Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,601,634 Semiconductor device
A highly reliable semiconductor device which uses an oxide semiconductor film for a backplane is provided. A semiconductor device includes a first conductive...
US-9,601,633 Semiconductor device
An oxide semiconductor layer in which "safe" traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a...
US-9,601,632 Semiconductor device and method for fabricating the same
The on-state characteristics of a transistor are improved and thus, a semiconductor device capable of high-speed response and high-speed operation is provided....
US-9,601,631 Semiconductor device and method for manufacturing the same
A semiconductor device in which a shift of the threshold voltage of a transistor is suppressed is provided. A semiconductor device in which a decrease in the...
US-9,601,630 Transistors incorporating metal quantum dots into doped source and drain regions
Metal quantum dots are incorporated into doped source and drain regions of a MOSFET array to assist in controlling transistor performance by altering the energy...
US-9,601,629 Faceted finFET
Among other things, a semiconductor device comprising one or more faceted surfaces and techniques for forming the semiconductor device are provided. A...
US-9,601,628 Semiconductor device having asymmetric fin-shaped pattern
Semiconductor devices are provided including a first fin-shaped pattern having first and second sidewalls facing one another and a field insulating film...
US-9,601,627 Diode structure compatible with FinFET process
An embodiment integrated circuit (e.g., diode) and method of making the same. The embodiment integrated circuit includes a well having a first doping type...
US-9,601,626 Semiconductor device including fin structure with two channel layers and manufacturing method thereof
A semiconductor device includes a fin structure protruding from a substrate and having a top face and a first side face and a second side face opposite to the...
US-9,601,625 Guard ring structure of semiconductor arrangement
Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided. A semiconductor arrangement...
US-9,601,624 SOI based FINFET with strained source-drain regions
A method of fabricating a semiconductor device where: (i) the fins are formed over a porous semiconductor material layer (for example, a silicon layer); and...
US-9,601,623 Methods for forming semiconductor device structures
The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
US-9,601,622 Semiconductor device having curved gate electrode aligned with curved side-wall insulating film and...
A semiconductor device including a channel region formed in a semiconductor substrate; a source region formed on one side of the channel region; a drain region...
US-9,601,621 Semiconductor device including dual spacer and uniform epitaxial buffer interface of embedded SiGe source/drain
A semiconductor device includes at least one semiconductor fin on an upper surface of a semiconductor substrate. The semiconductor fin includes a channel region...
US-9,601,620 Transistor and fabrication method thereof
A method for forming transistors includes providing a substrate having at least a dummy gate structure having at least dummy gate layer; forming a first...
US-9,601,619 MOS devices with non-uniform P-type impurity profile
An integrated circuit structure include a semiconductor substrate, a gate stack over the semiconductor substrate, and an opening extending into the ...
US-9,601,618 Semiconductor device
A semiconductor device includes a fin-shaped semiconductor layer on a semiconductor substrate and that extends in a first direction with a first insulating film...
US-9,601,617 Fabrication of a transistor including a tunneling layer
In a particular embodiment, an apparatus includes an electron tunnel structure. The electron tunnel structure includes a tunneling layer, a channel layer, a...
US-9,601,616 Power MOSFETs and methods for forming the same
Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and methods of forming the same are provided. A power MOSFET may comprise a first drift...
US-9,601,615 High voltage double-diffused MOS (DMOS) device and method of manufacture
A method of forming an integrated DMOS transistor/EEPROM cell includes forming a first mask over a substrate, forming a drift implant in the substrate using the...
US-9,601,614 Composite semiconductor device with different channel widths
A device includes a semiconductor substrate, a first constituent transistor including a first plurality of transistor structures in the semiconductor substrate...
US-9,601,613 Gate pullback at ends of high-voltage vertical transistor structure
In one embodiment, a transistor includes a pillar of semiconductor material arranged in a racetrack-shaped layout having a substantially linear section that...
US-9,601,612 MOSFET having dual-gate cells with an integrated channel diode
A semiconductor device includes MOSFET cells having a drift region of a first conductivity type. A first and second active area trench are in the drift region....
US-9,601,611 Lateral/vertical semiconductor device with embedded isolator
A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The...
US-9,601,610 Vertical super junction III/nitride HEMT with vertically formed two dimensional electron gas
A HEMT device comprising a M-plane III-Nitride material substrate, a p-doped epitaxial layer of III-Nitride material grown on said substrate; a recess etched in...
