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Patent # Description
US-9,608,028 Image sensor and method for manufacturing same
Disclosed is an image sensor, which is characterized by increased strength of adhesion between a photoconductive layer and a front electrode made of aluminum,...
US-9,608,027 Stacked embedded SPAD image sensor for attached 3D information
A pixel array includes a plurality of visible light pixels arranged in the pixel array. Each one of the plurality of visible light pixels includes a...
US-9,608,026 Through via structure, methods of forming the same
Methods of manufacturing an integrated circuit device including a through via structure are provided. The methods may include forming an isolation trench...
US-9,608,025 Imaging apparatus and imaging system
Provided is an imaging apparatus includes: a substrate; a photoelectric conversion unit configured to generate a signal charge by photoelectric conversion; a...
US-9,608,024 CMOS image sensor for reducing dead zone
An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor...
US-9,608,023 Edge reflection reduction
An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor...
US-9,608,022 Color filter array and image receiving method thereof
A color filter array, for an image sensing device, includes a plurality of filter patterns. Each filter pattern includes at least one first filter,...
US-9,608,021 Image sensor and method for manufacturing thereof
An image sensor is provided including a substrate, an array of photosensitive units, a grid, a light-tight layer and a plurality of color filters. In the image...
US-9,608,020 Imaging element mounting substrate and imaging device
An imaging element mounting substrate includes: an insulating base comprising insulating layers, the insulating base surface comprising an opening which is...
US-9,608,019 Image sensor pixel for high dynamic range image sensor
An image sensor pixel for use in a high dynamic range image sensor includes a first photodiode and a second photodiode. The first photodiode include a first...
US-9,608,018 Liquid crystal display device and method of manufacturing the same
Disclosed are an LCD device and a method of manufacturing the same, which reduce a capacitance deviation between pixels without any change in a viewing angle...
US-9,608,017 Reversed flexible TFT back-panel by glass substrate removal
The process of fabricating a flexible TFT back-panel includes depositing etch stop material on a glass support. A matrix of contact pads, gate electrodes and...
US-9,608,016 Method of separating a wafer of semiconductor devices
A method according to embodiments of the invention includes providing a wafer comprising a semiconductor structure grown on a growth substrate. The...
US-9,608,015 Thin film transistor array panel and manufacturing method thereof
Exemplary embodiments of the present disclosure provide a thin film transistor array panel including a first insulating substrate; a gate line and a data line...
US-9,608,014 Display device
A display device includes a first substrate, a second substrate disposed opposite to the first substrate, and a gate drive circuit having at least one first...
US-9,608,013 Array substrate, liquid crystal panel, and manufacturing method of array substrate
The present disclosure provides an array substrate, a liquid crystal panel, and a manufacturing method of the array substrate. In the present disclosure, the...
US-9,608,012 Display panel
A display panel is disclosed, comprising: a first substrate; a thin film transistor layer disposed on the first substrate; an insulating layer disposed on the...
US-9,608,011 Thin-film transistor and fabricating method thereof, array substrate and display apparatus
The present invention discloses a thin-film transistor and a fabricating method thereof, an array substrate and a display apparatus. An active layer in the...
US-9,608,010 Semiconductor device
A semiconductor device which shifts a low-level signal is provided. In an example, a first transistor including a first terminal electrically connected to a...
US-9,608,009 Display device and method of fabricating the same
A disclosed display device includes a first oxide semiconductor layer and an oxide semiconductor connection wire both formed from an oxide semiconductor...
US-9,608,008 Active matrix substrate and method for producing same
Each pixel region of an active matrix substrate includes a thin-film transistor, an interlayer insulating layer that includes an organic insulating layer, a...
US-9,608,007 Display device
An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide...
US-9,608,006 Semiconductor device and touch panel
A touch panel whose power consumption can be reduced is provided, and an increase in the manufacturing cost of the touch panel is prevented. A photosensor which...
US-9,608,005 Memory circuit including oxide semiconductor devices
To provide a semiconductor device with excellent charge retention characteristics, an OS transistor is used as a transistor whose gate is connected to a node...
US-9,608,004 Semiconductor device and peeling off method and method of manufacturing semiconductor device
The present invention provides a peeling off method without giving damage to the peeled off layer, and aims at being capable of peeling off not only a peeled...
US-9,608,003 Integrated circuit product with bulk and SOI semiconductor devices
An integrated circuit product is disclosed including an SOI structure including a bulk semiconductor substrate, a buried insulation layer positioned on the bulk...
