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Patent # Description
US-9,595,588 Semiconductor device with embedded cell and method of manufacturing the same
A semiconductor device with embedded cell is provided. A silicon substrate has a first area with at least one first cell and a second area with at least one...
US-9,595,587 Split poly connection via through-poly-contact (TPC) in split-gate based power MOSFETs
Embodiments of the present disclosure provide a contact structure in a split-gate trench transistor device for electrically connecting the top electrode to the...
US-9,595,586 Schottky barrier diode
A semiconductor device, includes an n-type semiconductor layer provided with a first semiconductor layer with a low electron carrier concentration and a second...
US-9,595,585 Methods for high-k metal gate CMOS with SiC and SiGe source/drain regions
A method of manufacturing a semiconductor device includes forming a PMOS region and an NMOS region in a semiconductor substrate, forming dummy gate structures...
US-9,595,584 Semiconductor device, and method for manufacturing semiconductor device
[Object] To provide a semiconductor device capable of improving a discharge starting voltage when measuring electric characteristics, and widening a pad area of...
US-9,595,583 Methods for forming FinFETS having a capping layer for reducing punch through leakage
A method for forming FinFETs having a capping layer for reducing punch through leakage includes providing an intermediate semiconductor structure having a...
US-9,595,582 Layouts and vertical structures of MOSFET devices
A metal-oxide-semiconductor field-effect transistor device includes a first active area, a first gate electrode configured to cross the first active area and...
US-9,595,581 Silicon and silicon germanium nanowire structures
Methods of forming microelectronic structures are described. Embodiments of those methods include forming a nanowire device comprising a substrate comprising...
US-9,595,580 Two-dimensional (2D) material element with in-plane metal chalcogenide-based heterojunctions and devices...
According to example embodiments, a two-dimensional (2D) material element may include a first 2D material and a second 2D material chemically bonded to each...
US-9,595,579 Dual shallow trench isolation (STI) structure for field effect transistor (FET)
Various embodiments include structures for field effect transistors (FETs). In various embodiments, a structure for a FET includes: a deep n-type well; a...
US-9,595,578 Undercut insulating regions for silicon-on-insulator device
A method of making a silicon-on-insulator (SOI) semiconductor device includes etching an undercut isolation trench into an SOI substrate, the SOI substrate...
US-9,595,577 Semiconductor device with trench structure and methods of manufacturing
A vertical semiconductor device includes a semiconductor body having semiconductor portions of semiconductor elements of the vertical semiconductor device, a...
US-9,595,576 Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric...
An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric...
US-9,595,575 Organic light-emitting diode display
An organic light-emitting diode (OLED) display includes pixel electrodes, each pixel electrode corresponding to a pixel region disposed in a display region of a...
US-9,595,574 Organic light emitting diode display
An organic light emitting diode (OLED) display including a substrate main body; a driving circuit on the substrate main body; an organic light emitting element...
US-9,595,573 Display device having light-emitting elements including metals
A display device includes a plurality of light-emitting elements aligned on a TFT substrate in a formation of a matrix. The plurality of light-emitting elements...
US-9,595,572 Thin film encapsulation unit, organic light emitting diode display including the same and manufacturing method...
A thin film encapsulation unit including an inorganic layer, a first organic layer on the inorganic layer and including a light-blocking unit and a...
US-9,595,571 Light-emitting device, electronic device, and lighting device
A novel light-emitting device with small power consumption, which can be formed with high productivity, is provided. The light-emitting device includes a first...
US-9,595,570 Display device
A display device includes a reflection electrode located on a first substrate; a pixel electrode located above the reflection electrode; a common electrode...
US-9,595,569 Single photon device, apparatus for emitting and transferring single photon, and methods of manufacturing and...
Provided are single photon devices, single photon emitting and transferring apparatuses, and methods of manufacturing and operating the single photon devices....
US-9,595,568 Semiconductor memory device having unequal pitch vertical channel transistors employed as selection transistors...
A semiconductor device comprises a set of selection transistors, such as in a three-dimensional memory structure or stack having resistance change memory cells...
US-9,595,567 Semiconductor memory device with resistance change film and method of manufacturing the same
According to one embodiment, a semiconductor memory device includes a semiconductor substrate, a plurality of insulating layers, a plurality of first...
US-9,595,566 Floating staircase word lines and process in a 3D non-volatile memory having vertical bit lines
A 3D nonvolatile memory has memory elements arranged in a three-dimensional pattern with a plurality of memory layers stacked over a semiconductor substrate. It...
US-9,595,565 Memory structure
The present invention relates to a memory structure, which is a kind of resistive memory. A middle layer formed by a first dielectric film and a second...
US-9,595,564 Semiconductor memory device and method of manufacturing the same
The embodiments provide a semiconductor memory device including: a plurality of first wiring lines extending in a first direction, the first wiring lines being...
