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Patent # Description
US-9,614,132 Light emitting device and method of fabricating the same
A light emitting device package includes substrate; first and second conduction members on the substrate; a light emitting diode on the substrate, the light...
US-9,614,131 Optoelectronic semiconductor component and method for producing an optoelectronic semiconductor component
An optoelectronic semiconductor component has a carrier and at least one semiconductor chip for emitting electromagnetic radiation. The semiconductor chip has...
US-9,614,130 Light emitting device and illumination device
A light emitting device which emits a secondary light with high color purity and has a fast response speed is obtained. A KSF phosphor (15) which absorbs a part...
US-9,614,129 Light emitting device having surface-modified luminophores
A light-emitting device including a light-emitting diode and a surface-modified luminophore. The surface-modified luminophore includes a luminophore including a...
US-9,614,128 Surface mountable semiconductor device
The present invention relates to a surface mountable semiconductor device comprising at least one semiconductor element mounted on or integrated in a device...
US-9,614,127 Light-emitting device and method of manufacturing thereof
The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor...
US-9,614,126 Light emitting device
A light emitting device includes a light emitting element, a p-side and an n-side post electrode. The light emitting element includes a semiconductor body...
US-9,614,125 Composite element chip, a semiconductor device and manufacturing method thereof, a printing head, and an image...
A composite element chip includes a substrate; and a plurality of semiconductor thin-films disposed on the substrate and arranged in a predetermined direction...
US-9,614,124 Substrate having annealed aluminum nitride layer formed thereon and method for manufacturing the same
A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and...
US-9,614,123 Deep ultraviolet LED and method for manufacturing the same
A deep ultraviolet LED with a design wavelength of .lamda. is provided that includes a reflecting electrode layer, a metal layer, a p-type GaN contact layer,...
US-9,614,122 Optical tuning of light emitting semiconductor junctions
Light emitting semiconductor junctions are disclosed. An exemplary light emitting junction has a first electrical contact coupled to a first side of the...
US-9,614,121 Method of fabricating semiconductor light emitting device
A method of fabricating a semiconductor light-emitting device is provided that includes forming a first conductivity-type semiconductor layer, forming an active...
US-9,614,119 Avalanche photodiode with low breakdown voltage
An Si/Ge SACM avalanche photo-diodes (APD) having low breakdown voltage characteristics includes an absorption region and a multiplication region having various...
US-9,614,118 Method and apparatus for depositing copper-indium-gallium selenide (CuInGaSe2-cigs) thin films and other...
An apparatus for deposition of a plurality of elements onto a solar cell substrate that comprises: a housing; a transporting apparatus to transport the...
US-9,614,117 Solar cell manufacturing method
The present invention relates to a method for manufacturing a solar cell having excellent long-term reliability and high efficiency, said method including: a...
US-9,614,116 Impedance adaptation in a THz detector
At least one electronic device, system and method of manufacturing an electromagnetic wave detector are provided herein. The electronic device for receiving at...
US-9,614,115 Semiconductor device and method for manufacturing the same
Provided is a semiconductor device that can suppress a leakage current more than has been achieved before. A semiconductor device 22 includes a first carrier...
US-9,614,113 Edge protected barrier assemblies
The present application is directed to an assembly comprising an electronic device, and a multilayer film. The multilayer film comprises a barrier stack...
US-9,614,112 Imaging cell array integrated circuit
A semiconductor device is provided that includes an array of imaging cells realized from a plurality of layers formed on a substrate, wherein the plurality of...
US-9,614,111 CIGS film, and CIGS solar cell employing the same
The present invention provides a CIGS film substantially free from oxidation of a front surface thereof and a CIGS solar cell employing the CIGS film and...
US-9,614,110 Photo detector
Disclosed is a photo detector. The photo detector includes: a conductive substrate; an insulating layer formed on the conductive substrate; a single-layer...
US-9,614,109 Photodiode and photodiode array
A p.sup.- type semiconductor substrate 20 has a first principal surface 20a and a second principal surface 20b opposed to each other and includes a...
US-9,614,108 Optically-thin chalcogenide solar cells
A photovoltaic device comprises a back reflective coating structure to provide back scattering of light that passes through the photovoltaic device, an absorber...
US-9,614,107 Quantum capacitance graphene varactors and fabrication methods
A plate varactor includes a dielectric substrate and a first electrode embedded in a surface of the substrate. A capacitor dielectric layer is disposed over the...
US-9,614,106 Semiconductor device
In an IGBT portion, a first gate electrode is provided in a first trench via a first gate insulating film. A thickness of a first gate insulating film lower...
