power semiconductor device of stripe cell geometry
A power semiconductor device of stripe cell geometry including a substrate, a plurality of striped power semiconductor units, and a guard ring structure is...
Capacitor having a top compressive polycrystalline plate
In one embodiment a method of forming a compressive polycrystalline semiconductive material layer is disclosed. The method comprises forming a polycrystalline...
High breakdown voltage microelectronic device isolation structure with
A microelectronic device contains a high voltage component having a high voltage node and a low voltage node. The high voltage node is isolated from the low...
Integrated circuits including a MIMCAP device and methods of forming the
same for long and controllable...
Integrated circuits including a MIMCAP device and methods of forming the integrated circuits are provided. An exemplary method of forming an integrated circuit...
Process-compatible decoupling capacitor and method for making the same
Provided is a method of forming a decoupling capacitor device and the device thereof. The decoupling capacitor device includes a first dielectric layer portion...
Semiconductor device having inductor
A semiconductor device including a first insulating layer and a second insulating layer sequentially disposed on a substrate having a center region. The...
Adjustable ground shielding circuitry
An integrated circuit (IC) die may include a substrate layer and an inductor with an associated capacitance formed on one of multiple metal layers above the...
Organic light emitting display device
An organic light emitting display device includes a substrate a plurality of pixels disposed along a first direction and a second direction, the first direction...
Organic light emitting diode display
An organic light emitting diode display includes a substrate; a gate wire on the substrate; an interlayer insulating layer covering the gate wire; a data wire...
OLED array substrate, method for fabricating the same, and display device
Embodiments provide an OLED array substrate, a method for fabricating the same, and a display device. The present invention relates to the field of display...
A display device includes a plurality of pixel electrodes, a common electrode disposed from a display area to a peripheral area continuously, a light emitting...
Organ light emitting display device
An organic light emitting display device includes a substrate including a plurality of pixel regions each including a light emitting region and a transparent...
Organic light emitting display device comprising light-shielding patterns
and method for manufacturing the same
Provided are an organic light emitting display (OLED) device and method for manufacturing the same. The OLED device includes: a plurality of gate lines in one...
Organic light-emitting display apparatus and method of manufacturing the
An organic light-emitting display apparatus includes a plurality of pixels provided on a substrate, wherein each of the plurality of pixels includes: a first...
Organic light emitting device and method of fabricating the same
An organic light emitting device and a method of fabricating the same includes a first substrate; a thin film transistor (TFT) on the first substrate; a...
Light emitting device
An object of the present invention is to provide a light emitting device in which variations in an emission spectrum depending on a viewing angle with respect...
Organic EL display device
A bank partitions a plurality of pixels and has an opening in each of the plurality of pixels. An organic layer includes a light emitting layer, and covers the...
Antireflection film and organic light emitting device including the same
An organic light emitting device includes an anti-reflection film including a polarizer and a compensation film positioned on the polarizer and including a...
Organic light emitting display apparatus
An organic light emitting display apparatus includes: a plurality of pixels at a display area; a plurality of dummy pixels at a dummy area; and a plurality of...
Organic light-emitting device
The present invention provides an organic light emitting device including: a substrate; and two or more stacked light emitting elements, which comprise a first...
Use of self-assembled layers for checking the threshold voltage of organic
The invention relates to an electronic device comprising at least two organic transistors having different threshold voltages. The device comprises at least two...
Word line connection for memory device and method of making thereof
A three-dimensional monolithic memory device includes at least one device region and a plurality of contact regions each including a stack of an alternating...
Semiconductor memory device having crossing interconnects separated by
According to one embodiment, a semiconductor memory device includes a plurality of first interconnects extending in a first direction, a plurality of second...
Resistance-change semiconductor memory
According to one embodiment, a memory includes first to fourth memory cells aligned in a first direction. Each of the first to fourth memory cells comprises a...
Memory device and method for manufacturing the same
A memory device having an array area and a periphery area is provided. The memory device includes a substrate, an isolation layer formed in the substrate, a...
Magnetoresistive memory device and manufacturing method of the same
According to one embodiment, a magnetoresistive memory device includes a substrate, a first oxide film provided on the substrate, bottom electrodes provided in...