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Patent # Description
US-9,620,626 Method for fabricating a semiconductor device including fin relaxation, and related structures
Methods of fabricating semiconductor structures involve the formation of fins for finFET transistors having different stress/strain states. Fins of one...
US-9,620,623 Semiconductor device and manufacturing method thereof
When a semiconductor device including a transistor in which a gate electrode layer, a gate insulating film, and an oxide semiconductor film are stacked and a...
US-9,620,620 Methods to stop contact metal from extruding into replacement gates
A method of preventing contact metal from protruding into neighboring gate devices to affect work functions of the neighboring gate devices is provided includes...
US-9,620,618 Transistor and method for forming the same
A method for forming a transistor is provided. The method includes: forming a channel layer over a substrate; forming a barrier layer between the channel layer...
US-9,620,606 Method for manufacturing thin film transistor, and thin film transistor thereof
The present disclosure relates to the field of liquid crystal display, and provides a method for manufacturing a TFT and the TFT thereof. The TFT includes: a...
US-9,620,576 Organic light-emitting display device
Embodiments may disclose an organic light-emitting display device including a first substrate including a pixel area emitting light in a first direction, and a...
US-9,620,574 Organic light emitting diode display
An organic light emitting diode display includes a substrate, a semiconductor disposed on the substrate that includes a channel for each of a plurality of...
US-9,620,573 Semiconductor device including light-emitting element
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing...
US-9,620,562 Voltage-controlled magnetic anisotropy switching device using an external ferromagnetic biasing film
Aspects of the present disclose related to a voltage-controlled magnetic anisotropy (VCMA) switching device using an external ferromagnetic biasing film....
US-9,620,552 Solid-state imaging device and manufacturing method thereof
A solid-state imaging device includes a photoelectric conversion unit, a transistor, and an element separation region separating the photoelectric conversion...
US-9,620,537 Display substrate and fabricating method thereof, mask plate, and mask plate group
The present disclosure provides a display substrate and a mask plate, the display substrate comprising a plurality of sub display substrates, each of the sub...
US-9,620,512 Field effect transistor with a multilevel gate electrode for integration with a multilevel memory device
A switching field effect transistor and the memory devices can be formed employing a same set of processing steps. An alternating stack of insulating layers and...
US-9,620,501 Enhancement-depletion mode circuit element with differential passivation
An enhancement-depletion circuit element includes a depletion-mode load transistor and an enhancement-mode drive transistor formed from the common elements of:...
US-9,620,494 Hybrid substrates, semiconductor packages including the same and methods for fabricating semiconductor packages
Provided are a hybrid substrate, a semiconductor package including the same, and a method for fabricating the semiconductor package. The hybrid substrate may...
US-9,620,480 Integrated circuit packaging system with unplated leadframe and method of manufacture thereof
An integrated circuit packaging system and method of manufacture thereof including: providing an unplated leadframe having a contact protrusion; forming a...
US-9,620,468 Semiconductor packaging structure and method for forming the same
Various embodiments provide semiconductor packaging structures and methods for forming the same. In an exemplary method, a chip having a metal interconnect...
US-9,620,465 Dual-sided integrated fan-out package
A method for forming through vias comprises the steps of forming a dielectric layer over a package and forming an RDL over the dielectric layer, wherein forming...
US-9,620,464 Wireless communications package with integrated antennas and air cavity
Antenna package structures are provided to implement wireless communications packages. For example, an antenna package includes a package carrier and a package...
US-9,620,453 Semiconductor structure including a layer of a first metal between a diffusion barrier layer and a second metal...
A method includes providing a semiconductor structure including a recess. The recess includes at least one of a contact via and a trench. A layer of a first...
US-9,620,443 Semiconductor component and method of manufacture
In accordance with an embodiment, a semiconductor component includes a support having a first device receiving structure, a second device receiving structure, a...
US-9,620,442 Semiconductor device
A semiconductor device includes a package part having a semiconductor element sealed in resin, a plurality of first leads each having an outer portion extending...
US-9,620,420 Semiconductor arrangement and formation thereof
A semiconductor arrangement and method of formation are provided. The semiconductor arrangement includes a metal connect over and connected to a first active...
US-9,620,403 Adhesive sheet used in manufacture of semiconductor device, adhesive sheet integrated with dicing tape,...
The present invention provides an adhesive sheet used in manufacture of a semiconductor device, containing a filler having an average particle size of 0.3 .mu.m...
US-9,620,400 Position sensitive substrate device
Some aspects of the present disclosure relate to a system having a substrate device, a substrate support surface, and a substrate handler that positions the...
US-9,620,397 Automated material handling system for semiconductor manufacturing based on a combination of vertical carousels...
