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Patent # Description
US-9,613,827 SGT-including semiconductor device and method for manufacturing the same
A method for manufacturing a semiconductor device includes forming an SGT in a semiconductor pillar on a semiconductor substrate and forming a wiring...
US-9,613,826 Semiconductor process for treating metal gate
A semiconductor process for treating a metal gate includes the following steps. A metal gate including a main conductive material on a substrate is provided. A...
US-9,613,825 Photoresist strip processes for improved device integrity
Provided herein are methods and apparatus of hydrogen-based photoresist strip operations that reduce dislocations in a silicon wafer or other substrate....
US-9,613,824 Etching method
The etching method of one embodiment includes a first step of generating a plasma of a first processing gas containing a fluorocarbon gas and a ...
US-9,613,823 Etching method and storage medium
An etching method includes disposing a target substrate within a chamber. The target substrate has a first silicon oxide film formed on a surface of the target...
US-9,613,822 Oxide etch selectivity enhancement
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch using plasma effluents formed in a...
US-9,613,821 Method of forming patterns and method of manufacturing integrated circuit device
Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern...
US-9,613,820 Method of forming patterns
A method of forming patterns includes the steps of providing a substrate having a target layer thereon; forming a plurality of first resist patterns on the...
US-9,613,819 Process chamber, method of preparing a process chamber, and method of operating a process chamber
Process chambers and methods of preparing and operating a process chamber are disclosed. In some embodiments, a method of preparing a process chamber for...
US-9,613,818 Deposition of low fluorine tungsten by sequential CVD process
Provided herein are methods of depositing bulk tungsten by sequential CVD pulses, such as by alternately pulsing tungsten hexafluoride and hydrogen gas in...
US-9,613,817 Method of enhancing surface doping concentration of source/drain regions
A method of enhancing surface diffusion species concentration in source/drain regions includes providing a substrate for an integrated circuit. One of an n-type...
US-9,613,816 Advanced process control method for controlling width of spacer and dummy sidewall in semiconductor device
An advanced process control (APC) method for controlling a width of a spacer in a semiconductor device includes: providing a semiconductor substrate; providing...
US-9,613,815 High-efficiency line-forming optical systems and methods for defect annealing and dopant activation
High-efficiency line-forming optical systems and methods for defect annealing and dopant activation are disclosed. The system includes a CO.sub.2-based...
US-9,613,814 Metal adhesion
A solar cell has a metal contact formed to electrically contact a surface of semiconductor material forming a photovoltaic junction. The solar cell includes a...
US-9,613,813 Method for improving critical dimension variability by implanting argon or silicon ions into a patterned mask
Methods of processing a workpiece are disclosed. Variability of the critical dimension of semiconductor structures may be affected by the critical dimension of...
US-9,613,812 Method for processing a carrier, a carrier, an electronic device and a lithographic mask
Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the...
US-9,613,811 Methods of manufacturing semiconductor devices
A first protective layer, a mask layer, a second protective layer and a photoresist layer are sequentially formed on a substrate. A photoresist pattern is...
US-9,613,810 Silicon carbide semiconductor devices having nitrogen-doped interface
Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon...
US-9,613,809 Method of manufacturing silicon carbide semiconductor device
A method of manufacturing a silicon carbide semiconductor device includes the following steps. A silicon carbide substrate is prepared. A first mask layer is...
US-9,613,808 Method of forming multilayer hard mask with treatment for removing impurities and forming dangling bonds
A method of forming a multilayer hard mask includes the following steps. An unpatterned multilayer hard mask is formed on a semiconductor substrate. The...
US-9,613,807 Methods for fabricating integrated circuits using directed self-assembly chemoepitaxy
Methods for directed self-assembly (DSA) using chemoepitaxy in the design and fabrication of integrated circuits are disclosed herein. An exemplary method...
US-9,613,806 Triple patterning NAND flash memory
A NAND flash memory array is initially patterned by forming a plurality of sidewall spacers according along sides of patterned portions of material. The pattern...
US-9,613,805 Method for forming a semiconductor device
A method for forming a semiconductor device comprises forming an amorphous or polycrystalline semiconductor layer adjacently to at least one semiconductor...
US-9,613,804 Method of manufacturing semiconductor devices which allows reproducible thinning of a semiconductor body of the...
One embodiment describes a method of manufacturing a semiconductor device. Here, impurities are implanted into a semiconductor body via a first side of the...
US-9,613,803 Low defect relaxed SiGe/strained Si structures on implant anneal buffer/strain relaxed buffer layers with...
A method provides a substrate having a top surface; forming a first semiconductor layer on the top surface, the first semiconductor layer having a first unit...
