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Patent # Description
US-9,601,584 Thin-film transistor substrate
An embodiment of the invention provides a thin-film transistor substrate, including: a substrate; a gate electrode disposed on the substrate; a gate insulating...
US-9,601,583 Hetero-integration of III-N material on silicon
A hetero-integrated device includes a monocrystalline Si substrate and a trench formed in the substrate to expose a crystal surface at a bottom of the trench....
US-9,601,582 Semiconductor device
A semiconductor device includes a semiconductor region made of a material to which conductive impurities are added, an insulating film formed on a surface of...
US-9,601,581 Semiconductor device and method for producing the same
A semiconductor device of an embodiment includes a p-type SiC layer; a SiC region provided on the p-type SiC layer and containing H (hydrogen) or D (deuterium)...
US-9,601,580 Semiconductor device
A semiconductor device includes a first transistor having a first conductivity type SiC layer, a second conductivity type SiC well region, a first conductivity...
US-9,601,579 Growth of semiconductors on hetero-substrates using graphene as an interfacial layer
Graphene is used as an interfacial layer to grow Si and other semiconductors or crystalline materials including two-dimensional Si and other structures on any...
US-9,601,578 Non-planar vertical dual source drift metal-oxide semiconductor (VDSMOS)
A non-planar lateral drift MOS device eliminates the need for a field plate extension, which reduces gate width. In one example, two sources and two...
US-9,601,577 Three-dimensionally integrated circuit devices including oxidation suppression layers
A vertically integrated circuit device can include a substrate having a first region reserved for first functional circuits of the vertically integrated circuit...
US-9,601,576 Nanowire FET with tensile channel stressor
Fin stacks including a silicon germanium alloy portion and a silicon portion are formed on a surface of a substrate. Sacrificial gate structures are then formed...
US-9,601,575 Semiconductor device having asymmetrical source/drain
A semiconductor device includes a substrate, an active fin protruding from the substrate, and an asymmetric diamond-shaped source/drain disposed on an upper...
US-9,601,574 V-shaped epitaxially formed semiconductor layer
The present disclosure provides a method in accordance with some embodiments. The method includes forming a recess in a source/drain region of a semiconductor...
US-9,601,573 Semiconductor device for reducing propagation time of gate input signals
A gate pad is disposed on a semiconductor layer composed of an n.sup.+ type substrate, an n.sup.- type epitaxial layer, and a p.sup.- type body layer. The gate...
US-9,601,572 Semiconductor device for reducing gate wiring length
A gate pad and a source pad are disposed on a semiconductor layer. The gate pad is disposed at the center portion of the semiconductor layer and has the shape...
US-9,601,571 Nanowire fabrication method and structure thereof
A method of providing an out-of-plane semiconductor structure and a structure fabricated thereby is disclosed. The method comprises acts of: providing a...
US-9,601,570 Structure for reduced source and drain contact to gate stack capacitance
A structure of a semiconductor device is described. A device structure including a gate structure, a source region and a drain region is disposed on a first...
US-9,601,569 Semiconductor device having a gate all around structure
A semiconductor includes a substrate including a first region and a second region, a fin extending in a first direction in the first region of the substrate,...
US-9,601,568 Semiconductor device including STI structure
Semiconductor devices including STI structures and their fabrication methods are provided. A mask layer is provided on a semiconductor substrate and patterned...
US-9,601,567 Multiple Fin FET structures having an insulating separation plug
A semiconductor device includes first and second FETs including first and second channel regions, respectively. The first and second FETs include first and...
US-9,601,566 Semiconductor device and method for manufacturing the same
A method for manufacturing a fin structure. The method includes: forming a first semiconductor layer and a second semiconductor layer sequentially on a...
US-9,601,565 Zig-zag trench structure to prevent aspect ratio trapping defect escape
A semiconductor structure including: trench-defining layer; an epitaxial layer; and a set of defect-blocking member(s). The trench-defining layer includes a...
US-9,601,564 Deep trench isolation
An integrated semiconductor device includes a substrate of a first conductivity type, a buried layer located over the substrate, an isolated region located over...
US-9,601,562 Oxide semiconductor film
A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer,...
US-9,601,561 Organic light emitting diode display device
An organic light emitting diode display device includes a semiconductor on a substrate with a driving channel, an auxiliary storage electrode on the substrate...
US-9,601,560 Light-emitting device and driving method
In a light emitting device, luminance irregularities caused by fluctuation in threshold of TFTs for supplying a current to EL elements among pixels hinder the...
US-9,601,559 Structure of an organic device, method and apparatus for patterning the same
Embodiments of the present invention provide an AMOLED device having a non-circular base substrate made of crystalline silicon and doped with an impurity, a...
