Easy To Use Patents Search & Patent Lawyer Directory

At Patents you can conduct a Patent Search, File a Patent Application, find a Patent Attorney, or search available technology through our Patent Exchange. Patents are available using simple keyword or date criteria. If you are looking to hire a patent attorney, you've come to the right place. Protect your idea and hire a patent lawyer.

Searching:





Search by keyword, patent number, inventor, assignee, city or state:




Patent # Description
US-9,601,228 Silicon oxide based high capacity anode materials for lithium ion batteries
Silicon oxide based materials, including composites with various electrical conductive compositions, are formulated into desirable anodes. The anodes can be...
US-9,601,227 Microbial nanowires and methods of making and using
Electrically conductive nanowires, and genetically or chemically modified production and use of such nanowires with altered conductive, adhesive, coupling or...
US-9,601,226 High-density 3D graphene-based monolith and related materials, methods, and devices
A composition comprising at least one high-density graphene-based monolith, said monolith comprising a three-dimensional structure of graphene sheets...
US-9,601,225 Multiple-cavity vapor cell structure for micro-fabricated atomic clocks, magnetometers, and other devices
An apparatus includes a vapor cell having multiple cavities fluidly connected by one or more channels. At least one of the cavities is configured to receive a...
US-9,601,224 Electron beam irradiation apparatus
An electron beam irradiation apparatus that emits an electron beam into a container, the electron beam irradiation apparatus including: a vacuum housing...
US-9,601,223 Anti-scatter grid or collimator
Anti-scatter plates are used to attenuate secondary radiation so that it is not detected by a detector array. However, anti-scatter plates often cast dynamic...
US-9,601,222 Emergency fluid source for harsh environments
The present invention takes the form of an apparatus or system that provides an alternate source of the pneumatic fluid to a system inside containment of a...
US-9,601,221 Opening and closing device for access port that opens to working platform of reactor vessel
An opening and closing device that opens and closes an access port opened from a substantially cylindrical working platform disposed inside a reactor vessel and...
US-9,601,220 Earthquake-resistant reinforcement assembly
An earthquake-resistant reinforcement assembly according to one embodiment of the present invention comprises: a rod of which one end is hinge-coupled to an...
US-9,601,219 Method, memory controller, and memory system for reading data stored in flash memory
An exemplary method for reading data stored in a flash memory includes: selecting an initial gate voltage combination from a plurality of predetermined gate...
US-9,601,218 Memory device and computing system including the same
A memory system includes a read-only memory (ROM), a main memory and a processor. The ROM stores a basic input/output system (BIOS). The main memory includes a...
US-9,601,217 Methods and circuitry for identifying logic regions affected by soft errors
Integrated circuits with single event upset (SEU) detection circuitry are provided. The SEU detection circuitry may include an error detection block for...
US-9,601,216 Semiconductor device including redundancy cell array
Provided is a semiconductor device and a manufacturing method thereof. The semiconductor device may include a first cell array, a first fuse circuit, a first...
US-9,601,215 Holding circuit, driving method of the holding circuit, and semiconductor device including the holding circuit
A holding circuit includes first to third input terminals, an output terminal, first to third switches, a capacitor, and a node. The first to third switches...
US-9,601,214 Method and system for improving the radiation tolerance of floating gate memories
A method of improving radiation tolerance of floating gate memories is provided herein. Floating gate memories can include a floating gate transistor or a block...
US-9,601,212 Storage device and information processing method
A storage device and an information processing method are provided. The storage device has a first power supply unit and at least one first storage cell. The at...
US-9,601,211 Semiconductor memory device
A semiconductor memory device may include a memory cell array, two or more global word lines, and two or more path circuits. The two or more global word lines...
US-9,601,210 Semiconductor memory device and memory system
A semiconductor memory device includes a first stack of memory cells above a substrate, the first stack including a first memory cell and a second memory cell...
US-9,601,209 Voltage generator and semiconductor memory device
A voltage generator includes a first trim unit and a second trim unit. The first trim unit generates a first voltage variable depending on temperature variation...
US-9,601,208 Nonvolatile memory device and driving method thereof
According to example embodiments, a nonvolatile memory device includes a plurality of strings having a plurality of serially-connected selection transistors and...
US-9,601,207 Semiconductor memory device and method of operating the same
A semiconductor memory device is operated by, inter alia, performing least significant bit programs for pages in a first page group, performing least...
US-9,601,206 Semiconductor memory system including a plurality of semiconductor memory devices
A communication line is connected to first and second chips, and held at a first signal level. A monitor circuit changes a signal level of the communication...
US-9,601,205 Storage device and method of writing and reading the same
A write method of a storage device including at least one nonvolatile memory device and a memory controller controlling the nonvolatile memory device includes...
US-9,601,204 Three-dimensional semiconductor devices and fabricating methods thereof
A three-dimensional (3D) semiconductor memory device includes a CMOS circuit structure including a plurality of column blocks each comprising a plurality of...
US-9,601,203 Floating gate non-volatile memory bit cell
A solid-state non-volatile memory (NVM) device includes a memory bit cell. The memory bit cell includes a field effect transistor (FET) fabricated on a...