US-9,601,609 Semiconductor device
Characteristics of a semiconductor device are improved. A semiconductor device includes a potential fixing layer, a channel underlayer, a channel layer, and a...
US-9,601,608 Structure for a gallium nitride (GaN) high electron mobility transistor
A high-electron mobility transistor (HEMT) device employing a gate protection layer is provided. A substrate has a channel layer arranged over the substrate and...
US-9,601,607 Dual mode transistor
A method includes biasing a first gate voltage to enable unipolar current to flow from a first region of a transistor to a second region of the transistor...
US-9,601,606 Integrated circuit heat dissipation using nanostructures
An approach for heat dissipation in integrated circuit devices is provided. A method includes forming an isolation layer on an electrically conductive feature...
US-9,601,605 Bipolar junction transistor with improved avalanche capability
A bipolar junction transistor (BJT), which includes a collector layer, a base layer on the collector layer, an emitter layer on the base layer, and a recess...
US-9,601,604 Current switching transistor
An electronic device and a method of fabricating an electronic device are disclosed. The device includes a body of semiconductor material, and a conductive...
US-9,601,603 Method for manufacturing semiconductor device
As a display device has a higher definition, the number of pixels, gate lines, and signal lines are increased. When the number of the gate lines and the signal...
US-9,601,602 Semiconductor device and manufacturing method thereof
Disclosed is a semiconductor device including an oxide semiconductor film. A first oxide semiconductor film with a thickness of greater than or equal to 2 nm...
US-9,601,601 Method for manufacturing transistor
A hydrogen barrier layer is selectively provided over an oxide semiconductor layer including hydrogen and hydrogen is selectively desorbed from a given region...
US-9,601,600 Processes for fabricating FinFET structures with semiconductor compound portions formed in cavities and...
A process for fabricating a fin-type field effect transistor (FinFET) structure is described. A semiconductor substrate is patterned to form a fin. A spacer is...
US-9,601,599 Aspect ratio for semiconductor on insulator
A method comprises forming one or more fins in a first region on an insulated substrate. The method also comprises forming one or more fins formed in a second...
US-9,601,598 Method of manufacturing a fin-like field effect transistor (FinFET) device
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a semiconductor substrate; a fin structure disposed...
US-9,601,597 Substantially planar electronic devices and circuits
A method of manufacturing a substantially planar electronic device is disclosed. The method employs a resist having three different thicknesses used for...
US-9,601,596 Electronic device and method of manufacturing semiconductor device
There is provided an electronic device including at least a first electrode, a second electrode disposed to be spaced apart from the first electrode, and an...
US-9,601,595 High breakdown voltage LDMOS device
A multi-region (81, 83) lateral-diffused-metal-oxide-semiconductor (LDMOS) device (40) has a semiconductor-on-insulator (SOI) support structure (21) on or over...
US-9,601,594 Semiconductor device with enhanced strain
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate. The semiconductor device includes a gate...
US-9,601,593 Semiconductor device structure and method for forming the same
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate. The semiconductor device structure includes...
US-9,601,592 IGBT and method of manufacturing the same
An IGBT has an emitter region, a top body region that is formed below the emitter region, a floating region that is formed below the top body region, a bottom...
US-9,601,591 Method for manufacturing semiconductor device
To provide a transistor in which a channel is formed in an oxide semiconductor and which has stable electrical characteristics. To suppress shift in threshold...
US-9,601,590 Dual work function buried gate-type transistor, method for forming the same, and electronic device including...
A transistor includes: a source region and a drain region that are formed in a substrate to be spaced apart from each other; a trench formed in the substrate...
US-9,601,589 Semiconductor device with surface insulating film
A semiconductor device of the present invention includes a semiconductor layer of a first conductivity type having a cell portion and an outer peripheral...
US-9,601,588 Method for fabricating semiconductor device
A method for fabricating a semiconductor device includes: forming isolation layers and active regions in a substrate, wherein each of the active regions is...
US-9,601,587 Semiconductor device having elevated structure
A semiconductor device includes a gate stack overlying a substrate. The semiconductor device further includes a spacer on sidewalls of the gate stack, where a...
US-9,601,586 Methods of forming semiconductor devices, including forming a metal layer on source/drain regions
Methods of forming a semiconductor device are provided. A method of forming a semiconductor device includes forming a metal layer on source/drain regions of...
US-9,601,585 Transistor having a wing region
A transistor includes an isolation region surrounding an active region. The transistor also includes a gate dielectric layer over a portion of the active...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.