US-9,601,558 OLED backplate structure
The present invention provides an OLED backplate structure. Multiple auxiliary conducting layers contacting the cathode are provided under the cathode of the...
US-9,601,557 Flexible display
A flexible display having an array of pixels or sub-pixels is provided. The display includes a flexible substrate and an array of thin film transistors (TFTs)...
US-9,601,556 Organic light emitting display device and method of manufacturing the same
An organic light emitting display device includes a driving thin film transistor (TFT), the driving thin film TFT includes a lower gate, a source, and a drain...
US-9,601,555 Organic light emitting device and method for manufacturing the same
Disclosed is an organic light emitting device (OLED) that may include a first electrode on a substrate, the first electrode having a pattern of a plurality of...
US-9,601,554 Transparent display device and method of manufacturing the same
A transparent display device includes a first substrate including a pixel region and a light amount controlling region. An organic light emitting display is...
US-9,601,553 Organic light-emitting display and method of manufacturing the same
An organic light-emitting display having an improved aperture ratio, the organic light-emitting display including a rear electrode, an opposite electrode, and a...
US-9,601,552 Organic light emitting display panel and method of manufacturing the same
An organic light emitting display panel and associated methods, the panel including a substrate; an organic light emitting diode (OLED) on the substrate; and an...
US-9,601,551 Organic light emitting display
An organic light emitting display includes a data driving unit connected to data lines, a scan driving unit connected to scan lines, and a display panel having...
US-9,601,550 Organic light emitting display device and method of manufacturing the same
An organic light emitting display device may include: a cell array comprising gate lines and data lines intersecting each other on a substrate so as to define a...
US-9,601,547 Solid-state image pickup device and electronic apparatus
A solid-state image pickup device includes at least two stacked first and second photoelectric conversion sections in each of a plurality of pixels. Sensitivity...
US-9,601,546 Scaled cross bar array with undercut electrode
A cross bar array device includes first electrodes arranged adjacent to each other and extending in a first direction, the first electrodes including a main...
US-9,601,545 Series MIM structures compatible with RRAM process
The present disclosure relates to a method of forming an integrated circuit that prevents damage to MIM decoupling capacitors, and an associated structure. In...
US-9,601,544 Three-dimensional magnetic memory element
The disclosed technology relates to a magnetic memory device. In one aspect, the device includes a first electrode comprising a conductive pillar formed over...
US-9,601,543 Optoelectronic device comprising light-emitting diodes with improved light extraction
An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or...
US-9,601,542 P-N junction optoelectronic device for ionizing dopants by field effect
An optoelectronic device comprising a mesa structure including: a first and a second semiconductor portions forming a p-n junction, a first electrode...
US-9,601,541 Method of manufacturing semiconductor device
An improvement is achieved in the performance of a semiconductor device. In a method of manufacturing the semiconductor device, in an n-type semiconductor...
US-9,601,540 Method for producing semiconductor device
A method for producing a semiconductor device includes preparing a wafer having plural portions and having an insulator having plural openings thereon, forming...
US-9,601,539 Solid-state imaging device, method of manufacturing the same, and electronic equipment
A solid state imaging device including a semiconductor layer comprising a plurality of photodiodes, a first antireflection film located over a first surface of...
US-9,601,538 Image sensors with photoelectric films
An image sensor with an organic photoelectric film for converting light into charge may be provided. The image sensor may include an array of image sensor...
US-9,601,537 Image pickup device that is provided with peripheral circuits to prevent chip area from being increased, and...
An image pickup device which suppresses an increase in chip area of peripheral circuits without degrading the performance of a pixel section and makes it...
US-9,601,536 Solid-state image capturing apparatus and camera
A solid-state image capturing apparatus, comprising a plurality of photoelectric conversion portions disposed in a first semiconductor region of a first...
US-9,601,535 Semiconducator image sensor having color filters formed over a high-K dielectric grid
The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a...
US-9,601,534 Solid state image sensor, method of manufacturing solid state image sensor, and image capturing system
The present invention provides a solid state image sensor including a pixel array having a plurality of pixels arranged therein, each of the plurality of pixels...
US-9,601,533 Solid-state imaging apparatus, method of manufacturing the same, and camera
A method of manufacturing a solid-state imaging apparatus, comprising preparing a semiconductor substrate including a photoelectric conversion portion and a...
US-9,601,532 Optical filter with Fabry-Perot resonator comprising a plate-shaped wire grid polarizer
The present disclosure is an optical filter which includes: a Fabry-Perot resonator equipped with a laminated structure including one sheet of first metal...
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