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Patent # Description
US-9,589,820 Semiconductor apparatus and adjustment method
A semiconductor apparatus is provided. The semiconductor apparatus includes a wafer chuck configured to hold a wafer, and a first nozzle configured to dispense...
US-9,589,819 Substrate processing apparatus
A substrate processing apparatus includes a robot having: an end effector, a first link structure including a fixing portion having a front end to which the end...
US-9,589,818 Apparatus for liquid treatment of wafer shaped articles and liquid control ring for use in same
An apparatus for treating a wafer-shaped article includes a rotary chuck configured to hold a wafer-shaped article of a predetermined diameter such that a...
US-9,589,817 Dryer
A dryer comprising an enclosure and a transporter for transporting one or more components therethrough between a first and a second opening. The dryer includes...
US-9,589,816 Blanket, printing process, and a method of manufacturing display unit and electronic apparatus
A blanket includes a releasable base; and a sacrificial layer being provided on the base and separated from the base in printing.
US-9,589,815 Semiconductor IC packaging methods and structures
An IC packaging method is provided. The method includes providing a semiconductor substrate. The semiconductor substrate has a metal pad and an insulating layer...
US-9,589,814 Semiconductor device packages and methods of manufacturing the same
A semiconductor device package may include: a semiconductor chip element; and a supporting structure on which the semiconductor chip element is mounted and...
US-9,589,813 Stage unit and laser annealing apparatus including the same
A stage unit may include a frame, a first guide device, a stage, a second guide device and a pad. The first guide device may be arranged over an upper surface...
US-9,589,812 Fabrication method of semiconductor piece
A fabrication method of a semiconductor piece includes forming a groove that has a first groove portion, and a second groove portion which is a groove portion...
US-9,589,811 FinFET spacer etch with no fin recess and no gate-spacer pull-down
A method may include providing a patterned feature extending from a substrate plane of a substrate, the patterned feature including a semiconductor portion and...
US-9,589,810 Manufacturing method of power MOSFET using a hard mask as a CMP stop layer between sequential CMP steps
A manufacturing method of a power MOSFET employs a hard mask film over a portion of the wafer surface as a polishing stopper, between two successive polishing...
US-9,589,809 Method of depositing tungsten layer with improved adhesion and filling behavior
A method of depositing a tungsten (W) layer is disclosed. In one aspect, the method includes depositing a SiH.sub.4 base W film on a surface of a substrate to...
US-9,589,808 Method for depositing extremely low resistivity tungsten
Methods for depositing extremely low resistivity tungsten in semiconductor processing are disclosed herein. Methods involve annealing the substrate at various...
US-9,589,807 Method for eliminating interlayer dielectric dishing and controlling gate height uniformity
A method for eliminating interlayer dielectric (ILD) dishing and controlling gate height uniformity is provided. Embodiments include forming a plurality of...
US-9,589,806 Integrated circuit with replacement gate stacks and method of forming same
An IC structure including: a first replacement gate stack for the pFET, the first replacement gate stack including: an interfacial layer in a first opening in...
US-9,589,805 Split-gate semiconductor device with L-shaped gate
A semiconductor device having a substrate, a dielectric layer over the substrate, a first gate conductor, an inter-gate dielectric structure and a second gate...
US-9,589,804 Method of forming finFET gate oxide
A semiconductor device includes a semiconductor fin, a lining oxide layer, a silicon nitride based layer and a gate oxide layer. The semiconductor fin has a top...
US-9,589,803 Gate electrode of field effect transistor
This description relates to a gate electrode of a field effect transistor. An exemplary structure for a field effect transistor includes a substrate; a gate...
US-9,589,802 Damage free enhancement of dopant diffusion into a substrate
A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant...
US-9,589,801 Methods for wafer bonding and for nucleating bonding nanophases using wet and steam pressurization
Substrates may be bonded according to a method comprising contacting a first bonding surface of a first substrate with a second bonding surface of a second...
US-9,589,800 Method for integrated circuit patterning
A method of forming a target pattern includes forming a plurality of lines over a substrate and forming spacer features on sidewalls of the lines. The method...
US-9,589,799 High selectivity and low stress carbon hardmask by pulsed low frequency RF power
Methods of forming high etch selectivity, low stress ashable hard masks using plasma enhanced chemical vapor deposition are provided. In certain embodiments,...
US-9,589,798 Method of making a semiconductor device using a barrier and antireflective coating (BARC) layer
A method of forming a semiconductor device includes forming a dielectric layer over a substrate. The method includes forming a layer set over the dielectric...
US-9,589,797 Tools and methods for producing nanoantenna electronic devices
The present disclosure advances the art by providing a method and system for forming electronic devices. In particular, and by example only, methods are...