A highly efficient Automated Material Handling System (AMHS) that allows an overhead hoist transport vehicle to load and unload Work-In-Process (WIP) parts...
US-9,620,378 Composition for film formation, film, production method of patterned substrate, and compound
A composition comprises: a compound having one partial structure represented by formula (1), and a solvent. n1 and n2 are each independently an integer of 0 to...
US-9,620,377 Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
Various embodiments herein relate to methods, apparatus and systems for forming a recessed feature in a dielectric-containing stack on a semiconductor...
US-9,620,370 Method of forming Ti film
A method of forming a Ti film on a substrate disposed in a chamber by introducing a processing gas containing a TiCl.sub.4 gas as a Ti source and a H.sub.2 gas...
US-9,620,363 Underlayer film-forming composition and pattern forming process
In lithography, a composition comprising a novolak resin comprising recurring units of hydroxycoumarin is used to form a photoresist underlayer film. The...
US-9,620,362 Seed layer structure for growth of III-V materials on silicon
The present disclosure relates to a structure and method of forming a GaN film on a Si substrate that includes an additional or second high temperature (HT) AlN...
US-9,620,360 Fabrication of semiconductor junctions
A method comprises providing a cavity structure on the substrate comprising a first growth channel extending in a first direction, a second growth channel...
US-9,620,359 Reactive depletion of reactor deposits in harvesting polycrystalline silicon rods
The Siemens process for deposition of polycrystalline silicon in the form of rods in a sealed reactor is improved by, after introduction of deposition gas has...
US-9,620,358 Method for manufacturing silicon carbide semiconductor device
A method for manufacturing a silicon carbide semiconductor device includes the following steps. There is prepared a first silicon carbide layer having a first...
US-9,620,357 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
A method of manufacturing a semiconductor device includes: providing a substrate having an oxide film; performing, a predetermined number of times, a cycle of...
US-9,620,356 Process of selective epitaxial growth for void free gap fill
Methods and apparatuses for filling an epitaxial layer into a trench/via/structure formed in a substrate with good deposition profile control and film...
US-9,620,355 Wafer processing method
A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a...
US-9,620,354 Method for manufacturing semiconductor substrate with diffusion agent composition
A method for manufacturing a semiconductor substrate. An impurity diffusion ingredient can be diffused well and uniformly from a coating film into a...
US-9,620,353 Method of manufacturing semiconductor device
A method of manufacturing a semiconductor device including attaching, by a liquid treatment, a first liquid to a surface of a semiconductor substrate having a...
US-9,620,352 Electrodeless lighting device and method for manufacturing the same
An electrodeless lighting device and methods for manufacturing the same are provided. The method includes inserting a dose into the bulb and at least one of...
US-9,620,351 Microscale mass spectrometry systems, devices and related methods
Mass spectrometry systems or assemblies therefore include an ionizer that includes at least one planar conductor, a mass analyzer with a planar electrode...
US-9,620,350 Multireflection time-of-flight mass spectrometer
A method of reflecting ions in a multireflection time of flight mass spectrometer is disclosed. The method includes guiding ions toward an ion mirror having...
US-9,620,349 ICR cell operating with a duplexer
An ICR cell (01) operates with a duplexer (08), which is an integral part of a transmission and receiving device (09) of an FT-ICR mass spectrometry device. The...
US-9,620,348 Integrated electrospray ionization emitter and detection cell for parallel measurements by fluorescence and...
An integrated mass spectrometer electrospray emitter and fluorescence detector allows improved volumetric measurements of separate components from a liquid...
US-9,620,347 Ion guide device and ion guide method
The present invention relates to an ion guide device and an ion guiding method. The ion guide device comprises: a plurality of electrode sets distributed along...
US-9,620,346 Mass spectrometer
A mass spectrometer is disclosed comprising an ion guide. The ion guide comprises a hollow tubular conductor having a wall. One or more electrodes are provided...
US-9,620,344 Mass spectrometry analysis of microorganisms in samples
The invention generally relates to systems and methods for mass spectrometry analysis of microorganisms in samples.
US-9,620,343 Balanced sample introduction system
A system includes a first aerosolization device (e.g., a nebulizer and a spray chamber/desolvation device in fluid communication with the nebulizer) configured...
US-9,620,342 Interlacing to improve sampling of data when ramping parameters
Systems and methods are provided for interlacing ramped mass spectrometer parameter values during data acquisition. Ions from a sample are acquired within a...
US-9,620,341 Photomultiplier tube, image sensor, and an inspection system using a PMT or image sensor
A system for inspecting a sample including a detector, either a photomultiplier tube or an electron-bombarded image sensor, that is positioned to receive light...
US-9,620,339 Sputter source for semiconductor process chambers
Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process...
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