US-9,614,105 Charge-trap NOR with silicon-rich nitride as a charge trap layer
A charge-trapping NOR (CT-NOR) memory device and methods of fabricating a CT-NOR memory device utilizing silicon-rich nitride (SiRN) in a charge-trapping (CT)...
US-9,614,104 Co-planar oxide semiconductor TFT substrate structure and manufacture method thereof
The present invention provides a co-planar oxide semiconductor TFT substrate structure and a manufacture method thereof. In the co-planar oxide semiconductor...
US-9,614,103 Semiconductor device and method for manufacturing the same
A semiconductor device according to an embodiment includes a first region including an oxide semiconductor containing indium (In), gallium (Ga), and zinc (Zn),...
US-9,614,102 Self-aligned metal oxide TFT with reduced number of masks and with reduced power consumption
A method of fabricating MO TFTs includes positioning opaque gate metal on a transparent substrate to define a gate area. Depositing gate dielectric material...
US-9,614,101 Array substrate and method for manufacturing the same
Disclosed herein is a method for manufacturing an array substrate. The method includes forming a source electrode and a drain electrode on a substrate. A...
US-9,614,100 Semiconductor device
The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate...
US-9,614,099 Semiconductor device and imaging device
According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion...
US-9,614,098 Thin film transistor and manufacturing method thereof, array substrate and display device
A thin film transistor and a manufacturing method thereof, an array substrate and a display device are provided. The method includes forming a gate electrode, a...
US-9,614,097 Semiconductor device
It is an object to provide a semiconductor device in which power consumption can be reduced. It is another object to provide a highly reliable semiconductor...
US-9,614,096 Liquid crystal display device
To provide a liquid crystal display device suitable for a thin film transistor which uses an oxide semiconductor. In a liquid crystal display device which...
US-9,614,095 Semiconductor device
An oxide semiconductor transistor comprising an oxide semiconductor layer with high conductivity is provided. A semiconductor device including an oxide...
US-9,614,094 Semiconductor device including oxide semiconductor layer and method for driving the same
An object is to suppress operation delay caused when a semiconductor device that amplifies and outputs an error between two potentials returns from a standby...
US-9,614,093 Strain compensation in transistors
Transistor structures having channel regions comprising alternating layers of compressively and tensilely strained epitaxial materials are provided. The...
US-9,614,092 Thin film transistor array panel and method of manufacturing the same
A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulating substrate; a polycrystal semiconductor...
US-9,614,091 Gate structure and method for fabricating the same
An apparatus comprises a nanowire having a channel region, a gate structure surrounding a lower portion of the channel region, wherein the gate structure...
US-9,614,090 Semiconductor device and method of manufacturing the semiconductor device
A semiconductor device includes at least one first gate structure and at least one second gate structure on a semiconductor substrate. The at least one first...
US-9,614,089 Structure and formation method of semiconductor device structure
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate stack over a semiconductor...
US-9,614,088 Metal gate structure and manufacturing method thereof
A semiconductor structure includes a substrate including a first active region, a second active region and an isolation disposed between the first active region...
US-9,614,087 Strained vertical field-effect transistor (FET) and method of forming the same
A method for manufacturing a semiconductor device includes forming a first semiconductor layer on a substrate, forming a bottom source/drain region on the first...
US-9,614,086 Conformal source and drain contacts for multi-gate field effect transistors
A semiconductor device includes a fin having a first semiconductor material. The fin includes a source/drain (S/D) region and a channel region. The S/D region...
US-9,614,085 Semiconductor structure having enlarged regrowth regions and manufacturing method of the same
The present disclosure provides a semiconductor structure, including: an insulation region including a top surface; a semiconductor fin protruding from the top...
US-9,614,084 Semiconductor device and method for fabricating the same
A semiconductor device includes a substrate comprising a channel region and a recess, wherein the recess is located at both side of the channel region; a gate...
US-9,614,083 Field effect transistor with narrow bandgap source and drain regions and method of fabrication
A transistor having a narrow bandgap semiconductor source/drain region is described. The transistor includes a gate electrode formed on a gate dielectric layer...
US-9,614,082 Al-poor barrier for InGaAs semiconductor structure
The present disclosure relates to a semiconductor structure and a method of preparation including a silicon monocrystalline substrate, and a III-V structure...
US-9,614,081 Semiconductor device including gate electrode for applying tensile stress to silicon substrate, and method of...
A gate insulating film and a gate electrode of non-single crystalline silicon for forming an nMOS transistor are provided on a silicon substrate. Using the gate...
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