US-9,608,002 Semiconductor memory device and method for manufacturing same
According to one embodiment, the stacked body includes a plurality of stacked units and a first intermediate layer. Each of the stacked units includes a...
US-9,608,001 Semiconductor memory device
According to one embodiment, a semiconductor memory device includes a substrate; a first stacked body provided on the substrate, the first stacked body...
US-9,608,000 Devices and methods including an etch stop protection material
Protective dielectrics are discussed generally herein. In one or more embodiments, a three-dimensional vertical memory may include a protective dielectric...
US-9,607,999 System and method of UV programming of non-volatile semiconductor memory
A method of forming a semiconductor memory storage device that includes forming first and second doped regions of a first type in a semiconductor substrate and...
US-9,607,998 Semiconductor storage device and method for manufacturing the semiconductor storage device
A semiconductor storage device includes an insulating layer. A ferroelectric capacitor is on the insulating layer and includes a lower electrode, a...
US-9,607,997 Metal line with increased inter-metal breakdown voltage
A wide trench having a width W1 and narrow trenches having a width W2 that is less than W1 are formed in a dielectric layer, the wide trench extending deeper in...
US-9,607,996 Semiconductor device
A semiconductor device includes a memory transistor (10A) which is capable of being irreversibly changed from a semiconductor state where drain current Ids...
US-9,607,995 Semiconductor structure and fabrication method thereof, and static random access memory cell
A method for forming a semiconductor having a plurality of FinFETs. The method includes providing a semiconductor substrate having a surface; and forming a...
US-9,607,994 Methods of fabricating semiconductor devices
Provided are semiconductor devices and methods of fabricating the same. In methods of forming the same, an etch stop pattern and a separate spacer can be formed...
US-9,607,993 Capacitor-transistor strap connections for a memory cell
Capacitor strap connections for a memory cell and device structures for making such capacitor strap connections. A deep trench capacitor is formed in a...
US-9,607,992 Etchstop layers and capacitors
Capacitor structures for integrated circuit devices are provided. Capacitors include proximate dense or highly dense etchstop layers. The dense or highly dense...
US-9,607,991 Semiconductor device
To provide a semiconductor memory device which can be manufactured with high yield and which can achieve higher integration. A pair of memory cells adjacent to...
US-9,607,990 Method to form strained nFET and strained pFET nanowires on a same substrate
A semiconductor is provided that includes an nFET gate structure straddling over a first nanowire stack and a portion of a first SiGe layer having a first Ge...
US-9,607,989 Forming self-aligned NiSi placement with improved performance and yield
Methods for forming a trench silicide without gouging the silicon source/drain regions and the resulting devices are disclosed. Embodiments include forming...
US-9,607,988 Off-center gate cut
A semiconductor device includes a diffusion area, a gate structure coupled to the diffusion area, and a dummy gate structure coupled to the diffusion area. The...
US-9,607,987 Methods for forming fins for metal oxide semiconductor device structures
Methods are disclosed for forming fins in transistors. In one embodiment, a method of fabricating a device includes forming silicon fins on a substrate and...
US-9,607,986 Mixed orientation semiconductor device and method
A method of making a semiconductor device begins with a semiconductor wafer that includes a first semiconductor layer overlying a second semiconductor layer. A...
US-9,607,985 Semiconductor device and method of fabricating the same
A semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, a plurality of fin shaped structures, a first trench...
US-9,607,984 Common drain semiconductor device structure and method
In one embodiment, a common drain semiconductor device includes a substrate, having two transistors integrated therein. The substrate also includes a plurality...
US-9,607,983 Semiconductor device
A semiconductor device is formed, the semiconductor device including: an SOI substrate; field insulating films that are formed on the SOI substrate and that...
US-9,607,982 Semiconductor device and method for fabricating the same
A method for fabricating semiconductor device is disclosed. First, a substrate is provided, a bipolar junction transistor (BJT) is formed on the substrate, a...
US-9,607,981 Semiconductor device and driver circuit with source and isolation structure interconnected through a diode...
Embodiments include methods of forming a semiconductor device having a first conductivity type, an isolation structure (including a sinker region and a buried...
US-9,607,980 High voltage transistor
The present invention provides a high voltage transistor including a substrate, a first base region having a first conductivity type, and a first doped region,...
US-9,607,979 Liquid crystal display device and manufacturing method thereof
Provided is a liquid crystal display device according to an embodiment of the present disclosure. The display device includes: a first metal layer, a first...
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