US-9,595,563 Nonvolatile memory device
A nonvolatile memory device includes: a pair of first wirings extending in a first direction; a second wiring extending in a second direction crossing the first...
US-9,595,562 Memory cell structure, method of manufacturing a memory, and memory apparatus
A memory cell structure, a method of manufacturing a memory, and a memory apparatus that conform a memory cell structure of an MRAM, which reduces resistance of...
US-9,595,561 Semiconductor memory devices
A semiconductor memory device includes a cell gate dielectric layer and a cell gate electrode disposed in a gate recess region crossing a cell active portion of...
US-9,595,560 Pumped pinned photodiode pixel array
The present invention relates to a pumped pixel that includes a first photo-diode accumulating charge in response to impinging photons, a second photo-diode,...
US-9,595,559 Imaging device and imaging system
An object of the present invention is to prevent a sensitivity difference between pixels. There are disposed plural unit cells each including plural photodiodes...
US-9,595,558 Photodiode architectures and image capture methods having a plurality of photodiode with a shared electrode
A photodiode architecture comprises first, second, and third independent photodiodes, and a shared electrode. The first, second, and third photodiodes are each...
US-9,595,557 Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device
The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can...
US-9,595,556 Image sensor for reducing crosstalk characteristic and method of manufacturing the same
An image sensor includes a plurality of photoelectric detectors, a plurality of color filters, and at least one pixel isolation region between adjacent ones of...
US-9,595,555 Pixel isolation regions formed with conductive layers
An image sensor may include isolation regions that are formed in between photodiodes. These isolation regions may prevent cross-talk and improve the performance...
US-9,595,554 Sensor arrangement with a silicon-based optical sensor and a substrate for functional layer systems
A sensor arrangement with a silicon-based optical sensor, particularly color sensors for colorimetric applications is disclosed. The invention aims to find a...
US-9,595,553 Optical modules including focal length adjustment and fabrication of the optical modules
Fabricating optical devices can include mounting a plurality of singulated lens systems over a substrate, adjusting a thickness of the substrate below at least...
US-9,595,552 Method of simultaneously manufacturing partially shielded pixels
A method of simultaneously manufacturing First and second pixels respectively shielded on a first and on a second side are simultaneously manufactured using a...
US-9,595,551 Solid-state imaging device and electronic apparatus
There is provided a solid-state imaging device that includes: colored pixels each including a first photoelectric conversion element and a colored filler; white...
US-9,595,550 CMOS three-dimensional image sensor detectors having reduced inter-gate capacitance, and enhanced modulation...
A CMOS detector with pairs of interdigitated elongated finger-like collection gates includes p+ implanted regions that create charge barrier regions that can...
US-9,595,549 Display device comprising a plurality of microcavities and an encapsulation layer that seals the plurality of...
A display device and a method of manufacturing the display device improve reliability by preventing contact between a color filter, a light blocking member and...
US-9,595,548 Method of manufacturing thin film transistor substrate having etched trenches with color filter material...
A method of manufacturing a color filter substrate includes forming a plurality of trenches having a predetermined depth by etching a surface of a transparent...
US-9,595,547 Array substrate and method for repairing broken data line
The invention discloses an array substrate, and a method for repairing a broken data line on an array substrate. The method for repairing a broken data line on...
US-9,595,546 Display backplane and method of fabricating the same
An organic light emitting display is provided. The organic light emitting display comprises a multi-type thin-film transistor (TFT) and an organic light...
US-9,595,545 Semiconductor device
A semiconductor device (100) includes: a first line (8) having a first end portion (8T); a second line (2) being insulated from the first line and having a...
US-9,595,544 Thin film transistor substrate and display device
The present invention provides a thin film transistor substrate and a display device that prevent peeling. The thin film transistor substrate includes: an...
US-9,595,543 Array substrate for liquid crystal display devices and method of manufacturing the same
An array substrate for LCD devices and a method of manufacturing the same are provided. By using a structure where an empty space is secured in a data line area...
US-9,595,542 Thin film transistor array panel and manufacturing method thereof
A thin film transistor array panel includes a first insulation substrate, a gate line and a data line which are positioned on the first insulation substrate,...
US-9,595,541 Semiconductor device
Provided is a semiconductor device including a transistor having excellent electrical characteristics (e.g., on-state current, field-effect mobility, or...
US-9,595,539 Array substrates and the manufacturing method thereof, and display panels of enhanced speed of film formation
The present disclosure relates to an array substrate and the manufacturing method thereof, and a display panel. The array substrate includes a substrate and a...
US-9,595,537 Display panel
A display panel is provided, which includes a first substrate, a first insulating layer on the first substrate, a semiconductor layer on the first insulating...
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