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Patent # Description
US-9,595,639 Light emitting device and light emitting device package
A light emitting device includes a light emitting structure provided over a first substrate and including at least a first conductive semiconductor layer; an...
US-9,595,638 Light emitting diode package and method for manufacturing the same
The present invention relates to a nitride light emitting diode (LED) package, and more specifically, to a nitride light emitting diode package which can...
US-9,595,637 Nanostructure semiconductor light emitting device having rod and capping layers of differing heights
There is provided a semiconductor light-emitting device including a base layer formed of a first conductivity-type semiconductor material, and a plurality of...
US-9,595,636 Light emitting device substrate with inclined sidewalls
A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure...
US-9,595,635 Point source light-emitting diode
The present invention relates to a point source light-emitting diode containing a support substrate, a metal layer, a first conduction-type layer, an active...
US-9,595,634 Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions...
US-9,595,633 Method for producing light-emitting device and method for producing group III nitride semiconductor
On the well layer, a first InGaN protective layer is formed at the same temperature employed for the well layer through MOCVD. TMI is pulse supplied. A TMI...
US-9,595,632 Method for producing GaN-based crystal and semiconductor device
A method for producing a GaN-based crystal includes forming a Zinc-blend type BP crystal layer on a Si substrate; forming an In-containing layer, on the BP...
US-9,595,631 Semiconductor light emitting device and method of manufacturing the same
According to one embodiment, a semiconductor light-emitting device includes a semiconductor layer having a first layer including an n-type semiconductor, a...
US-9,595,630 Solar cell sealing material, method for manufacturing solar cell sealing material, and solar cell module
An encapsulating material for solar cell containing an ethylene/.alpha.-olefin copolymer satisfying the following a1) and a2), and a specific peroxyketal having...
US-9,595,629 Enhancing planarization uniformity in optical devices
An optical device is formed from a device precursor having a layer of a light-transmitting medium on a base. A first feature is formed on the device precursor....
US-9,595,628 Microstructured silicon radiation detector
A radiation detector comprises a silicon body in which are defined vertical pores filled with a converter material and situated within silicon depletion...
US-9,595,627 Photovoltaic panel
A photovoltaic system comprising a first photovoltaic panel configured to collect direct light; and a second photovoltaic panel configured to collect, at least,...
US-9,595,626 Method for manufacturing photovoltaic panels by the use of a polymeric tri-layer comprising a composite getter...
The present invention relates to a method for manufacturing thin-film photovoltaic panels by the use of a sealing means composed by a polymeric tri-layer...
US-9,595,625 Nanoparticle material and light-emitting device
Quantum dots (nanoparticle material) each having a core-shell structure including a core part and a shell part that protects the core part. The shell part of...
US-9,595,624 Strain engineered bandgaps
An optoelectronic device as well as its methods of use and manufacture are disclosed. In one embodiment, the optoelectronic device includes a first...
US-9,595,623 PCSS-based semiconductor device, switching device, and method
A present novel and non-trivial semiconductor device, switch device and method performed by the switch device is disclosed. A semiconductor device for...
US-9,595,622 Structures and methods for high-efficiency pyramidal three-dimensional solar cells
The present disclosure enables high-volume cost effective production of three-dimensional thin film solar cell (3-D TFSC) substrates. Pyramid-like unit cell...
US-9,595,621 MOS capacitors flow type devices and methods of forming the same
A capacitor structure is described. The capacitor structure includes a substrate; a source/drain region formed in the substrate to form an active area, the...
US-9,595,620 MOS varactors and semiconductor integrated devices including the same
A MOS varactor includes a first N-type junction region and a second N-type junction region spaced apart from each other by a channel region, a gate insulation...
US-9,595,619 Semiconductor device with different contact regions
A semiconductor device includes at least one first contact region of a vertical device between a semiconductor substrate and an electrically conductive...
US-9,595,618 Semiconductor devices with heterojunction barrier regions and methods of fabricating same
An electronic device includes a silicon carbide layer including an n-type drift region therein, a contact forming a junction, such as a Schottky junction, with...
US-9,595,617 MOS P-N junction diode with enhanced response speed and manufacturing method thereof
A MOS P-N junction diode includes a semiconductor substrate, a mask layer, a guard ring, a gate oxide layer, a polysilicon structure, a central conductive...
US-9,595,616 Vertical III-nitride thin-film power diode
A vertical III-nitride thin-film power diode can hold off high voltages (kV's) when operated under reverse bias. The III-nitride device layers can be grown on a...