US-9,613,802 Method for making epitaxial structure
A method for making an epitaxial structure includes the following steps. A substrate having an epitaxial growth surface is provided. A buffer layer is formed on...
US-9,613,801 Integration of absorption based heating bake methods into a photolithography track system
A method of patterning a layered substrate is provided that includes forming a layer of a block copolymer on a substrate, annealing the layer of the block...
US-9,613,800 Methods of manufacturing semiconductor devices including an oxide layer
In a method of forming an oxide layer of a semiconductor process, a preliminary precursor flow is provided on a substrate in a deposition chamber to form a...
US-9,613,799 Methods for depositing films with organoaminodisilane precursors
Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is provided a precursor of Formula I: ##STR00001## ...
US-9,613,798 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A technique includes forming a film containing a first element, a second element and carbon on a substrate by performing a cycle a predetermined number of...
US-9,613,797 Cleaning device, peeling system, cleaning method and computer-readable storage medium
A cleaning method that peels off an overlapped substrate and cleans a bonding surface of a peeled substrate to be processed, the overlapped substrate including...
US-9,613,796 Method of flattening a wafer
The wafer bevel etching apparatus of the present invention includes a wafer-protecting mask to cover parts of a wafer. A central region and a wafer bevel region...
US-9,613,795 Wafer processing method to remove crystal strains
A wafer is formed by slicing a single crystal ingot and removing crystal strains remaining in a peripheral portion of the wafer. In the crystal strain removing...
US-9,613,794 Extending light bulb replacing tool
An apparatus for changing a light bulb that is out of reach for a person even with the use of a six foot ladder includes a substantially hollow elongated member...
US-9,613,793 Automotive front lighting lamp with baffle
A lamp for automotive vehicle front lighting is described. The lamp 10 comprises a base 12 for mechanical and electrical connection to an automotive headlight...
US-9,613,792 Multi-spectral electrodeless ultraviolet light source, lamp module, and lamp system
An elongated light source envelope is disclosed. The elongated light source comprises an inner wall and an outer wall formed around a longitudinal axis. The...
US-9,613,791 Calcium fluoride optical member, manufacturing method therefor, gas-holding container, and light source device
There is provided a calcium fluoride optical member formed from monocrystalline calcium fluoride and having a tubular shape. A {110} crystal plane or a {111}...
US-9,613,790 Electron spectrometer and measurement method
An electron spectrometer includes: an energy analyzer section that energy-analyzes electrons emitted from a specimen; a micro-channel plate that amplifies the...
US-9,613,789 Compact dual ion composition instrument
A relatively compact dual ion composition instrument and associated methodology for measuring plasma and ion populations in a variety of interplanetary and...
US-9,613,788 RF ion guide with axial fields
RF ion guides are configured as an array of elongate electrodes arranged symmetrically about a central axis, to which RF voltages are applied. The RF electrodes...
US-9,613,787 Time-of-flight mass spectrometer for conducting high resolution mass analysis
A first mass analysis is executed in a condition that gas is not introduced into a loop-flight chamber (4), and a time-of-flight spectrum obtained in a data...
US-9,613,786 Peak detection method for mass spectrometry and system therefor
To enable more reliable detection of ion peaks from mass spectral data. Ion peaks are detected from mass spectrum by the following steps. A step of acquiring...
US-9,613,785 Method of mass spectrometry and a mass spectrometer
The present invention relates to a method of mass spectrometry, an apparatus adapted to perform the method and a mass spectrometer. More particularly, but not...
US-9,613,784 Sputtering system and method including an arc detection
A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power...
US-9,613,783 Method and apparatus for controlling a magnetic field in a plasma chamber
Methods and apparatus for controlling a magnetic field in a plasma chamber are provided herein. In some embodiments, a process chamber liner may include a...
US-9,613,782 Method for determining a beamlet position and method for determining a distance between two beamlets in a...
The invention relates to a method for determining a beamlet position in a charged particle multi-beamlet exposure apparatus. The apparatus is provided with a...
US-9,613,781 Scanning electron microscope
An embodiment of the invention relates to a SEM enabling a surface analysis of a sample at a high throughput. The SEM has an electron gun, an irradiation unit,...
US-9,613,780 Method of fabricating sample support membrane
A method of fabricating a sample support membrane used to support an electron microscope sample starts with forming a first layer on a first layer of a...
US-9,613,779 Scanning transmission electron microscope with variable axis objective lens and detective system
The present invention provides a scanning transmission electron microscope (STEM). In the STEM, a specimen is sandwiched between a variable axis objective lens...
US-9,613,778 Connector for process chamber electrostatic elements
Provided herein are approaches for securing electrostatic elements within a lens component. In one approach, a connector includes a flexible coupling secured at...
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