US-9,601,202 Low voltage difference operated EEPROM and operating method thereof
The present invention discloses a low voltage difference-operated EEPROM and an operating method thereof, wherein at least one transistor structure is formed in...
US-9,601,201 Irreproducible and re-emergent unique structure or pattern identifier manufacturing and detection method,...
An irreproducible and re-emergent unique structure or pattern identifier manufacturing and detection method, system, and apparatus are provided. A non-volatile...
US-9,601,200 TCAM structures with reduced power supply noise
A ternary content addressable memory (TCAM) structure may activate individual groups of subarrays in the TCAM structure, during a non-search mode, at...
US-9,601,199 Iterator register for structured memory
Loading data from a computer memory system is disclosed. A memory system is provided, wherein some or all data stored in the memory system is organized as one...
US-9,601,198 Memory circuit provided with bistable circuit and non-volatile element
A memory circuit includes: a bistable circuit (30) that stores data; nonvolatile elements (MTJ1, MTJ2) that store data written in the bistable circuit in a...
US-9,601,197 Memory system and control method
According to one embodiment, there is provided a memory system including a volatile memory and a controller. The volatile memory has 1.sup.st to K.sup.th memory...
US-9,601,196 Resistive change memory including current limitation circuit
A semiconductor integrated circuit includes: first and second wiring lines; resistive change memories disposed intersection regions of the first and second...
US-9,601,195 Voltage control for crosspoint memory structures
The present disclosure provides a memory cell that includes a resistive memory element disposed between a first conductor and a second conductor, the first...
US-9,601,194 NAND array comprising parallel transistor and two-terminal switching device
Providing for a high performance and efficiency NAND architecture is described herein. By way of example, a NAND array is disclosed comprising memory cells...
US-9,601,193 Cross point memory control
The present disclosure relates to phase change memory control. An apparatus includes a memory controller. The memory controller includes a word line (WL)...
US-9,601,192 Resistance-change memory having on-state, off-state, and intermediate state
According to one embodiment, a resistance-change memory includes a memory cell and a control circuit. The memory cell comprises first and second electrodes, and...
US-9,601,191 Exploiting phase-change memory write asymmetries to accelerate write
To improve the write performance of PCM, the disclosed technology, in certain embodiments, provides a new write scheme, referred to herein as two-stage-write,...
US-9,601,190 Semiconductor integrated circuit
A semiconductor integrated circuit according to an embodiment includes: N (.gtoreq.1) input wiring lines; M (.gtoreq.1) output wiring lines; N first wiring...
US-9,601,189 Representing data using a group of multilevel memory cells
A memory device includes a group or block of k-level memory cells, where k>2, and where each of the k-level memory cells has k programmable states...
US-9,601,188 Method, apparatus and system for targeted healing of stability failures through bias temperature instability
We disclose methods, apparatus, and systems for improving semiconductor device yield and/or reliability through bias temperature instability (BTI). One device...
US-9,601,187 Method, apparatus, and system for global healing of stability-limited die through bias temperature instability
We disclose methods, apparatus, and systems for improving semiconductor device yield and/or reliability through bias temperature instability (BTI). One device...
US-9,601,186 Bit line precharging circuit, static RAM, electronic device, and static ram bit line precharging method
A bit line precharging circuit includes a first switch that connects a bit line to a first power source, a second switch that connects the bit line to a second...
US-9,601,185 Integrated CMOS circuit having first and second circuit parts
An integrated circuit includes first and second circuit parts that may be arranged close to one another in a single semiconducting substrate. The circuit may...
US-9,601,184 Semiconductor memory and method for operating the same
A semiconductor memory may include: a storage unit suitable for storing a minimum operation interval between row command operations, a detection unit suitable...
US-9,601,183 Apparatuses and methods for controlling wordlines and sense amplifiers
Apparatuses and methods for controlling word lines and sense amplifiers in a semiconductor device are described. An example apparatus includes: a sub word line...
US-9,601,182 Frequency synthesis for memory input-output operations
A memory channel including an internal clock circuit is disclosed. The clock circuit may synthesize an internal clock signal for use by one or more components...
US-9,601,181 Controlled multi-step de-alignment of clocks
An apparatus for data processing includes first and second functional units driven by corresponding first and second clock-signal sources, and a...
US-9,601,180 Automatic partial array self-refresh
Methods of configuring dynamic memory associated with a processing system, are described. The dynamic memory is configured in a plurality of blocks, the method...
US-9,601,179 Semiconductor memory device, method of performing a refresh for semiconductor memory device and refresh counter...
A semiconductor memory device may include a memory cell array, a first decoder and a second decoder. The memory cell array includes a plurality of memory cell...
US-9,601,178 Memory device and semiconductor device
To provide a memory device which operates at high speed or a memory device in which the frequency of refresh operations is reduced. In a cell array, a potential...
← Previous | 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 | Next →

File A Patent Application

  • Protect your idea -- Don't let someone else file first. Learn more.

  • 3 Easy Steps -- Complete Form, application Review, and File. See our process.

  • Attorney Review -- Have your application reviewed by a Patent Attorney. See what's included.