US-9,595,614 Semiconductor structures and methods with high mobility and high energy bandgap materials
An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first...
US-9,595,613 Forming semiconductor fins with self-aligned patterning
A method for fabricating a semiconductor device comprises removing a portion of a substrate to form a first cavity in the substrate and depositing an insulator...
US-9,595,612 Semiconductor device and method of fabricating the same
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the...
US-9,595,611 FinFET with a single contact to multiple fins bridged together to form a source/drain region of the transistor
A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a...
US-9,595,610 Field effect transistor and method of fabricating the same
A MOSFET may be formed with a strain-inducing mismatch of lattice constants that improves carrier mobility. In exemplary embodiments a MOSFET includes a...
US-9,595,609 Semiconductor device including superjunction structure formed using angled implant process
A semiconductor device includes a superjunction structure formed using simultaneous N and P angled implants into the sidewall of a trench. The simultaneous N...
US-9,595,608 Semiconductor device
An n.sup.- drift region is disposed on the front surface of an n.sup.+ semiconductor substrate composed of a wide band gap semiconductor. A p-channel region is...
US-9,595,607 Facilitation of increased locking range transistors
Transistors can be used for a variety of electronic-based applications. Therefore, transistor efficiency and performance is of importance. An apparatus is...
US-9,595,606 Field-effect transistor
A field-effect transistor includes a codoped layer made of Al.sub.xGa.sub.1-xN (0.ltoreq.x.ltoreq.1) and formed on a p-type Si substrate, a GaN layer formed on...
US-9,595,605 Vertical single electron transistor formed by condensation
A method for forming a vertical single electron transistor includes forming a heterostructured nanowire having a SiGe region centrally disposed between an upper...
US-9,595,604 Electronic element
Provided is an electronic element that functions as a switch or memory without using metal nanoparticle. The electronic element includes: one electrode 5A and...
US-9,595,603 Semiconductor device
A semiconductor device includes a semiconductor layer and a trench gate portion that extends toward a deep portion from a front surface of the semiconductor...
US-9,595,602 Switching device for power conversion and power conversion device
The present invention provides a switching device (100) for power conversion in which a first gate electrode (6), a p-type channel layer (2) having an n-type...
US-9,595,601 Method of fabricating thin-film semiconductor substrate
A method of fabricating a thin-film transistor substrate including a thin-film semiconductor includes: forming a metal film mainly comprising Cu above a...
US-9,595,600 Semiconductor device and method for manufacturing the same
An object is to provide a high reliability thin film transistor using an oxide semiconductor layer which has stable electric characteristics. In the thin film...
US-9,595,599 Dielectric isolated SiGe fin on bulk substrate
A method for forming fins on a semiconductor device includes etching trenches into a monocrystalline substrate to form first fins and forming a first dielectric...
US-9,595,598 Semiconductor device including epitaxially formed buried channel region
A semiconductor device includes at least one semiconductor fin on an upper surface of a substrate. The at least one semiconductor fin includes a channel region...
US-9,595,597 Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain
A semiconductor device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The semiconductor fin includes a channel region...
US-9,595,596 Superjunction structures for power devices
In one general aspect, a power device can include an active region having a plurality of pillars of a first conductivity type alternately arranged with a...
US-9,595,595 Method of forming field effect transistors (FETs) with abrupt junctions and integrated circuit chips with the FETs
A method of forming field effect transistors (FETs) and on Integrated Circuit (IC) chips with the FETs. Channel placeholders at FET locations are undercut at...
US-9,595,594 Compound semiconductor device and method for manufacturing the same
A compound semiconductor device includes: a compound semiconductor region having a surface in which a step is formed; a first electrode formed so as to overlie...
US-9,595,593 Semiconductor structure with interfacial layer and method for manufacturing the same
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and an interfacial layer formed over...
US-9,595,592 Forming dual contact silicide using metal multi-layer and ion beam mixing
A method for forming contact silicide for a semiconductor structure. In one embodiment, a dielectric layer is formed over a p-type region of a semiconductor...
US-9,595,591 Semiconductor device and method for manufacturing same
One device includes a substrate which contains a well region of one conductivity type, an element isolation insulating film which is arranged within the well...
US-9,595,590 Semiconductor device and method for manufacturing the same
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes a well region, a drain region and a source region...
US-9,595,589 Transistor with performance boost by epitaxial layer
The present disclosure relates to a transistor device. In some embodiments, the transistor device has an epitaxial layer disposed over a substrate. The...
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