US-9,589,796 Method of defining poly-silicon growth direction
The present invention relates to a method of defining poly-silicon growth direction. The method of defining poly-silicon growth direction comprises Step 1,...
US-9,589,795 Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same
In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed...
US-9,589,794 Hot-wire method for depositing semiconductor material on a substrate and device for performing the method
A hot wire device and method for depositing semiconductor material onto a substrate in a deposition chamber in which the ends of at least two filaments are...
US-9,589,793 Laterally varying II-VI alloys and uses thereof
Described herein are semiconductor structures comprising laterally varying II-VI alloy layer formed over a surface of a substrate. Further, methods are provided...
US-9,589,792 High quality group-III metal nitride crystals, methods of making, and methods of use
High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of...
US-9,589,791 Compound finFET device including oxidized III-V fin isolator
A semiconductor device includes a wafer having a bulk layer and a III-V buffer layer on an upper surface of the bulk layer. The semiconductor device further...
US-9,589,790 Method of depositing ammonia free and chlorine free conformal silicon nitride film
Provided herein are methods of depositing conformal silicon nitride films using atomic layer deposition by exposure to a halogen-free, N--H-bond-free, and...
US-9,589,789 Compositions of low-K dielectric sols containing nonmetallic catalysts
A sol composition for producing a porous low-k dielectric material is provided. The composition can include at least one silicate ester, a polar solvent, water,...
US-9,589,788 Polymer with a good heat resistance and storage stability, underlayer film composition containing the polymer...
Provided are a polymer for an underlayer film, used in semiconductor and display manufacturing processes, an underlayer film composition for semiconductor and...
US-9,589,787 Manufacturing method of semiconductor device
The present invention makes it possible to increase the reliability of a semiconductor device. A manufacturing method of a semiconductor device according to the...
US-9,589,786 Method for polishing a polymer surface
A method for polishing a polymer surface is provided by an embodiment of the present invention. The method includes: curing the polymer surface; polishing the...
US-9,589,785 Cleaning method and composition in photolithography
The present disclosure provides one embodiment of a method. The method includes applying a first cleaning fluid to a substrate, thereby cleaning the substrate...
US-9,589,784 Illuminant and operating method therefor
The invention relates to an illuminant having a gas volume and a coaxial HF energy coupling device for the excitation thereof using surface waves. It is...
US-9,589,783 Method for improving the wettability of a rotating electrode in a gas discharge lamp
The present invention relates to a method for improving the wettability of a rotating electrode with a liquid medium in a discharge lamp, in particular for the...
US-9,589,782 Charged droplets generating apparatus including a gas conduit for laminarization of gas flows
Techniques are provided for generating charged droplets of liquid entrained within a gas flow within a vacuum chamber and for controlling the gas flow. The gas...
US-9,589,781 Ion guide and mass spectrometer
A curved ion guide includes four curved rod electrodes arranged around a curved central axis, two deflecting auxiliary electrodes which face each other across...
US-9,589,780 Systems and methods of suppressing unwanted ions
Certain embodiments described herein are directed to systems including a cell downstream of a mass analyzer. In some instances, the cell is configured as a...
US-9,589,779 Sample analysis for mass cytometry
The invention relates to methods and devices for analysis of samples using laser ablation inductively coupled plasma mass spectrometry (LA-ICP-MS). The...
US-9,589,778 Multi-dopant permeation tube with two chambers for introducing dopants into a spectrometry system
Aspects and embodiments of the present invention are directed to spectrometry systems and for apparatus and methods for delivering dopants to same. In one...
US-9,589,777 Control of ions
A guide apparatus includes a vacuum compartment provided at a background pressure and having a gas inlet opening arranged for jetting a gas in the form of a...
US-9,589,776 Ruggedized advanced identification mass spectrometer
A dual-ionization mass spectrometer includes a first mass spectrometer module forming a hard ionization mass spectrometer, a second mass spectrometer forming a...
US-9,589,775 Plasma cleaning for mass spectrometers
A mass spectrometry (MS) system may be cleaned by generating plasma and contacting an internal surface of the system to be cleaned with the plasma. The system...
US-9,589,774 Electron multiplier and photomultiplier including the same
The present invention relates to an electron multiplier and others to effectively suppress luminescence noise, even in compact size, in which each of multistage...
US-9,589,773 In-situ etch rate determination for chamber clean endpoint
Embodiments described herein relate to methods for determining a cleaning endpoint. A first plasma cleaning process may be performed in a clean chamber...
US-9,589,772 Plasma generation source including belt-type magnet and thin film deposition system using this
The present invention is a plasma generation source and a thing that is in its application and it is for getting high quality thin film by generating even high...
US-9,589,771 Plasma processing apparatus
Disclosed is a plasma processing apparatus capable of more accurately controlling plasma. The plasma processing apparatus includes a shower head provided within...
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